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Pressure-dependent semiconductor-metal transition and elastic, electronic, optical, and thermophysical properties of SnS binary chalcogenide
Authors:
Ayesha Tasnim,
Md. Mahamudujjaman,
Md. Asif Afzal,
R. S. Islam,
S. H. Naqib
Abstract:
Density functional theory based study of the pressure dependent physical properties of binary SnS compound has been carried out. The computed elastic constants reveal that SnS is mechanically stable and brittle under ambient conditions. With increasing pressure, the compound becomes ductile. The Poisson's ratio also indicates brittle-ductile transition with increasing pressure. The hardness of SnS…
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Density functional theory based study of the pressure dependent physical properties of binary SnS compound has been carried out. The computed elastic constants reveal that SnS is mechanically stable and brittle under ambient conditions. With increasing pressure, the compound becomes ductile. The Poisson's ratio also indicates brittle-ductile transition with increasing pressure. The hardness of SnS increases significantly with pressure. The compound possesses elastic anisotropy. The ground state electronic band structure is semiconducting with a small band gap which becomes metallic under pressure. The band becomes more and more dispersive with the increase in pressure while the electronic correlations decrease as pressure is raised. Both the Debye temperature and the phonon thermal conductivity of SnS increase sharply with pressure. The Melting temperature of the compound is low. Mixed bonding characteristics are found with ionic and covalent contributions. SnS is a good absorber of ultraviolet light. The reflectivity of the material increases with the increase in pressure. The reflectivity is nonselective over a wide spectral range. The low energy refractive index is high. All these optical characteristics are useful for prospective optoelectronic device applications. The optical anisotropy is low.
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Submitted 28 October, 2022;
originally announced October 2022.
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Comparative analysis of physical properties of some binary transition metal carbides XC (X = Nb, Ta, Ti): Insights from a comprehensive ab-initio study
Authors:
Razu Ahmed,
Md. Mahamudujjaman,
Md. Asif Afzal,
Md. Sajidul Islam,
R. S. Islam,
S. H. Naqib
Abstract:
Binary metallic carbides belong to a technologically prominent class of materials. We have explored the structural, mechanical, electronic, optical, and some thermophysical properties of XC (X = Nb, Ta, Ti) binary metallic carbides in details employing first-principles method. Some of the results obtained are novel. A comparative analysis has been made.
Binary metallic carbides belong to a technologically prominent class of materials. We have explored the structural, mechanical, electronic, optical, and some thermophysical properties of XC (X = Nb, Ta, Ti) binary metallic carbides in details employing first-principles method. Some of the results obtained are novel. A comparative analysis has been made.
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Submitted 23 September, 2022;
originally announced September 2022.
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A comprehensive DFT based insights into the physical properties of tetragonal Mo5PB2
Authors:
M. I. Naher,
M. A. Afzal,
S. H. Naqib
Abstract:
Tetragonal Mo5PB2 compound, a recently discovered superconductor, belongs to technologically important class of materials. It is quite surprising to note that a large number of physical properties of Mo5PB2, including elastic properties and their anisotropy, acoustic behavior, electronic (charge density distribution, electron density difference), thermo-physical, bonding characteristics, and optic…
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Tetragonal Mo5PB2 compound, a recently discovered superconductor, belongs to technologically important class of materials. It is quite surprising to note that a large number of physical properties of Mo5PB2, including elastic properties and their anisotropy, acoustic behavior, electronic (charge density distribution, electron density difference), thermo-physical, bonding characteristics, and optical properties have not been carried out at all. In the present work we have explored all these properties in details for the first time with density functional theory based first-principles method. Mo5PB2 is found to be a mechanically stable, elastically anisotropic compound with ductile character. Moreover, the chemical bonding is interpreted by calculating the electronic energy density of states, electron density distribution, elastic properties and Mulliken bond population analysis. Mo5PB2 has a combination of mainly ionic, metallic, and some covalent bonding characteristics. The compound possesses high level of machinability. The band structure along with a large electronic density of states at the Fermi level reveals metallic character. Calculated values of different thermal parameters of Mo5PB2 are closely related to the elastic properties. The energy dependent optical parameters show close assent to the underlying electronic band structure. The optical absorption and reflectivity spectra and the low energy index of refraction of Mo5PB2 show that the compound holds promise to be used in optoelectronic device sector. Unlike the notable anisotropy found in elastic, mechanical properties and minimum thermal conductivity, the optical parameters are found to be almost isotropic with respect to the polarization direction of the incident electric field.
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Submitted 11 May, 2021;
originally announced May 2021.
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Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations
Authors:
Md. Mahamudujjaman,
Md. Asif Afzal,
R. S. Islam,
S. H. Naqib
Abstract:
Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via ab-initio technique in this study. Elastic anisotropy indices, atomic bonding character, optoelectronic properties and thermo-physical parameters including melting t…
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Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via ab-initio technique in this study. Elastic anisotropy indices, atomic bonding character, optoelectronic properties and thermo-physical parameters including melting temperature and minimum phonon thermal conductivity are investigated for the first time. All the TMDCs under investigation possess significant elastic anisotropy and layered structural features. ZrX2 (X = S, Se, Te) compounds are fairly machinable, and ZrS2 and ZrSe2 are moderately hard. ZrTe2, on the other hand, is significantly softer. Both covalent and ionic bondings contribute in the crystals. Electronic band structure calculations display semiconducting behavior for ZrS2 and ZrSe2 and metallic behavior for ZrTe2. Energy dependent optoelectronic parameters exhibit good correspondence with the underlying electronic energy density of states features. ZrX2 (X = S, Se, Te) compounds absorb ultraviolet radiation effectively. The reflectivity spectrum, R(w), remains over 50% in the energy range from 0 eV to 20 eV for ZrTe2. Therefore, this TMDC has wide band and nonselective high reflectivity and can be used as an efficient reflector to reduce solar heating. Debye temperature, melting point and minimum phonon thermal conductivity of the compounds under study are low and show excellent correspondence with each other and also with the elastic and bonding characteristics.
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Submitted 24 February, 2021;
originally announced February 2021.
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A DFT based first-principles investigation of the physical properties of Bi2Te2Se topological insulator
Authors:
Md. Asif Afzal,
S. H. Naqib
Abstract:
A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator are gapless and are protected by the time reversal symmetry. Such systems are promising for variety of optoelectronic, superconducting, thermoelectric and quantu…
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A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator are gapless and are protected by the time reversal symmetry. Such systems are promising for variety of optoelectronic, superconducting, thermoelectric and quantum computation related applications. We have studied elastic, mechanical, electronic, optical properties, bonding character and the electronic charge density distribution of ternary Bi2Te2Se topological insulator. The compound under study is mechanically stable and elastically anisotropic. The electronic band structure calculations reveal high degree of anisotropy in the energy dispersion. Electronic effective mass is high in the c-direction compared to that in the ab-plane. The optical constants show moderate level of variation with respect to the polarization of the electric field of the incident radiation. The optical spectra are consistent with the electronic band structure and electronic density of states features. Both electronic band structure and optical constants show clear indications of a direct band gap of 0.610 eV for Bi2Te2Se. It is also found that Bi2Te2Se possesses high refractive index at low photon energies in the infrared and visible region. It has low reflectivity in the ultraviolet region. Bi2Te2Se absorbs photons strongly in the ultraviolet energies. All these features make Bi2Te2Se suitable for diverse class of optoelectronic device applications.
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Submitted 27 May, 2020;
originally announced May 2020.
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High-Throughput Computational Studies in Catalysis and Materials Research, and their Impact on Rational Design
Authors:
Mohammad Atif Faiz Afzal,
Johannes Hachmann
Abstract:
In the 21st century, many technology fields have become reliant on advancements in process automation. We have seen dramatic growth in areas and industries that have successfully implemented a high level of automation. In drug discovery, for example, it has alleviated an otherwise extremely complex and tedious process and has resulted in the development of several new drugs. Over the last decade,…
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In the 21st century, many technology fields have become reliant on advancements in process automation. We have seen dramatic growth in areas and industries that have successfully implemented a high level of automation. In drug discovery, for example, it has alleviated an otherwise extremely complex and tedious process and has resulted in the development of several new drugs. Over the last decade, these automation techniques have begun being adapted in the chemical and materials community as well with the goal of exploring chemical space and pursuing the discovery and design of novel compounds for various applications. The impact of new materials on industrial and economic development has been stimulating tremendous research efforts by the materials community, and embracing automation as well as tools from computational and data science have led to acceleration and streamlining of the discovery process. In particular, virtual high-throughput screening (HTPS) is now becoming a mainstream technique to search for materials with properties that are tailored for specific applications. Its efficiency combined with the increasing availability of open-source codes and large computational resources makes it a powerful and attractive tool in materials research. Herein, we will review a selection of recent, high-profile HTPS projects for new materials and catalysts. In the case of catalysts, we focus on the HTPS studies for oxygen reduction reaction, oxygen evolution reaction, hydrogen evolution reaction, and carbon dioxide reduction reaction. Whereas, for other materials applications, we emphasize on the HTPS studies for photovoltaics, gas separation, high-refractive-index materials, and OLEDs.
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Submitted 10 February, 2019;
originally announced February 2019.
