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Photoemission Spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials
Authors:
Faegheh S. Sajjadian,
Laura Galleni,
Kevin M. Dorney,
Dhirendra P. Singh,
Fabian Holzmeier,
Michiel J. van Setten,
Stefan De Gendt,
Thierry Conard
Abstract:
Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV) lithography scanners with specialized photoresists. Since the quality and precision of the transferred circuit pattern is determined by the EUV induced chemical…
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Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV) lithography scanners with specialized photoresists. Since the quality and precision of the transferred circuit pattern is determined by the EUV induced chemical changes in the photoresist, having a deep understanding of these chemical changes is of pivotal importance. For this purpose, several spectroscopic and material characterization techniques have already been employed so far. Among them, photoemission can be essential as it not only allows direct probing of chemical bonds in a quantitative way but also provides useful information regarding the generation and distribution of primary and secondary electrons. However, since high energy photons are being employed for characterization of a photosensitive material, modification of the sample during the measurement is possible and this must be considered when investigating the chemical changes in the photoresist before and after exposure to EUV light.
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Submitted 30 May, 2024;
originally announced June 2024.
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Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides
Authors:
Vladislav Voronenkov,
Benjamin Groven,
Henry Medina Silva,
Pierre Morin,
Stefan De Gendt
Abstract:
Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical performance limiter, the TMD crystal grain size strongly differs between the various CVD precursor chemistries from nano- to millimeter-sized crystals. How…
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Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical performance limiter, the TMD crystal grain size strongly differs between the various CVD precursor chemistries from nano- to millimeter-sized crystals. However, it remains unclear how the CVD precursor chemistry affects the nucleation density and resulting TMD crystal grain size. This work postulates guiding principles to design a CVD process for highly crystalline TMD deposition using a quantitative analytical model benchmarked against literature. The TMD nucleation density reduces favorably under low supersaturation conditions, where the metal precursor sorption on the starting surface is reversible and the corresponding metal precursor desorption rate exceeds the overall deposition rate. Such reversible precursor adsorption guarantees efficient long-range gas-phase lateral diffusion of precursor species in addition to short-range surface diffusion, which vitally increases crystal grain size. As such, the proposed model explains the large spread in experimentally observed TMD nucleation densities and crystal grain sizes for state-of-the-art CVD chemistries. Ultimately, it empowers the reader to interpret and modulate precursor adsorption and diffusion reactions through designing CVD precursor chemistries compatible with temperature sensitive application schemes.
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Submitted 12 March, 2024; v1 submitted 25 November, 2023;
originally announced November 2023.
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Microwave Properties of Ba-Substituted Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ after Chemical-Mechanical Polishing
Authors:
Federica Luciano,
Lieve Teugels,
Sean McMitchell,
Giacomo Talmelli,
Anaïs Guerenneur,
Renzo Stheins,
Rudy Caluwaerts,
Thierry Conard,
Inge Vaesen,
Stefanie Sergeant,
Pol Van Dorpe,
Stefan De Gendt,
Matthijn Dekkers,
Johan Swerts,
Florin Ciubotaru,
Christoph Adelmann
Abstract:
We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP resid…
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We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited by pulsed laser deposition. CMP allowed for the reduction of the root mean square surface roughness of 600 nm thick BPZT films from 12.1nm to 0.79 nm. Ammonium peroxide (SC-1) cleaning was effective to remove Si CMP residuals. Measurements of the ferroelectric hysteresis after CMP indicated that the ferroelectric properties of BPZT were only weakly affected by CMP, while the piezoelectric d33 coefficient and the microwave permittivity were reduced slightly by 10%. This can be attributed to the formation of a thin dead layer at the BPZT surface. Moreover, the intrinsic dielectric permittivity at microwave frequencies between 1 and 25 GHz was not influenced by CMP, whereas the dead layer series capacitance decreased by 10%. The results indicate that the CMP process can be used to smoothen the BPZT surface without affecting the film properties strongly.
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Submitted 21 April, 2023;
originally announced April 2023.
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Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions
Authors:
Wouter Mortelmans,
Stefan De Gendt,
Marc Heyns,
Clement Merckling
Abstract:
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a…
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The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.
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Submitted 9 October, 2020;
originally announced October 2020.
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Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling
Authors:
Wouter Mortelmans,
Karel De Smet,
Ruishen Meng,
Michel Houssa,
Stefan De Gendt,
Marc Heyns,
Clement Merckling
Abstract:
Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stac…
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Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stacking faults like 60o twins and consequently 60o grain boundaries is still of major concern for the defect-free epitaxial growth of 2D chalcogenides. Although growth strategies to overcome the occurrence of these defects are currently being considered, more fundamental understanding on the origin of these defects at the initial stages of the growth is highly essential. Therefore this work focuses on the understanding of 60o twin formation in (quasi-)vdW epitaxy of 2D chalcogenides relying on systematic molecular beam epitaxy (MBE) experiments supported by density functional theory (DFT) calculations. The MBE experiments reveal the striking difference in 60o twin formation between WSe2 and Bi2Se3 in both quasi-vdW heteroepitaxy and vdW homoepitaxy, which from our DFT calculations links to the difference in interlayer vdW coupling strength. The stronger interlayer vdW coupling in Bi2Se3 compared to WSe2 results in a striking enhanced control on twin formation and hence shows significantly more promise for defect-free epitaxial integration. This interesting aspect of (quasi-)vdW epitaxy reveals that the strength of interlayer vdW coupling is key for functional 2D materials and opens perspectives for other vdW materials sharing strong interlayer interactions.
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Submitted 8 October, 2020;
originally announced October 2020.
