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Optical switching beyond a million cycles of low-loss phase change material Sb$_2$Se$_3$
Authors:
Daniel Lawson,
Sophie Blundell,
Martin Ebert,
Otto L. Muskens,
Ioannis Zeimpekis
Abstract:
The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applicati…
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The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb$_2$Se$_3$ of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb$_2$Se$_3$ for a range of film thicknesses relevant for optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 10$^7$ cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.
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Submitted 16 October, 2023;
originally announced October 2023.
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Back-end and Flexible Substrate Compatible Analog Ferroelectric Field Effect Transistors for Accurate Online Training in Deep Neural Network Accelerators
Authors:
Sayani Majumdar,
Ioannis Zeimpekis
Abstract:
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities such as nonlinearity, asymmetry, limited bit precision and dynamic weight update range within constrained power budget. Here, we report a three-terminal Ferroe…
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Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities such as nonlinearity, asymmetry, limited bit precision and dynamic weight update range within constrained power budget. Here, we report a three-terminal Ferroelectric-Field-Effect-Transistor based on low thermal budget processes that can work efficiently as an analog synaptic transistor. Ferroelectric polymer P(VDF-TrFE) as the gate insulator and 2D semiconductor MoS2 as the n-type semiconducting channel material makes them suitable for flexible and wearable substrate integration. The analog conductance of the FeFETs can be precisely manipulated by employing a ferroelectric-dielectric layer as the gate stack. The ferroelectric-only devices show excellent performance as digital non-volatile memory operating at +-5V while the hybrid ferroelectric-dielectric devices show quasi-continuous resistive switching resulting from gradual ferroelectric domain rotation, important for their multibit operation. Analog conductance states of the hybrid devices allow linearity and symmetry of weight updates and produce a dynamic conductance range of 104 with >16 reproducible conducting states. Network training experiments of these FeFETs show >96% classification accuracy with MNIST handwritten datasets highlighting their potential for implementation in scaled DNN architectures.
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Submitted 23 February, 2023;
originally announced February 2023.
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Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications
Authors:
Nikolaos Aspiotis,
Katrina Morgan,
Benjamin März,
Knut Müller-Caspary,
Martin Ebert,
Chung-Che Huang,
Daniel W. Hewak,
Sayani Majumdar,
Ioannis Zeimpekis
Abstract:
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptak…
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This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
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Submitted 19 March, 2022;
originally announced March 2022.
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Low energy switching of phase change materials using a 2D thermal boundary layer
Authors:
Jing Ning,
Yunzheng Wang,
Ting Yu Teo,
Chung-Che Huang,
Ioannis Zeimpekis,
Katrina Morgan,
Siew Lang Teo,
Daniel W. Hewak,
Michel Bosman,
Robert E. Simpson
Abstract:
The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM e…
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The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS2 or WS2, between the silica or silicon and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS2 and WS2 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ~100 nm layer of SiO2. The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interfaces. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide, thus this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices.
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Submitted 9 February, 2022;
originally announced February 2022.
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Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3
Authors:
Daniel Lawson,
Daniel W. Hewak,
Otto L. Muskens,
Ioannis Zeimpekis
Abstract:
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we investigate the dynamical response of these materials from nanoseconds to milliseconds under optical pumping conditions. We apply bichromatic pump-probe transient reflec…
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The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we investigate the dynamical response of these materials from nanoseconds to milliseconds under optical pumping conditions. We apply bichromatic pump-probe transient reflectance spectroscopy which is a widely used method to study the optical performance of optical phase change materials. Amorphous regions of several hundreds of nanometers in diameter are induced by pulsed excitation of the material using a wavelength of 488 nm above the absorption edge, while the transient reflectance is probed using a continuous wave 980 nm laser, well below the absorption edge of the material. We find vitrification dynamics in the nanosecond range and observe crystallization on millisecond time scales. These results show a large five-orders of magnitude difference in time scales between crystallization and vitrification dynamics in this material. The insights provided in this work are fundamental for the optimisation of the material family and its employment in photonic applications.
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Submitted 25 November, 2021;
originally announced November 2021.
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Enhanced Meta-Displays Using Advanced Phase-Change Materials
Authors:
Omid Hemmatyar,
Sajjad Abdollahramezani,
Ioannis Zeimpekis,
Sergey Lepeshov,
Alex Krasnok,
Asir Intisar Khan,
Kathryn M. Neilson,
Christian Teichrib,
Tyler Brown,
Eric Pop,
Daniel W. Hewak,
Matthias Wuttig,
Andrea Alu,
Otto L. Muskens,
Ali Adibi
Abstract:
Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change…
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Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change materials (PCMs), with significant contrast of their optical properties between their amorphous and crystalline states, have demonstrated promising potentials in reconfigurable nanophotonics. Herein, we leverage tunable all-dielectric reflective metasurfaces made of newly emerged classes of low-loss optical PCMs, i.e., antimony trisulphide (Sb$_2$S$_3$) and antimony triselenide (Sb$_2$Se$_3$), with superb characteristics to realize switchable, high-saturation, high-efficiency and high-resolution dynamic meta-pixels. Exploiting polarization-sensitive building blocks, the presented meta-pixel can generate two different colors when illuminated by either one of two orthogonally polarized incident beams. Such degrees of freedom (i.e., material phase and polarization state) enable a single reconfigurable metasurface with fixed geometrical parameters to generate four distinct wide-gamut colors. We experimentally demonstrate, for the first time, an electrically-driven micro-scale display through the integration of phase-change metasurfaces with an on-chip heater formed by transparent conductive oxide. Our experimental findings enable a versatile platform suitable for a wide range of applications, including tunable full-color printing, enhanced dynamic displays, information encryption, and anti-counterfeiting.
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Submitted 19 July, 2021;
originally announced July 2021.
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Towards low loss non-volatile phase change materials in mid index waveguides
Authors:
Joaquin Faneca,
Ioannis Zeimpekis,
S. T. Ilie,
Thalía Domínguez Bucio,
Katarzyna Grabska,
Daniel W. Hewak,
Frederic Y. Gardes
Abstract:
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic component…
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Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic components employ phase change materials such as GST and GSST, which had their origin in electronic memory. However, in the optical domain, these compounds introduce significant losses potentially preventing a large number of applications. Here, we evaluate the use of two newly introduced low loss phase change materials, Sb2S3 and Sb2Se3, on a silicon nitride photonic platform. We focus the study on Mach-Zehnder interferometers that operate at the O and C bands to demonstrate the performance of the system. Our measurements show an insertion loss below 0.04 dB/um for Sb2S3 and lower than 0.09 dB/um for Sb2Se3 cladded devices for both amorphous and crystalline phases. The effective refractive index contrast for Sb2S3 on SiNx was measured to be 0.05 at 1310 nm and 0.02 at 1550 nm, whereas for Sb2Se3, it was 0.03 at 1310 nm and 0.05 at 1550 nm highlighting the performance of the integrated device.
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Submitted 26 January, 2021;
originally announced January 2021.
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Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material
Authors:
Matthew Delaney,
Ioannis Zeimpekis,
Han Du,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Daniel W. Hewak,
Otto L. Muskens
Abstract:
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the…
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Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$π$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
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Submitted 10 January, 2021;
originally announced January 2021.
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Deep learning enabled design of complex transmission matrices for universal optical components
Authors:
Nicholas J. Dinsdale,
Peter R. Wiecha,
Matthew Delaney,
Jamie Reynolds,
Martin Ebert,
Ioannis Zeimpekis,
David J. Thomson,
Graham T. Reed,
Philippe Lalanne,
Kevin Vynck,
Otto L. Muskens
Abstract:
Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate…
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Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate, restricting the scalability of this approach. Here, we consider an ultracompact platform for low-loss programmable elements using the complex transmission matrix of a multi-port multimode waveguide. We propose a deep learning inverse network approach to design arbitrary transmission matrices using patterns of weakly scattering perturbations. The demonstrated technique allows control over both the intensity and phase in a multiport device at a four orders reduced device footprint compared to conventional technologies, thus opening the door for large-scale integrated universal networks.
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Submitted 8 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides
Authors:
Lifeng Chen,
Katrina A. Morgan,
Ghada A. Alzaidy,
Chung-Che Huang,
Ying-Lung Daniel Ho,
Mike P. C. Taverne,
Xu Zheng,
Zhong Ren,
Zhuo Feng,
Ioannis Zeimpekis,
Daniel W. Hewak,
John G. Rarity
Abstract:
Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to $n_{high}/n_{low} \sim 1.9$. We confirm this threshold by measuring a complete photonic bandgap in the infr…
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Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to $n_{high}/n_{low} \sim 1.9$. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn--S--O $(n\sim1.9)$ and Ge--Sb--S--O $(n\sim2)$ inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications.
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Submitted 1 May, 2019;
originally announced May 2019.
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Improved surface quality of anisotropically etched silicon {111} planes for mm-scale integrated optics
Authors:
J. P. Cotter,
I. Zeimpekis,
M Kraft,
E A Hinds
Abstract:
We have studied the surface quality of millimeter-scale optical mirrors produced by etching CZ and FZ silicon wafers in potassium hydroxide to expose the $\{111\}$ planes. We find that the FZ surfaces have four times lower noise power at spatial frequencies up to $500\, {mm}^{-1}$. We conclude that mirrors made using FZ wafers have higher optical quality.
We have studied the surface quality of millimeter-scale optical mirrors produced by etching CZ and FZ silicon wafers in potassium hydroxide to expose the $\{111\}$ planes. We find that the FZ surfaces have four times lower noise power at spatial frequencies up to $500\, {mm}^{-1}$. We conclude that mirrors made using FZ wafers have higher optical quality.
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Submitted 15 July, 2013;
originally announced July 2013.
