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Anomalous properties of spark plasma sintered boron nitride solids
Authors:
Abhijit Biswas,
Peter Serles,
Gustavo A. Alvarez,
Jesse Schimpf,
Michel Hache,
Jonathan Kong,
Pedro Guerra Demingos,
Bo Yuan,
Tymofii S. Pieshkov,
Chenxi Li,
Anand B. Puthirath,
Bin Gao,
Tia Gray,
Xiang Zhang,
Jishnu Murukeshan,
Robert Vajtai,
Pengcheng Dai,
Chandra Veer Singh,
Jane Howe,
Yu Zou,
Lane W. Martin,
James Patrick Clancy,
Zhiting Tian,
Tobin Filleter,
Pulickel M. Ajayan
Abstract:
Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasma sintering (SPS) of micron size h-BN powders. In addition to the high mechanical strength and ductile response of such materials, we have obtained an…
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Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasma sintering (SPS) of micron size h-BN powders. In addition to the high mechanical strength and ductile response of such materials, we have obtained anomalous values of dielectric constant beyond theoretical limits, high thermal conductivity, and exceptional neutron radiation shielding capability. Through exhaustive characterizations we reveal that SPS induces non-basal plane crystallinity, twisting of layers, and facilitates inter-grain fusion with a high degree of in-plane alignment across macroscale dimensions, resulting in near-theoretical density and anomalous properties. Our findings highlight the importance of material design, via new approaches such as twisting and interconnections between atomically thin layers, to create novel ceramics with properties that could go beyond their intrinsic theoretical predictions.
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Submitted 10 July, 2024; v1 submitted 9 May, 2024;
originally announced May 2024.
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VO2 Phase Change Electrodes in Li-ion Batteries
Authors:
Samuel Castro-Pardo,
Anand B. Puthirath,
Shaoxun Fan,
Sreehari Saju,
Guang Yang,
Jagjit Nanda,
Robert Vajtai,
Ming Tang,
Pulickel M. Ajayan
Abstract:
Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-insulator transition due to first-order structural phase transition at accessible temperature of 68°C for battery operation. Using a suitable electrol…
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Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-insulator transition due to first-order structural phase transition at accessible temperature of 68°C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of electrode structure change on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. This opens up new avenues for electrode designs, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to existing classes of battery chemistries that lead to performance deterioration at elevated temperatures.
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Submitted 30 May, 2023;
originally announced May 2023.
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Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition
Authors:
Lucas M. Sassi,
Sathvik Ajay Iyengar,
Anand B. Puthirath,
Yuefei Huang,
Xingfu Li,
Tanguy Terlier,
Ali Mojibpour,
Ana Paula C. Teixeira,
Palash Bharadwaj,
Chandra Sekhar Tiwary,
Robert Vajtai,
Saikat Talapatra,
Boris Yakobson,
Pulickel M. Ajayan
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for c…
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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for crystal growth. Additionally, deleterious and time-consuming transfer processes and multiple steps involved in channel/contact engineering can cripple device performance. This work demonstrates kinetics-governed in-situ growth regimes (surface or edge growth from gold) of WSe2 and provides a mechanistic understanding of these regimes via energetics across various material interfaces. As a proof-of-concept, field effect transistors (FET) with an in-situ grown WSe2 channel across Au contacts are fabricated, demonstrating a 2D semiconductor transistor via a transfer-free method within the 450-600 C 2h-time window requirement BEOL integration. We leverage directional edge growth to fabricate contacts with robust thickness-dependent Schottky-to-Ohmic behavior. By transitioning between Au and SiO2 growth substrates in situ, this work achieves strain-induced subthreshold swing of 140 mV/decade, relatively high mobility of 107 +- 19 cm2V-1s-1, and robust ON/OFF ratios 10^6 in the fabricated FETs.
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Submitted 23 May, 2023;
originally announced May 2023.
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Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
Authors:
Abhijit Biswas,
Gustavo A. Alvarez,
Tao Li,
Joyce Christiansen-Salameh,
Eugene Jeong,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Tia Gray,
Xiang Zhang,
Tymofii S. Pieshkov,
Harikishan Kannan,
Jacob Elkins,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Elias J. Garratt,
Bradford B. Pate,
Tony G. Ivanov,
Yuji Zhao,
Zhiting Tian,
Pulickel M. Ajayan
Abstract:
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition a…
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Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures.
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Submitted 20 September, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
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Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Authors:
Abhijit Biswas,
Rui Xu,
Gustavo A. Alvarez,
Jin Zhang,
Joyce Christiansen-Salameh,
Anand B. Puthirath,
Kory Burns,
Jordan A. Hachtel,
Tao Li,
Sathvik Ajay Iyengar,
Tia Gray,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Jacob Elkins,
Tymofii S. Pieshkov,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Elias J. Garratt,
Tony Ivanov,
Bradford B. Pate,
Yuji Zhao,
Hanyu Zhu,
Zhiting Tian
, et al. (2 additional authors not shown)
Abstract:
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and s…
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Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.
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Submitted 4 November, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites
Authors:
Abhijit Biswas,
Rui Xu,
Joyce Christiansen-Salameh,
Eugene Jeong,
Gustavo A. Alvarez,
Chenxi Li,
Anand B. Puthirath,
Bin Gao,
Arushi Garg,
Tia Gray,
Harikishan Kannan,
Xiang Zhang,
Jacob Elkins,
Tymofii S. Pieshkov,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Bradford B. Pate,
Tony Ivanov,
Elias J. Garratt,
Pengcheng Dai,
Hanyu Zhu,
Zhiting Tian,
Pulickel M. Ajayan
Abstract:
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show…
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Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal energy management applications.
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Submitted 17 April, 2023;
originally announced April 2023.
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Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Authors:
Abhijit Biswas,
Mingfei Xu,
Kai Fu,
Jingan Zhou,
Rui Xu,
Anand B. Puthirath,
Jordan A. Hachtel,
Chenxi Li,
Sathvik Ajay Iyengar,
Harikishan Kannan,
Xiang Zhang,
Tia Gray,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Dmitry A. Ruzmetov,
Pankaj B. Shah,
Tony Ivanov,
Hanyu Zhu,
Yuji Zhao,
Pulickel M. Ajayan
Abstract:
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the gr…
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Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
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Submitted 1 September, 2022;
originally announced September 2022.
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Unidirectional domain growth of hexagonal boron nitride thin films
Authors:
Abhijit Biswas,
Qiyuan Ruan,
Frank Lee,
Chenxi Li,
Sathvik Ajay Iyengar,
Anand B. Puthirath,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Manoj Tripathi,
Alan Dalton,
Boris I. Yakobson,
Pulickel M. Ajayan
Abstract:
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates rem…
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Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.
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Submitted 26 January, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Authors:
Abhijit Biswas,
Rishi Maiti,
Frank Lee,
Cecilia Y. Chen,
Tao Li,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
Md Abid Shahriar Rahman Saadi,
Jacob Elkins,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Yuji Zhao,
Alexander L. Gaeta,
Manoj Tripathi,
Alan Dalton,
Pulickel M. Ajayan
Abstract:
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff…
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Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget.
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Submitted 12 October, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces
Authors:
Eliezer Oliveira,
Chenxi Li,
Xiang Zhang,
Anand Puthirath,
Mahesh R. Neupane,
James Weil,
A. Glen Birdwell,
Tony Ivanov,
Seoyun Kong,
Tia Grey,
Harikishan Kannan,
Robert Vajtai,
Douglas Galvao,
Pulickel Ajayan
Abstract:
The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment…
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The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment and the diamond surface quality. To investigate the stability of the oxygenated groups at specific diamond surfaces, we evaluated through fully atomistic reactive molecular mechanics (FARMM) simulations, using the ReaxFF force field, the formation energies of CO, COC, and COH groups on pristine and defective diamond surfaces (110), (111), and (311). According to our findings, the COH group has the lowest formation energy on a perfect (110) surface, while the COC is favored on a defective surface. As for the (111) surface, the COC group is the most stable for both pristine and defective surfaces. Similarly, COC group is also the most stable one on the defective/perfect (311) surface. In this way, our results suggest that if in a diamond film the (110) surface is the major exposed facet, the most adsorbed oxygen group could be either COH or COC, in which the COC would depend on the level of surface defects.
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Submitted 24 January, 2022;
originally announced January 2022.
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A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces
Authors:
Eliezer F. Oliveira,
Mahesh R. Neupane,
Chenxi Li,
Harikishan Kannan,
Xiang Zhang,
Anand B. Puthirath,
Pankaj B. Shah,
A. Glen Birdwell,
Tony G. Ivanov,
Robert Vajtai,
Douglas S. Galvao,
Pulickel M. Ajayan
Abstract:
Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond s…
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Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications.
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Submitted 25 May, 2021;
originally announced May 2021.
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Three-dimensional Printing of Complex Graphite Structures
Authors:
Seyed Mohammad Sajadi,
Shayan Enayat,
Lívia Vásárhelyi,
Alessandro Alabastri,
Minghe Lou,
Lucas M. Sassi,
Alex Kutana,
Sanjit Bhowmick,
Christian Durante,
Ákos Kukovecz,
Anand B. Puthirath,
Zoltán Kónya,
Robert Vajtai,
Peter Boul,
Chandra Shekhar Tiwary,
Muhammad M. Rahman,
Pulickel M. Ajayan
Abstract:
Graphite, with many industrial applications, is one of the widely sought-after allotropes of carbon. The sp2 hybridized and thermodynamically stable form of carbon forms a layered structure with strong in-plane carbon bonds and weak inter-layer van der Waals bonding. Graphite is also a high-temperature ceramic, and shaping them into complex geometries is challenging, given its limited sintering be…
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Graphite, with many industrial applications, is one of the widely sought-after allotropes of carbon. The sp2 hybridized and thermodynamically stable form of carbon forms a layered structure with strong in-plane carbon bonds and weak inter-layer van der Waals bonding. Graphite is also a high-temperature ceramic, and shaping them into complex geometries is challenging, given its limited sintering behavior even at high temperatures. Although the geometric design of the graphite structure in many of the applications could dictate its precision performance, conventional synthesis methods for formulating complex geometric graphite shapes are limited due to the intrinsic brittleness and difficulties of high-temperature processing. Here, we report the development of colloidal graphite ink from commercial graphite powders with reproducible rheological behavior that allows the fabrication of any complex architectures with tunable geometry and directionality via 3D printing at room temperature. The method is enabled via using small amounts of clay, another layered material, as an additive, allowing the proper design of the graphene ink and subsequent binding of graphite platelets during printing. Sheared layers of clay are easily able to flow, adapt, and interface with graphite layers forming strong binding between the layers and between particles that make the larger structures. The direct ink printing of complex 3D architectures of graphite without further heat treatments could lead to easy shape engineering and related applications of graphite at various length scales, including complex graphite molds or crucibles. The 3D printed complex graphitic structures exhibit excellent thermal, electrical, and mechanical properties, and the clay additive does not seem to alter these properties due to the excellent inter-layer dispersion and mixing within the graphite material.
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Submitted 2 December, 2020;
originally announced December 2020.
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Apparent Ferromagnetism in Exfoliated Ultra-thin Pyrite Sheets
Authors:
Anand B. Puthirath,
Aravind Puthirath Balan,
Eliezer F. Oliveira,
Vishnu Sreepal,
Francisco C. Robles Hernandez,
Guanhui Gao,
Nithya Chakingal,
Lucas M. Sassi,
Prasankumar Thibeorchews,
Gelu Costin,
Robert Vajtai,
Douglas S. Galvao,
Rahul R. Nair,
Pulickel M. Ajayan
Abstract:
Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (…
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Experimental evidence for ferromagnetic ordering in isotropic atomically thin two-dimensional crystals has been missing until a bilayer Cr2Ge2Te6, and a three-atom thick monolayer CrI3 are shown to retain ferromagnetic ordering at finite temperatures. Here, we demonstrate successful isolation of a non-van der Waals type ultra-thin nanosheet of FeS2 derived from naturally occurring pyrite mineral (FeS2) by means of liquid-phase exfoliation. Structural characterizations imply that (111) oriented sheets are predominant and is supported theoretically by means of density functional theory surface energy calculations. Spin-polarized density theory calculations further predicted that (111) oriented three-atom thick pyrite sheet has a stable ferromagnetic ground state different from its diamagnetic bulk counterpart. This theoretical finding is evaluated experimentally employing low temperature superconducting quantum interference device measurements and observed an anomalous ferromagnetic kind of behavior.
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Submitted 28 August, 2021; v1 submitted 6 October, 2020;
originally announced October 2020.
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Mechanical Properties of Ultralow Density Graphene Oxide/Polydimethylsiloxane Foams
Authors:
Cristiano F. Woellner,
Peter S. Owuor,
Tong Li,
Soumya Vinod,
Sehmus Ozden,
Suppanat Kosolwattana,
Sanjit Bhowmick,
Luong X. Duy,
Rodrigo V. Salvatierra,
Bingqing Wei,
Syed A. S. Asif,
James M. Tour,
Robert Vajtai,
Jun Lou,
Douglas S. Galvao,
Chandra S. Tiwary,
Pulickel. M. Ajayan
Abstract:
Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical prop…
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Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical properties are mainly attributed to the intrinsic graphene and/or GO electronic and mechanical properties. Despite the attractive physical properties of graphene/GO based-foams, their structural and thermal stabilities are still a problem for some applications. For instance, they are easily degraded when placed in flowing solutions, either by the collapsing of their layers or just by structural disintegration into small pieces. Recently, a new and scalable synthetic approach to produce low-density 3D macroscopic GO structure interconnected with polydimethylsiloxane (PDMS) polymeric chains (pGO) was proposed. A controlled amount of PDMS is infused into the freeze-dried foam resulting into a very rigid structure with improved mechanical properties, such as tensile plasticity and toughness. The PDMS wets the graphene oxide sheets and acts like a glue bonding PDMS and GO sheets. In order to obtain further insights on mechanisms behind the enhanced mechanical pGO response we carried out fully atomistic molecular dynamics (MD) simulations. Based on MD results, we build up a structural model that can explain the experimentally observed mechanical behavior.
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Submitted 18 January, 2018;
originally announced January 2018.
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Quaternary two-dimensional (2D) transition metal dichalcogenides (TMDs) with tunable bandgap
Authors:
Sandhya Susarla,
Alex Kutana,
Jordan A. Hachtel,
Vidya Kochat,
Amey Apte,
Robert Vajtai,
Juan Carlos Idrobo,
Boris I. Yakobson,
Chandra Sekhar Tiwary,
Pulickel M Ajayan
Abstract:
Alloying/doping in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys…
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Alloying/doping in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys has been tuned by changing the growth temperatures. As a result, we can tune the bandgap which varies from 1.73 eV to 1.84 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
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Submitted 2 May, 2017;
originally announced May 2017.
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Atomically thin gallium layers from solid-melt exfoliation
Authors:
V. Kochat,
A. Samanta,
Y. Zhang,
S. Bhowmick,
P. Manimunda,
S. A. S. Asif,
A. Stender,
Robert Vajtai,
A. K. Singh,
C. S. Tiwary,
P. M. Ajayan
Abstract:
Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface bet…
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Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the non-linear dispersive band near Fermi level suggesting that gallenene should behave as a metallic layer. Furthermore it is observed that strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter paving the way for using gallenene as interesting metallic contacts in 2D devices.
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Submitted 26 April, 2017;
originally announced April 2017.
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Self-optimizing layered hydrogen evolution catalyst with high basal-plane activity
Authors:
Yuanyue Liu,
Jingjie Wu,
Ken P. Hackenberg,
Jing Zhang,
Y. Morris Wang,
Yingchao Yang,
Kunttal Keyshar,
Jing Gu,
Tadashi Ogitsu,
Robert Vajtai,
Jun Lou,
Pulickel M. Ajayan,
Brandon C. Wood,
Boris I. Yakobson
Abstract:
Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or…
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Hydrogen is a promising energy carrier and key agent for many industrial chemical processes1. One method for generating hydrogen sustainably is via the hydrogen evolution reaction (HER), in which electrochemical reduction of protons is mediated by an appropriate catalyst-traditionally, an expensive platinum-group metal. Scalable production requires catalyst alternatives that can lower materials or processing costs while retaining the highest possible activity. Strategies have included dilute alloying of Pt2 or employing less expensive transition metal alloys, compounds or heterostructures (e.g., NiMo, metal phosphides, pyrite sulfides, encapsulated metal nanoparticles)3-5. Recently, low-cost, layered transition-metal dichalcogenides (MX2)6 based on molybdenum and tungsten have attracted substantial interest as alternative HER catalysts7-11. These materials have high intrinsic per-site HER activity; however, a significant challenge is the limited density of active sites, which are concentrated at the layer edges.8,10,11. Here we use theory to unravel electronic factors underlying catalytic activity on MX2 surfaces, and leverage the understanding to report group-5 MX2 (H-TaS2 and H-NbS2) electrocatalysts whose performance instead derives from highly active basal-plane sites. Beyond excellent catalytic activity, they are found to exhibit an unusual ability to optimize their morphology for enhanced charge transfer and accessibility of active sites as the HER proceeds. This leads to long cycle life and practical advantages for scalable processing. The resulting performance is comparable to Pt and exceeds all reported MX2 candidates.
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Submitted 19 August, 2016;
originally announced August 2016.
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Growth of carbon nanotubes on quasicrystalline alloys
Authors:
Deep Jariwala,
Kaushik Chandra,
Anyuan Cao,
Saikat Talapatra,
Mutshihiro Shima,
D. Anuhya,
V. S. S. S. Prasad,
R. Ribeiro,
P. C. Canfield,
D. Wu,
Anchal Srivastava,
R. K. Mandal,
A. K. Pramanick,
Robert Vajtai,
Pulickel. M. Ajayan,
G. V. S. Sastry
Abstract:
We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also bee…
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We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also been made between tubes grown on various quasicrystalline and SiO2 substrates. While a significant MWNT growth was observed on decagonal quasicrystalline substrate, there was no significant growth observed on icosahedral quasicrystalline substrate. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) results show high crystalline nature of the nanotubes. Presence of continuous iron filled core in the nanotubes grown on these substrates was also observed, which is typically not seen in MWNTs grown using similar process on silicon and/or silicon dioxide substrates. The study has important implications for understanding the growth mechanism of MWNTs on conducting substrates which have potential applications as heat sinks.
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Submitted 10 October, 2012;
originally announced October 2012.
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Spring-block approach for nanobristle patterns
Authors:
Ferenc Járai-Szabó,
Emőke-Ágnes Horvát,
Robert Vajtai,
Zoltán Néda
Abstract:
A two dimensional spring-block type model is used to model capillarity driven self-organization of nanobristles. The model reveals the role of capillarity and van der Waals forces in the pattern formation mechanism. By taking into account the relevant interactions several type of experimentally observed patterns are qualitatively well reproduced. The model offers the possibility to generate on com…
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A two dimensional spring-block type model is used to model capillarity driven self-organization of nanobristles. The model reveals the role of capillarity and van der Waals forces in the pattern formation mechanism. By taking into account the relevant interactions several type of experimentally observed patterns are qualitatively well reproduced. The model offers the possibility to generate on computer novel nanobristle based structures, offering hints for designing further experiments.
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Submitted 30 November, 2010;
originally announced December 2010.
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Fluctuation-Enhanced Sensing of Molecules with Biased Carbon Nanotubes, or Nanowires, and Adsorption-Desorption Fluctuations
Authors:
Laszlo B. Kish,
Robert Vajtai,
Pulickel Ajayan,
Chiman Kwan,
Gabor Schmera
Abstract:
A new nanoscale device for fluctuation-enhanced sensing is proposed.
A new nanoscale device for fluctuation-enhanced sensing is proposed.
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Submitted 13 March, 2007;
originally announced March 2007.
