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One-dimensional Lieb superlattices: from the discrete to the continuum limit
Authors:
Dylan Jones,
Marcin Mucha-Kruczynski,
Adelina Ilie,
Lucian Covaci
Abstract:
The Lieb lattice is one of the simplest lattices that exhibits both linear Dirac-like and flat topological electronic bands. We propose to further tailor its electronic properties through periodic 1D electrostatic superlattices (SLs), which, in the long wavelength limit, were predicted to give rise to novel transport signatures, such as the omnidirectional super-Klein tunnelling (SKT). By numerica…
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The Lieb lattice is one of the simplest lattices that exhibits both linear Dirac-like and flat topological electronic bands. We propose to further tailor its electronic properties through periodic 1D electrostatic superlattices (SLs), which, in the long wavelength limit, were predicted to give rise to novel transport signatures, such as the omnidirectional super-Klein tunnelling (SKT). By numerically modelling the electronic structure at tight-binding level, we uncover the evolution of the Lieb SL band structure from the discrete all the way to the continuum regime and build a comprehensive picture of the Lieb lattice under 1D potentials. This approach allows us to also take into consideration the discrete lattice symmetry-breaking that occurs at the well/barrier interfaces created by the 1D SL, whose consequences cannot be explored using the previous low energy and long wavelength approaches. We find novel features in the band structure, among which are intersections of quadratic and flat bands, tilted Dirac cones, or series of additional anisotropic Dirac cones at energies where the SKT is predicted. Such features are relevant to experimental realizations of electronic transport in Lieb 1D SL realized in artificial lattices or in real material systems like 2D covalent organic/metal-organic frameworks and inorganic 2D solids.
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Submitted 15 March, 2024;
originally announced March 2024.
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ARPES signatures of few-layer twistronic graphenes
Authors:
J. E. Nunn,
A. McEllistrim,
A. Weston,
A. Garcia-Ruiz,
M. D. Watson,
M. Mucha-Kruczynski,
C. Cacho,
R. Gorbachev,
V. I. Fal'ko,
N. R. Wilson
Abstract:
Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the…
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Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the twist-dependent ($1^\circ < θ< 8^\circ$) electronic band structure of few-layer graphenes, including twisted bilayer, monolayer-on-bilayer, and double-bilayer graphene (tDBG). Direct comparison is made between experiment and theory, using a hybrid $\textbf{k}\cdot\textbf{p}$ model for interlayer coupling and implementing photon-energy-dependent phase shifts for photo-electrons from consecutive layers to simulate ARPES spectra. Quantitative agreement between experiment and theory is found across twist angles, stacking geometries, and back-gate voltages, validating the models and revealing displacement field induced gap openings in twisted graphenes. However, for tDBG at $θ=1.5\pm0.2^\circ$, close to the predicted magic-angle of $θ=1.3^\circ$, a flat band is found near the Fermi-level with measured bandwidth of $E_w = 31\pm5$ meV. Analysis of the gap between the flat band and the next valence band shows significant deviations between experiment ($Δ_h=46\pm5$meV) and the theoretical model ($Δ_h=5$meV), indicative of the importance of lattice relaxation in this regime.
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Submitted 4 April, 2023;
originally announced April 2023.
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Controlling charge density order in 2H-TaSe$_{2}$ using a van Hove singularity
Authors:
W. R. B. Luckin,
Y. Li,
J. Jiang,
S. M. Gunasekera,
C. Wen,
Y. Zhang,
D. Prabhakaran,
F. Flicker,
Y. Chen,
M. Mucha-Kruczynski
Abstract:
We report on the interplay between a van Hove singularity and a charge density wave state in 2H-TaSe$_{2}$. We use angle-resolved photoemission spectroscopy to investigate changes in the Fermi surface of this material under surface doping with potassium. At high doping, we observe modifications which imply the disappearance of the $(3\times 3)$ charge density wave and formation of a different corr…
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We report on the interplay between a van Hove singularity and a charge density wave state in 2H-TaSe$_{2}$. We use angle-resolved photoemission spectroscopy to investigate changes in the Fermi surface of this material under surface doping with potassium. At high doping, we observe modifications which imply the disappearance of the $(3\times 3)$ charge density wave and formation of a different correlated state. Using a tight-binding-based approach as well as an effective model, we explain our observations as a consequence of coupling between the single-particle Lifshitz transition during which the Fermi level passes a van Hove singularity and the charge density order. In this scenario, the high electronic density of states associated with the van Hove singularity induces a change in the periodicity of the charge density wave from the known $(3\times 3)$ to a new $(2\times 2)$ superlattice.
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Submitted 8 December, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
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2T-POT Hawkes model for left- and right-tail conditional quantile forecasts of financial log-returns: out-of-sample comparison of conditional EVT models
Authors:
Matthew F. Tomlinson,
David Greenwood,
Marcin Mucha-Kruczynski
Abstract:
Conditional extreme value theory (EVT) methods promise enhanced forecasting of the extreme tail events that often dominate systemic risk. We present an improved two-tailed peaks-over-threshold (2T-POT) Hawkes model that is adapted for conditional quantile forecasting in both the left and right tails of a univariate time series. This is applied to the daily log-returns of six large cap indices. We…
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Conditional extreme value theory (EVT) methods promise enhanced forecasting of the extreme tail events that often dominate systemic risk. We present an improved two-tailed peaks-over-threshold (2T-POT) Hawkes model that is adapted for conditional quantile forecasting in both the left and right tails of a univariate time series. This is applied to the daily log-returns of six large cap indices. We also take the unique step of fitting the model at multiple exceedance thresholds (from the 1.25% to 25.00% mirrored quantiles). Quantitatively similar asymmetries in Hawkes parameters are found across all six indices, adding further empirical support to a temporal leverage effect in financial price time series in which the impact of losses is not only larger but also more immediate. Out-of-sample backtests find that our 2T-POT Hawkes model is more reliably accurate than the GARCH-EVT model when forecasting (mirrored) value-at-risk and expected shortfall at the 5% coverage level and below. This suggests that asymmetric Hawkes-type arrival dynamics are a better approximation of the true data generating process for extreme daily log-returns than GARCH-type conditional volatility; our 2T-POT Hawkes model therefore presents a better performing alternative for financial risk modelling.
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Submitted 13 October, 2022; v1 submitted 2 February, 2022;
originally announced February 2022.
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Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides
Authors:
Nourdine Zibouche,
Surani M. Gunasekera,
Daniel Wolverson,
Marcin Mucha-Kruczynski
Abstract:
The new class of Janus two-dimensional (2D) transition-metal dichalcogenides with two different interfaces are currently gaining increasing attention due to their distinct properties different from the typical 2D materials. Here, we show that in-plane anisotropy of a 2D atomic crystal, like ReS$_{2}$ or ReSe$_{2}$, allows formation of a large number of inequivalent Janus monolayers. We use first-p…
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The new class of Janus two-dimensional (2D) transition-metal dichalcogenides with two different interfaces are currently gaining increasing attention due to their distinct properties different from the typical 2D materials. Here, we show that in-plane anisotropy of a 2D atomic crystal, like ReS$_{2}$ or ReSe$_{2}$, allows formation of a large number of inequivalent Janus monolayers. We use first-principles calculations to investigate the structural stability of 29 distinct ReX$_{2-x}$Y$_{x}$ ($\mathrm{X,Y \in \{S,Se\}}$) structures, which can be obtained by selective exchange of exposed chalcogens in a ReX$_{2}$ monolayer. We also examine the electronic properties and work function of the most stable Janus monolayers and show that the large number of inequivalent structures provides a way to engineer spin-orbit splitting of the electronic bands. We find that the breaking of inversion symmetry leads to sizable spin splittings and spontaneous diople moments than are larger than those in other Janus dichalcogenides. Moreover, our caluclations suggest that the work function of the Janus monolayers can be tuned by varying the content of the substituting chalcogen. Our work demonstrates that in-plane anisotropy provides additional flexibility in sub-layer engineering of 2D atomic crystals.
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Submitted 19 May, 2022; v1 submitted 31 August, 2021;
originally announced September 2021.
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Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one dimensional electronic character in ReSe$_{2}$
Authors:
Lewis S. Hart,
Surani M. Gunasekera,
James L. Webb,
Marcin Mucha-Kruczynski,
José Avila,
María C. Asensio,
Daniel Wolverson
Abstract:
We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increa…
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We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increase of in-plane anisotropy induced by changes in the interlayer coupling and suggests progressively more one-dimensional character of electronic states in few-layer rhenium dichalcogenides.
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Submitted 10 August, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Asymmetric excitation of left- and right-tail extreme events probed using a Hawkes model: application to financial returns
Authors:
Matthew F. Tomlinson,
David Greenwood,
Marcin Mucha-Kruczynski
Abstract:
We construct a two-tailed peak-over-threshold Hawkes model that captures asymmetric self- and cross-excitation in and between left- and right-tail extreme values within a time series. We demonstrate its applicability by investigating extreme gains and losses within the daily log-returns of the S&P 500 equity index. We find that the arrivals of extreme losses and gains are described by a common con…
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We construct a two-tailed peak-over-threshold Hawkes model that captures asymmetric self- and cross-excitation in and between left- and right-tail extreme values within a time series. We demonstrate its applicability by investigating extreme gains and losses within the daily log-returns of the S&P 500 equity index. We find that the arrivals of extreme losses and gains are described by a common conditional intensity to which losses contribute twice as much as gains. However, the contribution of the former decays almost five times more quickly than that of the latter. We attribute these asymmetries to the different reactions of market traders to extreme upward and downward movements of asset prices: an example of negativity bias, wherein trauma is more salient than euphoria.
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Submitted 10 August, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
Authors:
Matthew J. Hamer,
Alessio Giampietri,
Viktor Kandyba,
Francesca Genuzio,
Tevfik O. Mentes,
Andrea Locatelli,
Roman V. Gorbachev,
Alexei Barinov,
Marcin Mucha-Kruczynski
Abstract:
In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Bri…
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In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $θ>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme doping of graphene, could be explored experimentally.
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Submitted 27 January, 2022; v1 submitted 19 October, 2020;
originally announced October 2020.
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Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
Authors:
J. J. P. Thompson,
D. Pei,
H. Peng,
H. Wang,
N. Channa,
H. L. Peng,
A. Barinov,
N. B. M. Schröter,
Y. Chen,
M. Mucha-Kruczyński
Abstract:
Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate t…
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Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate that the interatomic coupling between two two-dimensional crystals can be determined from angle-resolved photoemission spectra of a trilayer structure with one aligned and one twisted interface. Each of the interfaces provides complementary information and together they enable self-consistent determination of the coupling. We parametrize interatomic coupling for carbon atoms by studying twisted trilayer graphene and show that the result can be applied to structures with different twists and number of layers. Our approach demonstrates how to extract fundamental information about interlayer coupling in a stack of two-dimensional crystals and can be applied to many other van der Waals interfaces.
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Submitted 17 July, 2020;
originally announced July 2020.
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Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe$_{2}$
Authors:
B. K. Choi,
S. Ulstrup,
S. M. Gunasekera,
J. Kim,
S. Y. Lim,
L. Moreschini,
J. S. Oh,
S. -H. Chun,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
H. Cheong,
I. -W. Lyo,
M. Mucha-Kruczynski,
Y. J. Chang
Abstract:
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemissio…
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Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe$_{2}$, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe$_{2}$, in contrast to the 2H materials, the out-of-plane transition metal $d_{z^{2}}$ and chalcogen $p_{z}$ orbitals do not contribute significantly to the top of the valence band which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe$_{2}$ using scanning tunneling spectroscopy and explore the implications on the gap following surface-doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe$_{2}$. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place amongst two-dimensional crystals.
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Submitted 29 May, 2020;
originally announced May 2020.
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Electronic Raman Scattering in Twistronic Few-Layer Graphene
Authors:
A. Garcia-Ruiz,
J. J. P. Thompson,
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of Dirac states, and the…
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We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of Dirac states, and the other resulting from band folding caused by moiré superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for non-invasive characterization of the twist, even in hBN-encapsulated structures.
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Submitted 5 October, 2020; v1 submitted 21 May, 2020;
originally announced May 2020.
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Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite
Authors:
A. Garcia-Ruiz Fuentes,
S. Slizovskiy,
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
Rhombohedral graphite features peculiar electronic properties, including persistence of low-energy surface bands of a topological nature. Here, we study the contribution of electron-hole excitations towards inelastic light scattering in thin films of rhombohedral graphite. We show that, in contrast to the featureless electron-hole contribution towards Raman spectrum of graphitic films with Bernal…
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Rhombohedral graphite features peculiar electronic properties, including persistence of low-energy surface bands of a topological nature. Here, we study the contribution of electron-hole excitations towards inelastic light scattering in thin films of rhombohedral graphite. We show that, in contrast to the featureless electron-hole contribution towards Raman spectrum of graphitic films with Bernal stacking, the inelastic light scattering accompanied by electron-hole excitations in crystals with rhombohedral stacking produces distinct features in the Raman signal which can be used both to identify the stacking and to determine the number of layers in the film.
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Submitted 7 August, 2019; v1 submitted 29 May, 2019;
originally announced May 2019.
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Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
Authors:
J. J . P. Thompson,
D. J. Leech,
M. Mucha-Kruczyński
Abstract:
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed…
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We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarisation of the tunnelling current. We estimate that valley polarisation $\sim 70\%$ can be achieved in high quality devices at $B=1$ T. Moreover, we demonstrate that strong valley polarisation can be obtained both in the limit of strong-momentum conserving tunnelling and in lower quality devices where this constraint is lifted.
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Submitted 15 February, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Negative differential resistance in Van der Waals heterostructures due to moiré-induced spectral reconstruction
Authors:
D. J. Leech,
J. J. P. Thompson,
M. Mucha-Kruczyński
Abstract:
Formation of moiré superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss theoretically electron transport in a Van der Waals tunnelling transistor in which one of the electrodes is made of two crystals forming a moiré superlattice at thei…
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Formation of moiré superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss theoretically electron transport in a Van der Waals tunnelling transistor in which one of the electrodes is made of two crystals forming a moiré superlattice at their interface. By investigating structures containing either the aligned graphene/hexagonal boron nitride heterostructure or twisted bilayer graphene, we show that negative differential resistance is possible in such transistors as a consequence of the superlattice-induced changes in the electronic density of states and without the need of momentum conserving tunnelling present in high-quality exfoliated devices.
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Submitted 8 August, 2018; v1 submitted 22 February, 2018;
originally announced February 2018.
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Electronic band structure of rhenium dichalcogenides
Authors:
Surani M. Gunasekera,
Daniel Wolverson,
Lewis S. Hart,
Marcin Mucha-Kruczynski
Abstract:
The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be…
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The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be located at special high symmetry points. We find that both materials are indirect gap materials and that one must be careful to consider the whole Brillouin zone volume in addressing this question.
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Submitted 14 March, 2018; v1 submitted 9 January, 2018;
originally announced January 2018.
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Superconductivity-induced features in electronic Raman spectrum of monolayer graphene
Authors:
Aitor García-Ruiz Fuentes,
Marcin Mucha-Kruczynski,
Vladimir Falko
Abstract:
Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic order parameter in a single valley and find a Raman peak at a shift set by the size of the superconducting gap. The height of this peak is proportional to the squar…
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Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic order parameter in a single valley and find a Raman peak at a shift set by the size of the superconducting gap. The height of this peak is proportional to the square root of the gap and the third power of the Fermi level, and we estimate its quantum efficiency as $I\sim10^{-14}$.
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Submitted 26 December, 2017;
originally announced December 2017.
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Emergence of Frohlich polaron from interlayer electron-phonon coupling in van der Waals heterostructure
Authors:
Chaoyu Chen,
Jose Avila,
Shuopei Wang,
Yao Wang,
Marcin Mucha-Kruczyński,
Cheng Shen,
Rong Yang,
Benjamin Nosarzewski,
Thomas P. Devereaux,
Guangyu Zhang,
Maria C. Asensio
Abstract:
Van der Waals heterostructures, vertical stacks of layered materials, offer newopportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-B…
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Van der Waals heterostructures, vertical stacks of layered materials, offer newopportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-BN valence band maxima, with energy spacing coincident with the highest phonon energy of the heterostructure|an indication of Frohlich polaron formation due to forward scattering electron-phonon coupling. Parabolic fitting of the h-BN bands yields an effective mass enhancement of ~ 2.3, suggesting an intermediate coupling strength. Our theoretical simulations based on Migdal-Eliashberg theory corroborate the experimental results, allowing the extraction of microscopic physical parameters. Moreover,renormalisation of graphene $π$ band is observed due to the hybridisation with the h-BN band. Our work generalises the polaron study from transition metal oxides to Van derWaals heterostructures with higher material exibility, highlighting interlayer coupling as an extra degree of freedom to explore emergent phenomena.
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Submitted 23 November, 2017; v1 submitted 1 July, 2017;
originally announced July 2017.
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Moiré band model and band gaps of graphene on hexagonal boron nitride
Authors:
Jeil Jung,
Evan Laksono,
Ashley M. DaSilva,
Allan H. MacDonald,
Marcin Mucha-Kruczyński,
Shaffique Adam
Abstract:
Nearly aligned graphene on hexagonal boron nitride (G/BN) can be accurately modeled by a Dirac Hamiltonian perturbed by smoothly varying moiré pattern pseudospin fields. Here, we present the moiré-band model of G/BN for arbitrary small twist angles under a framework that combines symmetry considerations with input from ab-initio calculations. Our analysis of the band gaps at the primary and second…
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Nearly aligned graphene on hexagonal boron nitride (G/BN) can be accurately modeled by a Dirac Hamiltonian perturbed by smoothly varying moiré pattern pseudospin fields. Here, we present the moiré-band model of G/BN for arbitrary small twist angles under a framework that combines symmetry considerations with input from ab-initio calculations. Our analysis of the band gaps at the primary and secondary Dirac points highlights the role of inversion symmetry breaking contributions of the moiré patterns, leading to primary Dirac point gaps when the moiré strains give rise to a finite average mass, and to secondary gaps when the moiré pseudospin components are mixed appropriately. The pseudomagnetic strain fields which can reach values of up to $\sim$40 Tesla near symmetry points in the moiré cell stem almost entirely from virtual hopping and dominate over the contributions arising from bond length distortions due to the moiré strains.
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Submitted 19 June, 2017;
originally announced June 2017.
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Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
Authors:
Lewis S Hart,
James L Webb,
Sara Dale,
Simon J. Bending,
Marcin Mucha-Kruczynski,
Daniel Wolverson,
Chaoyu Chen,
José Avila,
Maria C. Asensio
Abstract:
ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to…
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ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings.
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Submitted 1 April, 2017;
originally announced April 2017.
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Controlled formation of an isolated miniband in bilayer graphene on an almost commensurate $\sqrt{3} \times \sqrt{3}$ substrate
Authors:
D. J. Leech,
M. Mucha-Kruczyński
Abstract:
We investigate theoretically the interplay between the effects of a perpendicular electric field and incommensurability at the interface on the electronic properties of a heterostructure of bilayer graphene and a semiconducting substrate with a unit cell almost three times larger then that of graphene. It is known that the former introduces an asymmetry in the distribution of the electronic wave f…
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We investigate theoretically the interplay between the effects of a perpendicular electric field and incommensurability at the interface on the electronic properties of a heterostructure of bilayer graphene and a semiconducting substrate with a unit cell almost three times larger then that of graphene. It is known that the former introduces an asymmetry in the distribution of the electronic wave function between the layers and opens a band gap in the electronic spectrum. The latter generates a long wavelength periodic moiré perturbation of graphene electrons which couples states in inequivalent graphene Brillouin zone corners and leads to the formation of minibands. We show that, depending on the details of the moiré perturbation, the miniband structure can be tuned from that with a single band gap at the neutrality point and over-lapping minibands on the conduction/valence band side to a situation where a single narrow miniband is separated by gaps from the rest of the spectrum.
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Submitted 13 July, 2016;
originally announced July 2016.
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Zero-energy modes and valley asymmetry in the Hofstadter spectrum of bilayer graphene van der Waals heterostructures with hBN
Authors:
Xi Chen,
J. R. Wallbank,
M. Mucha-Kruczynski,
E. McCann,
V. I. Fal'ko
Abstract:
We investigate the magnetic minibands of a heterostructure consisting of bilayer graphene (BLG) and hexagonal boron nitride (hBN) by numerically diagonalizing a two-band Hamiltonian that describes electrons in BLG in the presence of a moire potential. Due to inversion-symmetry breaking characteristic for the moire potential, the valley symmetry of the spectrum is broken, but despite this, the zero…
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We investigate the magnetic minibands of a heterostructure consisting of bilayer graphene (BLG) and hexagonal boron nitride (hBN) by numerically diagonalizing a two-band Hamiltonian that describes electrons in BLG in the presence of a moire potential. Due to inversion-symmetry breaking characteristic for the moire potential, the valley symmetry of the spectrum is broken, but despite this, the zero-energy Landau level in BLG survives, albeit with reduced degeneracy. In addition, we derive effective models for the low-energy features in the magnetic minibands and demonstrate the appearance of secondary Dirac points in the valence band, which we confirm by numerical simulations. Then, we analyze how single-particle gaps in the fractal energy spectrum produce a sequence of incompressible states observable under a variation of carrier density and magnetic field.
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Submitted 7 March, 2016;
originally announced March 2016.
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Moire miniband features in the angle-resolved photoemission spectra of graphene/hBN heterostructures
Authors:
M. Mucha-Kruczynski,
J. R. Wallbank,
V. I. Fal'ko
Abstract:
We identify features in the angle-resolved photoemission spectra (ARPES) arising from the periodic pattern characteristic for graphene heterostructure with hexagonal boron nitride (hBN). For this, we model ARPES spectra and intensity maps for five microscopic models used previously to describe moire superlattice in graphene/hBN systems. We show that detailed analysis of these features can be used…
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We identify features in the angle-resolved photoemission spectra (ARPES) arising from the periodic pattern characteristic for graphene heterostructure with hexagonal boron nitride (hBN). For this, we model ARPES spectra and intensity maps for five microscopic models used previously to describe moire superlattice in graphene/hBN systems. We show that detailed analysis of these features can be used to pin down the microscopic mechanism of the interaction between graphene and hBN. We also analyze how the presence of a moire-periodic strain in graphene or scattering of photoemitted electrons off hBN can be distinguished from the miniband formation.
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Submitted 10 February, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
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Tunable Fermi surface topology and Lifshitz transition in bilayer graphene
Authors:
Anastasia Varlet,
Marcin Mucha-Kruczyński,
Dominik Bischoff,
Pauline Simonet,
Takashi Taniguchi,
Kenji Watanabe,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin
Abstract:
Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of the…
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Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.
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Submitted 12 August, 2015;
originally announced August 2015.
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Infrared absorption of closely-aligned heterostructures of monolayer and bilayer graphene with hexagonal boron nitride
Authors:
D. S. L. Abergel,
M. Mucha-Kruczynski
Abstract:
We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely-aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We suggest that a study of the absorption spectra as a function of the doping for almost completely full first miniband is necessary to extract meaningful informa…
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We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely-aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We suggest that a study of the absorption spectra as a function of the doping for almost completely full first miniband is necessary to extract meaningful information about the moire characteristics from optical absorption measurements and to distinguish between various theoretical proposals for the physically realistic interaction. Also, for bilayer graphene, the ability to compare spectra for the opposite signs of electric-field-induced interlayer asymmetry might provide additional information about the moire parameters.
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Submitted 4 September, 2015; v1 submitted 14 July, 2015;
originally announced July 2015.
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Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures
Authors:
J. R. Wallbank,
M. Mucha-Kruczynski,
Xi Chen,
V. I. Fal'ko
Abstract:
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moiré superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly.
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moiré superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly.
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Submitted 5 November, 2014;
originally announced November 2014.
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Strain-induced modifications of transport in gated graphene nanoribbons
Authors:
Diana A. Cosma,
Marcin Mucha-Kruczynski,
Henning Schomerus,
Vladimir I. Fal'ko
Abstract:
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can r…
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We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudo-magnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which either originate from the coupling into Fabry-Perot states that extend through the system, or from the formation of states that are localized near the contacts, where the pseudo-magnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.
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Submitted 23 September, 2014;
originally announced September 2014.
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Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene
Authors:
Anastasia Varlet,
Dominik Bischoff,
Pauline Simonet,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin,
Marcin Mucha-Kruczynski,
Vladimir I. Fal'ko
Abstract:
Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-e…
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Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-energy electron dispersion can be tuned using the interplay between trigonal warping and a band gap opened by a transverse electric field. Here, we drive the Lifshitz transition to experimentally controllable carrier densities by applying large transverse electric fields through a h-BN-encapsulated bilayer graphene structure, and detect it by measuring the degeneracies of Landau levels. These degeneracies are revealed by filling factor -3 and -6 quantum Hall effect states of holes at low magnetic fields reflecting the existence of three maxima on the top of the valence band dispersion. At high magnetic fields all integer quantum Hall states are observed, indicating that deeper in the valence band the constant energy contours are singly-connected. The fact that we observe ferromagnetic quantum Hall states at odd-integer filling factors testifies to the high quality of our sample, and this enables us to identify several phase transitions between correlated quantum Hall states at intermediate magnetic fields, in agreement with the calculated evolution of the Landau level spectrum.
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Submitted 30 September, 2014; v1 submitted 13 March, 2014;
originally announced March 2014.
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Dirac edges of fractal magnetic minibands in graphene with hexagonal moire superlattices
Authors:
Xi Chen,
J. R. Wallbank,
A. A. Patel,
M. Mucha-Kruczynski,
E. McCann,
V. I. Fal'ko
Abstract:
We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pφ_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectru…
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We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pφ_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectrum, and show that these minibands have topological insulator properties. Using the additional $q$-fold degeneracy of magnetic minibands at B_{p/q}, we trace the hierarchy of the gaps to their manifestation in the form of incompressible states upon variation of the carrier density and magnetic field.
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Submitted 13 January, 2014; v1 submitted 31 October, 2013;
originally announced October 2013.
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Infrared absorption by graphene-hBN heterostructures
Authors:
D. S. L. Abergel,
J. R. Wallbank,
Xi Chen,
M. Mucha-Kruczyński,
Vladimir I. Fal'ko
Abstract:
We propose a theory of optical absorption in monolayer graphene-hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moiré superlattice potential for the graphene electrons which modifies the selection rules for absorption of incoming photons in the infrared to visible frequency range. The details of the absorption spectrum mod…
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We propose a theory of optical absorption in monolayer graphene-hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moiré superlattice potential for the graphene electrons which modifies the selection rules for absorption of incoming photons in the infrared to visible frequency range. The details of the absorption spectrum modification depend on the relative strength of the various symmetry-allowed couplings between the graphene electrons and the hBN, and the resulting nature of the reconstructed band structure.
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Submitted 9 December, 2013; v1 submitted 9 September, 2013;
originally announced September 2013.
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Moiré minibands in graphene heterostructures with almost commensurate sqrt3 x sqrt3 hexagonal crystals
Authors:
J. R. Wallbank,
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
We present a phenomenological theory of the low energy moiré minibands of Dirac electrons in graphene placed on an almost commensurate hexagonal underlay with a unit cell pproximately three times larger than that of graphene.A slight incommensurability results in a periodically modulated intervalley scattering for electrons in graphene. In contrast to the perfectly commensurate Kekulé distortion o…
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We present a phenomenological theory of the low energy moiré minibands of Dirac electrons in graphene placed on an almost commensurate hexagonal underlay with a unit cell pproximately three times larger than that of graphene.A slight incommensurability results in a periodically modulated intervalley scattering for electrons in graphene. In contrast to the perfectly commensurate Kekulé distortion of graphene, such supperlattice perturbation leaves the zero energy Dirac cones intact, but is able to open a band gap at the edge of the first moiré subbband, asymmetrically in the conduction and valence bands.
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Submitted 18 June, 2013;
originally announced June 2013.
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Heterostructure bilayer graphene-hBN: Interplay between misalignment, interlayer asymmetry, and trigonal warping
Authors:
M. Mucha-Kruczynski,
J. Wallbank,
V. I. Fal'ko
Abstract:
We study the superlattice minibands produced by the interplay between moiré pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moiré miniband features in BLG, where they are affected by the interlayer asymmetry of BLG-hBN heterostructure and trigonal warping characteristic for electrons in Bernal-stacke…
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We study the superlattice minibands produced by the interplay between moiré pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moiré miniband features in BLG, where they are affected by the interlayer asymmetry of BLG-hBN heterostructure and trigonal warping characteristic for electrons in Bernal-stacked bilayers with those found in monolayer graphene.
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Submitted 22 August, 2013; v1 submitted 5 April, 2013;
originally announced April 2013.
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Transport signatures of pseudo-magnetic Landau levels in strained graphene ribbons
Authors:
Diana A. Gradinar,
Marcin Mucha-Kruczyński,
Henning Schomerus,
Vladimir I. Fal'ko
Abstract:
In inhomogeneously strained graphene, low-energy electrons experience a valley-antisymmetric pseudo-magnetic field which leads to the formation of localized states at the edge between the valence and conduction bands, understood in terms of peculiar n=0 pseudo-magnetic Landau levels. Here we show that such states can manifest themselves as an isolated quadruplet of low-energy conductance resonance…
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In inhomogeneously strained graphene, low-energy electrons experience a valley-antisymmetric pseudo-magnetic field which leads to the formation of localized states at the edge between the valence and conduction bands, understood in terms of peculiar n=0 pseudo-magnetic Landau levels. Here we show that such states can manifest themselves as an isolated quadruplet of low-energy conductance resonances in a suspended stretched graphene ribbon, where clamping by the metallic contacts results in a strong inhomogeneity of strain near the ribbon ends.
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Submitted 13 March, 2013;
originally announced March 2013.
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Cloning of Dirac fermions in graphene superlattices
Authors:
L. A. Ponomarenko,
R. V. Gorbachev,
G. L. Yu,
D. C. Elias,
R. Jalil,
A. A. Patel,
A. Mishchenko,
A. S. Mayorov,
C. R. Woods,
J. R. Wallbank,
M. Mucha-Kruczynski,
B. A. Piot,
M. Potemski,
I. V. Grigorieva,
K. S. Novoselov,
F. Guinea,
V. I. Fal'ko,
A. K. Geim
Abstract:
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron o…
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Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.
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Submitted 9 May, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Generic Miniband Structure of Graphene on a Hexagonal Substrate
Authors:
J. R. Wallbank,
A. A. Patel,
M. Mucha-Kruczynski,
A. K. Geim,
V. I. Fal'ko
Abstract:
Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfac…
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Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.
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Submitted 2 May, 2013; v1 submitted 20 November, 2012;
originally announced November 2012.
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Pseudo-magnetic field distribution and pseudo-Landau levels in suspended graphene flakes
Authors:
M. Mucha-Kruczynski,
V. I. Fal'ko
Abstract:
Combining the tight-binding approximation and linear elasticity theory for a planar membrane, we investigate stretching of a graphene flake assuming that two opposite edges of the sample are clamped by the contacts. We show that, depending on the aspect ratio of the flake and its orientation, gapped states may form in the membrane in the vicinity of the contacts. This gap in the pre-contact region…
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Combining the tight-binding approximation and linear elasticity theory for a planar membrane, we investigate stretching of a graphene flake assuming that two opposite edges of the sample are clamped by the contacts. We show that, depending on the aspect ratio of the flake and its orientation, gapped states may form in the membrane in the vicinity of the contacts. This gap in the pre-contact region should be biggest for the armchair orientation of the flake and width to length ratio of around 1.
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Submitted 7 July, 2012;
originally announced July 2012.
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Landau levels in deformed bilayer graphene at low magnetic fields
Authors:
M. Mucha-Kruczynski,
I. L. Aleiner,
V. I. Fal'ko
Abstract:
We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively…
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We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ff=+-4 being the most stable in the quantum Hall effect measurement, instead of ff=+-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ff=+-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.
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Submitted 15 September, 2011;
originally announced September 2011.
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Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
Authors:
A. S. Mayorov,
D. C. Elias,
M. Mucha-Kruczynski,
R. V. Gorbachev,
T. Tudorovskiy,
A. Zhukov,
S. V. Morozov,
M. I. Katsnelson,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov
Abstract:
The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples a…
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The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples allowed us to observe strong spectrum reconstructions and electron topological transitions that can be attributed to a nematic phase transition and a decrease in rotational symmetry. These results are especially surprising because no interaction effects have been observed so far in bilayer graphene in the absence of an applied magnetic field.
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Submitted 8 August, 2011;
originally announced August 2011.
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Strained bilayer graphene: Band structure topology and Landau level spectrum
Authors:
Marcin Mucha-Kruczynski,
Igor L. Aleiner,
Vladimir I. Fal'ko
Abstract:
We show that topology of the low-energy band structure in bilayer graphene critically depends on mechanical deformations of the crystal which may easily develop in suspended graphene flakes. We describe the Lifshitz transition that takes place in strained bilayers upon splitting the parabollic bands at intermediate energies into several Dirac cones at the energy scale of few meV. Then, we show how…
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We show that topology of the low-energy band structure in bilayer graphene critically depends on mechanical deformations of the crystal which may easily develop in suspended graphene flakes. We describe the Lifshitz transition that takes place in strained bilayers upon splitting the parabollic bands at intermediate energies into several Dirac cones at the energy scale of few meV. Then, we show how this affects the electron Landau level spectra and the quantum Hall effect.
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Submitted 18 July, 2011; v1 submitted 26 April, 2011;
originally announced April 2011.
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Spectral features due to inter-Landau-level transitions in the Raman spectrum of bilayer graphene
Authors:
M. Mucha-Kruczynski,
O. Kashuba,
V. I. Fal'ko
Abstract:
We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with the four-band tight-binding model, we derive an effective scattering amplitude that can be incorporated into the commonly used two-band approximation. Due to the influence of the high-energy bands, this effective scatteri…
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We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with the four-band tight-binding model, we derive an effective scattering amplitude that can be incorporated into the commonly used two-band approximation. Due to the influence of the high-energy bands, this effective scattering amplitude is different from the contact interaction amplitude obtained within the two-band model alone. We then calculate the spectral density of the inelastic light scattering accompanied by the excitation of electron-hole pairs in bilayer graphene. In the absence of a magnetic field, due to the parabolic dispersion of the low-energy bands in a bilayer crystal, this contribution is constant and in doped structures has a threshold at twice the Fermi energy. In an external magnetic field, the dominant Raman-active modes are the n_{-} to n_{+} inter-Landau-level transitions with crossed polarisation of in/out photons. We estimate the quantum efficiency of a single n_{-} to n_{+} transition in the magnetic field of 10T as I_{n_{-} to n_{+}}~10^{-12}.
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Submitted 16 August, 2010; v1 submitted 19 January, 2010;
originally announced January 2010.
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Influence of interlayer asymmetry on magneto-spectroscopy of bilayer graphene
Authors:
M. Mucha-Kruczynski,
E. McCann,
V. I. Fal'ko
Abstract:
We present a self-consistent calculation of the interlayer asymmetry in bilayer graphene caused by an applied electric field in magnetic fields. We show how this asymmetry influences the Landau level spectrum in bilayer graphene and the observable inter-Landau level transitions when they are studied as a function of high magnetic field at fixed filling factor as measured experimentally by E.A. H…
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We present a self-consistent calculation of the interlayer asymmetry in bilayer graphene caused by an applied electric field in magnetic fields. We show how this asymmetry influences the Landau level spectrum in bilayer graphene and the observable inter-Landau level transitions when they are studied as a function of high magnetic field at fixed filling factor as measured experimentally by E.A. Henriksen et al., Phys. Rev. Lett. 100 (2008), 087403. We also analyze the magneto-optical spectra of bilayer flakes in the photon-energy range corresponding to transitions between degenerate and split bands of bilayers.
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Submitted 9 January, 2009;
originally announced January 2009.
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Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
Authors:
M. Mucha-Kruczynski,
O. Tsyplyatyev,
A. Grishin,
E. McCann,
Vladimir I. Fal'ko,
A. Bostwick,
E. Rotenberg
Abstract:
We show theoretically how constant-energy maps of the angle-resolved photoemission intensity can be used to test wave function symmetry in graphene. For monolayer graphene, we demonstrate that the observed anisotropy of ARPES spectra is a manifestation of what has been recently branded as electronic chirality. For bilayer graphene, we show that the anisotropy of the constant-energy maps may be u…
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We show theoretically how constant-energy maps of the angle-resolved photoemission intensity can be used to test wave function symmetry in graphene. For monolayer graphene, we demonstrate that the observed anisotropy of ARPES spectra is a manifestation of what has been recently branded as electronic chirality. For bilayer graphene, we show that the anisotropy of the constant-energy maps may be used to extract information about the magnitude and sign of interlayer coupling parameters and about symmetry breaking inflicted on a bilayer by the underlying substrate.
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Submitted 29 November, 2007; v1 submitted 7 November, 2007;
originally announced November 2007.
