Showing 1–19 of 19 results for author: Swerts, J

Selecting Alternative Metals for Advanced Interconnects

Authors: Jean-Philippe Soulié, Kiroubanand Sankaran, Benoit Van Troeye, Alicja Leśniewska, Olalla Varela Pedreira, Herman Oprins, Gilles Delie, Claudia Fleischmann, Lizzie Boakes, Cédric Rolin, Lars-Åke Ragnarsson, Kristof Croes, Seongho Park, Johan Swerts, Geoffrey Pourtois, Zsolt Tőkei, Christoph Adelmann

Abstract: Today, interconnect resistance and reliability are key limiters for the performance of advanced CMOS circuits. As transistor scaling is slowing, interconnect scaling has become the main driver for circuit miniaturization, and interconnect limitations are expected to become even more stringent in future CMOS technology nodes. Current Cu dual-damascene metallization is also becoming increasingly cha… ▽ More Today, interconnect resistance and reliability are key limiters for the performance of advanced CMOS circuits. As transistor scaling is slowing, interconnect scaling has become the main driver for circuit miniaturization, and interconnect limitations are expected to become even more stringent in future CMOS technology nodes. Current Cu dual-damascene metallization is also becoming increasingly challenging as critical interconnect dimensions approach 10 nm, alternative metallization schemes are researched with increasing intensity for about a decade. The selection of alternative metals is a highly multifaceted task and includes many criteria, covering the resistivity at reduced dimension, reliability and thermal aspects, as well as a sustainability perspective. In this tutorial, we introduce the basic criteria for alternative metal benchmarking and selection, and discuss the current state of the art of the field. The tutorial covers materials close to manufacturing introduction, materials under actual research, as well as future directions for fundamental research. While first alternatives to Cu metallization in commercial CMOS devices have become a reality recently, research for the ultimate interconnect metal is ongoing. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 72 pages, 27 figures

Cu$_x$Al$_{1-x}$ films as Alternatives to Copper for Advanced Interconnect Metallization

Authors: Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois, Johan Swerts, Zsolt Tőkei, Christoph Adelmann

Abstract: Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by P… ▽ More Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by PVD with thicknesses in the range between 3 and 28 nm. The lowest resistivities of 9.5 $μΩ$cm were obtained for 28 nm thick stochiometric CuAl and CuAl$_2$ after 400$^\circ$C post-deposition annealing. Based on the experimental results, we discuss the main challenges for the studied aluminides from an interconnect point of view, namely the control of the film stoichiometry, the phase separation observed for off-stoichiometric CuAl and CuAl$_2$, as well as the presence of a nonstoichiometric surface oxide. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 24 pages, 7 figures

Al$_3$Sc thin films for advanced interconnect applications

Authors: Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta, Karl Opsomer, Christophe Detavernier, Joris Van de Vondel, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann

Abstract: Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain… ▽ More Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics. △ Less

Submitted 23 January, 2024; v1 submitted 31 October, 2023; originally announced October 2023.

Comments: 17 pages, 4 figures. Accepted version

Journal ref: Microelectronic Engineering 286, 112141 (2024)

Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing

Authors: Federica Luciano, Lieve Teugels, Sean McMitchell, Giacomo Talmelli, Anaïs Guerenneur, Renzo Stheins, Rudy Caluwaerts, Thierry Conard, Inge Vaesen, Stefanie Sergeant, Pol Van Dorpe, Stefan De Gendt, Matthijn Dekkers, Johan Swerts, Florin Ciubotaru, Christoph Adelmann

Abstract: We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP resid… ▽ More We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Comments: 13 pages of text, 4 tables and 7 figures. This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 801055 "Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics" - CHIRON

Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers

Authors: D. P. Lozano, M. Mongillo, X. Piao, S. Couet, D. Wan, Y. Canvel, A. M. Vadiraj, Ts. Ivanov, J. Verjauw, R. Acharya, J. Van Damme, F. A. Mohiyaddin, J. Jussot, P. P. Gowda, A. Pacco, B. Raes, J. Van de Vondel, I. P. Radu, B. Govoreanu, J. Swerts, A. Potočnik, K. De Greve

Abstract: The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised… ▽ More The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance. △ Less

Submitted 30 November, 2022; v1 submitted 29 November, 2022; originally announced November 2022.

Comments: 20 pages, 10 figures

Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

Authors: J. Verjauw, A. Potočnik, M. Mongillo, R. Acharya, F. Mohiyaddin, G. Simion, A. Pacco, Ts. Ivanov, D. Wan, A. Vanleenhove, L. Souriau, J. Jussot, A. Thiam, J. Swerts, X. Piao, S. Couet, M. Heyns, B. Govoreanu, I. Radu

Abstract: The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate… ▽ More The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors. △ Less

Submitted 22 December, 2020; v1 submitted 19 December, 2020; originally announced December 2020.

Comments: 5+11 pages, 5+7 figures, 0+7 tables

Journal ref: Phys. Rev. Applied 16, 014018 (2021)

Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers

Authors: T. Devolder, S. Couet, J. Swerts, S. Mertens, S. Rao, G. S. Kar

Abstract: To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spa… ▽ More To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spacer thickness and growth condition on the switching metrics of tunnel junctions thermally annealed at 400$^\circ$C for the case of 1-4 Å Ta spacers. Thick Ta spacer results in a large anisotropies indicative of a better defined top FeCoB/MgO interface, but this is achieved at the systematic expense of a stronger damping. For the best anisotropy-damping compromise, junctions of diameter 22 nm can still be stable and spin-torque switched. Coercivity and inhomogeneous linewidth broadening, likely arising from roughness at the FeCoB/Ta interface, can be reduced if a sacrificial Mg layer is inserted before the Ta spacer deposition. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: To appear in IEEE magnetics letters

Offset fields in perpendicularly magnetized tunnel junctions

Authors: T. Devolder, R. Carpenter, S. Rao, W. Kim, S. Couet, J. Swerts, G. S. Kar

Abstract: We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on… ▽ More We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on the mutual orientation of the two magnetizations. The offset field decreases with the resistance area product of the tunnel oxide. Patterning the tunnel junction into an STT-MRAM disk-shaped cell changes substantially the offset field, as the reduction of the lateral dimension comes with the generation of stray fields by the reference and the hard layer. The experimental offset field compares best with the spatial average of the sum of these stray fields, thereby providing guidelines for the offset field engineering. △ Less

Submitted 23 April, 2019; originally announced April 2019.

Comments: Special issue of J. Phys. D: Appl. Phys (2019) on STT-MRAM

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

Authors: K. Garello, F. Yasin, S. Couet, L. Souriau, J. Swerts, S. Rao, S. Van Beek, W. Kim, E. Liu, S. Kundu, D. Tsvetanova, N. Jossart, K. Croes, E. Grimaldi, M. Baumgartner, D. Crotti, A. Furnémont, P. Gambardella, G. S. Kar

Abstract: We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. △ Less

Submitted 22 October, 2018; originally announced October 2018.

Comments: presented at VLSI2018 session C8-2

Journal ref: 2018 IEEE Symposium on VLSI Circuits

Gilbert damping of high anisotropy Co/Pt multilayers

Authors: Thibaut Devolder, S. Couet, J. Swerts, G. S. Kar

Abstract: Using broadband ferromagnetic resonance, we measure the damping parameter of [Co(5 Å)/Pt(3 Å)]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert damping parameters as low as 0.021 can be obtained despite a magneto-cr… ▽ More Using broadband ferromagnetic resonance, we measure the damping parameter of [Co(5 Å)/Pt(3 Å)]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert damping parameters as low as 0.021 can be obtained despite a magneto-crystalline anisotropy as large as $10^6~\textrm{J/m}^3$. The inhomogeneous broadening accounts for part of the ferromagnetic resonance linewidth, indicating some structural disorder leading to a equivalent 20 mT of inhomogenity of the effective field. The unexpectedly relatively low damping factor indicates that the presence of the Pt heavy metal within the multilayer may not be detrimental to the damping provided that intermixing is avoided at the Co/Pt interfaces. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Journal ref: J. Phys. D:Appl. Phys. 51 135002 (2018)

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Authors: Danny Wan, Mauricio Manfrini, Adrien Vaysset, Laurent Souriau, Lennaert Wouters, Arame Thiam, Eline Raymenants, Safak Sayan, Julien Jussot, Johan Swerts, Sebastien Couet, Nouredine Rassoul, Khashayar Babaei Gavan, Kristof Paredis, Cedric Huyghebaert, Monique Ercken, Christopher J. Wilson, Dan Mocuta, Iuliana P. Radu

Abstract: Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant st… ▽ More Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications △ Less

Submitted 28 November, 2017; v1 submitted 9 November, 2017; originally announced November 2017.

Comments: submitted to Japanese Journal of Applied Physics

Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

Authors: T. Devolder, S. Couet, J. Swerts, E. Liu, T. Lin, S. Mertens, G. Kar, A. Furnemont

Abstract: We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub… ▽ More We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub-unit of the magnetic tunnel junction and demonstrate that this material option can ensure a satisfactory resilience to the 400$^\circ$C thermal annealing needed in solid-state magnetic memory applications. The dual MgO free layer possesses an anneal-robust 0.4 T effective anisotropy and suffers only a minor increase of its Gilbert damping from 0.007 to 0.010 for the toughest annealing conditions. Within the fixed system, the ferro-coupler and texture-breaking TaFeCoB layer keeps an interlayer exchange above 0.8 mJ/m$^2$, while the Ru antiferrocoupler layer within the synthetic antiferromagnet maintains a coupling above -0.5 mJ/m$^2$. These two strong couplings maintain the overall functionality of the tunnel junction upon the toughest annealing despite the gradual degradation of the thin Co layer anisotropy that may reduce the operation margin in spin torque memory applications. Based on these findings, we propose further optimization routes for the next generation magnetic tunnel junctions. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Journal ref: Journal of Applied Physics 121, 113904 (2017)

Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

Authors: Thibaut Devolder, Joo-Von Kim, J. Swerts, S. Couet, S. Rao, W. Kim, S. Mertens, G. Kar, V. Nikitin

Abstract: We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\% increases the crystalliza… ▽ More We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\% increases the crystallization temperature, thereby postponing the onset of elemental diffusion within the free layer. This reduction of the interdiffusion of the Ta atoms helps maintaining the Gilbert damping at a low level of 0.009 without any penalty on the anisotropy and the magneto-transport properties up to the 400$^\circ$C annealing required in CMOS back-end of line processing. In addition, we show that dual MgO free layers of composition MgO/FeCoB/Ta/FeCoB/MgO have a substantially lower damping than their MgO/FeCoB/Ta counterparts, reaching damping parameters as low as 0.0039 for a 3 Å thick Tantalum spacer. This confirms that the dominant channel of damping is the presence of Ta impurities within the FeCoB alloy. On optimized tunnel junctions, we then study the duration of the switching events induced by spin-transfer-torque. We focus on the sub-threshold thermally activated switching in optimal applied field conditions. From the electrical signatures of the switching, we infer that once the nucleation has occurred, the reversal proceeds by a domain wall sweeping though the device at a few 10 m/s. The smaller the device, the faster its switching. We present an analytical model to account for our findings. The domain wall velocity is predicted to scale linearly with the current for devices much larger than the wall width. The wall velocity depends on the Bloch domain wall width, such that the devices with the lowest exchange stiffness will be the ones that host the domain walls with the slowest mobilities. △ Less

Submitted 4 September, 2017; v1 submitted 9 March, 2017; originally announced March 2017.

Comments: Submitted to the proceedings of TMRC 2017

Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy

Authors: Enlong Liu, J. Swerts, T. Devolder, S. Couet, S. Mertens, T. Lin, V. Spampinato, A. Franquet, T. Conard, S. Van Elshocht, A. Furnemont, J. De Boeck, G. Kar

Abstract: [Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this pape… ▽ More [Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited \textit{in-situ} on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required \textit{fcc}(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy (IMA) is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400$^{\circ}$C. The largest effective perpendicular anisotropy energy ($K_U^{\mathrm{eff}}\approx 2\times10^5$J/m$^3$) after annealing is achieved on NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased damping after annealing. Here we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and damping. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 9 pages, 11 figures

Journal ref: Journal of Applied Physics 121, 043905 (2017)

Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy

Authors: T. Devolder, E. Liu, J. Swerts, S. Couet, T. Lin, S. Mertens, A. Furnemont, G. Kar, J. De Boeck

Abstract: We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the aco… ▽ More We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields. The modeling provides the interlayer exchange coupling, the anisotropies and the damping factors. The popular Ta spacer are outperformed by W and even more by Mo, which combines the strongest interlayer exchange coupling without sacrificing anisotropies, damping factors and transport properties. △ Less

Submitted 26 September, 2016; originally announced September 2016.

Comments: To appear the Applied Physics Letters, 2016

Evolution of perpendicular magnetized tunnel junctions upon annealing

Authors: Thibaut Devolder, S. Couet, J. Swerts, A. Furnemont

Abstract: We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 $^{\circ}$C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange coup… ▽ More We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 $^{\circ}$C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange couplings and the layers' anisotropies within the stack which can serve as a diagnosis of the tunnel junction state after each annealing step. The anisotropies of the two CoFeB-based parts and the two Co/Pt-based parts of the tunnel junction decay at different rates during annealing. The ferromagnet exchange coupling through the texture-breaking Ta layer fails above 375$^{\circ}$C. The Ru spacer meant to promote a synthetic antiferromagnet behavior is also insufficiently robust to annealing. Based on these evolutions we propose optimization routes for the next generation tunnel junctions. △ Less

Submitted 9 March, 2016; originally announced March 2016.

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

Authors: T. Devolder, Joo-Von Kim, F. Garcia-Sanchez, J. Swerts, W. Kim, S. Couet, G. Kar, A. Furnemont

Abstract: We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow… ▽ More We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the spin-torque reproduces the essential dynamical signatures of the reversal. The P to AP transition has a complex dynamics with dynamical back-hopping whose probability increases with voltage. We attribute this back-hopping to the instability of the nominally fixed layers. △ Less

Submitted 2 February, 2016; originally announced February 2016.

Journal ref: Physical Review B 93, 024420 (2016)

Tailoring Fe/Ag Superparamagnetic Composites by Multilayer Deposition

Authors: J. Balogh, D. Kaptás, L. F. Kiss, T. Pusztai, E. Szilágyi, Á. Tunyogi, J. Swerts, S. Vandezande, K. Temst, C. Van Haesendonck

Abstract: The magnetic properties of Fe/Ag granular multilayers were examined by SQUID magnetization and Mossbauer spectroscopy measurements. Very thin (0.2 nm) discontinuous Fe layers show superparamagnetic properties that can be tailored by the thickness of both the magnetic and the spacer layers. The role of magnetic interactions was studied in novel heterostructures of superparamagnetic and ferromagne… ▽ More The magnetic properties of Fe/Ag granular multilayers were examined by SQUID magnetization and Mossbauer spectroscopy measurements. Very thin (0.2 nm) discontinuous Fe layers show superparamagnetic properties that can be tailored by the thickness of both the magnetic and the spacer layers. The role of magnetic interactions was studied in novel heterostructures of superparamagnetic and ferromagnetic layers and the specific contribution of the ferromagnetic layers to the low field magnetic susceptibility was identified. △ Less

Submitted 24 February, 2005; originally announced February 2005.

Comments: 5 pages and 3 figures

Asymmetric flux pinning in laterally nanostructured ferromagnetic / superconducting bilayers

Authors: M. Lange, M. J. Van Bael, L. Van Look, K. Temst, J. Swerts, G. Guentherodt, V. V. Moshchalkov, Y. Bruynseraede

Abstract: We investigated the pinning of flux lines in a superconducting film by a regular array of magnetic antidots. The sample consists of a Co/Pt multilayer with perpendicular magnetic anisotropy in which a regular pattern of submicron holes is introduced and which is covered by a type-II superconducting Pb film. The resulting ferromagnetic/superconducting heterostructure shows a pronounced asymmetric… ▽ More We investigated the pinning of flux lines in a superconducting film by a regular array of magnetic antidots. The sample consists of a Co/Pt multilayer with perpendicular magnetic anisotropy in which a regular pattern of submicron holes is introduced and which is covered by a type-II superconducting Pb film. The resulting ferromagnetic/superconducting heterostructure shows a pronounced asymmetric magnetization curve with respect to the field polarity. This asymmetry clearly demonstrates that the magnetic contribution dominates the pinning potential imposed by the magnetic antidots on the superconducting film. △ Less

Submitted 9 January, 2002; v1 submitted 22 December, 2000; originally announced December 2000.

Comments: 7 pages, 6 figures, including erratum with 1 page, 1 figure

Journal ref: Europhysics Letters 53, 646 (2001) [57, 149 (2002)]