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Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures and Fermi levels
Authors:
L. Chen,
L. Pedesseau,
Y. Léger,
N. Bertru,
J. Even,
C. Cornet
Abstract:
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based on first-principle calculations. Especially, we demonstrate how the ladder or zigzag chemical bond configuration can lead for the different cases to…
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Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based on first-principle calculations. Especially, we demonstrate how the ladder or zigzag chemical bond configuration can lead for the different cases to a gapped semiconducting band structure, to a gapped metallic band structure or to a non-gapped metallic band structure. Besides, we evidence that the ladder APB configurations impact more significantly the Fermi energy levels than the zigzag APB configurations. We finally discuss how these different band structures can have some consequences on the operation of monolithic III-V/Si devices for photonics or energy harvesting.
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Submitted 3 June, 2022;
originally announced June 2022.
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Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Authors:
Konstantinos Pantzas,
Sylvain Combrié,
Myriam Bailly,
Raphaël Mandouze,
Francesco Rinaldi Talenti,
Abdelmounaim Harouri,
Bruno Gérard,
Grégoire Beaudoin,
Luc Le Gratiet,
Gilles Patriarche,
Alfredo de Rossi,
Yoan Léger,
Isabelle Sagnes,
Arnaud Grisard
Abstract:
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c…
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A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
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Submitted 5 May, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Authors:
Lipin Chen,
Mahdi Alqahtani,
Christophe Levallois,
Antoine Létoublon,
Julie Stervinou,
Rozenn Piron,
Soline Boyer-Richard,
Jean-Marc Jancu,
Tony Rohel,
Rozenn Bernard,
Yoan Léger,
Nicolas Bertru,
Jiang Wu,
Ivan P. Parkin,
Charles Cornet
Abstract:
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption…
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Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.
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Submitted 7 February, 2020;
originally announced February 2020.
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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
Authors:
C. Cornet,
S. Charbonnier,
I. Lucci,
L. Chen,
A. Letoublon,
A. Alvarez,
K. Tavernier,
T. Rohel,
R. Bernard,
J. -B. Rodriguez,
L. Cerutti,
E. Tournie,
Y. Leger,
G. Patriarche,
L. Largeau,
A. Ponchet,
P. Turban,
N. Bertru
Abstract:
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th…
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Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.
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Submitted 15 January, 2020;
originally announced January 2020.
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Phonon mediated conversion of exciton-polaritons Rabi oscillation into THz radiation
Authors:
Katharina Rojan,
Yoan Leger,
Giovanna Morigi,
Maxime Richard,
Anna Minguzzi
Abstract:
Semiconductor microcavities in the strong-coupling regime exhibit an energy scale in the THz frequency range, which is fixed by the Rabi splitting between the upper and lower exciton-polariton states. While this range can be tuned by several orders of magnitude using different excitonic medium, the transition between both polaritonic states is dipole forbidden. In this work we show that in Cadmium…
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Semiconductor microcavities in the strong-coupling regime exhibit an energy scale in the THz frequency range, which is fixed by the Rabi splitting between the upper and lower exciton-polariton states. While this range can be tuned by several orders of magnitude using different excitonic medium, the transition between both polaritonic states is dipole forbidden. In this work we show that in Cadmium Telluride microcavities, the Rabi-oscillation driven THz radiation is actually active without the need for any change in the microcavity design. This feature results from the unique resonance condition which is achieved between the Rabi splitting and the phonon-polariton states, and leads to a giant enhancement of the second order nonlinearity.
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Submitted 12 June, 2017;
originally announced June 2017.
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2D Fourier Transform Spectroscopy of exciton-polaritons and their interactions
Authors:
N. Takemura,
S. Trebaol,
M. D. Anderson,
V. Kohnle,
Y. Léger,
D. Y. Oberli,
M. T. Portella-Oberli,
B. Deveaud
Abstract:
We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interaction, a lower-upper cross-interaction. This appears as separated peaks in the on-diagonal and off-diagonal part of 2DFT spectra. Moreover, we elucidate the role of the polar…
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We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interaction, a lower-upper cross-interaction. This appears as separated peaks in the on-diagonal and off-diagonal part of 2DFT spectra. Moreover, we elucidate the role of the polariton dispersion through a fine structure in the 2DFT spectrum. Simulations, based on lower-upper polariton basis Gross-Pitaevskii equations including both self and cross-interactions, result in a 2DFT spectra in qualitative agreement with experiments.
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Submitted 5 June, 2015;
originally announced June 2015.
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Exciton-polaritons gas as a nonequilibrium coolant
Authors:
Sebastian Klembt,
Emilien Durupt,
Sanjoy Datta,
Thorsten Klein,
Augustin Baas,
Yoan Léger,
Carsten Kruse,
Detlef Hommel,
Anna Minguzzi,
Maxime Richard
Abstract:
Using angle-resolved Raman spectroscopy, we show that a resonantly excited ground-state exciton-polariton fluid behaves like a nonequilibrium coolant for its host solid-state semiconductor microcavity. With this optical technique, we obtain a detailed measurement of the thermal fluxes generated by the pumped polaritons. We thus find a maximum cooling power for a cryostat temperature of $50$K and b…
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Using angle-resolved Raman spectroscopy, we show that a resonantly excited ground-state exciton-polariton fluid behaves like a nonequilibrium coolant for its host solid-state semiconductor microcavity. With this optical technique, we obtain a detailed measurement of the thermal fluxes generated by the pumped polaritons. We thus find a maximum cooling power for a cryostat temperature of $50$K and below where optical cooling is usually suppressed, and we identify the participation of an ultrafast cooling mechanism. We also show that the nonequilibrium character of polaritons constitutes an unexpected resource: each scattering event can remove more heat from the solid than would be normally allowed using a thermal fluid with normal internal equilibration.
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Submitted 24 February, 2015; v1 submitted 8 December, 2014;
originally announced December 2014.
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Phase space monitoring of exciton-polariton multistability
Authors:
Yoan Léger
Abstract:
Dynamics of exciton-polariton multistability is theoretically investigated. Phase portraits are used as a tool to enlighten the microscopic phenomena which influence spin multistability of a confined polariton field as well as ultrafast reversible spin switching. The formation of a non-radiative reservoir, due to polariton pairing into biexcitons is found to play the lead role in the previously re…
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Dynamics of exciton-polariton multistability is theoretically investigated. Phase portraits are used as a tool to enlighten the microscopic phenomena which influence spin multistability of a confined polariton field as well as ultrafast reversible spin switching. The formation of a non-radiative reservoir, due to polariton pairing into biexcitons is found to play the lead role in the previously reported spin switching experiments. Ways to tailor this reservoir formation are discussed in order to obtain optimal spin switching reliability.
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Submitted 28 January, 2014;
originally announced January 2014.
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Ultrafast tristable spin memory of a coherent polariton gas
Authors:
Roland Cerna,
Yoan Léger,
Taofiq K. Paraïso,
Michiel Wouters,
François Morier-Genoud,
Marcia T. Portella-Oberli,
Benoît Deveaud
Abstract:
Nonlinear interactions in coherent gases are not only at the origin of of bright and dark solitons and superfluids. At the same time, they give rise to phenomena such as multistability, which hold great promise for the development of advanced photonic and spintronic devices. In particular, spinor multistability in strongly-coupled semiconductor microcavities shows that the spin of hundreds of exci…
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Nonlinear interactions in coherent gases are not only at the origin of of bright and dark solitons and superfluids. At the same time, they give rise to phenomena such as multistability, which hold great promise for the development of advanced photonic and spintronic devices. In particular, spinor multistability in strongly-coupled semiconductor microcavities shows that the spin of hundreds of exciton-polaritons can be coherently controlled, opening the route to spin-optronic devices such as ultrafast spin memories, gates or even neuronal communication schemes. Here, we demonstrate that switching between the stable spin states of a driven polariton gas can be controlled by ultrafast optical pulses. While such a long-lived spin memory necessarily relies on strong and anisotropic spinor interactions within the coherent polariton gas, we also highlight the crucial role of nonlinear losses and formation of a non-radiative particle reservoir for ultrafast spin-switching.
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Submitted 20 June, 2013;
originally announced June 2013.
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Soliton Instabilities and Vortex Streets Formation in a Polariton Quantum Fluid
Authors:
G. Grosso,
G. Nardin,
F. Morier-Genoud,
Y. Léger,
B. Deveaud-Plédran
Abstract:
Exciton-polaritons have been shown to be an optimal system in order to investigate the properties of bosonic quantum fluids. We report here on the observation of dark solitons in the wake of engineered circular obstacles and their decay into streets of quantized vortices. Our experiments provide a time-resolved access to the polariton phase and density, which allows for a quantitative study of ins…
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Exciton-polaritons have been shown to be an optimal system in order to investigate the properties of bosonic quantum fluids. We report here on the observation of dark solitons in the wake of engineered circular obstacles and their decay into streets of quantized vortices. Our experiments provide a time-resolved access to the polariton phase and density, which allows for a quantitative study of instabilities of freely evolving polaritons. The decay of solitons is quantified and identified as an effect of disorder-induced transverse perturbations in the dissipative polariton gas.
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Submitted 30 September, 2011;
originally announced September 2011.
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From single particle to superfuid excitations in a dissipative polariton gas
Authors:
Verena Kohnle,
Yoan Léger,
Michiel Wouters,
Maxime Richard,
Marcia T. Portella-Oberli,
Benoit Deveaud-Plédran
Abstract:
Using angle-resolved heterodyne four-wave-mixing technique, we probe the low momentum excitation spectrum of a coherent polariton gas. The experimental results are well captured by the Bogoliubov transformation which describes the transition from single particle excitations of a normal fluid to sound-wave-like excitations of a superfluid. In a dense coherent polariton gas, we find all the characte…
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Using angle-resolved heterodyne four-wave-mixing technique, we probe the low momentum excitation spectrum of a coherent polariton gas. The experimental results are well captured by the Bogoliubov transformation which describes the transition from single particle excitations of a normal fluid to sound-wave-like excitations of a superfluid. In a dense coherent polariton gas, we find all the characteristics of a Bogoliubov transformation, i.e. the positive and negative energy branch with respect to the polariton gas energy at rest, sound-wave-like shapes for the excitations dispersion, intensity and linewidth ratio between the two branches in agreement with the theory. The influence of the non-equilibrium character of the polariton gas is shown by a careful analysis of its dispersion.
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Submitted 8 March, 2011;
originally announced March 2011.
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Spin-to-Orbital Angular Momentum Conversion in Semiconductor Microcavities
Authors:
F. Manni,
K. G. Lagoudakis,
T. K. Paraïso,
R. Cerna,
Y. Leger,
T. C. H. Liew,
I. A. Shelykh,
A. V. Kavokin,
F. Morier-Genoud,
B. Deveaud-Plédran
Abstract:
We experimentally demonstrate a technique for the generation of optical beams carrying orbital angular momentum using a planar semiconductor microcavity. Despite being isotropic systems, the transverse electric - transverse magnetic (TE-TM) polarization splitting featured by semiconductor microcavities allows for the conversion of the circular polarization of an incoming laser beam into the orbita…
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We experimentally demonstrate a technique for the generation of optical beams carrying orbital angular momentum using a planar semiconductor microcavity. Despite being isotropic systems, the transverse electric - transverse magnetic (TE-TM) polarization splitting featured by semiconductor microcavities allows for the conversion of the circular polarization of an incoming laser beam into the orbital angular momentum of the transmitted light field. The process implies the formation of topological entities, a pair of optical half-vortices, in the intracavity field.
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Submitted 1 March, 2011;
originally announced March 2011.
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Selective photoexcitation of exciton-polariton vortices
Authors:
Gaël Nardin,
Konstantinos G. Lagoudakis,
Barbara Pietka,
François Morier-Genoud,
Yoan Léger,
Benoît Deveaud-Plédran
Abstract:
We resonantly excite exciton-polariton states confined in cylindrical traps. Using a homodyne detection setup, we are able to image the phase and amplitude of the confined polariton states. We evidence the excitation of vortex states, carrying an integer angular orbital momentum m, analogous to the transverse TEM01* "donut" mode of cylindrically symmetric optical resonators. Tuning the excitation…
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We resonantly excite exciton-polariton states confined in cylindrical traps. Using a homodyne detection setup, we are able to image the phase and amplitude of the confined polariton states. We evidence the excitation of vortex states, carrying an integer angular orbital momentum m, analogous to the transverse TEM01* "donut" mode of cylindrically symmetric optical resonators. Tuning the excitation conditions allows us to select the charge of the vortex. In this way, the injection of singly charged (m = 1 & m = -1) and doubly charged (m = 2) polariton vortices is shown. This work demonstrates the potential of in-plane confinement coupled with selective excitation for the topological tailoring of polariton wavefunctions.
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Submitted 30 May, 2010; v1 submitted 6 January, 2010;
originally announced January 2010.
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Optical manipulation of the wave function of quasiparticles in a solid
Authors:
R. Cerna,
D. Sarchi,
T. K. Paraiso,
G. Nardin,
Y. Leger,
M. Richard,
B. Pietka,
O. El Daif,
F. Morier-Genoud,
V. Savona,
M. T. Portella-Oberli,
B. Deveaud-Pledran
Abstract:
Polaritons in semiconductor microcavities are hybrid quasiparticles consisting of a superposition of photons and excitons. Due to the photon component, polaritons are characterized by a quantum coherence length in the several micron range. Owing to their exciton content, they display sizeable interactions, both mutual and with other electronic degrees of freedom. These unique features have produ…
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Polaritons in semiconductor microcavities are hybrid quasiparticles consisting of a superposition of photons and excitons. Due to the photon component, polaritons are characterized by a quantum coherence length in the several micron range. Owing to their exciton content, they display sizeable interactions, both mutual and with other electronic degrees of freedom. These unique features have produced striking matter wave phenomena, such as Bose-Einstein condensation, or parametric processes able to generate quantum entangled polariton states. Recently, several paradigms for spatial confinement of polaritons in semiconductor devices have been established. This opens the way to quantum devices in which polaritons can be used as a vector of quantum information. An essential element of each quantum device is the quantum state control. Here we demonstrate control of the wave function of confined polaritons, by means of tailored resonant optical excitation. By tuning the energy and momentum of the laser, we achieve precise control of the momentum pattern of the polariton wave function. A theoretical model supports unambiguously our observations.
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Submitted 28 April, 2009;
originally announced April 2009.
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Optical probing of spin fluctuations of a single magnetic atom
Authors:
L. Besombes,
Y. Leger,
J. Bernos,
H. Boukari,
H. Mariette,
J. Fernandez-Rossier,
R. Aguado
Abstract:
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in an individual semiconductor quantum dot. The statistics of the photons emitted by the quantum dot reflect the quantum fluctuations of the localized spin interacting with the injected carriers. Photon correlation measurements which are reported here reveal unique signatures of these fluctuations.…
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We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in an individual semiconductor quantum dot. The statistics of the photons emitted by the quantum dot reflect the quantum fluctuations of the localized spin interacting with the injected carriers. Photon correlation measurements which are reported here reveal unique signatures of these fluctuations. A phenomenological model is proposed to quantitatively describe these observations, allowing a measurement of the spin dynamics of an individual magnetic atom at zero magnetic field. These results demonstrate the existence of an efficient spin relaxation channel arising from a spin-exchange with individual carriers surrounding the quantum dot. A theoretical description of a spin-flip mechanism involving spin exchange with surrounding carriers gives relaxation times in good agreement with the measured dynamics.
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Submitted 31 July, 2008;
originally announced July 2008.
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Fine structure of exciton excited levels in a quantum dot with a magnetic ion
Authors:
M. M. Glazov,
E. L. Ivchenko,
L. Besombes,
Y. Leger,
L. Maingault,
H. Mariette
Abstract:
The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the anisotropic long-range electron-hole exchange interaction in the zero-dimensional exciton, and the exchange interaction of the electron and the hole with the $d$-ele…
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The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the anisotropic long-range electron-hole exchange interaction in the zero-dimensional exciton, and the exchange interaction of the electron and the hole with the $d$-electrons of a Mn ion inserted inside the dot. Depending on the relation between the quantum dot anisotropy and the exciton-Mn coupling the photoluminescence excitation spectrum has a qualitatively different behavior. It provides a deep insight into the spin structure of the excited excitonic states.
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Submitted 25 November, 2006;
originally announced November 2006.
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Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom
Authors:
Y. Leger,
L. Besombes,
L. Maingault,
D. Ferrand,
H. Mariette
Abstract:
The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal…
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The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton-manganese exchange interaction (dependent on the Mn position) and the anisotropic part of the electron-hole exchange interaction (related to the asymmetry of the quantum dot).
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Submitted 7 July, 2005;
originally announced July 2005.
