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Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides
Authors:
Mustafa Neset Cinar,
Aleandro Antidormi,
Viet-Hung Nguyen,
Alessandro Kovtun,
Samuel Lara Avila,
Andrea Liscio,
Jean-Christophe Charlier,
Stephan Roche,
Haldun Sevincli
Abstract:
In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeop…
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In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hopping. These predictions are favourably compared with experimental data and open a road towards the optimization of graphene-based composites with improved electrical conduction.
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Submitted 31 January, 2022;
originally announced January 2022.
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Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne A. Y. Guilbert,
Gabriele D'Avino,
Fabiola Liscio,
Andrea Migliori,
Luca Ortolani,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Andrea Liscio,
Marco-Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.
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Submitted 11 May, 2021;
originally announced May 2021.
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Multiscale charge transport in van der Waals thin films: reduced graphene oxide as case study
Authors:
Alessandro Kovtun,
Andrea Candini,
Anna Vianelli,
Alex Boschi,
Simone Dell Elce,
Marco Gobbi,
Kyung Ho Kim,
Samuel Lara Avila,
Paolo Samori,
Marco Affronte,
Andrea Liscio,
Vincenzo Palermo
Abstract:
Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e. vdW heterostructures) have been the subject of intensive wo…
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Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e. vdW heterostructures) have been the subject of intensive works, little is known about how charges travel through multilayered, more disordered networks. Here we report a comprehensive study of a prototypical system given by networks of randomly stacked reduced graphene oxide 2D nanosheets, whose chemical and geometrical properties can be controlled independently, permitting to explore percolated networks ranging from a single nanosheet to some billions with room temperature resistivity spanning from 10-5 to 10-1 ohm m. We systematically observe a clear transition between two different regimes at a critical temperature T*: Efros-Shklovskii variable range hopping (ESVRH) below T* and power law (PL) behavior above. Firstly, we demonstrate that the two regimes are strongly correlated with each other, both depending on the charge localization length xi, calculated by ES-VRH model, which corresponds to the characteristic size of overlapping sp2 domains belonging to different nanosheets. Thus, we propose a microscopic model describing the charge transport as a geometrical phase transition, given by the metal-insulator transition associated with the percolation of quasi-1D nanofillers with length xi, showing that the charge transport behavior of the networks is valid for all geometries and defects of the nanosheets, ultimately suggesting a generalized description on vdW and disordered thin films.
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Submitted 2 February, 2021;
originally announced February 2021.
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Monitoring morphological and chemical properties during silver solid-state dewetting
Authors:
M. Berni,
I. Carrano,
A. Kovtun,
A. Russo,
A. Visani,
C. Dionigi,
A. Liscio,
F. Valle,
A. Gambardella
Abstract:
Solid-state dewetting phenomenon in silver thin films offers a straightforward method to obtain structures having controlled shape or size -this latter in principle spanning several orders of magnitudes -- with potentially strong interest in many applications involving high-tech industry and biomedicine. In this work nanostructured silver is deposited by pulsed electron ablation technique and its…
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Solid-state dewetting phenomenon in silver thin films offers a straightforward method to obtain structures having controlled shape or size -this latter in principle spanning several orders of magnitudes -- with potentially strong interest in many applications involving high-tech industry and biomedicine. In this work nanostructured silver is deposited by pulsed electron ablation technique and its surface modified upon thermal treatments in air at increasing temperatures. Surface chemistry and morphology are then monitored simultaneously by X-ray photoemission spectroscopy and atomic force microscopy; in particular, the power spectral density of surface heights is used to analyze the alteration of morphology induced by annealing. It is shown that this approach adds a level of information about the dewetting process since it allows to separate between long- and short-range surface behavior and to retrieve statistical quantities relevant to a description of the features in view of applications. Our results are presented in the framework of a multidisciplinary approach, advantages and limits of which are deepened and discussed.
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Submitted 9 July, 2020;
originally announced July 2020.
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Controlling the Functional Properties of Oligothiophene Crystalline Nano/Micro-Fibers via Tailoring of the Self-Assembling Molecular Precursors
Authors:
Francesca Di Maria,
Mattia Zangoli,
Massimo Gazzano,
Eduardo Fabiano,
Denis Gentili,
Alberto Zanelli,
Andrea Fermi,
Giacomo Bergamini,
Davide Bonifazi,
Andrea Perinot,
Mario Caironi,
Raffaello Mazzaro,
Vittorio Morandi,
Giuseppe Gigli,
Andrea Liscio,
Giovanna Barbarella
Abstract:
Oligothiophenes are pi-conjugated semiconducting and fluorescent molecules whose self-assembly properties are widely investigated for application in organic electronics, optoelectronics, biophotonics and sensing. We report here an approach to the preparation of crystalline oli-gothiophene nano/micro-fibers based on the use of a sulfur overrich quaterthiophene building block, -T4S4-, containing in…
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Oligothiophenes are pi-conjugated semiconducting and fluorescent molecules whose self-assembly properties are widely investigated for application in organic electronics, optoelectronics, biophotonics and sensing. We report here an approach to the preparation of crystalline oli-gothiophene nano/micro-fibers based on the use of a sulfur overrich quaterthiophene building block, -T4S4-, containing in its covalent network all the information needed to promote the di-rectional, pi-pi stacking driven, self-assembly of Ar-T4S4-Ar oligomers into fibers with hierar-chical supramolecular arrangement from nano- to microscale. We show that when Ar varies from unsubstituted thiophene to thiophene substituted with electron withdrawing groups, a wide redistribution of the molecular electronic charge takes place without substantially affecting the aggregation modalities of the oligomer. In this way a structurally comparable series of fibers is obtained having progressively varying optical properties, redox potentials, photoconductivity and type of prevailing charge carriers (from p- to n-type). A thorough characterization of the fi-bers based on SEM, CD, CV, X-ray diffraction, UV-vis and PL spectroscopies, photoconductivi-ty and KPFM measurements is reported. With the aid of DFT calculations, combined with X-ray data, a model accounting for the growth of the fibers from molecular to nano- and microscale is proposed. We believe that the simple strategy outlined in this study allows to establish a straightforward correlation between the molecular structure of the components and the function-al properties of the corresponding self-assembled nano/micro-fibers.
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Submitted 5 December, 2019;
originally announced December 2019.
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Kelvin probe force microscopy of metallic surfaces used in Casimir force measurements
Authors:
R. O. Behunin,
D. A. R. Dalvit,
R. S. Decca,
C. Genet,
I. W. Jung,
A. Lambrecht,
A. Liscio,
D. Lopez,
S. Reynaud,
G. Schnoering,
G. Voisin,
Y. Zeng
Abstract:
Kelvin probe force microscopy at normal pressure was performed by two different groups on the same Au-coated planar sample used to measure the Casimir interaction in a sphere-plane geometry. The obtained voltage distribution was used to calculate the separation dependence of the electrostatic pressure $P_{\rm res}(D)$ in the configuration of the Casimir experiments. In the calculation it was assum…
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Kelvin probe force microscopy at normal pressure was performed by two different groups on the same Au-coated planar sample used to measure the Casimir interaction in a sphere-plane geometry. The obtained voltage distribution was used to calculate the separation dependence of the electrostatic pressure $P_{\rm res}(D)$ in the configuration of the Casimir experiments. In the calculation it was assumed that the potential distribution in the sphere has the same statistical properties as the measured one, and that there are no correlation effects on the potential distributions due to the presence of the other surface. Within this framework, and assuming that the potential distribution does not vary significantly at low pressure, the calculated $P_{\rm res}(D)$ does not explain the magnitude or the separation dependence of the difference $ΔP (D)$ between the measured Casimir pressure and the one calculated using a Drude model for the electromagnetic response of Au.
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Submitted 1 December, 2014; v1 submitted 14 July, 2014;
originally announced July 2014.
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Turbostratic graphitic microstructures: electronically decoupled multilayer graphene devices with robust high charge carrier mobility
Authors:
Yenny R. Hernandez,
Sebastian Schweitzer,
June-Seo Kim,
Ajit Kumar Patra,
Jan Englert,
Ingo Lieberwirth,
Andrea Liscio,
Vincenzo Palermo,
Xinliang Feng,
Andreas Hirsch,
Mathias Kläui,
Klaus Müllen
Abstract:
Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Her…
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Carbon nanomaterials continue to amaze scientists due to their exceptional physical properties. Recently there have been theoretical predictions and first reports on graphene multilayers, where, due to the rotation of the stacked layers, outstanding electronic properties are retained while the susceptibility to degradation and mechanical stress is strongly reduced due to the multilayer nature. Here we show that fully turbostratic multilayer graphitic microstructures combine the high charge carrier mobilities necessary for advanced electronic and spintronic devices with the robustness of graphitic structures. Structural characterization of disk-shaped graphitic microstructures using Raman spectroscopy and Transmission Electron Microscopy (TEM) reveals Moiré and diffraction patterns corroborating their turbostratic nature. Electronic transport characterization yields reproducible high mobilities > 105 cm^2(Vs)^(-1) independent of the disks thickness, which is a direct consequence of the electronic decoupling induced by the turbostratic stacking.
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Submitted 25 January, 2013;
originally announced January 2013.
