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Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography
Authors:
Islam Abdo,
Christos Trompoukis,
Jan Deckers,
Valérie Depauw,
Loic Tous,
Dries Van Gestel,
Rafik Guindi,
Ivan Gordon,
Ounsi El Daif
Abstract:
The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the s…
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The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.
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Submitted 29 July, 2015;
originally announced July 2015.
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Influence of Periodic Surface Nanopatterning Profiles on Series Resistance in Thin-Film Crystalline Silicon Heterojunction Solar Cells
Authors:
Islam Abdo,
Christos Trompoukis,
Loic Tous,
Valerie Depauw,
Rafik Guindi,
Ivan Gordon,
Ounsi El Daif
Abstract:
In the frame of the development of thin crystalline silicon solar cell technologies, surface nanopatterning of silicon is gaining importance. Its impact on the material quality is, however, not yet fully controlled.We investigate here the influence of surface nanotexturing on the series resistance of a contacting scheme relevant for thin-film crystalline silicon heterojunction solar cells. Two dim…
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In the frame of the development of thin crystalline silicon solar cell technologies, surface nanopatterning of silicon is gaining importance. Its impact on the material quality is, however, not yet fully controlled.We investigate here the influence of surface nanotexturing on the series resistance of a contacting scheme relevant for thin-film crystalline silicon heterojunction solar cells. Two dimensional periodic nanotextures are fabricated using a combination of nanoimprint lithography and either dry or wet etching, while random pyramid texturing is used for benchmarking. We compare these texturing techniques in terms of their effect on the series resistance of a solar cell through a study of the sheet resistance (Rsh ) and contact resistance (Rc) of its front layers, i.e., a sputtered transparent conductive oxide and evaporated metal contacts. We have found by four-point probe and the transfer length methods that dry-etched nanopatterns render the highest Rsh and Rc values. Wet-etched nanopatterns, on the other hand, have less impact on Rc and render Rsh similar to that obtained from the nontextured case.
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Submitted 15 July, 2015;
originally announced July 2015.
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Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals
Authors:
V. Depauw,
X. Meng,
O. El Daif,
G. Gomard,
L. Lalouat,
E. Drouard,
C. Trompoukis,
A. Fave,
C. Seassal,
I. Gordon
Abstract:
A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-μm thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between…
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A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-μm thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between modeled and actual optical behaviors of the cell, and between ideal and actual morphologies, show the global robustness of the nanostructure to experimental deviations, but its particular sensitivity to the conformality of the top coatings and the spread in pattern dimensions, which should not be neglected in the optical model. As for the electrical behavior, the measured internal quantum efficiency shows the strong parasitic absorptions from the transparent conductive oxide and from the back-reflector, as well as the negative impact of the nanopattern on surface passivation. Our exemplifying case, thus, illustrates and experimentally confirms two recommendations for future integration of surface nanostructures for light trapping purposes: 1) the necessity to optimize absorption not for the total stack but for the single active material, and 2) the necessity to avoid damage to the active material by pattern etching.
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Submitted 20 December, 2013;
originally announced December 2013.
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Broadband absorption enhancement in ultra-thin crystalline Si solar cells by incorporating metallic and dielectric nanostructures in the back reflector
Authors:
Samart Jain,
Valerie Depauw,
Vladimir D. Miljkovic,
Alexamder Dmitriev,
Christos Trompoukis,
Ivan Gordon,
Pol van Dorpe,
Ounsi El Daif
Abstract:
We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic nanostructures located at the back side, and optimize them for enhancing absorption in the silicon layer. We validate our numerical results experimentally and also compa…
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We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic nanostructures located at the back side, and optimize them for enhancing absorption in the silicon layer. We validate our numerical results experimentally and also compare the absorption enhancement in the solar cell structure, both with quasi-periodic and random metallic nanostructures. We have looked at the interplay between the metallic nanostructures and an integrated back-reflector. We show that the combination of metallic nanoparticles and a metallic reflector results in significant parasitic absorption. We compared this to another implementation based on titanium dioxide nanoparticles which act as a lambertian reflector of light. Our simulation and experimental results show that this proposed configuration results in reduced absorption losses and in broadband enhancement of absorption for ultra-thin solar cells, paving the way to an optimal back reflector for thin film photovoltaics.
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Submitted 18 June, 2013;
originally announced June 2013.
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Inverted random nanopyramids patterning for crystalline silicon photovoltaics
Authors:
Ounsi El Daif,
Christos Trompoukis,
Bjoern Niesen,
Marwa Ben Yaala,
Parikshit Pratim Sharma,
Valerie Depauw,
Ivan Gordon
Abstract:
We demonstrate a nanopatterning technique for silicon photovoltaics, which optically outperforms conventional micron-scale random pyramids, while decreasing by a factor of ten the quantity of silicon lost during the texturing process. We combine hole-mask colloidal lithography, a bottom-up nanolithography technique, with reactive ion etching to define nanopyramids at the surface of a silicon wafer…
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We demonstrate a nanopatterning technique for silicon photovoltaics, which optically outperforms conventional micron-scale random pyramids, while decreasing by a factor of ten the quantity of silicon lost during the texturing process. We combine hole-mask colloidal lithography, a bottom-up nanolithography technique, with reactive ion etching to define nanopyramids at the surface of a silicon wafer. Thanks to the self-organised aspect of the technique, the beads are randomly distributed, however keeping a interbead distance of the order of their diameter. We tune the nanopattern feature size to maximize the absorption in the crystalline silicon by exploiting both anti-reflection and light trapping. When optimized, the nanopyramids lead to a higher absorption in the crystalline silicon than the conventional micron-scale random pyramids in the visible and near the band edge, with a superior robustness to variations of the angle of the incident light. As the nanopatterning technique presented here is simple, we expect that it could be readily integrated into the crystalline silicon solar cell fabrication processing.
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Submitted 2 June, 2013; v1 submitted 27 May, 2013;
originally announced May 2013.
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Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography
Authors:
Christos Trompoukis,
Ounsi El Daif,
Valérie Depauw,
Ivan Gordon,
Jef Poortmans
Abstract:
We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-μm-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the su…
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We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-μm-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.
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Submitted 13 December, 2012;
originally announced December 2012.
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Exploring the parameter space of disc shaped silver nanoparticles for thin film silicon photovoltaics
Authors:
Bruno Figeys,
Ounsi El Daif
Abstract:
We numerically simulate, using finite-difference time-domain, the optical properties of silver nano discs deposited on the front surface of silicon solar cells. We explore the effect of each of the parameters of such a system, in order to draw some general design rules for the subsequent fabrication of such structures.
We numerically simulate, using finite-difference time-domain, the optical properties of silver nano discs deposited on the front surface of silicon solar cells. We explore the effect of each of the parameters of such a system, in order to draw some general design rules for the subsequent fabrication of such structures.
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Submitted 16 November, 2011;
originally announced November 2011.
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Absorbing photonic crystals for thin film photovoltaics
Authors:
O. El Daif,
E. Drouard,
G. Gomard,
X. Meng,
A. Kaminski,
A. Fave,
M. Lemiti,
E. Garcia Caurel,
P. Roca i Cabarrocas,
S. Ahn,
H. Jeon,
C. Seassal
Abstract:
The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic crystal. We theoretically demonstrate this absorption enhancement through one or two dimensional patterning, and show the experimental feas…
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The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic crystal. We theoretically demonstrate this absorption enhancement through one or two dimensional patterning, and show the experimental feasibility through large area holographic patterning. Numerical simulations show over 50% absorption enhancement over the part of the solar spectrum comprised between 380 and 750nm. It is experimentally confirmed by optical measurements performed on planar photonic crystals fabricated by laser holography and reactive ion etching.
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Submitted 26 May, 2010;
originally announced May 2010.
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Nonlinear relaxation of 0-dimension-trapped microcavity polaritons
Authors:
Ounsi El Daif,
Gael Nardin,
Taofiq K. Paraiso,
Augustin Baas,
Maxime Richard,
J. -P. Brantut,
Francois Morier-Genoud,
Benoit Deveaud-Pledran,
Thierry Guillet
Abstract:
We study the emission properties of confined polariton states in shallow zero-dimensional traps under non-resonant excitation. We evidence several relaxation regimes. For slightly negative photon-exciton detuning, we observe a nonlinear increase of the emission intensity, characteristic of carrier-carrier scattering assisted relaxation under strong-coupling regime. This demonstrates the efficien…
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We study the emission properties of confined polariton states in shallow zero-dimensional traps under non-resonant excitation. We evidence several relaxation regimes. For slightly negative photon-exciton detuning, we observe a nonlinear increase of the emission intensity, characteristic of carrier-carrier scattering assisted relaxation under strong-coupling regime. This demonstrates the efficient relaxation towards a confined state of the system. For slightly positive detuning, we observe the transition from strong to weak coupling regime and then to single-mode lasing.
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Submitted 19 May, 2009;
originally announced May 2009.
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Absorption enhancement in amorphous silicon photonic crystals for thin film photovoltaic solar cells
Authors:
Ounsi El Daif,
Emmanuel Drouard,
Yeonsang Park,
Alain Fave,
Anne Kaminski,
Mustapha Lemiti,
Xavier Letartre,
Pierre Viktorovitch,
Sungmo Ahn,
Heonsu Jeon,
Christian Seassal
Abstract:
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a film of aSi. The proposal is then validated by an experimental demonst…
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We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a film of aSi. The proposal is then validated by an experimental demonstration, showing an important increase of the absorption of a layer of aSi over a spectral range of 0.32-0.76 microns.
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Submitted 13 May, 2009;
originally announced May 2009.
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Optical manipulation of the wave function of quasiparticles in a solid
Authors:
R. Cerna,
D. Sarchi,
T. K. Paraiso,
G. Nardin,
Y. Leger,
M. Richard,
B. Pietka,
O. El Daif,
F. Morier-Genoud,
V. Savona,
M. T. Portella-Oberli,
B. Deveaud-Pledran
Abstract:
Polaritons in semiconductor microcavities are hybrid quasiparticles consisting of a superposition of photons and excitons. Due to the photon component, polaritons are characterized by a quantum coherence length in the several micron range. Owing to their exciton content, they display sizeable interactions, both mutual and with other electronic degrees of freedom. These unique features have produ…
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Polaritons in semiconductor microcavities are hybrid quasiparticles consisting of a superposition of photons and excitons. Due to the photon component, polaritons are characterized by a quantum coherence length in the several micron range. Owing to their exciton content, they display sizeable interactions, both mutual and with other electronic degrees of freedom. These unique features have produced striking matter wave phenomena, such as Bose-Einstein condensation, or parametric processes able to generate quantum entangled polariton states. Recently, several paradigms for spatial confinement of polaritons in semiconductor devices have been established. This opens the way to quantum devices in which polaritons can be used as a vector of quantum information. An essential element of each quantum device is the quantum state control. Here we demonstrate control of the wave function of confined polaritons, by means of tailored resonant optical excitation. By tuning the energy and momentum of the laser, we achieve precise control of the momentum pattern of the polariton wave function. A theoretical model supports unambiguously our observations.
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Submitted 28 April, 2009;
originally announced April 2009.
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Polariton quantum boxes in semiconductor microcavities
Authors:
Ounsi El Daïf,
Augustin Baas,
Thierry Guillet,
Jean-Philippe Brantut,
Reda Idrissi-Kaitouni,
Jean-Louis Staehli,
Francois Morier-Genoud,
Benoit Deveaud
Abstract:
We report on the realization of polariton quantum boxes in a semiconductor microcavity under strong coupling regime. The quantum boxes consist of mesas that confine the cavity photon, etched on top of the spacer of a microcavity. For mesas with sizes of the order of a few micron in width and nm in depth, we observe quantization, caused by the lateral confinement, of the polariton modes in severa…
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We report on the realization of polariton quantum boxes in a semiconductor microcavity under strong coupling regime. The quantum boxes consist of mesas that confine the cavity photon, etched on top of the spacer of a microcavity. For mesas with sizes of the order of a few micron in width and nm in depth, we observe quantization, caused by the lateral confinement, of the polariton modes in several peaks. We evidence the strong exciton-photon coupling regime through a typical/clear anticrossing curve for each quantized level. Moreover the growth technique is of high quality, which opens the way for the conception of new optoelectronic devices.
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Submitted 28 February, 2006;
originally announced February 2006.
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Engineering the spatial confinement of exciton-polaritons in semiconductors
Authors:
Reda Idrissi Kaitouni,
Ounsi El Daif,
Maxime Richard,
Pierre Lugan,
Augustin Baas,
Thierry Guillet,
François Morier-Genoud,
Jean-Daniel Ganière,
Jean-Louis Staehli,
Vincenzo Savona,
Benoît Deveaud
Abstract:
We demonstrate the spatial confinement of electronic excitations in a solid state system, within novel artificial structures that can be designed having arbitrary dimensionality and shape. The excitations under study are exciton-polaritons in a planar semiconductor microcavity. They are confined within a micron-sized region through lateral trapping of their photon component. Striking signatures…
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We demonstrate the spatial confinement of electronic excitations in a solid state system, within novel artificial structures that can be designed having arbitrary dimensionality and shape. The excitations under study are exciton-polaritons in a planar semiconductor microcavity. They are confined within a micron-sized region through lateral trapping of their photon component. Striking signatures of confined states of lower and upper polaritons are found in angle-resolved light emission spectra, where a discrete energy spectrum and broad angular patterns are present. A theoretical model supports unambiguously our observations.
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Submitted 5 March, 2006; v1 submitted 27 February, 2006;
originally announced February 2006.