Showing 1–9 of 9 results for author: Van Dorpe, P

Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing

Authors: Federica Luciano, Lieve Teugels, Sean McMitchell, Giacomo Talmelli, Anaïs Guerenneur, Renzo Stheins, Rudy Caluwaerts, Thierry Conard, Inge Vaesen, Stefanie Sergeant, Pol Van Dorpe, Stefan De Gendt, Matthijn Dekkers, Johan Swerts, Florin Ciubotaru, Christoph Adelmann

Abstract: We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP resid… ▽ More We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Comments: 13 pages of text, 4 tables and 7 figures. This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

Low charge noise quantum dots with industrial CMOS manufacturing

Authors: Asser Elsayed, Mohamed Shehata, Clement Godfrin, Stefan Kubicek, Shana Massar, Yann Canvel, Julien Jussot, George Simion, Massimo Mongillo, Danny Wan, Bogdan Govoreanu, Iuliana P. Radu, Ruoyu Li, Pol Van Dorpe, Kristiaan De Greve

Abstract: Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and oper… ▽ More Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits. △ Less

Submitted 13 December, 2022; originally announced December 2022.

Comments: 22 pages, 13 figures

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Authors: M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li, Fahd A. Mohiyaddin, Danny Wan, Massimo Mongillo, Bogdan Govoreanu, Iuliana Radu, Kristiaan De Greve, Pol Van Dorpe

Abstract: The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space i… ▽ More The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies. △ Less

Submitted 22 August, 2023; v1 submitted 10 October, 2022; originally announced October 2022.

Comments: 37 pages , 24 figures

Journal ref: PhysRevB. 108, 045305, 2023

Sieve of Eratosthenes for Bose-Einstein Condensates in Optical Moiré Lattices

Authors: Dmitry Kouznetsov, Pol Van Dorpe, Niels Verellen

Abstract: We catalog known optical moiré lattices and uncover exotic lattice configurations following a geometric analog of the ancient sieve of Eratosthenes algorithm for finding prime numbers. Rich dynamics of Bose-Einstein condensates loaded into these optical lattices is revealed from numerical simulations of time-of-flight interference patterns. What sets this method apart is the ability to tune the pe… ▽ More We catalog known optical moiré lattices and uncover exotic lattice configurations following a geometric analog of the ancient sieve of Eratosthenes algorithm for finding prime numbers. Rich dynamics of Bose-Einstein condensates loaded into these optical lattices is revealed from numerical simulations of time-of-flight interference patterns. What sets this method apart is the ability to tune the periodicity of the optical lattices without changing the wavelength of the laser, yet maintaining the local potential at the individual lattices sites. In addition, we discuss the ability to spatially translate the optical lattice through applying a structured phase only. △ Less

Submitted 3 March, 2022; originally announced March 2022.

Journal ref: Phys. Rev. A 105, L021304 (2022)

High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Authors: Timothy N. Camenzind, Asser Elsayed, Fahd A. Mohiyaddin, Ruoyu Li, Stefan Kubicek, Julien Jussot, Pol Van Dorpe, Bogdan Govoreanu, Iuliana Radu, Dominik M. Zumbühl

Abstract: The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide… ▽ More The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors. △ Less

Submitted 9 June, 2021; originally announced June 2021.

Comments: 3 pages plus appendix 1 page with 7 figures

Surface enhanced Raman spectroscopy using a single mode nanophotonic-plasmonic platform

Authors: Frédéric Peyskens, Ashim Dhakal, Pol Van Dorpe, Nicolas Le Thomas, Roel Baets

Abstract: Surface Enhanced Raman Spectroscopy (SERS) is a well-established technique for enhancing Raman signals. Recently photonic integrated circuits have been used, as an alternative to microscopy based excitation and collection, to probe SERS signals from external metallic nanoparticles. However, in order to develop quantitative on-chip SERS sensors, integration of dedicated nanoplasmonic antennas and w… ▽ More Surface Enhanced Raman Spectroscopy (SERS) is a well-established technique for enhancing Raman signals. Recently photonic integrated circuits have been used, as an alternative to microscopy based excitation and collection, to probe SERS signals from external metallic nanoparticles. However, in order to develop quantitative on-chip SERS sensors, integration of dedicated nanoplasmonic antennas and waveguides is desirable. Here we bridge this gap by demonstrating for the first time the generation of SERS signals from integrated bowtie nanoantennas, excited and collected by a single mode waveguide, and rigorously quantify the enhancement process. The guided Raman power generated by a 4-Nitrothiophenol coated bowtie antenna shows an 8 x 10^6 enhancement compared to the free-space Raman scattering. An excellent correspondence is obtained between the theoretically predicted and observed absolute Raman power. This work paves the way towards fully integrated lab-on-a-chip systems where the single mode SERS-probe can be combined with other photonic, fluidic or biological functionalities. △ Less

Submitted 10 August, 2015; originally announced August 2015.

Comments: Submitted to Nature Photonics

Broadband absorption enhancement in ultra-thin crystalline Si solar cells by incorporating metallic and dielectric nanostructures in the back reflector

Authors: Samart Jain, Valerie Depauw, Vladimir D. Miljkovic, Alexamder Dmitriev, Christos Trompoukis, Ivan Gordon, Pol van Dorpe, Ounsi El Daif

Abstract: We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic nanostructures located at the back side, and optimize them for enhancing absorption in the silicon layer. We validate our numerical results experimentally and also compa… ▽ More We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic nanostructures located at the back side, and optimize them for enhancing absorption in the silicon layer. We validate our numerical results experimentally and also compare the absorption enhancement in the solar cell structure, both with quasi-periodic and random metallic nanostructures. We have looked at the interplay between the metallic nanostructures and an integrated back-reflector. We show that the combination of metallic nanoparticles and a metallic reflector results in significant parasitic absorption. We compared this to another implementation based on titanium dioxide nanoparticles which act as a lambertian reflector of light. Our simulation and experimental results show that this proposed configuration results in reduced absorption losses and in broadband enhancement of absorption for ultra-thin solar cells, paving the way to an optimal back reflector for thin film photovoltaics. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Comments: 18 pages double space. 14 figures. Submitted

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

Authors: P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl

Abstract: The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Butt… ▽ More The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization. △ Less

Submitted 25 February, 2005; originally announced February 2005.

Comments: Submitted to Phys. Rev. B Rapid Communications

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Authors: P. Van Dorpe, V. F. Motsnyi, M. Nijboer, E. Goovaerts, V. I. Safarov, J. Das, W. Van Roy, G. Borghs, J. De Boeck

Abstract: We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polariza… ▽ More We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature. △ Less

Submitted 25 June, 2003; v1 submitted 16 August, 2002; originally announced August 2002.

Journal ref: Jpn. J. Appl. Phys. Vol.42 No.5B pp.L502 - L504 (2003)