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Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by X-ray and ultraviolet photoelectron spectroscopy
Authors:
Y. Lu,
J. C. Le Breton,
P. Turban,
B. Lépine,
P. Schieffer,
G. Jézéquel
Abstract:
The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe…
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The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al deposition lead to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defects states at the MgO/GaAs interface.
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Submitted 7 April, 2020;
originally announced April 2020.
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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
Authors:
C. Cornet,
S. Charbonnier,
I. Lucci,
L. Chen,
A. Letoublon,
A. Alvarez,
K. Tavernier,
T. Rohel,
R. Bernard,
J. -B. Rodriguez,
L. Cerutti,
E. Tournie,
Y. Leger,
G. Patriarche,
L. Largeau,
A. Ponchet,
P. Turban,
N. Bertru
Abstract:
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th…
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Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.
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Submitted 15 January, 2020;
originally announced January 2020.
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A universal description of III-V/Si epitaxial growth processes
Authors:
I. Lucci,
S. Charbonnier,
L. Pedesseau,
M. Vallet,
L. Cerutti,
J. -B. Rodriguez,
E. Tournie,
R. Bernard,
A. Letoublon,
N. Bertru,
A. Le Corre,
S. Rennesson,
F. Semond,
G. Patriarche,
L. Largeau,
P. Turban,
A. Ponchet,
C. Cornet
Abstract:
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations a…
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Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
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Submitted 6 April, 2018;
originally announced April 2018.
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Multi-dimensional Tensor Network Simulation of Open Quantum Dynamics in Singlet Fission
Authors:
Florian A. Y. N. Schröder,
David H. P. Turban,
Andrew J. Musser,
Nicholas D. M. Hine,
Alex W. Chin
Abstract:
We develop a powerful tree tensor network states method that is capable of simulating exciton-phonon quantum dynamics of larger molecular complexes and open quantum systems with multiple bosonic environments. We interface this method with ab initio density functional theory to study singlet exciton fission (SF) in a pentacene dimer. With access to the full vibronic many-body wave function, we trac…
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We develop a powerful tree tensor network states method that is capable of simulating exciton-phonon quantum dynamics of larger molecular complexes and open quantum systems with multiple bosonic environments. We interface this method with ab initio density functional theory to study singlet exciton fission (SF) in a pentacene dimer. With access to the full vibronic many-body wave function, we track and assign the contributions of different symmetry classes of vibrations to SF and derive energy surfaces, enabling us to dissect, understand, and describe the strongly coupled electronic and vibrational dynamics, relaxation, and reduced state cooling. This directly exposes the rich possibilities of exploiting the functional interplay of molecular symmetry, electronic structure and vibrational dynamics in SF material design. The described method can be similarly applied to other complex (bio-) molecular systems, characterised by a rich manifold of electronic states and vibronic coupling driving non-adiabatic dynamics.
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Submitted 3 October, 2017;
originally announced October 2017.
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Evidence that rotons in helium II are interstitial atoms
Authors:
Robert M Brady,
Edward T Samulski,
David H P Turban
Abstract:
Superfluid helium II contains excitations known as rotons. Their properties have been studied experimentally for more than 70 years but their structure is not fully understood. Feynman's 1954 description, involving rotating flow patterns, does not fully explain later experimental data. Here we identify volumetric, thermodynamic, colloidal, excitation, x-ray and neutron scattering evidence that rot…
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Superfluid helium II contains excitations known as rotons. Their properties have been studied experimentally for more than 70 years but their structure is not fully understood. Feynman's 1954 description, involving rotating flow patterns, does not fully explain later experimental data. Here we identify volumetric, thermodynamic, colloidal, excitation, x-ray and neutron scattering evidence that rotons are composed of interstitial helium atoms. We show in particular that they have the same mass, effective mass and activation energy within experimental accuracy. They readily move through the substrate, and couple through lattice vibrations to produce quantized, loss-free flow which corresponds to the observed superflow. Our observations revive London's 1936 conclusion that helium II has a relatively open crystal-like lattice with enough free volume for atoms to move relative to one another, and reconcile it with London's 1938 description of a quantum fluid.
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Submitted 29 June, 2017;
originally announced June 2017.
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Supercell convergence of charge-transfer energies in pentacene molecular crystals from constrained DFT
Authors:
David H. P. Turban,
Gilberto Teobaldi,
David D. O'Regan,
Nicholas D. M. Hine
Abstract:
Singlet fission (SF) is a multi-exciton generation process that could be harnessed to improve the efficiency of photovoltaic devices. Experimentally, systems derived from the pentacene molecule have been shown to exhibit ultrafast SF with high yields. Charge-transfer (CT) configurations are likely to play an important role as intermediates in the SF process in these systems. In molecular crystals,…
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Singlet fission (SF) is a multi-exciton generation process that could be harnessed to improve the efficiency of photovoltaic devices. Experimentally, systems derived from the pentacene molecule have been shown to exhibit ultrafast SF with high yields. Charge-transfer (CT) configurations are likely to play an important role as intermediates in the SF process in these systems. In molecular crystals, electrostatic screening effects and band formation can be significant in lowering the energy of CT states, enhancing their potential to effectively participate in SF. In order to simulate these, it desirable to adopt a computational approach which is acceptably accurate, relatively inexpensive, which and scales well to larger systems, thus enabling the study of screening effects. We propose a novel, electrostatically-corrected constrained Density Functional Theory (cDFT) approach as a low-cost solution to the calculation of CT energies in molecular crystals such as pentacene. Here we consider an implementation in the context of the ONETEP linear-scaling DFT code, but our electrostatic correction method is in principle applicable in combination with any constrained DFT implementation, also outside the linear-scaling framework. Our newly developed method allows us to estimate CT energies in the infinite crystal limit, and with these to validate the accuracy of the cluster approximation.
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Submitted 22 March, 2016; v1 submitted 7 March, 2016;
originally announced March 2016.
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Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy
Authors:
Marie Hervé,
Sylvain Tricot,
Sophie Guézo,
Gabriel Delhaye,
Bruno Lépine,
Philippe Schieffer,
Pascal Turban
Abstract:
We demonstrate quantitative ballistic electron magnetic microscopy (BEMM) imaging of simple model Fe(001) nanostructures. We use in situ nanostencil shadow mask resistless patterning combined with molecular beam epitaxy deposition to prepare under ultra-high vacuum conditions nanostructured epitaxial Fe/Au/Fe/GaAs(001) spin-valves. In this epitaxial system, the magnetization of the bottom Fe/GaAs(…
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We demonstrate quantitative ballistic electron magnetic microscopy (BEMM) imaging of simple model Fe(001) nanostructures. We use in situ nanostencil shadow mask resistless patterning combined with molecular beam epitaxy deposition to prepare under ultra-high vacuum conditions nanostructured epitaxial Fe/Au/Fe/GaAs(001) spin-valves. In this epitaxial system, the magnetization of the bottom Fe/GaAs(001) electrode is parallel to the [110] direction, defining accurately the analysis direction for the BEMM experiments. The large hot-electron magnetoresistance of the Fe/Au/Fe/GaAs(001) epitaxial spin-valve allows us to image various stable magnetic configurations on the as-grown Fe(001) microstructures with a high sensitivity, even for small misalignments of both magnetic electrodes. The angular dependence of the hot-electron magnetocurrent is used to convert magnetization maps calculated by micromagnetic simulations into simulated BEMM images. The calculated BEMM images and magnetization rotation profiles show quantitative agreement with experiments and allow us to investigate the magnetic phase diagram of these model Fe(001) microstructures. Finally, magnetic domain reversals are observed under high current density pulses. This opens the way for further BEMM investigations of current-induced magnetization dynamics.
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Submitted 19 July, 2013;
originally announced July 2013.
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Elastic relaxation during 2D epitaxial growth: a study of in-plane lattice spacing oscillations
Authors:
P. Muller,
P. turban,
L. Lapena,
S. Andrieu
Abstract:
The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these oscillations comes from the finite size of the strained islands. The 2D islands may thus relax by their edges, leading to in-plane lattice spacing oscillations du…
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The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these oscillations comes from the finite size of the strained islands. The 2D islands may thus relax by their edges, leading to in-plane lattice spacing oscillations during the birth and spread of these islands. On the one hand, we formulate the problem of elastic relaxation of a coherent 2D epitaxial deposits by using the concept of point forces and demonstrate that the mean deformation in the islands exhibits an oscillatory behaviour. On the other hand, we calculate the intensity diffracted by such coherently deposited 2D islands by using a mean model of a pile-up of weakly deformed layers. The amplitude of in-plane lattice spacing oscillations is found to depend linearly on the misfit and roughly linearly on the nucleation density. We show that the nucleation density may be approximated from the full-width at half maximum of the diffracted rods at half coverages. The predicted dependence of the in-plane lattice spacing oscillations amplitude with the nucleation density is thus experimentally verified on V/Fe(001), Mn/Fe(001), Ni/Fe(001), Co/Cu(001) and V/V(001).
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Submitted 28 June, 2007;
originally announced June 2007.
