Showing 1–13 of 13 results for author: Cakır, D

Stability of adsorption of Mg and Na on sulfur-functionalized MXenes

Authors: G. Chaney, D. Çakır, F. M. Peeters, C. Ataca

Abstract: Two-dimensional materials composed of transition metal carbides and nitrides (MXenes) are poised to revolutionize energy conversion and storage. In this work, we used density functional theory (DFT) to investigate adsorption of Mg and Na adatoms on five M$_{2}$CS$_{2}$ monolayers (where M= Mo, Nb, Ti, V, Zr) for battery applications. We assessed the stability of the adatom (i.e. Na and Mg)-monolay… ▽ More Two-dimensional materials composed of transition metal carbides and nitrides (MXenes) are poised to revolutionize energy conversion and storage. In this work, we used density functional theory (DFT) to investigate adsorption of Mg and Na adatoms on five M$_{2}$CS$_{2}$ monolayers (where M= Mo, Nb, Ti, V, Zr) for battery applications. We assessed the stability of the adatom (i.e. Na and Mg)-monolayer systems by calculating adsorption and formation energies, as well as voltages as a function of surface coverage. For instance, we found that Mo$_{2}$CS$_{2}$ cannot support a full layer of Na nor even a single Mg atom. Na and Mg exhibit the strongest binding on Zr$_{2}$CS$_{2}$, followed by Ti$_{2}$CS$_{2}$, Nb$_{2}$CS$_{2}$ and V$_{2}$CS$_{2}$. Using the nudged elastic band method (NEB) we computed promising diffusion barriers for both dilute and nearly-full ion surface coverage cases. In the dilute ion adsorption case, a single Mg and Na atom on Ti$_{2}$CS$_{2}$ experience $\sim$0.47 eV and $\sim$0.10 eV diffusion barriers between the lowest energy sites, respectively. For a nearly full surface coverage, a Na ion moving on Ti$_{2}$CS$_{2}$ experiences a $\sim$0.33 eV energy barrier, implying a concentration dependent diffusion barrier. Our molecular dynamics results indicate that three (one) layers (layer) of Mg (Na) ion on both surfaces of Ti$_{2}$CS$_{2}$ remain stable at T=300 K. While, according to voltage calculations, Zr$_{2}$CS$_{2}$ can store Na up to three atomic layers, our MD simulations predict that the outermost layers detach from Zr$_{2}$CS$_{2}$ monolayer due to weak interaction between Na ions and the monolayer. This suggests that MD simulations are essential to confirming the stability of an ion-electrode system - an insight that is mostly absence in previous studies. △ Less

Submitted 20 October, 2021; originally announced October 2021.

Comprehensive Study of Lithium Adsorptionand Diffusion on Janus Mo/WXY (X, Y= S,Se, Te) using First Principles and MachineLearning Approaches

Authors: Gracie Chaney, Akram Ibrahim, Fatih Ersan, Deniz Çakır, Can Ataca

Abstract: The structural asymmetry of two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) produces internal dipole moments that result in interesting electronic properties. These properties differ from the regular (symmetric) TMD structures that the Janus structures are derived from. In this study, we, at first, examine adsorption and diffusion of a single Li atom on regular MX2and Janus MXY… ▽ More The structural asymmetry of two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) produces internal dipole moments that result in interesting electronic properties. These properties differ from the regular (symmetric) TMD structures that the Janus structures are derived from. In this study, we, at first, examine adsorption and diffusion of a single Li atom on regular MX2and Janus MXY (M = Mo, W; XY =S, Se, Te) TMD structures at various concentrations using first principles calculations within density functional theory. To gain more physical insight and prepare for future investigations of regular TMD and Janus materials, we applied a supervised machine learning (ML) model that uses cluster-wise linear regression to predict the adsorption energies of Li on top of 2D TMDs. We developed a universal representation with few descriptors that take into account the intrinsic dipole moment and the electronic structure of regular and Janus 2D layers, the side where the adsorption takes place and the concentration dependence of adatom doping. This representation can easily be generalized to be used for other impurities and 2D layer combinations, including alloys as well. At last, we focus on analyzing these structures as possible anodes in battery applications. We conducted Li diffusion, open-circuit-voltage and storage capacity simulations. We report that Lithium atoms are found to easily migrate between transition metal (Mo, W) top sites for each considered case, and in these respects many of the examined Janus materials are comparable or superior to graphene and to regular TMDs. The results imply that theexamined Janus structures should perform well as electrodes in Li-ion batteries. △ Less

Submitted 21 July, 2021; originally announced July 2021.

Comments: Accepted by ACS: Applied Materials and Interfaces

MSC Class: N/A

First-principles discovery of stable two-dimensional materials with high-level piezoelectric response

Authors: Tuğbey Kocabaş, Deniz Çakır, Cem Sevik

Abstract: The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the… ▽ More The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the piezoelectric potential of layered materials has not been performed yet. In this study, we systematically investigated the piezoelectric ($e_{11}$, $d_{11}$) and elastic (C$_{11}$ and C$_{12}$) properties of 128 thermodynamically stable two-dimensional (2D) semiconductor materials by employing first-principle methods. Our high-throughput approach demonstrates that the materials containing Group-\textrm{V} elements produce significantly high piezoelectric strain constants, $d_{11}$ $>$ 40 pmV$^{-1}$, and 49 of the materials considered have the $e_{11}$ coefficient higher than MoS$_{2}$ insomuch as BrSSb has one of the largest $d_{11}$ with a value of 373.0 pmV$^{-1}$. Moreover, we established a simple empirical model in order to estimate the $d_{11}$ coefficients by utilizing the relative ionic motion in the unit cell and the polarizability of the individual elements in the compounds. △ Less

Submitted 9 September, 2020; v1 submitted 13 February, 2020; originally announced February 2020.

Silicene Like Domains on IrSi3 Crystallites

Authors: Dylan Nicholls, Fatima, Deniz Çakır, Nuri Oncel

Abstract: Recently, silicene, the graphene equivalent of silicon, has attracted a lot of attention due to its compatibility with Si-based electronics. So far, silicene has been epitaxy grown on various crystalline surfaces such as Ag(110), Ag(111), Ir(111), ZrB2(0001) and Au(110) substrates. Here, we present a new method to grow silicene via high temperature surface reconstruction of hexagonal IrSi3 nanocry… ▽ More Recently, silicene, the graphene equivalent of silicon, has attracted a lot of attention due to its compatibility with Si-based electronics. So far, silicene has been epitaxy grown on various crystalline surfaces such as Ag(110), Ag(111), Ir(111), ZrB2(0001) and Au(110) substrates. Here, we present a new method to grow silicene via high temperature surface reconstruction of hexagonal IrSi3 nanocrystals. The h-IrSi3 nanocrystals are formed by annealing thin Ir layers on Si(111) surface. A detailed analysis of the STM images shows the formation of silicene like domains on the surface of some of the IrSi3 crystallites. We studied both morphology and electronic properties of these domains by using both scanning tunneling microscopy/spectroscopy and first-principles calculation methods. △ Less

Submitted 11 March, 2019; v1 submitted 29 October, 2018; originally announced October 2018.

Gate induced monolayer behavior in twisted bilayer black phosphorus

Authors: Cem Sevik, John R. Wallbank, Oguz Gulseren, Francois M. Peeters, Deniz Cakır

Abstract: Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model whic… ▽ More Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model which is able to capture most of the low energy features and is valid for arbitrary twist angles. The electronic spectrum of 90$^\circ$ twisted bilayer black phosphorus is found to be x-y isotropic in contrast to the monolayer. However x-y anisotropy, and a partial return to monolayer-like behavior, particularly in the valence band, can be induced by an external out-of-plane electric field. Moreover, the preferred hole effective mass can be rotated by 90$^\circ$ simply by changing the direction of the applied electric field. In particular, a +0.4 (-0.4) V/Å out-of-plane electric field results in a $\sim$60\% increase in the hole effective mass along the y (x) axis and enhances the $m^*_{y}/m^*_{x}$ ($m^*_{x}/m^*_{y}$) ratio as much as by a factor of 40. Our DFT and $\vec{k}\cdot\vec{p}$ simulations clearly indicate that the twist angle in combination with an appropriate gate voltage is a novel way to tune the electronic and optical properties of bilayer phosphorus and it gives us a new degree of freedom to engineer the properties of black phosphorus based devices. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: 8 pages, 8 figures

Journal ref: 2D Mater. 4 (2017) 035025

Distinct Correlation between the Vibrational and Thermal Transport Properties of Group \textrm{VA} Monolayer Crystals

Authors: Tugbey Kocabas, Deniz Cakir, Oguz Gulseren, Feridun Ay, Nihan K. Perkgoz, Cem Sevik

Abstract: The investigation of thermal transport properties of novel two dimensional materials is crucially important in order to assess their potential to be used in future technological applications, such as thermoelectric power generation. In this respect, lattice thermal transport properties of monolayer structures of the group \textrm{VA} elements (P, As, Sb, Bi, PAs, PSb, PBi, AsSb, AsBi, SbBi, P… ▽ More The investigation of thermal transport properties of novel two dimensional materials is crucially important in order to assess their potential to be used in future technological applications, such as thermoelectric power generation. In this respect, lattice thermal transport properties of monolayer structures of the group \textrm{VA} elements (P, As, Sb, Bi, PAs, PSb, PBi, AsSb, AsBi, SbBi, P$_{3}$As$_{1}$, P$_{3}$Sb$_{1}$, P$_{1}$As$_{3}$, As$_{3}$Sb$_{1}$) with black phosphorus like puckered structure were systematically investigated by first principles calculations and an iterative solution of the Phonon Boltzmann transport equation. Phosphorene was found to have the highest lattice thermal conductivity, $κ$, due to its low average atomic mass and strong interatomic bonding character. As a matter of course, anisotropic $κ$ were obtained for all the considered materials, owing to anisotropy in phonon group velocities and scattering rates (relaxation times) calculated for these structures. However, the determined linear correlation between the anisotropy in $κ$ of P, As, and Sb is significant. The results corresponding to the studied compound structures clearly point out that thermal (electronic) conductivity of pristine monolayers might be suppressed (improved) by alloying them with the same group elements. For instance, the room temperature $κ$ of PBi along armchair direction was predicted as low as 1.5 Wm$^{-1}$K$^{-1}$, whereas that of P was predicted to be 21 Wm$^{-1}$K$^{-1}$. In spite of the apparent differences in structural and vibrational properties, we peculiarly revealed an intriguing correlation between the $κ$ of all the considered materials as $κ$=c$_{1}$ + c$_{2}$/$m^{2}$, in particular along zigzag direction. △ Less

Submitted 19 December, 2017; v1 submitted 24 April, 2017; originally announced April 2017.

Piezoelectricity in two-dimensional materials: a comparative study between lattice dynamics and ab-initio calculations

Authors: K. H. Michel, D. Cakır, C. Sevik, F. M. Peeters

Abstract: Elastic constant C_{11} and piezoelectric stress constant e_{1,11} of two-dimensional (2D) dielectric materials comprising h-BN, 2H MoS2 and other transition metal dichalcogenides (TMDCs) and -dioxides (TMDOs) are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained by ab-initio calculations. We identify the difference between clamped-ion and r… ▽ More Elastic constant C_{11} and piezoelectric stress constant e_{1,11} of two-dimensional (2D) dielectric materials comprising h-BN, 2H MoS2 and other transition metal dichalcogenides (TMDCs) and -dioxides (TMDOs) are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained by ab-initio calculations. We identify the difference between clamped-ion and relaxed-ion contributions with the dependence on inner strains which are due to the relative displacements of the ions in the unit cell. Lattice dynamics allows to express the inner strains contributions in terms of microscopic quantities such as effective ionic charges and optoacoustical couplings, which allows us to clarify differences in the piezoelectric behavior between h- BN versus MoS2. Trends in the different microscopic quantities as functions of atomic composition are discussed. △ Less

Submitted 21 February, 2017; originally announced March 2017.

Comments: Accepted:PRB

Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus

Authors: Deniz Cakir, Cem Sevik, Francois M. Peeters

Abstract: The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic a… ▽ More The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Anisotropic exciton Stark shift in black phosphorus

Authors: Andrey Chaves, T. Low, P. Avouris, D. Cakir, F. M. Peeters

Abstract: We calculate the excitonic spectrum of few-layer black phosphorus by direct diagonalization of the effective mass Hamiltonian in the presence of an applied in-plane electric field. The strong attractive interaction between electrons and holes in this system allows one to investigate the Stark effect up to very high ionizing fields, including also the excited states. Our results show that the band… ▽ More We calculate the excitonic spectrum of few-layer black phosphorus by direct diagonalization of the effective mass Hamiltonian in the presence of an applied in-plane electric field. The strong attractive interaction between electrons and holes in this system allows one to investigate the Stark effect up to very high ionizing fields, including also the excited states. Our results show that the band anisotropy in black phosphorus becomes evident in the direction dependent field induced polarizability of the exciton. △ Less

Submitted 10 February, 2015; originally announced February 2015.

Tuning of the electronic and optical properties of single layer black phosphorus by strain

Authors: Deniz Çakır, Hasan Sahin, François M. Peeters

Abstract: Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic conductivity and optical response are sensitive to the magnitude and the orientation of the applied strain. We found that the inclusion of many body effects is essen… ▽ More Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic conductivity and optical response are sensitive to the magnitude and the orientation of the applied strain. We found that the inclusion of many body effects is essential for the correct description of the electronic properties of monolayer BP; for example while the electronic gap of strainless BP is found to be 0.90 eV by using semilocal functionals, it becomes 2.31 eV when many-body effects are taken into account within the G0W0 scheme. Applied tensile strain was shown to significantly enhances electron transport along zigzag direction of BP. Furthermore, biaxial strain is able to tune the optical band gap of monolayer BP from 0.38 eV (at -8% strain) to 2.07 eV (at 5.5%). The exciton binding energy is also sensitive to the magnitude of the applied strain. It is found to be 0.40 eV for compressive biaxial strain of -8%, and it becomes 0.83 eV for tensile strain of 4%. Our calculations demonstrate that the optical response of BP can be significantly tuned using strain engineering which appears as a promising way to design novel photovoltaic devices that capture a broad range of solar spectrum. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Magnetoresistance in multilayer fullerene spin valves: a first-principles study

Authors: Deniz Çakır, Diana M. Otálvaro, Geert Brocks

Abstract: Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresist… ▽ More Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C60 layers. Exploiting a generalized Julli`ere model we can trace the differences in spin-dependent transport between C60 and C70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage. △ Less

Submitted 27 October, 2014; originally announced October 2014.

From spin-polarized interfaces to giant magnetoresistance in organic spin valves

Authors: Deniz Çakır, Diana M. Otálvaro, Geert Brocks

Abstract: We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the app… ▽ More We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response, and also decreases as a function of bias. Both these trends can be modelled in terms of prominent spin-dependent Fe|C70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Comments: 13 pages, 5 figures

Half-metallic silicon nanowires

Authors: Engin Durgun, Deniz Cakir, Nurten Akman, Salim Ciraci

Abstract: From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with high magnetic moment and may have also signifi… ▽ More From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with high magnetic moment and may have also significant spin-polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of dopant TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but can also initiate new research on spintronic applications of silicon nanowires. △ Less

Submitted 1 April, 2007; originally announced April 2007.

Comments: 5 pagesm 4 figures