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Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures and Fermi levels
Authors:
L. Chen,
L. Pedesseau,
Y. Léger,
N. Bertru,
J. Even,
C. Cornet
Abstract:
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based on first-principle calculations. Especially, we demonstrate how the ladder or zigzag chemical bond configuration can lead for the different cases to…
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Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based on first-principle calculations. Especially, we demonstrate how the ladder or zigzag chemical bond configuration can lead for the different cases to a gapped semiconducting band structure, to a gapped metallic band structure or to a non-gapped metallic band structure. Besides, we evidence that the ladder APB configurations impact more significantly the Fermi energy levels than the zigzag APB configurations. We finally discuss how these different band structures can have some consequences on the operation of monolithic III-V/Si devices for photonics or energy harvesting.
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Submitted 3 June, 2022;
originally announced June 2022.
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Authors:
Lipin Chen,
Mahdi Alqahtani,
Christophe Levallois,
Antoine Létoublon,
Julie Stervinou,
Rozenn Piron,
Soline Boyer-Richard,
Jean-Marc Jancu,
Tony Rohel,
Rozenn Bernard,
Yoan Léger,
Nicolas Bertru,
Jiang Wu,
Ivan P. Parkin,
Charles Cornet
Abstract:
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption…
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Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.
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Submitted 7 February, 2020;
originally announced February 2020.
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Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
Authors:
C. Cornet,
S. Charbonnier,
I. Lucci,
L. Chen,
A. Letoublon,
A. Alvarez,
K. Tavernier,
T. Rohel,
R. Bernard,
J. -B. Rodriguez,
L. Cerutti,
E. Tournie,
Y. Leger,
G. Patriarche,
L. Largeau,
A. Ponchet,
P. Turban,
N. Bertru
Abstract:
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th…
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Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.
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Submitted 15 January, 2020;
originally announced January 2020.
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A universal description of III-V/Si epitaxial growth processes
Authors:
I. Lucci,
S. Charbonnier,
L. Pedesseau,
M. Vallet,
L. Cerutti,
J. -B. Rodriguez,
E. Tournie,
R. Bernard,
A. Letoublon,
N. Bertru,
A. Le Corre,
S. Rennesson,
F. Semond,
G. Patriarche,
L. Largeau,
P. Turban,
A. Ponchet,
C. Cornet
Abstract:
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations a…
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Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.
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Submitted 6 April, 2018;
originally announced April 2018.
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Shape control of QDs studied by cross-sectional scanning tunneling microscopy
Authors:
J. G. Keizer,
M. Bozkurt,
J. Bocquel,
P. M. Koenraad,
T. Mano,
T. Noda,
K. Sakoda,
E. C. Clark,
M. Bichler,
G. Abstreiter,
J. J. Finley,
W. Lu,
T. Rohel,
H. Folliot,
N. Bertru
Abstract:
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thicknes…
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In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first capping layer. Concerning the technique of antimony capping we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.
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Submitted 15 November, 2010;
originally announced November 2010.
