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Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode
Authors:
P. Van Dorpe,
V. F. Motsnyi,
M. Nijboer,
E. Goovaerts,
V. I. Safarov,
J. Das,
W. Van Roy,
G. Borghs,
J. De Boeck
Abstract:
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polariza…
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We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.
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Submitted 25 June, 2003; v1 submitted 16 August, 2002;
originally announced August 2002.
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Spin injection and spin accumulation in all-metal mesoscopic spin valves
Authors:
F. J. Jedema,
M. S. Nijboer,
A. T. Filip,
B. J. van Wees
Abstract:
We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin injectors and detectors. For the nonmagnetic metal both aluminium (Al) and copper (Cu) are used. Ou…
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We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin injectors and detectors. For the nonmagnetic metal both aluminium (Al) and copper (Cu) are used. Our multi-terminal geometry allows us to experimentally separate the spin valve effect from other magneto resistance signals such as the anomalous magneto resistance (AMR) and Hall effects. We find that the AMR contribution of the ferromagnetic contacts can dominate the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conventional' measurement geometry. In a 'non local' spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T=4.2 K as well as at room temperature (RT). For aluminum we obtain spin relaxation lengths (lambda_{sf}) of 1.2 mu m and 600 nm at T=4.2 K and RT respectively, whereas for copper we obtain 1.0 mu m and 350 nm. The spin relaxation times tau_{sf} in Al and Cu are compared with theory and results obtained from giant magneto resistance (GMR), conduction electron spin resonance (CESR), anti-weak localization and superconducting tunneling experiments. The spin valve signals generated by the Py electrodes (alpha_F lambda_F=0.5 [1.2] nm at RT [T=4.2 K]) are larger than the Co electrodes (alpha_F lambda_F=0.3 [0.7] nm at RT [T=4.2 K]), whereas for Ni (alpha_F lambda_F<0.3 nm at RT and T=4.2 K) no spin signal is observed. These values are compared to the results obtained from GMR experiments.
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Submitted 26 July, 2002;
originally announced July 2002.
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Spin injection and spin accumulation in permalloy-copper mesoscopic spin valves
Authors:
F. J. Jedema,
M. S. Nijboer,
A. T. Filip,
B. J. van Wees
Abstract:
We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry allows us to experimentally distinguish different magneto resistance signals, being 1) the spin valve effect, 2) the anomalous magneto resistance (AMR) effect an…
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We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry allows us to experimentally distinguish different magneto resistance signals, being 1) the spin valve effect, 2) the anomalous magneto resistance (AMR) effect and 3) Hall effects. We find that the AMR contribution of the Py contacts can be much bigger than the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conventional' measurement geometry. However, these 'contact' magneto resistance signals can be used to monitor the magnetization reversal process, making it possible to determine the magnetic switching fields of the Py contacts of the spin valve device. In a 'non local' spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T=4.2 K as well as at room temperature. We obtain spin diffusion lengths in copper of 1 micrometer and 350 nm at T=4.2 K and room temperature respectively.
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Submitted 6 November, 2001;
originally announced November 2001.
