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Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne A. Y. Guilbert,
Gabriele D'Avino,
Fabiola Liscio,
Andrea Migliori,
Luca Ortolani,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Andrea Liscio,
Marco-Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.
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Submitted 11 May, 2021;
originally announced May 2021.
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Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$
Authors:
C. J. Sayers,
L. S. Farrar,
S. J. Bending,
M. Cattelan,
A. J. H. Jones,
N. A. Fox,
G. Kociok-Köhn,
K. Koshmak,
J. Laverock,
L. Pasquali,
E. Da Como
Abstract:
We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measure…
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We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.
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Submitted 11 February, 2020; v1 submitted 22 January, 2020;
originally announced January 2020.
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Freeing electrons from extrinsic and intrinsic disorder yields band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne Y. Guilbert,
Gabriele DAvino,
Fabiola Liscio,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Marco Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge c…
▽ More
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be extrinsic, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both intrinsic and extrinsic disorder to ultimately reach band-like electron transport.
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Submitted 11 September, 2019;
originally announced September 2019.
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Role of gallium diffusion in the formation of a magnetically dead layer at Y3Fe5O12 / Gd3Ga5O12 epitaxial interface
Authors:
S. M. Suturin,
A. M. Korovin,
V. E. Bursian,
L. V. Lutsev,
V. Bourobina,
N. L. Yakovlev,
M. Montecchi,
L. Pasquali,
V. Ukleev,
A. Vorobiev,
A. Devishvili,
N. S. Sokolov
Abstract:
We have clarified the origin of magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700°C onto gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG / GGG interface is demonstrated by means of composition depth profiling performed by X-ray photoelectron spectroscopy,…
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We have clarified the origin of magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700°C onto gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG / GGG interface is demonstrated by means of composition depth profiling performed by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and X-ray and neutron reflectometry. Our finding is in sharp contrast to the earlier expressed assumption that Gd acts as a migrant element in the YIG/GGG system. We further correlate the presence of Ga-rich transition layer with considerable quenching of ferromagnetic resonance and spin wave propagation in thin YIG films. Finally, we clarify the origin of the enigmatic low-density overlayer that is often observed in neutron and X-ray reflectometry studies of the YIG / GGG epitaxial system.
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Submitted 6 November, 2018; v1 submitted 4 November, 2018;
originally announced November 2018.
