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Low charge noise quantum dots with industrial CMOS manufacturing
Authors:
Asser Elsayed,
Mohamed Shehata,
Clement Godfrin,
Stefan Kubicek,
Shana Massar,
Yann Canvel,
Julien Jussot,
George Simion,
Massimo Mongillo,
Danny Wan,
Bogdan Govoreanu,
Iuliana P. Radu,
Ruoyu Li,
Pol Van Dorpe,
Kristiaan De Greve
Abstract:
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and oper…
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Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.
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Submitted 13 December, 2022;
originally announced December 2022.
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Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
Authors:
N. I. Dumoulin Stuyck,
R. Li,
C. Godfrin,
A. Elsayed,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
M. Shehata,
G. Simion,
Y. Canvel,
L. Goux,
M. Heyns,
B. Govoreanu,
I. P. Radu
Abstract:
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO…
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Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO$_2$ is proved by a 10K Hall mobility of $1.5 \cdot 10^4$ $cm^2$/Vs. Well-controlled sensors with low charge noise (3.6 $μ$eV/$\sqrt{\mathrm{Hz}}$ at 1 Hz) are used for charge sensing down to the last electron. We demonstrate excellent and reproducible interdot coupling control over nearly 2 decades (2-100 GHz). We show spin manipulation and single-shot spin readout, extracting a valley splitting energy of around 150 $μ$eV. These low-disorder, uniform qubit devices and 300mm fab integration pave the way for fast scale-up to large quantum processors.
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Submitted 24 August, 2021;
originally announced August 2021.
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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Authors:
R. Li,
N. I. Dumoulin Stuyck,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
A. Elsayed,
M. Shehata,
G. Simion,
C. Godfrin,
Y. Canvel,
Ts. Ivanov,
L. Goux,
B. Govoreanu,
I. P. Radu
Abstract:
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are charact…
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We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
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Submitted 7 February, 2021;
originally announced February 2021.
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Generalized Ramsey Interferometry Explored with a Single Nuclear Spin Qudit
Authors:
Clément Godfrin,
Rafik Ballou,
Edgar Bonet,
Mario Ruben,
Svetlana Klyatskaya,
Wolfgang Wernsdorfer,
Franck Balestro
Abstract:
Qudits, with their state space of dimension d > 2, open fascinating experimental prospects. The quantum properties of their states provide new potentialities for quantum information, quantum contextuality, expressions of geometric phases, facets of quantum entanglement and many other foundational aspects of the quantum world, which are unapproachable with qubits. We here experimentally investigate…
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Qudits, with their state space of dimension d > 2, open fascinating experimental prospects. The quantum properties of their states provide new potentialities for quantum information, quantum contextuality, expressions of geometric phases, facets of quantum entanglement and many other foundational aspects of the quantum world, which are unapproachable with qubits. We here experimentally investigate the quantum dynamics of a qudit (d = 4) that consists of a single 3/2 nuclear spin embedded in a molecular magnet transistor geometry, coherently driven by a microwave electric field. We propose and implement three protocols based on a generalization of the Ramsey interferometry to a multilevel system. First, the standard Ramsey interference is used to measure the accumulation of geometric phases. Then, two distinct transitions of the nuclear spin are addressed to measure the phase of an iSWAP quantum gate. Finally, through a succession of two Hadamard gates, the coherence time of a 3-state superposition is measured.
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Submitted 24 October, 2018;
originally announced October 2018.
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Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm
Authors:
Clément Godfrin,
Abdelkarim Ferhat,
Rafik Ballou,
Svetlana Klyatskaya,
Mario Ruben,
Wolfgang Wernsdorfer,
Franck Balestro
Abstract:
Quantum algorithms use the principles of quantum mechanics, as for example quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimisation, simulation and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a sing…
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Quantum algorithms use the principles of quantum mechanics, as for example quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimisation, simulation and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3/2-spin carried by a Single Molecular Magnet (SMM) transistor. The coherent manipulation of this multi-level qudit is achieved by means of electric fields only. Grover's search algorithm was implemented by constructing a quantum database via a multi-level Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multi-level quantum system with non-equal spaced energy levels, opening the way to novel quantum search algorithms.
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Submitted 28 November, 2017; v1 submitted 27 October, 2017;
originally announced October 2017.
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Landau-Zener transition in a continuously measured single-molecule spin transistor
Authors:
F. Troiani,
C. Godfrin,
S. Thiele,
F. Balestro,
W. Wernsdorfer,
S. Klyatskaya,
M. Ruben,
M. Affronte
Abstract:
We monitor the Landau-Zener dynamics of a single-ion magnet in a spin-transistor geometry. For increasing field-sweep rates, the spin reversal probability shows increasing deviations from that of a closed system. In the low-conductance limit, such deviations are shown to result from a dephasing process. In particular, the observed behaviors are succesfully simulated by means of an adiabatic master…
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We monitor the Landau-Zener dynamics of a single-ion magnet in a spin-transistor geometry. For increasing field-sweep rates, the spin reversal probability shows increasing deviations from that of a closed system. In the low-conductance limit, such deviations are shown to result from a dephasing process. In particular, the observed behaviors are succesfully simulated by means of an adiabatic master equation, with time averaged dephasing (Lindblad) operators. The time average is tentatively interpeted in terms of the finite time resolution of the continuous measurement.
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Submitted 12 May, 2017;
originally announced May 2017.
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Electrical single spin read-out using an exchange-coupled quantum dot
Authors:
Clément Godfrin,
Stefan Thiele,
Karim Ferhat,
Svetlana Klyatskaya,
Mario Ruben,
Wolfgang Wernsdorfer,
Franck Balestro
Abstract:
We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two systems results in a spin-dependent conductance through the read-out dot and establishes an all electrical and non-destructive single spin detection. With conducta…
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We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two systems results in a spin-dependent conductance through the read-out dot and establishes an all electrical and non-destructive single spin detection. With conductance variations up to 4% and read-out fidelities greater than 99.5%, this method represents an alternative to systems where spin to charge conversion cannot be implemented. Using a semi-classical approach, we present an asymetric exchange coupling model in good agreement with our experimental results.
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Submitted 5 May, 2017;
originally announced May 2017.
