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A comparative study of the structural, elastic, thermophysical, and optoelectronic properties of CaZn$_2$X$_2$ (X = N, P, As) semiconductors via ab-initio approach
Authors:
Md. Sajidul Islam,
Razu Ahmed,
Md. Mahamudujjaman,
R. S. Islam,
S. H. Naqib
Abstract:
We present a detailed density functional theory based calculations of the structural, elastic, lattice dynamical, thermophysical, and optoelectronic properties of ternary semiconductors CaZn$_2$X$_2$ (X = N, P, As) in this paper. The obtained lattice parameters are in excellent agreement with the experimental values and other theoretical findings. These elastic constants satisfy the mechanical sta…
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We present a detailed density functional theory based calculations of the structural, elastic, lattice dynamical, thermophysical, and optoelectronic properties of ternary semiconductors CaZn$_2$X$_2$ (X = N, P, As) in this paper. The obtained lattice parameters are in excellent agreement with the experimental values and other theoretical findings. These elastic constants satisfy the mechanical stability criteria. Moreover, many thermophysical parameters of these compounds are estimated, including the Debye temperature, average sound velocity, melting temperature, heat capacity, lattice thermal conductivity, etc. The comprehensive analysis of the elastic constants and moduli show that CaZn$_2$X$_2$ compounds possess reasonably good machinability, relatively high Vickers hardness and relatively low Debye temperature. The phonon dispersion curves and phonon density of states are investigated for the first time for the compounds CaZn$_2$P$_2$ and CaZn$_2$As$_2$. It is observed from the phonon dispersion curves that the bulk CaZn$_2$X$_2$ (X = N, P, As) compounds are dynamically stable. Electronic properties have been studied through the band structures and electronic energy density of states. The electronic band structures show that CaZn$_2$N$_2$ and CaZn$_2$As$_2$ possess direct band gaps while the compound CaZn$_2$P$_2$ show indirect band gap. The bonding characters of CaZn$_2$X$_2$ (X = N, P, As) compounds are investigated. Energy dependent optical parameters exhibit good correspondence with the electronic energy density of states features. We have thoroughly discussed the reflectivity, absorption coefficient, refractive index, dielectric function, optical conductivity and loss function of these semiconductors. The optical absorption, reflectivity spectra and the refractive index of CaZn$_2$X$_2$ (X = N, P, As) show that the compounds hold promise to be used in optoelectronic devices.
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Submitted 31 October, 2022;
originally announced October 2022.
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Pressure-dependent semiconductor-metal transition and elastic, electronic, optical, and thermophysical properties of SnS binary chalcogenide
Authors:
Ayesha Tasnim,
Md. Mahamudujjaman,
Md. Asif Afzal,
R. S. Islam,
S. H. Naqib
Abstract:
Density functional theory based study of the pressure dependent physical properties of binary SnS compound has been carried out. The computed elastic constants reveal that SnS is mechanically stable and brittle under ambient conditions. With increasing pressure, the compound becomes ductile. The Poisson's ratio also indicates brittle-ductile transition with increasing pressure. The hardness of SnS…
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Density functional theory based study of the pressure dependent physical properties of binary SnS compound has been carried out. The computed elastic constants reveal that SnS is mechanically stable and brittle under ambient conditions. With increasing pressure, the compound becomes ductile. The Poisson's ratio also indicates brittle-ductile transition with increasing pressure. The hardness of SnS increases significantly with pressure. The compound possesses elastic anisotropy. The ground state electronic band structure is semiconducting with a small band gap which becomes metallic under pressure. The band becomes more and more dispersive with the increase in pressure while the electronic correlations decrease as pressure is raised. Both the Debye temperature and the phonon thermal conductivity of SnS increase sharply with pressure. The Melting temperature of the compound is low. Mixed bonding characteristics are found with ionic and covalent contributions. SnS is a good absorber of ultraviolet light. The reflectivity of the material increases with the increase in pressure. The reflectivity is nonselective over a wide spectral range. The low energy refractive index is high. All these optical characteristics are useful for prospective optoelectronic device applications. The optical anisotropy is low.
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Submitted 28 October, 2022;
originally announced October 2022.
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Comparative analysis of physical properties of some binary transition metal carbides XC (X = Nb, Ta, Ti): Insights from a comprehensive ab-initio study
Authors:
Razu Ahmed,
Md. Mahamudujjaman,
Md. Asif Afzal,
Md. Sajidul Islam,
R. S. Islam,
S. H. Naqib
Abstract:
Binary metallic carbides belong to a technologically prominent class of materials. We have explored the structural, mechanical, electronic, optical, and some thermophysical properties of XC (X = Nb, Ta, Ti) binary metallic carbides in details employing first-principles method. Some of the results obtained are novel. A comparative analysis has been made.
Binary metallic carbides belong to a technologically prominent class of materials. We have explored the structural, mechanical, electronic, optical, and some thermophysical properties of XC (X = Nb, Ta, Ti) binary metallic carbides in details employing first-principles method. Some of the results obtained are novel. A comparative analysis has been made.
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Submitted 23 September, 2022;
originally announced September 2022.
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Ab-initio insights into the elastic, bonding, phonon, optoelectronic and thermophysical properties of SnTaS2
Authors:
M. I. Naher,
M. Mahamudujjaman,
A. Tasnim,
R. S. Islam,
S. H. Naqib
Abstract:
SnTaS2 is a recently discovered layered semimetal exhibiting type-II low transition temperature superconductivity. Except some superconductivity related parameters, most of the physical properties, namely, elastic, mechanical, bonding, phonon dispersion, acoustic, thermophysical, and optical properties of SnTaS2 are unexplored till now. In this study, we have investigated these hitherto unexplored…
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SnTaS2 is a recently discovered layered semimetal exhibiting type-II low transition temperature superconductivity. Except some superconductivity related parameters, most of the physical properties, namely, elastic, mechanical, bonding, phonon dispersion, acoustic, thermophysical, and optical properties of SnTaS2 are unexplored till now. In this study, we have investigated these hitherto unexplored properties of SnTaS2 for the first time employing density functional theory (DFT) based first-principles method. SnTaS2 is a mechanically stable, elastically anisotropic compound with strongly layered feature. The bond hardness and Vickers hardness have been calculated. The material under study is ductile, soft and highly machinable. The chemical bonding feature has mixed character with significant contribution coming from the ionic channel. Phonon dispersion curves disclose dynamical stability. Electronic band structure calculations show simple metallic character. The Fermi surface consists of both electron-like and hole-like sheets with varying degrees of dispersion. The low energy (including visible part of the spectrum) refractive index of SnTaS2 is high. The reflectivity is fairly nonselective over a wide range of photon energy and the absorption coefficient is large in the mid ultraviolet region. The Debye temperature and thermal conductivity of SnTaS2 are low. The electron-phonon coupling constant has been calculated. The compound under study possesses optical anisotropy with respect to the polarization direction of the incident electric field.
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Submitted 16 August, 2021;
originally announced August 2021.
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Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations
Authors:
Md. Mahamudujjaman,
Md. Asif Afzal,
R. S. Islam,
S. H. Naqib
Abstract:
Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via ab-initio technique in this study. Elastic anisotropy indices, atomic bonding character, optoelectronic properties and thermo-physical parameters including melting t…
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Transition metal dichalcogenides (TMDCs) belong to technologically important compounds. We have explored the structural, elastic, bonding, optoelectronic and some thermo-physical properties of ZrX2 (X = S, Se, Te) TMDCs in details via ab-initio technique in this study. Elastic anisotropy indices, atomic bonding character, optoelectronic properties and thermo-physical parameters including melting temperature and minimum phonon thermal conductivity are investigated for the first time. All the TMDCs under investigation possess significant elastic anisotropy and layered structural features. ZrX2 (X = S, Se, Te) compounds are fairly machinable, and ZrS2 and ZrSe2 are moderately hard. ZrTe2, on the other hand, is significantly softer. Both covalent and ionic bondings contribute in the crystals. Electronic band structure calculations display semiconducting behavior for ZrS2 and ZrSe2 and metallic behavior for ZrTe2. Energy dependent optoelectronic parameters exhibit good correspondence with the underlying electronic energy density of states features. ZrX2 (X = S, Se, Te) compounds absorb ultraviolet radiation effectively. The reflectivity spectrum, R(w), remains over 50% in the energy range from 0 eV to 20 eV for ZrTe2. Therefore, this TMDC has wide band and nonselective high reflectivity and can be used as an efficient reflector to reduce solar heating. Debye temperature, melting point and minimum phonon thermal conductivity of the compounds under study are low and show excellent correspondence with each other and also with the elastic and bonding characteristics.
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Submitted 24 February, 2021;
originally announced February 2021.
