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Two-dimensional ion trap lattice on a microchip
Authors:
R. C. Sterling,
H. Rattanasonti,
S. Weidt,
K. Lake,
P. Srinivasan,
S. C. Webster,
M. Kraft,
W. K. Hensinger
Abstract:
Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have l…
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Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, due to the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a 2D ion trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of 2D ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.
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Submitted 25 April, 2014; v1 submitted 15 February, 2013;
originally announced February 2013.
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Increased surface flashover voltage in microfabricated devices
Authors:
R. C. Sterling,
M. D. Hughes,
C. J. Mellor,
W. K. Hensinger
Abstract:
With the demand for improved performance in microfabricated devices, the necessity to apply greater electric fields and voltages becomes evident. When operating in vacuum, the voltage is typically limited by surface flashover forming along the surface of a dielectric. By modifying the fabrication process we have discovered it is possible to more than double the flashover voltage. Our finding has s…
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With the demand for improved performance in microfabricated devices, the necessity to apply greater electric fields and voltages becomes evident. When operating in vacuum, the voltage is typically limited by surface flashover forming along the surface of a dielectric. By modifying the fabrication process we have discovered it is possible to more than double the flashover voltage. Our finding has significant impact on the realization of next-generation micro- and nano-fabricated devices and for the fabrication of on-chip ion trap arrays for the realization of scalable ion quantum technology.
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Submitted 25 April, 2014; v1 submitted 28 August, 2012;
originally announced August 2012.
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Versatile ytterbium ion trap experiment for operation of scalable ion trap chips with motional heating and transition frequency measurements
Authors:
James J. McLoughlin,
Altaf H. Nizamani,
James D. Siverns,
Robin C. Sterling,
Marcus D. Hughes,
Bjoern Lekitsch,
Björn Stein,
Seb Weidt,
Winfried K. Hensinger
Abstract:
We present the design and operation of an ytterbium ion trap experiment with a setup offering versatile optical access and 90 electrical inter-connects that can host advanced surface and multi-layer ion trap chips mounted on chip carriers. We operate a macroscopic ion trap compatible with this chip carrier design and characterise its performance, demonstrating secular frequencies >1 MHz, and trap…
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We present the design and operation of an ytterbium ion trap experiment with a setup offering versatile optical access and 90 electrical inter-connects that can host advanced surface and multi-layer ion trap chips mounted on chip carriers. We operate a macroscopic ion trap compatible with this chip carrier design and characterise its performance, demonstrating secular frequencies >1 MHz, and trap and cool nearly all of the stable isotopes, including 171Yb+ ions, as well as ion crystals. For this particular tap we measure the motional heating rate, <n-dot>, and observe a <n-dot> proportional to 1/omega^2 behaviour for different secular frequencies, omega. We also determine a spectral noise density S_E(1 MHz) = 3.6(9)x10^-11 V^2 m^-2 Hz^-1 at an ion electrode spacing of 310(10) mu m. We describe the experimental setup for trapping and cooling Yb+ ions and provide frequency measurements of the 2S_1/2 - 2P_1/2 and 2D_3/2 - 3D[3/2]_1/2 transitions for the stable 170Yb+, 171Yb+, 172Yb+, 174Yb+ and 176Yb+ isotopes which are more precise than previously published work.
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Submitted 17 December, 2010; v1 submitted 22 July, 2010;
originally announced July 2010.
