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Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors
Authors:
Ning Xu,
Li Shi,
Xudong Pei,
Weiyang Zhang,
Jian Chen,
Zheng Han,
Paolo Samorì,
Jinlan Wang,
Peng Wang,
Yi Shi,
Songlin Li
Abstract:
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric surve…
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Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge transfer theory, the realistic reaction character and mechanism in dimensionally confined systems remain unknown. Here, we report the multiparametric survey on the kinetics of lateral photooxidation in structurally identical WS2 and MoS2 monolayers, where electrochemical oxidation occurs at the atomically thin monolayer edges. The oxidation rate is correlated quantitatively with various crystallographic and environmental parameters, including the density of reactive sites, humidity, temperature, and illumination fluence. In particular, we observe distinctive reaction barriers of 1.4 and 0.9 eV for the two structurally identical semiconductors and uncover an unusual non-Marcusian charge transfer mechanism in these dimensionally confined monolayers due to the limit in reactant supplies. A scenario of band bending is proposed to explain the discrepancy in reaction barriers. These results add important knowledge into the fundamental electrochemical reaction theory in low-dimensional systems.
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Submitted 17 July, 2023;
originally announced July 2023.
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Non-invasive digital etching of van der Waals semiconductors
Authors:
Jian Zhou,
Chunchen Zhang,
Li Shi,
Xiaoqing Chen Tae-Soo Kim,
Minseung Gyeon,
Jian Chen Jinlan Wang,
Linwei Yu Xinran Wang Kibum Kang,
Emanuele Orgiu,
Paolo Samorì,
Kenji Watanabe,
Takashi Taniguchi,
Kazuhito Tsukagoshi,
Peng Wang,
Yi Shi,
Songlin Li
Abstract:
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals tr…
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The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS$_2$ reaches up to $1200\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.
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Submitted 26 June, 2023;
originally announced June 2023.
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Nano-Subsidence Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays
Authors:
Song-Lin Li,
Lei Zhang,
Xiaolan Zhong,
Marco Gobbi,
Simone Bertolazzi,
Wei Guo,
Bin Wu,
Yunqi Liu,
Emanuele Orgiu,
Paolo Samorì
Abstract:
The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely c…
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The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely challenging due to their poor adhesion to underlying substrates as ruled by weak van der Waals interactions. Here we report on a novel fabrication method based on nano-subsidence which enables the precise and reliable integration of the micro-patterned 2D materials/silicon photodiode arrays exhibiting high uniformity. Our devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ca. 90%, outperforming most commercial photodiodes. The nano-subsidence technique opens a viable path to on-chip integrate 2D crystals onto silicon for beyond-silicon microelectronics.
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Submitted 24 June, 2023;
originally announced June 2023.
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Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne A. Y. Guilbert,
Gabriele D'Avino,
Fabiola Liscio,
Andrea Migliori,
Luca Ortolani,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Andrea Liscio,
Marco-Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.
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Submitted 11 May, 2021;
originally announced May 2021.
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Multiscale charge transport in van der Waals thin films: reduced graphene oxide as case study
Authors:
Alessandro Kovtun,
Andrea Candini,
Anna Vianelli,
Alex Boschi,
Simone Dell Elce,
Marco Gobbi,
Kyung Ho Kim,
Samuel Lara Avila,
Paolo Samori,
Marco Affronte,
Andrea Liscio,
Vincenzo Palermo
Abstract:
Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e. vdW heterostructures) have been the subject of intensive wo…
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Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e. vdW heterostructures) have been the subject of intensive works, little is known about how charges travel through multilayered, more disordered networks. Here we report a comprehensive study of a prototypical system given by networks of randomly stacked reduced graphene oxide 2D nanosheets, whose chemical and geometrical properties can be controlled independently, permitting to explore percolated networks ranging from a single nanosheet to some billions with room temperature resistivity spanning from 10-5 to 10-1 ohm m. We systematically observe a clear transition between two different regimes at a critical temperature T*: Efros-Shklovskii variable range hopping (ESVRH) below T* and power law (PL) behavior above. Firstly, we demonstrate that the two regimes are strongly correlated with each other, both depending on the charge localization length xi, calculated by ES-VRH model, which corresponds to the characteristic size of overlapping sp2 domains belonging to different nanosheets. Thus, we propose a microscopic model describing the charge transport as a geometrical phase transition, given by the metal-insulator transition associated with the percolation of quasi-1D nanofillers with length xi, showing that the charge transport behavior of the networks is valid for all geometries and defects of the nanosheets, ultimately suggesting a generalized description on vdW and disordered thin films.
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Submitted 2 February, 2021;
originally announced February 2021.
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Freeing electrons from extrinsic and intrinsic disorder yields band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne Y. Guilbert,
Gabriele DAvino,
Fabiola Liscio,
Nicola Demitri,
Xin Jin,
Young-Gyun Jeong,
Marco Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge c…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be extrinsic, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both intrinsic and extrinsic disorder to ultimately reach band-like electron transport.
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Submitted 11 September, 2019;
originally announced September 2019.
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Coherent Coupling of WS_2 Monolayers with Metallic Photonic Nanostructures at Room Temperature
Authors:
S. Wang,
S. Li,
T. Chervy,
A. Shalabney,
S. Azzini,
E. Orgiu,
J. A. Hutchison,
C. Genet,
P. Samori,
T. W. Ebbesen
Abstract:
Room temperature strong coupling of WS_2 monolayer exciton transitions to metallic Fabry-Perot and plasmonic optical cavities is demonstrated. A Rabi splitting of 101 meV is observed for the Fabry-Perot cavity, more than double those reported to date in other 2D materials. The enhanced magnitude and visibility of WS_2 monolayer strong coupling is attributed to the larger absorption coefficient, th…
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Room temperature strong coupling of WS_2 monolayer exciton transitions to metallic Fabry-Perot and plasmonic optical cavities is demonstrated. A Rabi splitting of 101 meV is observed for the Fabry-Perot cavity, more than double those reported to date in other 2D materials. The enhanced magnitude and visibility of WS_2 monolayer strong coupling is attributed to the larger absorption coefficient, the narrower linewidth of the A exciton transition, and greater spin-orbit coupling. For WS_2 coupled to plasmonic arrays, the Rabi splitting still reaches 60 meV despite the less favorable coupling conditions, and displays interesting photoluminescence features. The unambiguous signature of WS_2 monolayer strong coupling in easily fabricated metallic resonators at room temperature suggests many possibilities for combining light-matter hybridization with spin and valleytronics.
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Submitted 22 April, 2016;
originally announced April 2016.
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Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
Authors:
Song-Lin Li,
Kazihito Tsukagoshi,
Emanuele Orgiu,
Paolo Samorì
Abstract:
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (…
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Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of \textit{ad-hoc} molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light onto the theoretical and experimental works, we provide a guide for improving the electronic performance of the 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.
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Submitted 9 February, 2016;
originally announced February 2016.
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Conductivity in organic semiconductors hybridized with the vacuum field
Authors:
E. Orgiu,
J. George,
J. A. Hutchison,
E. Devaux,
J. F. Dayen,
B. Doudin,
F. Stellacci,
C. Genet,
J. Schachenmayer,
C. Genes,
G. Pupillo,
P. Samori,
T. W. Ebbesen
Abstract:
Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5-8]. Much effort over the past decades has therefore been focused on optimizing th…
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Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5-8]. Much effort over the past decades has therefore been focused on optimizing the organisation of the material or the devices to improve carrier mobility. Here we take a radically different path to solving this problem, namely by injecting carriers into states that are hybridized to the vacuum electromagnetic field. These are coherent states that can extend over as many as 10^5 molecules and should thereby favour conductivity in such materials. To test this idea, organic semiconductors were strongly coupled to the vacuum electromagnetic field on plasmonic structures to form polaritonic states with large Rabi splittings ca. 0.7 eV. Conductivity experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility as revealed when the structure is gated in a transistor configuration. A theoretical quantum model is presented that confirms the delocalization of the wave-functions of the hybridized states and the consequences on the conductivity. While this is a proof-of-principle study, in practice conductivity mediated by light-matter hybridized states is easy to implement and we therefore expect that it will be used to improve organic devices. More broadly our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.
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Submitted 26 May, 2015; v1 submitted 5 September, 2014;
originally announced September 2014.
