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Substrate induced magnetic anisotropies and magneto-optical response in YIG nanosized epitaxial films on NdGG(111)
Authors:
B. B. Krichevtsov,
V. E. Bursian,
S. V. Gastev,
A. M. Korovin,
L. V. Lutsev,
S. M. Suturin,
K. V. Mashkov,
M. P. Volkov,
N. S. Sokolov
Abstract:
Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the stress-related anisotropy field has an opposite sign, compared to that in the YIG/GGG systems. This leads to a considerable decrease of the effective magnetization that o…
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Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the stress-related anisotropy field has an opposite sign, compared to that in the YIG/GGG systems. This leads to a considerable decrease of the effective magnetization that opens a perspective to get YIG films with perpendicular magnetization for utilizing forward volume spin waves. Longitudinal magnetooptical Kerr effect magnetometry reveals a large contribution of quadratic in magnetization terms into dielectric permittivity tensor at optical frequencies. This effect strongly increases with temperature decrease and is explained by magnetization of the interface Nd3+ ions that are exchange coupled to the Fe3+ ions.
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Submitted 12 December, 2018;
originally announced January 2019.
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Role of gallium diffusion in the formation of a magnetically dead layer at Y3Fe5O12 / Gd3Ga5O12 epitaxial interface
Authors:
S. M. Suturin,
A. M. Korovin,
V. E. Bursian,
L. V. Lutsev,
V. Bourobina,
N. L. Yakovlev,
M. Montecchi,
L. Pasquali,
V. Ukleev,
A. Vorobiev,
A. Devishvili,
N. S. Sokolov
Abstract:
We have clarified the origin of magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700°C onto gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG / GGG interface is demonstrated by means of composition depth profiling performed by X-ray photoelectron spectroscopy,…
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We have clarified the origin of magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700°C onto gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG / GGG interface is demonstrated by means of composition depth profiling performed by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and X-ray and neutron reflectometry. Our finding is in sharp contrast to the earlier expressed assumption that Gd acts as a migrant element in the YIG/GGG system. We further correlate the presence of Ga-rich transition layer with considerable quenching of ferromagnetic resonance and spin wave propagation in thin YIG films. Finally, we clarify the origin of the enigmatic low-density overlayer that is often observed in neutron and X-ray reflectometry studies of the YIG / GGG epitaxial system.
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Submitted 6 November, 2018; v1 submitted 4 November, 2018;
originally announced November 2018.
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Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y3Fe5O12 / AlOx / GaAs-heterostructures
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii,
V. E. Bursian,
A. Maziewski,
R. Gieniusz
Abstract:
We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of…
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We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ΔH. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor structures with two-dimensional electron gas (2DEG) channels in AlOx / GaAs interface governed by YIG-film spin excitations are designed. An effective influence of spin excitations on the current flowing through the GaAs 2DEG channel is observed. Light illumination results in essential changes in the FMR spectrum. It is found that an increase of the 2DEG current leads to an inverse effect, which represents essential changes in the FMR spectrum.
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Submitted 27 November, 2017;
originally announced November 2017.
