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Pseudospin-phonon pretransitional dynamics in lead halide hybrid perovskites
Authors:
B. Hehlen,
P. Bourges,
B. Rufflé,
1 S. Clément,
R. Vialla,
A. C. Ferreira,
C. Ecolivet,
S. Paofai,
S. Cordier,
C. Katan,
A. Létoublon,
J. Even
Abstract:
The low frequency lattice vibrations and relaxations are investigated in single crystals of the four 3D hybrid organolead perovskites, MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$, and $α$-FAPbI$_3$, at the Brillouin zone center using Raman and Brillouin scattering and at the zone boundary using inelastic neutron scattering. The temperature dependence of the PbX$_6$ lattice modes in the four compounds can be…
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The low frequency lattice vibrations and relaxations are investigated in single crystals of the four 3D hybrid organolead perovskites, MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$, and $α$-FAPbI$_3$, at the Brillouin zone center using Raman and Brillouin scattering and at the zone boundary using inelastic neutron scattering. The temperature dependence of the PbX$_6$ lattice modes in the four compounds can be renormalized into universal curves, highlighting a common vibrational dynamics at the cubic to tetragonal transition. In particular, no soft vibration is observed excluding a displacive-like transitional dynamics. The reorientational (pseudospin) motions of the molecular cations exhibit a seemingly order-disorder character recalling that of plastic crystals, but attributed to a secondary order-parameter. At ultra-low frequency, a quasi-elastic component evidenced by Brillouin scattering and associated to the unresolved central peak observed in neutron scattering, is attributed to center of mass anharmonic motions and rattling of the molecular cations in the perovskite cavities. Its partially unexpressed critical behavior at the transition points toward the general importance of defects in HOPs preventing the net divergence of order parameter correlations at the critical temperatures.
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Submitted 14 January, 2022; v1 submitted 31 October, 2021;
originally announced November 2021.
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Authors:
Lipin Chen,
Mahdi Alqahtani,
Christophe Levallois,
Antoine Létoublon,
Julie Stervinou,
Rozenn Piron,
Soline Boyer-Richard,
Jean-Marc Jancu,
Tony Rohel,
Rozenn Bernard,
Yoan Léger,
Nicolas Bertru,
Jiang Wu,
Ivan P. Parkin,
Charles Cornet
Abstract:
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption…
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Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.
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Submitted 7 February, 2020;
originally announced February 2020.
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Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites
Authors:
A. C. Ferreira,
S. Paofai,
A. Létoublon,
J. Ollivier,
S. Raymond,
B. Hehlen,
B. Rufflé,
S. Cordier,
C. Katan,
J. Even,
P. Bourges
Abstract:
Hybrid organolead perovskites (HOP) have started to establish themselves in the field of photovoltaics, mainly due to their great optoelectronic properties and steadily improving solar cell efficiency. Study of the lattice dynamics is key in understanding the electron-phonon interactions at play, responsible for such properties. Here, we investigate, via neutron and Raman spectroscopies, the optic…
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Hybrid organolead perovskites (HOP) have started to establish themselves in the field of photovoltaics, mainly due to their great optoelectronic properties and steadily improving solar cell efficiency. Study of the lattice dynamics is key in understanding the electron-phonon interactions at play, responsible for such properties. Here, we investigate, via neutron and Raman spectroscopies, the optical phonon spectrum of four different HOP single crystals: MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$, and $α$-FAPbI$_3$. Low temperature spectra reveal weakly dispersive optical phonons, at energies as low as 2-5~meV, which seem to be the origin of the limit of the charge carriers mobilities in these materials. The temperature dependence of our neutron spectra shows as well a significant anharmonic behaviour, resulting in optical phonon overdamping at temperatures as low as 80~K, questionning the validity of the quasi-particle picture for the low energy optical modes at room temperature where the solar cells operate.
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Submitted 7 February, 2020; v1 submitted 15 January, 2020;
originally announced January 2020.
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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
Authors:
C. Cornet,
S. Charbonnier,
I. Lucci,
L. Chen,
A. Letoublon,
A. Alvarez,
K. Tavernier,
T. Rohel,
R. Bernard,
J. -B. Rodriguez,
L. Cerutti,
E. Tournie,
Y. Leger,
G. Patriarche,
L. Largeau,
A. Ponchet,
P. Turban,
N. Bertru
Abstract:
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th…
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Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.
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Submitted 15 January, 2020;
originally announced January 2020.
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A universal description of III-V/Si epitaxial growth processes
Authors:
I. Lucci,
S. Charbonnier,
L. Pedesseau,
M. Vallet,
L. Cerutti,
J. -B. Rodriguez,
E. Tournie,
R. Bernard,
A. Letoublon,
N. Bertru,
A. Le Corre,
S. Rennesson,
F. Semond,
G. Patriarche,
L. Largeau,
P. Turban,
A. Ponchet,
C. Cornet
Abstract:
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations a…
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Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
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Submitted 6 April, 2018;
originally announced April 2018.
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Elastic softness of hybrid lead halide perovskites
Authors:
A. C. Ferreira,
A. Létoublon,
S. Paofai,
S. Raymond,
C. Ecolivet,
B. Rufflé,
S. Cordier,
C. Katan,
M. I. Saidaminov,
A. A. Zhumekenov,
O. M. Bakr,
J. Even,
Ph. Bourges
Abstract:
Much recent attention has been devoted towards unravelling the microscopic optoelectronic properties of hybrid organic-inorganic perovskites (HOP). Here we investigate by coherent inelastic neutron scattering spectroscopy and Brillouin light scattering, low frequency acoustic phonons in four different hybrid perovskite single crystals: MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$ and $α$-FAPbI$_3$ (MA: methy…
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Much recent attention has been devoted towards unravelling the microscopic optoelectronic properties of hybrid organic-inorganic perovskites (HOP). Here we investigate by coherent inelastic neutron scattering spectroscopy and Brillouin light scattering, low frequency acoustic phonons in four different hybrid perovskite single crystals: MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$ and $α$-FAPbI$_3$ (MA: methylammonium, FA: formamidinium). We report a complete set of elastic constants caracterized by a very soft shear modulus C$_{44}$. Further, a tendency towards an incipient ferroelastic transition is observed in FAPbBr$_3$. We observe a systematic lower sound group velocity in the technologically important iodide-based compounds compared to the bromide-based ones. The findings suggest that low thermal conductivity and hot phonon bottleneck phenomena are expected to be enhanced by low elastic stiffness, particularly in the case of the ultrasoft $α$-FAPbI$_3$.
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Submitted 26 January, 2018;
originally announced January 2018.
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Self-Organized Growth of Nanoparticles on a Surface Patterned by a Buried Dislocation Network
Authors:
F. Leroy,
G. Renaud,
A. Letoublon,
R. Lazzari,
C. Mottet,
J. Goniakowski
Abstract:
The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown by real time, in situ Grazing Incidence Small and Wide Angle X-ray Scattering. The misfit dislocation network, buried at the interface between a 5nm-thick Ag thin film and a MgO(001) substrate, induces a periodic strai…
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The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown by real time, in situ Grazing Incidence Small and Wide Angle X-ray Scattering. The misfit dislocation network, buried at the interface between a 5nm-thick Ag thin film and a MgO(001) substrate, induces a periodic strain field on top of the surface. Nucleation and growth of Co on tensile areas are found as the most favorable sites as highlighted by Molecular Dynamic simulations.
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Submitted 22 July, 2007;
originally announced July 2007.
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Diffraction Anomalous Fine Structure spectroscopy at the beamline BM2 at the European Synchrotron Radiation Facility
Authors:
H. Renevier,
S. Grenier,
S. Arnaud,
J. F. Berar,
B. Caillot,
J. L. Hodeau,
A. Letoublon,
M. G. Proietti,
B. Ravel
Abstract:
Diffraction Anomalous Fine Structure (DAFS) spectroscopy uses resonant elastic x-rays scattering as an atomic, shell and site selective probe that gives information on the electronic structure and the local atomic environment as well as on the long range ordered crystallographic structure. A DAFS experiment consists of measuring the Bragg peak intensities as a function of the energy of the incom…
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Diffraction Anomalous Fine Structure (DAFS) spectroscopy uses resonant elastic x-rays scattering as an atomic, shell and site selective probe that gives information on the electronic structure and the local atomic environment as well as on the long range ordered crystallographic structure. A DAFS experiment consists of measuring the Bragg peak intensities as a function of the energy of the incoming x-ray beam. The French CRG (Collaborative Research Group) beamline BM2-D2AM (Diffraction Diffusion Anomale Multi-longueurs d'onde) at the ESRF (European Synchrotron Radiation Facility) has developed a state of the art energy scan diffraction set-up. In this article, we present the requirements for obtaining reliable DAFS data and report recent technical achievements.
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Submitted 26 September, 2003;
originally announced September 2003.
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Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction
Authors:
A. Letoublon,
V. Favre-Nicolin,
H. Renevier,
M. G. Proietti,
C. Monat,
M. Gendry,
O. Marty,
C. Priester
Abstract:
We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs…
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We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs. Finite Difference Method calculations reproduce well the diffraction data, and give the strain along the growth direction. Chemical mixing at interfaces is at most of 1ML
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Submitted 24 September, 2003; v1 submitted 23 September, 2003;
originally announced September 2003.
