Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing
Authors:
Federica Luciano,
Lieve Teugels,
Sean McMitchell,
Giacomo Talmelli,
Anaïs Guerenneur,
Renzo Stheins,
Rudy Caluwaerts,
Thierry Conard,
Inge Vaesen,
Stefanie Sergeant,
Pol Van Dorpe,
Stefan De Gendt,
Matthijn Dekkers,
Johan Swerts,
Florin Ciubotaru,
Christoph Adelmann
Abstract:
We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP resid…
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We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly.
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Submitted 21 April, 2023;
originally announced April 2023.
Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling
Authors:
H. J. H. Smilde,
A. A. Golubov,
Ariando,
G. Rijnders,
J. M. Dekkers,
S. Harkema,
D. H. A. Blank,
H. Rogalla,
H. Hilgenkamp
Abstract:
We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}% \cong 1.8$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $θ$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($θ$)-dependence presents 2-fold…
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We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}% \cong 1.8$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $θ$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($θ$)-dependence presents 2-fold symmetry. The minima in $I_{c}R_{n}$ at $θ\cong 50^{\circ}$ suggest a real s-wave subdominant component and negligible $d_{xy}$-wave or imaginary s-wave admixtures. The $I_{c}R_{n}$($θ$)-dependence is well-fitted by 83% $d_{x^{2}-y^{2}}$-, 15% isotropic $s$- and 2% anisotropic s-wave order parameter symmetry, consistent with $Δ_{b}/Δ_{a} \cong 1.5$.
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Submitted 26 October, 2005;
originally announced October 2005.
