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Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne A. Y. Guilbert,
Gabriele D'Avino,
Fabiola Liscio,
Andrea Migliori,
Luca Ortolani,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Andrea Liscio,
Marco-Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.
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Submitted 11 May, 2021;
originally announced May 2021.
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Freeing electrons from extrinsic and intrinsic disorder yields band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne Y. Guilbert,
Gabriele DAvino,
Fabiola Liscio,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Marco Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge c…
▽ More
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be extrinsic, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both intrinsic and extrinsic disorder to ultimately reach band-like electron transport.
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Submitted 11 September, 2019;
originally announced September 2019.
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Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs
Authors:
F. Blanchard,
D. Golde,
F. H. Su,
L. Razzari,
G. Sharma,
R. Morandotti,
T. Ozaki,
M. Reid,
M. Kira,
S. W. Koch,
F. A. Hegmann
Abstract:
The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.
The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.
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Submitted 15 November, 2010;
originally announced November 2010.
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Polarization proximity effect in isolator crystal pairs
Authors:
Yoav Linzon,
Marcello Ferrera,
Luca Razzari,
Alain Pignolet,
Roberto Morandotti
Abstract:
We experimentally studied the polarization dynamics (orientation and ellipticity) of near infrared light transmitted through magnetooptic Yttrium Iron Garnet crystal pairs using a modified balanced detection scheme. When the pair separation is in the sub-millimeter range, we observed a proximity effect in which the saturation field is reduced by up to 20%. 1D magnetostatic calculations suggest t…
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We experimentally studied the polarization dynamics (orientation and ellipticity) of near infrared light transmitted through magnetooptic Yttrium Iron Garnet crystal pairs using a modified balanced detection scheme. When the pair separation is in the sub-millimeter range, we observed a proximity effect in which the saturation field is reduced by up to 20%. 1D magnetostatic calculations suggest that the proximity effect originates from magnetostatic interactions between the dipole moments of the isolator crystals. This substantial reduction of the saturation field is potentially useful for the realization of low-power integrated magneto-optical devices.
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Submitted 19 September, 2008;
originally announced September 2008.
