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Method for Flow Measurement in Microfluidic Channels Based on Electrical Impedance Spectroscopy
Authors:
Nima Arjmandi,
Chengxun Liu,
Willem Van Roy,
Liesbet Lagae,
Gustaaf Borghs
Abstract:
We have developed and characterized two novel micro flow sensors based on measuring the electrical impedance of the interface between the flowing liquid and metallic electrodes embedded on the channel walls. These flow sensors are very simple to fabricate and use, are extremely compact and can easily be integrated into most microfluidic systems. One of these devices is a micropore with two tantalu…
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We have developed and characterized two novel micro flow sensors based on measuring the electrical impedance of the interface between the flowing liquid and metallic electrodes embedded on the channel walls. These flow sensors are very simple to fabricate and use, are extremely compact and can easily be integrated into most microfluidic systems. One of these devices is a micropore with two tantalum/platinum electrodes on its edges; the other is a micro channel with two tantalum /platinum electrodes placed perpendicular to the channel on its walls. In both sensors the flow rate is measured via the electrical impedance between the two metallic electrodes, which is the impedance of two metal-liquid junctions in series. The dependency of the metal-liquid junction impedance on the flow rate of the liquid has been studied. The effects of different parameters on the sensor's outputs and its noise behavior are investigated. Design guidelines are extracted and applied to achieve highly sensitive micro flow sensors with low noise.
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Submitted 16 July, 2012;
originally announced July 2012.
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Enhanced Resolution of Poly-(Methyl Methacrylate) Electron Resist by Thermal Processing
Authors:
Nima Arjmandi,
Liesbet Lagae,
Gustaaf Borghs
Abstract:
Granular nanostructure of electron beam resist had limited the ultimate resolution of electron beam lithography. We report a thermal process to achieve a uniform and homogeneous amorphous thin film of poly methyl methacrylate electron resist. This thermal process consists of a short time-high temperature backing process in addition to precisely optimized development process conditions. Using this…
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Granular nanostructure of electron beam resist had limited the ultimate resolution of electron beam lithography. We report a thermal process to achieve a uniform and homogeneous amorphous thin film of poly methyl methacrylate electron resist. This thermal process consists of a short time-high temperature backing process in addition to precisely optimized development process conditions. Using this novel process, we patterned arrays of holes in a metal film with diameter smaller than 5nm. In addition, line edge roughness and surface roughness of the resist reduced to 1nm and 100pm respectively.
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Submitted 13 July, 2012;
originally announced July 2012.
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Local solid-state modification of nanopore surface charges
Authors:
Ronald Kox,
Stella Deheryan,
Chang Chen,
Nima Arjmandi,
Liesbet Lagae,
Gustaaf Borghs
Abstract:
The last decade, nanopores have emerged as a new and interesting tool for the study of biological macromolecules like proteins and DNA. While biological pores, especially alpha-hemolysin, have been promising for the detection of DNA, their poor chemical stability limits their use. For this reason, researchers are trying to mimic their behaviour using more stable, solid-state nanopores. The most su…
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The last decade, nanopores have emerged as a new and interesting tool for the study of biological macromolecules like proteins and DNA. While biological pores, especially alpha-hemolysin, have been promising for the detection of DNA, their poor chemical stability limits their use. For this reason, researchers are trying to mimic their behaviour using more stable, solid-state nanopores. The most successful tools to fabricate such nanopores use high energy electron or ions beams to drill or reshape holes in very thin membranes. While the resolution of these methods can be very good, they require tools that are not commonly available and tend to damage and charge the nanopore surface. In this work, we show nanopores that have been fabricated using standard micromachning techniques together with EBID, and present a simple model that is used to estimate the surface charge. The results show that EBID with a silicon oxide precursor can be used to tune the nanopore surface and that the surface charge is stable over a wide range of concentrations.
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Submitted 13 July, 2012;
originally announced July 2012.
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Doppler Shift in Andreev Reflection from a Moving Superconducting Condensate in Nb/InAs Josephson Junctions
Authors:
F. Rohlfing,
G. Tkachov,
F. Otto,
K. Richter,
D. Weiss,
G. Borghs,
C. Strunk
Abstract:
We study narrow ballistic Josephson weak links in a InAs quantum wells contacted by Nb electrodes and find a dramatic magnetic-field suppression of the Andreev reflection amplitude, which occurs even for in-plane field orientation with essentially no magnetic flux through the junction. Our observations demonstrate the presence of a Doppler shift in the energy of the Andreev levels, which results…
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We study narrow ballistic Josephson weak links in a InAs quantum wells contacted by Nb electrodes and find a dramatic magnetic-field suppression of the Andreev reflection amplitude, which occurs even for in-plane field orientation with essentially no magnetic flux through the junction. Our observations demonstrate the presence of a Doppler shift in the energy of the Andreev levels, which results from diamagnetic screening currents in the hybrid Nb/InAs-banks. The data for conductance, excess and critical currents can be consistently explained in terms of the sample geometry and the McMillan energy, characterizing the transparency of the Nb/InAs-interface.
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Submitted 22 October, 2009; v1 submitted 2 March, 2009;
originally announced March 2009.
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A Temperature Analysis of High-power AlGaN/GaN HEMTs
Authors:
J. Das,
H. Oprins,
H. Ji,
A. Sarua,
W. Ruythooren,
J. Derluyn,
M. Kuball,
M. Germain,
G. Borghs
Abstract:
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely…
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Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.
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Submitted 12 September, 2007;
originally announced September 2007.
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Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
Authors:
G. Brammertz,
M. Caymax,
Y. Mols,
S. Degroote,
M. Leys,
J. Van Steenbergen,
G. Winderickx,
G. Borghs,
M. Meuris
Abstract:
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth o…
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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. Nevertheless, both microscopic and macroscopic loading effects can still be observed on x-section SEM images and profilometer measurements. X-ray diffraction and low temperature photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown GaAs.
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Submitted 26 March, 2007;
originally announced March 2007.
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Selective epitaxial growth of GaAs on Ge by MOCVD
Authors:
Guy Brammertz,
Yves Mols,
Stefan Degroote,
Maarten Leys,
Jan Van Steenbergen,
Gustaaf Borghs,
Matty Caymax
Abstract:
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused…
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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti phase domains in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers.
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Submitted 26 March, 2007;
originally announced March 2007.
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Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Authors:
Guy Brammertz,
Yves Mols,
Stefan Degroote,
Vasyl Motsnyi,
Maarten Leys,
Gustaaf Borghs,
Matty Caymax
Abstract:
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
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Submitted 26 March, 2007;
originally announced March 2007.
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Zero-bias spin separation
Authors:
Sergey D. Ganichev,
Vasily V. Bel'kov,
Sergey A. Tarasenko,
Sergey N. Danilov,
Stephan Giglberger,
Christoph Hoffmann,
Eougenious L. Ivchenko,
Dieter Weiss,
Werner Wegscheider,
Christian Gerl,
Dieter Schuh,
Joachim Stahl,
Joan De Boeck,
Gustaaf Borghs,
Wilhelm Prettl
Abstract:
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric…
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Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers.
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Submitted 24 May, 2006; v1 submitted 23 May, 2006;
originally announced May 2006.
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Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode
Authors:
P. Van Dorpe,
W. Van Roy,
J. De Boeck,
G. Borghs,
P. Sankowski,
P. Kacman,
J. A. Majewski,
T. Dietl
Abstract:
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Butt…
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The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization.
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Submitted 25 February, 2005;
originally announced February 2005.
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Enhanced annealing effect in an oxygen atmosphere on GaMnAs
Authors:
M. Malfait,
J. Vanacken,
W. Van Roy,
G. Borghs,
V. V. Moshchalkov
Abstract:
We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMn…
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We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMnAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the out-diffusion of Mn_I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.
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Submitted 28 September, 2004;
originally announced September 2004.
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Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states
Authors:
J. Eroms,
D. Weiss,
J. De Boeck,
G. Borghs,
U. Zülicke
Abstract:
We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we f…
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We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes.
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Submitted 20 July, 2005; v1 submitted 14 April, 2004;
originally announced April 2004.
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Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells
Authors:
S. D. Ganichev,
V. V. Bel'kov,
L. E. Golub,
E. L. Ivchenko,
Petra Schneider,
S. Giglberger,
J. Eroms,
J. DeBoeck,
G. Borghs,
W. Wegscheider,
D. Weiss,
W. Prettl
Abstract:
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a Q…
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The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling.
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Submitted 20 June, 2003;
originally announced June 2003.
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Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode
Authors:
P. Van Dorpe,
V. F. Motsnyi,
M. Nijboer,
E. Goovaerts,
V. I. Safarov,
J. Das,
W. Van Roy,
G. Borghs,
J. De Boeck
Abstract:
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polariza…
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We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.
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Submitted 25 June, 2003; v1 submitted 16 August, 2002;
originally announced August 2002.
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Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
Authors:
V. F. Motsnyi,
V. I. Safarov,
J. De Boeck,
J. Das,
W. Van Roy,
E. Goovaerts,
G. Borghs
Abstract:
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in ex…
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We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.
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Submitted 11 October, 2001;
originally announced October 2001.
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Commensurability effects in Andreev antidot billiards
Authors:
J. Eroms,
M. Tolkiehn,
D. Weiss,
U. Rössler,
J. De Boeck,
G. Borghs
Abstract:
An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering t…
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An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering the trajectories of charge carriers in the semiconductor, when Andreev reflection at the semiconductor-superconductor interface is included. For perfect Andreev reflection, we expect a complete suppression of the commensurability features, even though motion at finite B is chaotic.
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Submitted 9 July, 2001;
originally announced July 2001.
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Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices
Authors:
J. Eroms,
M. Zitzlsperger,
D. Weiss,
J. H. Smet,
C. Albrecht,
R. Fleischmann,
M. Behet,
J. De Boeck,
G. Borghs
Abstract:
We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo form…
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We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum.
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Submitted 27 July, 1998;
originally announced July 1998.
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Reentrant behavior in the superconducting phase-dependent resistance of a disordered 2-dimensional electron gas
Authors:
S. G. den Hartog,
B. J. van Wees,
Yu. V. Nazarov,
T. M. Klapwijk,
G. Borghs
Abstract:
We have investigated the bias-voltage dependence of the phase-dependent differential resistance of a disordered T-shaped 2-dimensional electron gas coupled to two superconducting terminals. The resistance oscillations first increase upon lowering the energy. For bias voltages below the Thouless energy, the resistance oscillations are suppressed and disappear almost completely at zero bias voltag…
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We have investigated the bias-voltage dependence of the phase-dependent differential resistance of a disordered T-shaped 2-dimensional electron gas coupled to two superconducting terminals. The resistance oscillations first increase upon lowering the energy. For bias voltages below the Thouless energy, the resistance oscillations are suppressed and disappear almost completely at zero bias voltage. We find a qualitative agreement with the calculated reentrant behavior of the resistance and discuss quantitative deviations.
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Submitted 27 October, 1997;
originally announced October 1997.
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Suppression of the Coulomb interaction contribution to the conductance by a parallel magnetic field
Authors:
S. G. den Hartog,
S. J. van der Molen,
B. J. van Wees,
T. M. Klapwijk,
G. Borghs
Abstract:
The Coulomb interaction contribution to the conductance is investigated in a phase-coherent disordered 2-dimensional electron gas, which resistance can be varied by an overall gate electrode. Its magnitude of dGeei=-0.3 e^2/h is obtained by applying a bias voltage to suppress the Coulomb anomaly. In contrast to theoretical predictions, dGeei is suppressed by a parallel magnetic field. The zero-b…
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The Coulomb interaction contribution to the conductance is investigated in a phase-coherent disordered 2-dimensional electron gas, which resistance can be varied by an overall gate electrode. Its magnitude of dGeei=-0.3 e^2/h is obtained by applying a bias voltage to suppress the Coulomb anomaly. In contrast to theoretical predictions, dGeei is suppressed by a parallel magnetic field. The zero-bias magnetoresistance exhibits reproducible fluctuations in perpendicular magnetic fields on a field scale much larger than that expected for universal conductance fluctuations, which might be attributed to fluctuations in the Coulomb interaction contribution.
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Submitted 27 October, 1997;
originally announced October 1997.
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Magnetotransport in a pseudomorphic GaAs/GaInAs/GaAlAs heterostructure with a Si delta-doping layer
Authors:
M. van der Burgt,
V. C. Karavolas,
F. M. Peeters,
J. Singleton,
R. J. Nicholas,
F. Herlach,
J. J. Harris,
M. Van Hove,
G. Borghs
Abstract:
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si delta-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n_e=1.67x 10^16 m^-2. By illumination the density can be increa…
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Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si delta-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n_e=1.67x 10^16 m^-2. By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.8In0.2As QW can become populated as well as the Si delta-layer. The presence of electrons in the delta-layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as: 1) magnetic freeze-out of carriers in the delta-layer when a low density of electrons is present in the delta-layer, and 2) quantization of the electron motion in the two dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta-layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain a satisfactory agreement between model and experiment.
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Submitted 3 September, 1995; v1 submitted 31 August, 1995;
originally announced August 1995.
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Experimental determination of the quasi-particle decay length $ξ_{\text{Sm}}$ in a superconducting quantum well
Authors:
P. H. C. Magnee,
B. J. van Wees,
T. M. Klapwijk,
W. van de Graaf,
G. Borghs
Abstract:
We have investigated experimentally the electronic transport properties of a two-dimensional electron gas (2DEG) present in an AlSb/InAs/AlSb quantum well, where part of the toplayer has been replaced by a superconducting Nb strip, with an energy gap $Δ_0$. By measuring the lateral electronic transport underneath the superconductor, and comparing the experimental results with a model based on th…
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We have investigated experimentally the electronic transport properties of a two-dimensional electron gas (2DEG) present in an AlSb/InAs/AlSb quantum well, where part of the toplayer has been replaced by a superconducting Nb strip, with an energy gap $Δ_0$. By measuring the lateral electronic transport underneath the superconductor, and comparing the experimental results with a model based on the Bogoliubov-de Gennes equation and the Landauer-Büttiker formalism, we obtain a decay length $ξ_{\text{Sm}} \approx 100~\text{nm}$ for electrons. This decay length corresponds to an interface transparency $T_{\text{SIN}}=0.7$ between the Nb and InAs. Using this value, we infer an energy gap in the excitation spectrum of the SQW of $Δ_{\text{eff}} = 0.97 Δ_0 = 0.83~\text{meV}$.
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Submitted 13 February, 1995; v1 submitted 9 February, 1995;
originally announced February 1995.
