Showing 1–50 of 56 results for author: Diény, B

Comparison of stable spin textures in in-plane vs. out-of-plane magnetized exchange-biased multilayers

Authors: Bernard Dieny, Olivier Fruchart, Ernesto E. Marinero

Abstract: This paper delves into the origins and specificity of the unique stable spin textures (360° closed loop domain walls and skyrmions) observed in exchange-biased systems, with either in-plane or out-of-plane magnetic anisotropy. In the case of skyrmions, which are nanometer-sized bubbles consisting of closed-loop 180° walls in perpendicularly-magnetized media, the stability of these spin textures ar… ▽ More This paper delves into the origins and specificity of the unique stable spin textures (360° closed loop domain walls and skyrmions) observed in exchange-biased systems, with either in-plane or out-of-plane magnetic anisotropy. In the case of skyrmions, which are nanometer-sized bubbles consisting of closed-loop 180° walls in perpendicularly-magnetized media, the stability of these spin textures arises from the existence of Dzyaloshinskii-Moriya Interactions (DMI). These interactions induce chirality of the domain walls, yielding to some extent a so-called topological protection. More complex structures such as skyrmoniums have been observed, consisting of closed loop 360° walls. Recently, skyrmions formed in the absence of an applied external magnetic field have been stabilized in exchange biased out-of-plane magnetized systems. About two decades ago, another type of stable spin-textures were observed in exchange biased systems, with in-plane magnetization, in particular in the pinned reference layer of spin-valves. These textures consist of 360°-domain-wall rings, the stability of which arises from the easy-plane shape anisotropy of these layers. In this paper, we compare these spin-textures and highlight the similarities and differences in their formation, structure and origin of their stability. △ Less

Submitted 12 February, 2024; originally announced February 2024.

Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk

Authors: N. Caçoilo, L. D. Buda-Prejbeanu, B. Dieny, O. Fruchart, I. L. Prejbeanu

Abstract: The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotro… ▽ More The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Comments: 11 pages, 11 figures,

Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions

Authors: Sucheta Mondal, Debanjan Polley, Akshay Pattabi, Jyotirmoy Chatterjee, David Salomoni, Luis Aviles-Felix, Aurélien Olivier, Miguel Rubio-Roy, Bernard Diény, Liliana Daniela Buda Prejbeanu, Ricardo Sousa, Ioan Lucian Prejbeanu, Jeffrey Bokor

Abstract: Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magneti… ▽ More Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magnetization of the storage layer (SL). The change in magnetoresistance between the SL and a reference layer (RL) is probed electrically across the tunnel barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The switching dynamics in a continuous film is probed with the magneto-optical Kerr effect technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices. △ Less

Submitted 18 December, 2022; originally announced December 2022.

Comments: total pages 22, Total figure 8

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices

Authors: Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper

Abstract: Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of… ▽ More Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating. The experimental practicalities, benefits and limits of using electron holography for analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity. △ Less

Submitted 21 April, 2022; originally announced April 2022.

Comments: 22 pages, 7 figures

Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars

Authors: Trevor P. Almeida, Steven Lequeux, Alvaro Palomino, Ricardo C. Sousa, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, Aurélien Masseboeuf, David Cooper

Abstract: Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic… ▽ More Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM nano-pillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature, which has been previously inaccessible. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (60 nm high, 20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In-situ heating demonstrates that the PSA of the FeCoB / NiFe composite storage layer is maintained up to at least 250 degrees centigrade, and direct quantitative measurements reveal the very moderate decrease of magnetic induction with temperature. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy

Authors: A. Sidi El Valli, V. Iurchuk, G. Lezier, I. Bendjeddou, R. Lebrun, N. Lamard, A. Litvinenko, J. Langer, J. Wrona, L. Vila, R. Sousa, I. L. Prejbeanu, B. Dieny, U. Ebels

Abstract: Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free laye… ▽ More Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free layer thickness is adjusted so that its magnetization orientation changes from in plane to out of plane. The rectification dc output voltage lies in the mV range for moderate rf powers, with a signal to noise ratio of 10 to 100 for Prf = -25dBm. It shows a strong dependence on the dimensions of the MTJ: it increases by a factor of 5 to 6 when reducing the diameter from 150nm to 20nm. This enhancement can be doubled when reducing the FL thickness from 1.8nm to 1.6nm. This dimensional enhancement is attributed to the change of the effective anisotropy of the excited free layer, and the MTJ resistance. The results are of interest for the design of spintronic based rf detectors with optimized sensitivity. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Mutual Synchronization of Spin-Torque Oscillators within a Ring Array

Authors: M. A. Castro, D. Mancilla-Almonacid, B. Dieny, S. Allende, L. D. Buda-Prejbeanu, U. Ebels

Abstract: An array of spin torque nano-oscillators (STNOs), coupled by dipolar interaction and arranged on a ring, has been studied numerically and analytically. The phase patterns and locking ranges are extracted as a function of the number $N$, their separation, and the current density mismatch between selected subgroups of STNOs. If $N\geq 6$ for identical current densities through all STNOs, two degener… ▽ More An array of spin torque nano-oscillators (STNOs), coupled by dipolar interaction and arranged on a ring, has been studied numerically and analytically. The phase patterns and locking ranges are extracted as a function of the number $N$, their separation, and the current density mismatch between selected subgroups of STNOs. If $N\geq 6$ for identical current densities through all STNOs, two degenerated modes are identified an in-phase mode (all STNOs have the same phase) and an out-of-phase mode (the phase makes a 2$π$ turn along the ring). When inducing a current density mismatch between two subgroups, additional phase shifts occur. The locking range (maximum current density mismatch) of the in-phase mode is larger than the one for the out-of-phase mode and depends on the number $N$ of STNOs on the ring as well as on the separation. These results can be used for the development of magnetic devices that are based on STNO arrays. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Target domains in nanometric Permalloy disks with columnar structure

Authors: Svetlana Ponomareva, Robert Morel, Hélène Joisten, Philippe Sabon, Bernard Dieny

Abstract: We conducted a thorough experimental and numerical study of the micromagnetic properties of Permalloy (Ni$_{80}$Fe$_{20}$) microdisks exhibiting target domain structures at remanence. Vortex configurations are quite common in such microdisks and correspond to an in-plane flux closure configuration of cylindrical symmetry with an out-of-plane magnetized core. In contrast, target domain configuratio… ▽ More We conducted a thorough experimental and numerical study of the micromagnetic properties of Permalloy (Ni$_{80}$Fe$_{20}$) microdisks exhibiting target domain structures at remanence. Vortex configurations are quite common in such microdisks and correspond to an in-plane flux closure configuration of cylindrical symmetry with an out-of-plane magnetized core. In contrast, target domain configuration are observed in thicker microdisks and are characterized by a vortex configuration of the in-plane component of the magnetization superposed to an out-of-plane component of magnetization which oscillates as a function of the distance to the microdisk center resulting in the formation of concentric domains. The ratio of the out-of-plane oscillatory component of the magnetization to the in-plane vortex one increases with the thickness of the microdisk. Hysteresis loops were measured under in-plane and out-of-plane field. The results at remanence and under magnetic field could be interpreted by micromagnetic simulations in which the microdisks were described as an assembly of partially coupled columns representing the granular nanostructure of the films from which the microdisks were patterned. Quite original magnetization processes take place in these microdisks exhibiting target domain remanent configuration. These include in particular entire flipping of the domain configuration and annihilation/creation of ring domains. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 17 pages, 11 figures

All-optical spin switching probability in [Tb/Co] multilayers

Authors: Luis Avilés-Félix, Louis Farcis, Zebin Jin, Laura Álvaro-Gómez, Gunqiao Li, Kihiro T. Yamada, Andrei Kirilyuk, Aleksey V. Kimel, Theo Rasing, Bernard Dieny, Ricardo C. Sousa, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu

Abstract: Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alte… ▽ More Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the damping parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 9 pages, 4 figures

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

Authors: Fatima Ibrahim, Ali Hallal, Alan Kalitsov, Derek Stewart, Bernard Dieny, Mairbek Chshiev

Abstract: The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial… ▽ More The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind the experiments reporting deviations from the Callen and Callen scaling power law are analyzed. At ideal interfaces, first-principles calculations reveal (i) small high-order anisotropy constants compared to first order and (ii) enhanced exchange constants. Considering these two intrinsic effects in the atomistic simulations, the temperature-dependence of the total and layer-resolved anisotropy are found to follow the Callen and Callen scaling power law, thus ruling out an intrinsic microscopic mechanism underlying deviations from this law. Besides, two possible extrinsic macroscopic mechanisms are unveiled namely the influence of the dead layer, often present in the storage layer of STT-MRAM cells, and the spatial inhomogeneities of the interfacial magnetic anisotropy. About the first mechanism, we show that the presence of a dead layer tends to reduce the scaling exponents. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling exponent. These results allow us to explain the difference in scaling exponents relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications. △ Less

Submitted 27 May, 2022; v1 submitted 4 November, 2020; originally announced November 2020.

Comments: 12 pages, 15 figures

Journal ref: Phys. Rev. Applied 17, 054041 (2022)

Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Authors: Libor Vojáček, Fatima Ibrahim, Ali Hallal, Bernard Dieny, Mairbek Chshiev

Abstract: Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage l… ▽ More Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Comments: 20 pages, 3 figures and supporting information

Journal ref: Phys. Rev. Applied 15, 024017 (2021)

Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions

Authors: N. Caçoilo, S. Lequeux, B. M. S. Teixeira, B. Dieny, R. C. Sousa, N. A. Sobolev, O. Fruchart, I. L. Prejbeanu, L. D. Buda-Prejbeanu

Abstract: The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technologica… ▽ More The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios. △ Less

Submitted 21 April, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 7 pages with a total of 8 figures

Journal ref: Phys. Rev. Applied 16, 024020 (2021)

Opportunities and challenges for spintronics in the microelectronic industry

Authors: Bernard Dieny, Ioan Lucian Prejbeanu, Kevin Garello, Pietro Gambardella, Paulo Freitas, Ronald Lehndorff, Wolfgang Raberg, Ursula Ebels, Sergej O Demokritov, Johan Akerman, Alina Deac, Philipp Pirro, Christoph Adelmann, Abdelmadjid Anane, Andrii V Chumak, Atsufumi Hiroata, Stephane Mangin, Mehmet Cengiz Onbasli, Massimo d Aquino, Guillaume Prenat, Giovanni Finocchio, Luis Lopez Diaz, Roy Chantrell, Oksana Chubykalo Fesenko, Paolo Bortolotti

Abstract: Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, an… ▽ More Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms. △ Less

Submitted 28 August, 2019; originally announced August 2019.

Comments: Review written by the SpinFactory European Consortium

Analog and digital phase modulation of spin torque nano-oscillators

Authors: A. Litvinenko, P. Sethi, C. Murapaka, A. Jenkins, V. Cros, P. Bortolotti, R. Ferreria, B. Dieny, U. Ebels

Abstract: Spin torque nano-oscillators (STNO) are nanoscale devices with wide band frequency tunability. Their multifunctional RF properties are well suited to define novel schemes for wireless communications that use basic protocols for data transmission such as amplitude, frequency and phase shift keying (ASK, FSK, PSK). In contrast to ASK and FSK, implementation of PSK is more challenging for STNOs becau… ▽ More Spin torque nano-oscillators (STNO) are nanoscale devices with wide band frequency tunability. Their multifunctional RF properties are well suited to define novel schemes for wireless communications that use basic protocols for data transmission such as amplitude, frequency and phase shift keying (ASK, FSK, PSK). In contrast to ASK and FSK, implementation of PSK is more challenging for STNOs because of their relatively high phase noise. Here we introduce a special PSK technique by combining their modulation and injection locking functionality. The concept is validated using magnetic tunnel junction based vortex STNOs for injection locking at 2f and f/2 showing phase shifts up to 2.1rad and data transmission rates up to 4Mbit/s. Quadrature phase shift keying and analog phase modulation are also implemented, where the latter is employed for voice transmission over a distance of 10 meters. This demonstrates that STNO phase noise and output power meet the requested performances for operation in existing communication schemes. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Comments: to be submitted

Journal ref: Phys. Rev. Applied 16, 024048 (2021)

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Authors: N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o… ▽ More A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Giant variation of the perpendicular magnetic anisotropy at Fe/MgO interfaces by oxygen migration: a first-principles study

Authors: F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev

Abstract: A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained… ▽ More A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained variation of the VCMA efficiency factor $β$ reveals a saturation limit beyond a critical concentration of migrated O, about $54\%$, at which the anisotropy switches from perpendicular to in plane. Furthermore, depending on the range of variation of the applied voltage, two regimes associated with reversible or irreversible ions displacement are predicted to occur, yielding different VCMA response. According to our findings, one can distinguish from the order of magnitude of $β$ the VCMA driving mechanism: an effect of several tens of fJ/(V.m) is likely associated to charge-mediated effect combined with slight reversible oxygen displacements whereas an effect of the order of thousands of fJ/(V.m) is more likely associated with irreversible oxygen ionic migration. △ Less

Submitted 27 December, 2018; v1 submitted 27 October, 2016; originally announced October 2016.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 98, 214441 (2018)

Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

Authors: A. Chavent, C. Ducruet, C. Portemont, L. Vila, J. Alvarez-Hérault, R. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias v… ▽ More Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing. △ Less

Submitted 27 September, 2016; originally announced September 2016.

Comments: 6 pages, 9 figures

Journal ref: Phys. Rev. Applied 6, 034003 (2016)

Exchange stiffness in ultrathin perpendicularly-magnetized CoFeB layers determined using spin wave spectroscopy

Authors: T. Devolder, J. -V. Kim, L. Nistor, R. Sousa, B. Rodmacq, B. Diény

Abstract: We measure the frequencies of spin waves in nm-thick perpendicularly magnetized FeCoB systems, and model the frequencies to deduce the exchange stiffness of this material in the ultrathin limit. For this, we embody the layers in magnetic tunnel junctions patterned into circular nanopillars of diameters ranging from 100 to 300 nm and we use magneto-resistance to determine which rf-current frequenci… ▽ More We measure the frequencies of spin waves in nm-thick perpendicularly magnetized FeCoB systems, and model the frequencies to deduce the exchange stiffness of this material in the ultrathin limit. For this, we embody the layers in magnetic tunnel junctions patterned into circular nanopillars of diameters ranging from 100 to 300 nm and we use magneto-resistance to determine which rf-current frequencies are efficient in populating the spin wave modes. Micromagnetic calculations indicate that the ultrathin nature of the layer and the large wave vectors used ensure that the spin wave frequencies are predominantly determined by the exchange stiffness, such that the number of modes in a given frequency window can be used to estimate the exchange. For 1 nm layers the experimental data are consistent with an exchange stiffness A= 20 pJ/m, which is slightly lower that its bulk counterpart. The thickness dependence of the exchange stiffness has strong implications for the numerous situations that involve ultrathin films hosting strong magnetization gradients, and the micromagnetic description thereof. △ Less

Submitted 24 February, 2016; originally announced February 2016.

Comments: 5 pages, 4 figures, submitted to PRL

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Authors: A. A. Timopheev, R. Sousa, M. Chshiev, T. Nguyen, B. Dieny

Abstract: Magnetoresistance loops under in-plane applied field were measured on perpendicularly magnetized magnetic tunnel junction (pMTJ) pillars with nominal diameters ranging from 50 to 150 nm. By fitting the hard-axis magnetoresistance loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340K and 5K… ▽ More Magnetoresistance loops under in-plane applied field were measured on perpendicularly magnetized magnetic tunnel junction (pMTJ) pillars with nominal diameters ranging from 50 to 150 nm. By fitting the hard-axis magnetoresistance loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340K and 5K were determined. It is found that an accurate fitting is possible only if a second-order anisotropy term of the form $-K_{2}cos^4θ$, is added to the fitting model. This higher order contribution exists both in the free and reference layers and its sign is opposite to that of the first order anisotropy constant, $K_{1}$. At room temperatures the estimated $-K_{2}/K_{1}$ ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures altering the ground state of the reference layer from 'easy-axis' to 'easy-cone' regime. Easy-cone state has clear signatures in the shape of the hard-axis magnetoresistance loops. The same behavior was observed in all measured devices regardless of their diameter. The existence of this higher order anisotropy was confirmed experimentally on FeCoB/MgO sheet films by ferromagnetic resonance technique. It is of interfacial nature and is believed to be linked to spatial fluctuations at the nanoscale of the anisotropy parameter at the FeCoB/MgO interface, in agreement with Dieny-Vedyayev model. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

Authors: A. A. Timopheev, R. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny

Abstract: The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque inf… ▽ More The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current-field switching diagrams. It contrasts with the case of STT-switching in in-plane magnetized MTJ in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage-field STT switching diagrams experimentally measured on perpendicular MTJ pillars 36 nm in diameter, which exhibit macrospin-like behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in presence of STT-induced dynamics is also discussed. △ Less

Submitted 26 August, 2015; v1 submitted 2 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 92, 104430 (2015)

The 2014 Magnetism Roadmap

Authors: Robert L. Stamps, Stephan Breitkreutz, Johan Åkerman, Andrii V. Chumak, YoshiChika Otani, Gerrit E. W. Bauer, Jan-Ulrich Thiele, Martin Bowen, Sara A. Majetich, Mathias Kläui, Ioan Lucian Prejbeanu, Bernard Dieny, Nora M. Dempsey, Burkard Hillebrands

Abstract: Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products. Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is ti… ▽ More Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products. Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is timely for describing the current status, and current and future challenges in the form of a Roadmap article. This 2014 Magnetism Roadmap provides a view on several selected, currently very active innovative developments. It consists of 12 sections, each written by an expert in the field and addressing a specific subject, with strong emphasize on future potential. This Roadmap cannot cover the entire field. We have selected several highly relevant areas without attempting to provide a full review - a future update will have room for more topics. The scope covers mostly nano-magnetic phenomena and applications, where surfaces and interfaces provide additional functionality. New developments in fundamental topics such as interacting nano-elements, novel magnon-based spintronics concepts, spin-orbit torques and spin-caloric phenomena are addressed. New materials, such as organic magnetic materials and permanent magnets are covered. New applications are presented such as nano-magnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory, and applications in biotechnology. May the Roadmap serve as a guideline for future emerging research directions in modern magnetism. △ Less

Submitted 23 October, 2014; originally announced October 2014.

Comments: 37 pages

Journal ref: J. Phys. D: Appl. Phys. 47, 333001 (2014)

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

Authors: B. Lacoste, M. Marins de Castro, T. Devolder, R. C. Sousa, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodmacq, B. Dieny

Abstract: We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the… ▽ More We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell. △ Less

Submitted 3 December, 2014; v1 submitted 23 July, 2014; originally announced July 2014.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 90, 224404 (2014)

Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions

Authors: A. Hallal, B. Dieny, M. Chshiev

Abstract: Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its posi… ▽ More Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V concentration favoring out-of-plane magnetization direction for ~1.5 nm thick Fe layers at impurity concentrations above 20 %. At the same time, spin polarization is not affected and even enhanced in most situations favoring an increase of tunnel magnetoresistance (TMR) values. △ Less

Submitted 14 April, 2014; originally announced April 2014.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 90, 064422 (2014)

Anatomy of perpendicular magnetic anisotropy in Fe/MgO magnetic tunnel junctions: First principles insight

Authors: A. Hallal, H. X. Yang, B. Dieny, M. Chshiev

Abstract: Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d… ▽ More Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d$ and O-2p orbitals at the interface between the metal and the insulator. On-site projected analysis show that the anisotropy energy is not localized at the interface but it rather propagates into the bulk showing an attenuating oscillatory behavior which depends on orbital character of contributing states and interfacial conditions. Furthermore, it is found in most situations that states with $d_{yz(xz)}$ and $d_{z^2}$ character tend always to maintain the PMA while those with $d_{xy}$ and $d_{x^2-y^2}$ character tend to favor the in-plane anisotropy. It is also found that while MgO thickness has no influence on PMA, the calculated perpendicular magnetic anisotropy oscillates as a function of Fe thickness with a period of 2ML and reaches a maximum value of 3.6 mJ/m$^2$. △ Less

Submitted 13 August, 2013; originally announced August 2013.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 88, 184423 (2013)

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

Authors: M. Chshiev, A. Manchon, A. Kalitsov, N. Ryzhanova, A. Vedyayev, N. Strelkov, W. H. Butler, B. Dieny

Abstract: In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transf… ▽ More In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport. △ Less

Submitted 22 September, 2015; v1 submitted 12 August, 2013; originally announced August 2013.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 92, 104422 (2015)

Tunability versus deviation sensitivity in a non-linear vortex oscillator

Authors: S. Y. Martin, C. Thirion, C. Hoarau, C. Baraduc, B. Diény

Abstract: Frequency modulation experiments were performed on a spin torque vortex oscillator for a wide range of modulation frequency, up to 10 % of the oscillator frequency. A thorough analysis of the intermodulation products shows that the key parameter that describes these experiments is the deviation sensitivity, which is the dynamical frequency-current dependence. It differs significantly from the osci… ▽ More Frequency modulation experiments were performed on a spin torque vortex oscillator for a wide range of modulation frequency, up to 10 % of the oscillator frequency. A thorough analysis of the intermodulation products shows that the key parameter that describes these experiments is the deviation sensitivity, which is the dynamical frequency-current dependence. It differs significantly from the oscillator tunability discussed so far in the context of spin-transfer oscillators. The essential difference between these two concepts is related to the response time of the vortex oscillator, driven either in quasi-steady state or in a transient regime. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Comments: to be published in Physical Review B (in press)

Artificial ferroelectricity due to anomalous Hall effect in magnetic tunnel junctions

Authors: A. Vedyayev, N. Ryzhanova, N. Strelkov, B. Dieny

Abstract: We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the… ▽ More We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the tunnel barrier. AHE and SHE in the considered case have a surface nature due to proximity effect. Their amplitude is in first order of the scattering potential. This contrasts with ferromagnetic metals wherein these effect are in second (side-jump scattering) and third (skew scattering) order on these potentials. The value of AHE voltage in insulating spacer may be much larger than in metallic ferromagnetic electrodes. For the antiparallel orientation of the magnetizations in the two F-electrodes, a spontaneous Hall voltage exists even at zero applied voltage. Therefore an insulating spacer sandwiched between two ferromagnetic layers can be considered as exhibiting a spontaneous ferroelectricity. △ Less

Submitted 13 September, 2012; originally announced September 2012.

Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions

Authors: Pierre-Yves Clément, Clarisse Ducruet, Claire Baraduc, Mair Chshiev, Bernard Diény

Abstract: We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double b… ▽ More We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double barrier magnetic tunnel junctions. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: 4 pages, 3 figures

Temperature dependence of the emission linewidth in MgO-based spin torque nano-oscillators

Authors: J. F. Sierra, M. Quinsat, U. Ebels, D. Gusakova, I. Joumard, A. S. Jenkins, L. Buda-Prejbeanu, B. Dieny, M. C. Cyrille, A. Zeltser, J. A. Katine

Abstract: Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experi… ▽ More Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experiments on the linewidth broadening performed on MgO based magnetic tunnel junctions are compared to the linewidth obtained from macrospin simulations and from evaluation of the phase variance. In all cases we find that the linewidth varies linearly with temperature when the amplitude relaxation rate is of the same order as the linewidth and when the amplitude-phase coupling parameter is relatively small. The small amplitude-phase coupling parameter means that the linewidth is dominated by direct phase fluctuations and not by amplitude fluctuations, explaining thus its linear dependence as a function of temperature. △ Less

Submitted 13 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters, 101 , 062407 (2012)

Spin Transfer Torques induced by Spin Hall Effect

Authors: A. Vedyayev, N. Strelkov, M. Chshiev, N. Ryzhanova, B. Dieny

Abstract: Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is… ▽ More Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is demonstrated that spin torques could be efficiently produced by means of Spin Hall effect which may be further enhanced by modifying structure geometry. △ Less

Submitted 12 August, 2011; originally announced August 2011.

Comments: 5 pages, 6 figures

Parametric oscillator based on non-linear vortex dynamics in low resistance magnetic tunnel junctions

Authors: S. Martin, N. de Mestier, C. Thirion, C. Hoarau, Y. Conraux, C. Baraduc, B. Diény

Abstract: Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and O… ▽ More Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and Oersted-Ampère field generated by the large applied dc-current. We furthermore show that the synchronization of a vortex oscillation by applying a ac bias current is mostly efficient when the external frequency is twice the oscillator fundamental frequency. This result is interpreted in terms of a parametric oscillator. △ Less

Submitted 21 October, 2011; v1 submitted 5 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figures

First-principles investigation of the very large Perpendicular Magnetic Anisotropy at Fe|MgO Interfaces

Authors: H. X. Yang, J. H. Lee, M. Chshiev, A. Manchon, K. H. Shin, B. Dieny

Abstract: The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at Fe$|$MgO interfaces are reported in agreement with recent experiments. The origin of PMA is attributed to overlap between O-$p_z$ and transition metal… ▽ More The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at Fe$|$MgO interfaces are reported in agreement with recent experiments. The origin of PMA is attributed to overlap between O-$p_z$ and transition metal $d_{z^2}$ orbitals hybridized with $d_{xz(yz)}$ orbitals with stronger spin-orbit coupling induced splitting around the Fermi level for perpendicular magnetization orientation. Furthemore, it is shown that the PMA value weakens in case of over- or underoxidation when oxygen $p_z$ and transition metal $d_{z^2}$ orbitals overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions. △ Less

Submitted 25 November, 2010; originally announced November 2010.

Comments: 4 pages, 6 figures

Journal ref: Phys. Rev. B 84, 054401 (2011)

Magnetostatics of synthetic ferrimagnet elements

Authors: Olivier Fruchart, Bernard Dieny

Abstract: We calculate the magnetostatic energy of synthetic ferrimagnet (SyF) elements, consisting of two thin ferromagnetic layers coupled antiferromagnetically through RKKY coupling. We calculate exact formulas as well as approximate yet accurate ones, which can be used to easily derive energy barriers and anisotropy fields of SyF. These can be used to evaluate coercivity, thermal stability and other use… ▽ More We calculate the magnetostatic energy of synthetic ferrimagnet (SyF) elements, consisting of two thin ferromagnetic layers coupled antiferromagnetically through RKKY coupling. We calculate exact formulas as well as approximate yet accurate ones, which can be used to easily derive energy barriers and anisotropy fields of SyF. These can be used to evaluate coercivity, thermal stability and other useful quantities. △ Less

Submitted 11 June, 2011; v1 submitted 29 June, 2010; originally announced June 2010.

Journal ref: Journal of Magnetism and Magnetic Materials 324 (2012) 365

Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects

Authors: N. Strelkov, A. Vedyayev, D. Gusakova, L. D. Buda-Prejbeanu, M. Chshiev, S. Amara, A. Vaysset, B. Dieny

Abstract: The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current… ▽ More The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current crowding around the boundaries between the electrodes and the pillar has a quite significant influence on the spin current. △ Less

Submitted 2 February, 2010; originally announced February 2010.

Comments: 11 pages, 4 figures

Journal ref: IEEE Magnetics Letters 1, 3000304 (2010)

Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves

Authors: N. Strelkov, A. Vedyayev, N. Ryzhanova, D. Gusakova, L. D. Buda-Prejbeanu, M. Chshiev, S. Amara, N. de Mestier, C. Baraduc, B. Dieny

Abstract: The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of sp… ▽ More The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of spin-currents in the vicinity of the nanoconstriction were obtained. The angular variations of magnetoresistance and spin-transfer torque are strongly influenced by the structure geometry. △ Less

Submitted 13 July, 2011; v1 submitted 29 January, 2010; originally announced January 2010.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 84, 024416 (2011)

The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure

Authors: A. Vedyaev, N. Ryzhanova, N. Strelkov, M. Chshiev, L. Lystseva, B. Dieny

Abstract: In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier re… ▽ More In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier region under applied voltage. Electronic structure of ferromagnetic electrodes is modeled with two bands model, i.e. with majority s-electrons and minority d-holes. Furthermore, we introduce s-d hybridization by calculating the corresponding perturbation corrections for the wave and Green functions. △ Less

Submitted 3 December, 2009; v1 submitted 16 October, 2009; originally announced October 2009.

Comments: MS Word 2007, 10 pages, 3 figures

Quasi-Two-Dimensional Extraordinary Hall Effect

Authors: N. Ryzhanova, A. Vedyayev, A. Pertsova, B. Dieny

Abstract: Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating the conductivity tensor, we compare the quasi- two-dimensional Hall resistance with the resistance of a massive sample. In this study a new mechanism of EHE (g… ▽ More Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating the conductivity tensor, we compare the quasi- two-dimensional Hall resistance with the resistance of a massive sample. In this study a new mechanism of EHE (geometric mechanism of EHE) due to non-ideal interfaces and volume defects is also proposed. △ Less

Submitted 9 April, 2008; v1 submitted 26 March, 2008; originally announced March 2008.

Comments: 14 pages, 5 figures; typos corrected in thickness units (figures 1-5)

Spin transfer torques in magnetic tunnel junctions

Authors: Aurélien Manchon, Natalya Ryzhanova, Mairbek Chschiev, A. Vedyayev, K. -J. Lee, Bernard Dieny

Abstract: This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel junctions. The most significant results are presented and the main observable characteristics are discussed. A description of the mechanism of spin transfer in… ▽ More This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel junctions. The most significant results are presented and the main observable characteristics are discussed. A description of the mechanism of spin transfer in ferromagnets is finally proposed. In the second part, a quantum description of spin transport in magnetic tunnel junctions with amorphous barrier is developed. The role of spin-dependent reflections as well as electron incidence and spin-filtering by the barrier are described. We show that these mechanisms give rise to specific properties of spin transfer in tunnel junctions, very different from the case of metallic spin-valves. In the third part, the theoretical observable features of spin transfer in magnetic tunnel junctions are derived and the validity of these results is discussed and compared to recent experiments. To conclude this chapter, we study the mechanism of spin transfer in half-metallic tunnel junctions, expected to mimic MgO-based magnetic tunnel junctions. △ Less

Submitted 26 February, 2008; originally announced February 2008.

Spin-dependent diffraction at ferromagnetic/spin spiral interface

Authors: Aurélien Manchon, Natalya Ryzhanova, A. Vedyayev, Bernard Dieny

Abstract: Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown that this spin-diffraction leads to local spin and electrical currents along the interface. This study also shows that in highly non homogeneous magnetic confi… ▽ More Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown that this spin-diffraction leads to local spin and electrical currents along the interface. This study also shows that in highly non homogeneous magnetic configuration (non adiabatic limit), the contribution of the diffracted electrons is crucial to describe spin transport in such structures. △ Less

Submitted 20 December, 2007; originally announced December 2007.

Analysis of anisotropy crossover due to oxygen in Pt/Co/MOx trilayer

Authors: Aurélien Manchon, Clarisse Ducruet, Lucien Lombard, Stéphane Auffret, Bernard Rodmacq, Bernard Dieny, Stefania Pizzini, Jan Vogel, Vojtech Uhlir, Michael Hochstrasser, Giancarlo Panaccione

Abstract: Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from… ▽ More Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface. △ Less

Submitted 12 December, 2007; originally announced December 2007.

Journal ref: Journal of Applied Physics 104 (2008) 043914

Description of current-driven torques in magnetic tunnel junctions

Authors: Aurélien Manchon, Natalya Ryzhanova, A. Vedyayev, Mairbek Chschiev, Bernard Dieny

Abstract: A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences which give rise to oscillatory torques on the local magnetization. Spin transfer torque is also analyzed and an important bias asymmetry is found as well as a… ▽ More A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences which give rise to oscillatory torques on the local magnetization. Spin transfer torque is also analyzed and an important bias asymmetry is found as well as a damped oscillatory behaviour. Furthermore, we investigate the influence of the s-d exchange coupling on torque in particular in the case of half-metallic MTJ in which the spin transfer torque is due to interfacial spin-dependent reflections. △ Less

Submitted 1 December, 2007; originally announced December 2007.

X-Ray Analysis of Oxygen-induced Perpendicular Magnetic Anisotropy in Pt/Co/AlOx trilayer

Authors: Aurélien Manchon, Stefania Pizzini, Jan Vogel, Vojteh Uhlir, Lucien Lombard, Clarisse Ducruet, Stéphane Auffret, Bernard Rodmacq, Bernard Dieny, Michael Hochstrasser, Giancarlo Panaccione

Abstract: X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature annealing modifies the magnetic properties of the Co layer, inducing an enhancement of the perpendicular magnetic anisotropy. The microscopic structural properties ar… ▽ More X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature annealing modifies the magnetic properties of the Co layer, inducing an enhancement of the perpendicular magnetic anisotropy. The microscopic structural properties are analyzed via X-ray Absorption Spectroscopy, X-ray Magnetic Circular Dichroism and X-ray Photoelectron Spectroscopy measurements. It is shown that annealing enhances the amount of interfacial oxide, which may be at the origin of a strong perpendicular magnetic anisotropy. △ Less

Submitted 12 December, 2007; v1 submitted 17 September, 2007; originally announced September 2007.

Spin Diode Based on Fe/MgO Double Tunnel Junction

Authors: A. Iovan, S. Andersson, Yu. G. Naidyuk, A. Vedyaev, B. Dieny, V. Korenivski

Abstract: We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob… ▽ More We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic. △ Less

Submitted 18 October, 2007; v1 submitted 16 May, 2007; originally announced May 2007.

Comments: 14 pages

Creep and flow regimes of magnetic domain wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy

Authors: P. J. Metaxas, J. P. Jamet, A. Mougin, M. Cormier, J. Ferre, V. Baltz, B. Rodmacq, B. Dieny, R. L. Stamps

Abstract: We report on magnetic domain wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfa… ▽ More We report on magnetic domain wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain wall motion, analysis of which yields values for the damping parameter, $α$. △ Less

Submitted 13 December, 2007; v1 submitted 27 February, 2007; originally announced February 2007.

Comments: 4 pages, 2 figures, published in Phys. Rev. Lett., changes to manuscript following referees' reports (mostly experimental details or regarding clarity), current version consistent with version in PRL

Journal ref: Phys. Rev. Lett. 99, 217208 (2007)

Magnetic domain structure and dynamics in interacting ferromagnetic stacks with perpendicular anisotropy

Authors: S. Wiebel, J. P. Jamet, N. Vernier, A. Mougin, J. Ferre, V. Baltz, B. Rodmacq, B. Dieny

Abstract: The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactio… ▽ More The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactions gives rise to ultra-slow dynamics even in zero applied field, i.e. it affects the long time domain stability. Due to this additionnal interaction field, the magnetization reversal under short magnetic field pulses differs markedly from the well-known slow dynamic behavior. Namely, in high field, the magnetization of the coupled harder layer has been observed to reverse more rapidly by domain wall motion than the softer layer alone. △ Less

Submitted 18 January, 2006; originally announced January 2006.

Comments: 42 pages including 17 figures. submitted to JAP

Journal ref: Journal of Applied Physics 100, 043912 (2006)

Magnetic relaxation of exchange biased (Pt/Co) multilayers studied by time-resolved Kerr microscopy

Authors: Fabien Romanens, Stefania Pizzini, Fabiano Yokaichiya, Marlio Bonfim, Yan Pennec, Julio Camarero, Jan Vogel, Jordi Sort, Flavio Garcia, Bernard Rodmacq, Bernard Dieny

Abstract: Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both descending and ascending applied fields, but a much larger nucleation density is observed for the descending branch, where the field is applied antiparallel to the… ▽ More Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both descending and ascending applied fields, but a much larger nucleation density is observed for the descending branch, where the field is applied antiparallel to the exchange bias field direction. These results can be explained by taking into account the presence of local inhomogeneities of the exchange bias field. △ Less

Submitted 29 September, 2005; originally announced September 2005.

Comments: To appear in Physical Review B (October 2005)

Journal ref: Physical Review B 72 (2005) 134410

Magnetic relaxation measurements of exchange biased (Pt/Co) multilayers with perpendicular anisotropy

Authors: Fabien Romanens, Stefania Pizzini, Jordi Sort, Flavio Garcia, Julio Camarero, Fabiano Yokaichiya, Yan Pennec, Jan Vogel, Bernard Dieny

Abstract: Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxat… ▽ More Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxation measurements were fitted using Fatuzzo's model, which assumes that reversal occurs by domain nucleation and domain wall propagation. For 2 nm thick Pt spacer (no exchange bias) the reversal is dominated by domain wall propagation starting from a few nucleation centers. For 0.2 nm Pt spacer (maximum exchange bias) the reversal is strongly dominated by nucleation, and no differences between the behaviour of the ascending and descending branches can be observed. For 0.4 nm Pt spacer (weaker exchange bias) the nucleation density becomes less important, and the measurements reveal a much stronger density of nucleation centers in the descending branch. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Comments: Europhysical Journal B, in print DOI: 10.1140/epjb/e2005-00053-3

Journal ref: European Physical Journal B 45 (2005) 185

Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads

Authors: A. Deac, K. J. Lee, Y. Liu, O. Redon, M. Li, P. Wang, J. P. Nozieres, B. Dieny

Abstract: In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP) magneto-resistive heads. The structure of the samples included an exchange biased synthetic pinned layer and a free layer both laminated by insertion of several ultrathin Cu… ▽ More In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP) magneto-resistive heads. The structure of the samples included an exchange biased synthetic pinned layer and a free layer both laminated by insertion of several ultrathin Cu layers. Despite the small thickness of the polarizing layer, our results show that the free layer can be switched between the parallel (P) and the antiparallel (AP) states by applying current densities of the order of 10^7 A/cm^2. A strong asymmetry is observed between the two critical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewski model. Thanks to the use of exchange biased structures, the stability phase diagrams could be obtained in the four quadrants of the (H, I) plan. The critical lines derived from the magnetoresistance curves measured with different sense currents, and from the resistance versus current curves measured for different applied fields, match each other very well. The main features of the phase diagrams can be reproduced by investigating the stability of the solutions of the Landau Lifshitz Gilbert equation including spin torque term within a macrospin model. A spin-transfer saturation effect was observed in the positive currents range. We attribute it to a de-depolarization effect which appears as a consequence of the asymmetric heating of the pillars, whose top and the bottom leads are made of different materials. △ Less

Submitted 12 January, 2005; originally announced January 2005.

Comments: 8 figures

Diode effect in magnetic tunnel junctions

Authors: F. Kanjouri, N. Ryzhanova, B. Dieny, N. Strelkov, A. Vedyaev

Abstract: The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in… ▽ More The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in the vicinity of the impurity. If the position of the impurity inside the barrier is asymmetric, e.g. closer to one of the interfaces F/I, the I-V characteristic exhibits a quasidiode behavior. The case of a single impurity and of a random distribution of impurities within a plane were both studied. △ Less

Submitted 14 December, 2004; originally announced December 2004.

Comments: 8 pages, 5 figures

Current perpendicular to plane Giant Magnetoresistance (GMR) in laminated nanostructures

Authors: A. Vedyayev, I. Zhukov, B. Dieny

Abstract: We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially re… ▽ More We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induces a significant increase in CPP resistance. △ Less

Submitted 23 November, 2004; originally announced November 2004.

Comments: 4 pages, 2 figures