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High-order minibands and interband Landau level reconstruction in graphene moire superlattice
Authors:
Xiaobo Lu,
Jian Tang,
John R. Wallbank,
Shuopei Wang,
Cheng Shen,
Shuang Wu,
Peng Chen,
Wei Yang,
Jing Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Dmitri K. Efetov,
Vladimir I. Falko,
Guangyu Zhang
Abstract:
The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of pa…
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The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moiré superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.
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Submitted 30 July, 2020;
originally announced July 2020.
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Authors:
M. T. Greenaway,
E. E. Vdovin,
D. Ghazaryan,
A. Misra,
A. Mishchenko,
Y. Cao,
Z. Wang,
J. R. Wallbank,
M. Holwill,
Yu. N. Khanin,
S. V. Morozov,
K. Watanabe,
T. Taniguchi,
O. Makarovsky,
T. M. Fromhold,
A. Patanè,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
L. Eaves
Abstract:
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical…
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Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
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Submitted 14 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering
Authors:
J. R. Wallbank,
R. Krishna Kumar,
M. Holwill,
Z. Wang,
G. H. Auton,
J. Birkbeck,
A. Mishchenko,
L. A. Ponomarenko,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
I. L. Aleiner,
A. K. Geim,
V. I. Fal'ko
Abstract:
Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates…
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Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increases with increasing the superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron-hole asymmetry with the effect being much stronger for holes rather than electrons. Aside from fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices.
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Submitted 16 August, 2018;
originally announced August 2018.
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Signatures of van Hove singularities probed by the supercurrent in a graphene - hBN superlattice
Authors:
D. I. Indolese,
R. Delagrange,
P. Makk,
J. R. Wallbank,
K. Wanatabe,
T. Taniguchi,
C. Schönenberger
Abstract:
The moiré superlattice induced in graphene by the hexagonal boron nitride substrate modifies strongly the bandstructure of graphene, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive regime, where that the sup…
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The moiré superlattice induced in graphene by the hexagonal boron nitride substrate modifies strongly the bandstructure of graphene, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive regime, where that the supercurrent depends on the Thouless energy. We can then estimate the specific density of states of the graphene superlattice from the combined measurement of the critical current and the normal state resistance. The result matches with theoretical predictions and highlights the strong increase of the density of states at the van Hove singularities. By measuring the magnetic field dependence of the supercurrent, we find the presence of edge currents at these singularities. We explain it by the reduction of the Fermi velocity associated with the flat band at the van Hove singularity, which suppresses the supercurrent in the bulk while the electrons at the edge remain less localized, resulting in an edge supercurrent. We attribute this different behavior of the edges to defects or chemical doping.
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Submitted 28 May, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
Authors:
T. L. M. Lane,
M. Anđelković,
J. R. Wallbank,
L. Covaci,
F. M. Peeters,
V. I. Fal'ko
Abstract:
We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer asymmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarised evanescent states propagating along the delamination edges (which persist in the presence of a strong magnetic field)…
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We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer asymmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarised evanescent states propagating along the delamination edges (which persist in the presence of a strong magnetic field) and standing waves bouncing between them inside the delaminated region (in a strong magnetic field, these transform into Landau levels in the monolayers). For inverted stacking between BLGs on the left and right of the delamination (AB-2ML-BA or BA-2ML-AB), the lowest energy ballistic channels are gapless, have linear dispersion and appear to be weakly topologically protected. When BLG stacking order on both sides of the delamination is the same (AB-2ML-AB or BA-2ML-BA), the lowest energy ballistic channels are gapped, with gap $\varepsilon_g$ scaling as $\varepsilon_g\propto W^{-1}$ with delamination width and as $\varepsilon_g\proptoδ^{-1}$ with the on-layer energy difference within the delamination. Depending on their width, delaminations may also support several `higher energy' waveguide modes. Our results are based on both an analytical study of the wavematching of Dirac states and tight binding model calculations, and we analyse in detail the dependence of the delamination spectrum on electrostatic conditions in the structure, such as the vertical displacement field.
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Submitted 10 January, 2018;
originally announced January 2018.
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Gate induced monolayer behavior in twisted bilayer black phosphorus
Authors:
Cem Sevik,
John R. Wallbank,
Oguz Gulseren,
Francois M. Peeters,
Deniz Cakır
Abstract:
Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model whic…
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Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model which is able to capture most of the low energy features and is valid for arbitrary twist angles. The electronic spectrum of 90$^\circ$ twisted bilayer black phosphorus is found to be x-y isotropic in contrast to the monolayer. However x-y anisotropy, and a partial return to monolayer-like behavior, particularly in the valence band, can be induced by an external out-of-plane electric field. Moreover, the preferred hole effective mass can be rotated by 90$^\circ$ simply by changing the direction of the applied electric field. In particular, a +0.4 (-0.4) V/Å out-of-plane electric field results in a $\sim$60\% increase in the hole effective mass along the y (x) axis and enhances the $m^*_{y}/m^*_{x}$ ($m^*_{x}/m^*_{y}$) ratio as much as by a factor of 40. Our DFT and $\vec{k}\cdot\vec{p}$ simulations clearly indicate that the twist angle in combination with an appropriate gate voltage is a novel way to tune the electronic and optical properties of bilayer phosphorus and it gives us a new degree of freedom to engineer the properties of black phosphorus based devices.
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Submitted 6 September, 2017;
originally announced September 2017.
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Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
Authors:
J. R. Wallbank,
D. Ghazaryan,
A. Misra,
Y. Cao,
J. S. Tu,
B. A. Piot,
M. Potemski,
S. Pezzini,
S. Wiedmann,
U. Zeitler,
T. L. M. Lane,
S. V. Morozov,
M. T. Greenaway,
L. Eaves,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
A. Mishchenko
Abstract:
Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly…
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Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.
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Submitted 8 August, 2016;
originally announced August 2016.
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Zero-energy modes and valley asymmetry in the Hofstadter spectrum of bilayer graphene van der Waals heterostructures with hBN
Authors:
Xi Chen,
J. R. Wallbank,
M. Mucha-Kruczynski,
E. McCann,
V. I. Fal'ko
Abstract:
We investigate the magnetic minibands of a heterostructure consisting of bilayer graphene (BLG) and hexagonal boron nitride (hBN) by numerically diagonalizing a two-band Hamiltonian that describes electrons in BLG in the presence of a moire potential. Due to inversion-symmetry breaking characteristic for the moire potential, the valley symmetry of the spectrum is broken, but despite this, the zero…
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We investigate the magnetic minibands of a heterostructure consisting of bilayer graphene (BLG) and hexagonal boron nitride (hBN) by numerically diagonalizing a two-band Hamiltonian that describes electrons in BLG in the presence of a moire potential. Due to inversion-symmetry breaking characteristic for the moire potential, the valley symmetry of the spectrum is broken, but despite this, the zero-energy Landau level in BLG survives, albeit with reduced degeneracy. In addition, we derive effective models for the low-energy features in the magnetic minibands and demonstrate the appearance of secondary Dirac points in the valence band, which we confirm by numerical simulations. Then, we analyze how single-particle gaps in the fractal energy spectrum produce a sequence of incompressible states observable under a variation of carrier density and magnetic field.
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Submitted 7 March, 2016;
originally announced March 2016.
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Ballistic miniband conduction in a graphene superlattice
Authors:
Menyoung Lee,
John R. Wallbank,
Patrick Gallagher,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir I. Fal'ko,
David Goldhaber-Gordon
Abstract:
Rational design of artificial lattices yields effects unavailable in simple solids, and vertical superlattices of multilayer semiconductors are already used in optical sensors and emitters. Manufacturing lateral superlattices remains a much bigger challenge, with new opportunities offered by the use of moire patterns in van der Waals heterostructures of graphene and hexagonal crystals such as boro…
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Rational design of artificial lattices yields effects unavailable in simple solids, and vertical superlattices of multilayer semiconductors are already used in optical sensors and emitters. Manufacturing lateral superlattices remains a much bigger challenge, with new opportunities offered by the use of moire patterns in van der Waals heterostructures of graphene and hexagonal crystals such as boron nitride (h-BN). Experiments to date have elucidated the novel electronic structure of highly aligned graphene/h-BN heterostructures, where miniband edges and saddle points in the electronic dispersion can be reached by electrostatic gating. Here we investigate the dynamics of electrons in moire minibands by transverse electron focusing, a measurement of ballistic transport between adjacent local contacts in a magnetic field. At low temperatures, we observe caustics of skipping orbits extending over hundreds of superlattice periods, reversals of the cyclotron revolution for successive minibands, and breakdown of cyclotron motion near van Hove singularities. At high temperatures, we study the suppression of electron focusing by inelastic scattering.
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Submitted 3 March, 2016;
originally announced March 2016.
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Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene
Authors:
Thomas L M Lane,
John R Wallbank,
Vladimir I Fal'ko
Abstract:
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence…
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We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.
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Submitted 9 December, 2015;
originally announced December 2015.
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Moire miniband features in the angle-resolved photoemission spectra of graphene/hBN heterostructures
Authors:
M. Mucha-Kruczynski,
J. R. Wallbank,
V. I. Fal'ko
Abstract:
We identify features in the angle-resolved photoemission spectra (ARPES) arising from the periodic pattern characteristic for graphene heterostructure with hexagonal boron nitride (hBN). For this, we model ARPES spectra and intensity maps for five microscopic models used previously to describe moire superlattice in graphene/hBN systems. We show that detailed analysis of these features can be used…
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We identify features in the angle-resolved photoemission spectra (ARPES) arising from the periodic pattern characteristic for graphene heterostructure with hexagonal boron nitride (hBN). For this, we model ARPES spectra and intensity maps for five microscopic models used previously to describe moire superlattice in graphene/hBN systems. We show that detailed analysis of these features can be used to pin down the microscopic mechanism of the interaction between graphene and hBN. We also analyze how the presence of a moire-periodic strain in graphene or scattering of photoemitted electrons off hBN can be distinguished from the miniband formation.
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Submitted 10 February, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
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Resonant tunnelling between the chiral Landau states of twisted graphene lattices
Authors:
M. T. Greenaway,
E. E. Vdovin,
A. Mishchenko,
O. Makarovsky,
A. Patanè,
J. R. Wallbank,
Y. Cao,
A. V. Kretinin,
M. J. Zhu,
S. V. Morozov,
V. I. Fal'ko,
K. S. Novoselov,
A. K. Geim,
T. M. Fromhold,
L. Eaves
Abstract:
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers t…
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A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.
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Submitted 21 October, 2015; v1 submitted 21 September, 2015;
originally announced September 2015.
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Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures
Authors:
J. R. Wallbank,
M. Mucha-Kruczynski,
Xi Chen,
V. I. Fal'ko
Abstract:
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moiré superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly.
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moiré superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly.
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Submitted 5 November, 2014;
originally announced November 2014.
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Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
Authors:
A. Mishchenko,
J. S. Tu,
Y. Cao,
R. V. Gorbachev,
J. R. Wallbank,
M. T. Greenaway,
V. E. Morozov,
S. V. Morozov,
M. J. Zhu,
S. L. Wong,
F. Withers,
C. R. Woods,
Y. -J. Kim,
K. Watanabe,
T. Taniguchi,
E. E. Vdovin,
O. Makarovsky,
T. M. Fromhold,
V. I. Falko,
A. K. Geim,
L. Eaves,
K. S. Novoselov
Abstract:
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic…
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Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.
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Submitted 8 September, 2014;
originally announced September 2014.
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Moire pattern as a magnifying glass for strain and dislocations in van der Waals heterostructures
Authors:
Diana A. Cosma,
John R. Wallbank,
Vadim Cheianov,
Vladimir I. Fal'ko
Abstract:
We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moire patterns characteristic for a pair of two incommensurate misaligned isostructural crystals. By, employing a phenomenological theory to describe generic moire perturbation in van der Waals heterostructures of graphene and hexa…
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We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moire patterns characteristic for a pair of two incommensurate misaligned isostructural crystals. By, employing a phenomenological theory to describe generic moire perturbation in van der Waals heterostructures of graphene and hexagonal crystals we investigate the electronic properties of such heterostructure.
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Submitted 7 August, 2014;
originally announced August 2014.
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Silicane and germanane: tight-binding and first-principles studies
Authors:
V. Zólyomi,
J. R. Wallbank,
V. I. Fal'ko
Abstract:
We present a first-principles and tight-binding model study of silicane and germanane, the hydrogenated derivatives of two-dimensional silicene and germanene. We find that the materials are stable in freestanding form, analyse the orbital composition, and derive a tight-binding model using first-principles calculations to fit the parameters.
We present a first-principles and tight-binding model study of silicane and germanane, the hydrogenated derivatives of two-dimensional silicene and germanene. We find that the materials are stable in freestanding form, analyse the orbital composition, and derive a tight-binding model using first-principles calculations to fit the parameters.
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Submitted 15 April, 2014; v1 submitted 10 January, 2014;
originally announced January 2014.
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Dirac edges of fractal magnetic minibands in graphene with hexagonal moire superlattices
Authors:
Xi Chen,
J. R. Wallbank,
A. A. Patel,
M. Mucha-Kruczynski,
E. McCann,
V. I. Fal'ko
Abstract:
We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pφ_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectru…
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We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pφ_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectrum, and show that these minibands have topological insulator properties. Using the additional $q$-fold degeneracy of magnetic minibands at B_{p/q}, we trace the hierarchy of the gaps to their manifestation in the form of incompressible states upon variation of the carrier density and magnetic field.
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Submitted 13 January, 2014; v1 submitted 31 October, 2013;
originally announced October 2013.
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Infrared absorption by graphene-hBN heterostructures
Authors:
D. S. L. Abergel,
J. R. Wallbank,
Xi Chen,
M. Mucha-Kruczyński,
Vladimir I. Fal'ko
Abstract:
We propose a theory of optical absorption in monolayer graphene-hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moiré superlattice potential for the graphene electrons which modifies the selection rules for absorption of incoming photons in the infrared to visible frequency range. The details of the absorption spectrum mod…
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We propose a theory of optical absorption in monolayer graphene-hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moiré superlattice potential for the graphene electrons which modifies the selection rules for absorption of incoming photons in the infrared to visible frequency range. The details of the absorption spectrum modification depend on the relative strength of the various symmetry-allowed couplings between the graphene electrons and the hBN, and the resulting nature of the reconstructed band structure.
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Submitted 9 December, 2013; v1 submitted 9 September, 2013;
originally announced September 2013.
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Moiré minibands in graphene heterostructures with almost commensurate sqrt3 x sqrt3 hexagonal crystals
Authors:
J. R. Wallbank,
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
We present a phenomenological theory of the low energy moiré minibands of Dirac electrons in graphene placed on an almost commensurate hexagonal underlay with a unit cell pproximately three times larger than that of graphene.A slight incommensurability results in a periodically modulated intervalley scattering for electrons in graphene. In contrast to the perfectly commensurate Kekulé distortion o…
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We present a phenomenological theory of the low energy moiré minibands of Dirac electrons in graphene placed on an almost commensurate hexagonal underlay with a unit cell pproximately three times larger than that of graphene.A slight incommensurability results in a periodically modulated intervalley scattering for electrons in graphene. In contrast to the perfectly commensurate Kekulé distortion of graphene, such supperlattice perturbation leaves the zero energy Dirac cones intact, but is able to open a band gap at the edge of the first moiré subbband, asymmetrically in the conduction and valence bands.
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Submitted 18 June, 2013;
originally announced June 2013.
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Cloning of Dirac fermions in graphene superlattices
Authors:
L. A. Ponomarenko,
R. V. Gorbachev,
G. L. Yu,
D. C. Elias,
R. Jalil,
A. A. Patel,
A. Mishchenko,
A. S. Mayorov,
C. R. Woods,
J. R. Wallbank,
M. Mucha-Kruczynski,
B. A. Piot,
M. Potemski,
I. V. Grigorieva,
K. S. Novoselov,
F. Guinea,
V. I. Fal'ko,
A. K. Geim
Abstract:
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron o…
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Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.
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Submitted 9 May, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Generic Miniband Structure of Graphene on a Hexagonal Substrate
Authors:
J. R. Wallbank,
A. A. Patel,
M. Mucha-Kruczynski,
A. K. Geim,
V. I. Fal'ko
Abstract:
Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfac…
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Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.
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Submitted 2 May, 2013; v1 submitted 20 November, 2012;
originally announced November 2012.
