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A green solvent system for precursor phase-engineered sequential deposition of stable formamidinium lead triiodide for perovskite solar cells
Authors:
Benjamin M. Gallant,
Philippe Holzhey,
Joel A. Smith,
Saqlain Choudhary,
Karim A. Elmestekawy,
Pietro Caprioglio,
Igal Levine,
Alex Sheader,
Fengning Yang,
Daniel T. W. Toolan,
Rachel C. Kilbride,
Augustin K. A. Zaininger,
James M. Ball,
M. Greyson Christoforo,
Nakita Noel,
Laura M. Herz,
Dominik J. Kubicki,
Henry J. Snaith
Abstract:
Perovskite solar cells (PSCs) offer an efficient, inexpensive alternative to current photovoltaic technologies, with the potential for manufacture via high-throughput coating methods. However, challenges for commercial-scale solution-processing of metal-halide perovskites include the use of harmful solvents, the expense of maintaining controlled atmospheric conditions, and the inherent instabiliti…
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Perovskite solar cells (PSCs) offer an efficient, inexpensive alternative to current photovoltaic technologies, with the potential for manufacture via high-throughput coating methods. However, challenges for commercial-scale solution-processing of metal-halide perovskites include the use of harmful solvents, the expense of maintaining controlled atmospheric conditions, and the inherent instabilities of PSCs under operation. Here, we address these challenges by introducing a high volatility, low toxicity, biorenewable solvent system to fabricate a range of 2D perovskites, which highly effective precursor phases for subsequent transformation to alpha-formamidinium lead triiodide (FAPbI3), fully processed under ambient conditions. PSCs utilising our FAPbI3 reproducibly show remarkable stability under illumination and elevated temperature (ISOS-L-2) and "damp heat" (ISOS-D-3) stressing, surpassing other state-of-the-art perovskite compositions. We determine that this enhancement is a consequence of the 2D precursor phase crystallisation route, which simultaneously avoids retention of residual low-volatility solvents (such as DMF and DMSO) and reduces the rate of degradation of FA+ in the material. Our findings highlight both the critical role of the initial crystallisation process in determining the operational stability of perovskite materials, and that neat FA+-based perovskites can be competitively stable despite the inherent metastability of the alpha-phase.
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Submitted 14 June, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2
Authors:
Yuchen Fu,
Hugh Lohan,
Marcello Righetto,
Yi-Teng Huang,
Seán R. Kavanagh,
Chang-Woo Cho,
Szymon J. Zelewski,
Young Won Woo,
Harry Demetriou,
Martyn A. McLachlan,
Sandrine Heutz,
Benjamin A. Piot,
David O. Scanlon,
Akshay Rao,
Laura M. Herz,
Aron Walsh,
Robert L. Z. Hoye
Abstract:
Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered…
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Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified.
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Submitted 4 January, 2024;
originally announced January 2024.
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Disentangling the Effects of Structure and Lone-Pair Electrons in the Lattice Dynamics of Halide Perovskites
Authors:
Sebastián Caicedo-Dávila,
Adi Cohen,
Silvia G. Motti,
Masahiko Isobe,
Kyle M. McCall,
Manuel Grumet,
Maksym V. Kovalenko,
Omer Yaffe,
Laura M. Herz,
Douglas H. Fabini,
David A. Egger
Abstract:
Metal halide perovskites have shown great performance as solar energy materials, but their outstanding optoelectronic properties are paired with unusually strong anharmonic effects. It has been proposed that this intriguing combination of properties derives from the "lone pair" 6$s^2$ electron configuration of the Pb$^{2+}$ cations, and associated weak pseudo-Jahn-Teller effect, but the precise im…
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Metal halide perovskites have shown great performance as solar energy materials, but their outstanding optoelectronic properties are paired with unusually strong anharmonic effects. It has been proposed that this intriguing combination of properties derives from the "lone pair" 6$s^2$ electron configuration of the Pb$^{2+}$ cations, and associated weak pseudo-Jahn-Teller effect, but the precise impact of this chemical feature remains unclear. Here we show that in fact an $ns^2$ electron configuration is not a prerequisite for the strong anharmonicity and low-energy lattice dynamics encountered in this class of materials. We combine X-ray diffraction, infrared and Raman spectroscopies, and first-principles molecular dynamics calculations to directly contrast the lattice dynamics of CsSrBr$_3$ with those of CsPbBr$_3$, two compounds which bear close structural similarity but with the former lacking the propensity to form lone pairs on the 5$s^0$ octahedral cation. We exploit low-frequency diffusive Raman scattering, nominally symmetry-forbidden in the cubic phase, as a fingerprint to detect anharmonicity and reveal that low-frequency tilting occurs irrespective of octahedral cation electron configuration. This work highlights the key role of structure in perovskite lattice dynamics, providing important design rules for the emerging class of soft perovskite semiconductors for optoelectronic and light-harvesting devices.
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Submitted 29 January, 2024; v1 submitted 5 October, 2023;
originally announced October 2023.
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Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance
Authors:
Chelsea Q. Xia,
Maurizio Monti,
Jessica L. Boland,
Laura M. Herz,
James Lloyd-Hughes,
Marina R. Filip,
Michael B. Johnston
Abstract:
Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot separate the effects of charge-carrier recombination from effective mass changes as charges cool and experience different regions of the electronic band structure. Her…
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Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot separate the effects of charge-carrier recombination from effective mass changes as charges cool and experience different regions of the electronic band structure. Here we present a form of time-resolved magneto-THz spectroscopy which allows us to measure cyclotron effective mass on a picosecond time scale. We demonstrate this technique by observing electron cooling in the technologically-significant narrow-bandgap semiconductor indium antimonide (InSb). A significant reduction of electron effective mass from 0.032$m_\mathrm{e}$ to 0.017$m_\mathrm{e}$ is observed in the first 200ps after injecting hot electrons. Measurement of electron effective mass in InSb as a function of photo-injected electron density agrees well with conduction band non-parabolicity predictions from ab initio calculations of the quasiparticle band structure.
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Submitted 11 September, 2021;
originally announced September 2021.
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Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors
Authors:
Chelsea Q. Xia,
Jiali Peng,
Samuel Poncé,
Jay B. Patel,
Adam D. Wright,
Timothy W. Crothers,
Mathias Uller Rothmann,
Juliane Borchert,
Rebecca L. Milot,
Hans Kraus,
Qianqian Lin,
Feliciano Giustino,
Laura M. Herz,
Michael B. Johnston
Abstract:
Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of singl…
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Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge scattering in single crystals and polycrystalline films of CH$_3$NH$_3$PbI$_3$. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including transistors and modulators.
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Submitted 10 September, 2021;
originally announced September 2021.
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Cs$_2$InAgCl$_6$: A new lead-free halide double perovskite with direct band gap
Authors:
George Volonakis,
Amir A. Haghighirad,
Rebecca L. Milot,
Weng H. Sio,
Marina R. Filip,
Bernard Wenger,
Michael B. Johnston,
Laura M. Herz,
Henry J. Snaith,
Feliciano Giustino
Abstract:
A$_2$BB$^\prime$X$_6$ halide double perovskites based on bismuth and silver have recently been proposed as potential environmentally-friendly alternatives to lead-based hybrid halide perovskites. In particular, Cs$_2$BiAgX$_6$ (X = Cl, Br) have been synthesized and found to exhibit band gaps in the visible range. However, the band gaps of these compounds are indirect, which is not ideal for applic…
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A$_2$BB$^\prime$X$_6$ halide double perovskites based on bismuth and silver have recently been proposed as potential environmentally-friendly alternatives to lead-based hybrid halide perovskites. In particular, Cs$_2$BiAgX$_6$ (X = Cl, Br) have been synthesized and found to exhibit band gaps in the visible range. However, the band gaps of these compounds are indirect, which is not ideal for applications in thin film photovoltaics. Here, we propose a new class of halide double perovskites, where the B$^{3+}$ and B$^{+}$ cations are In$^{3+}$ and Ag$^{+}$, respectively. Our first-principles calculations indicate that the hypothetical compounds Cs$_2$InAgX$_6$ (X = Cl, Br, I) should exhibit direct band gaps between the visible (I) and the ultraviolet (Cl). Based on these predictions, we attempt to synthesize Cs$_2$InAgCl$_6$ and Cs$_2$InAgBr$_6$, and we succeed to form the hitherto unknown double perovskite Cs$_2$InAgCl$_6$. X-ray diffraction yields a double perovskite structure with space group $Fm\overline{3}m$. The measured band gap is 3.3 eV, and the compound is found to be photosensitive and turns reversibly from white to orange under ultraviolet illumination. We also perform an empirical analysis of the stability of Cs$_2$InAgX$_6$ and their mixed halides based on Goldschmidt's rules, and we find that it should also be possible to form Cs$_2$InAg(Cl$_{1-x}$Br$_{x}$)$_6$ for $x<1$. The synthesis of mixed halides will open the way to the development of lead-free double perovskites with direct and tunable band gaps.
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Submitted 25 January, 2017; v1 submitted 16 November, 2016;
originally announced November 2016.
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Perovskite-perovskite tandem photovoltaics with optimized bandgaps
Authors:
Giles E. Eperon,
Tomas Leijtens,
Kevin A. Bush,
Rohit Prasanna,
Thomas Green,
Jacob Tse-Wei Wang,
David P. McMeekin,
George Volonakis,
Rebecca L. Milot,
Richard May,
Axel Palmstrom,
Daniel J. Slotcavage,
Rebecca A. Belisle,
Jay B. Patel,
Elizabeth S. Parrott,
Rebecca J. Sutton,
Wen Ma,
Farhad Moghadam,
Bert Conings,
Aslihan Babayigit,
Hans-Gerd Boyen,
Stacey Bent,
Feliciano Giustino,
Laura M. Herz,
Michael B. Johnston
, et al. (2 additional authors not shown)
Abstract:
We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 % efficiency. By combining this material with a wider bandgap $FA_{0.83}Cs_{0.17}Pb(I_{0.5}Br_{0.5})_3$ material, we reach monolithic two terminal tandem efficiencies of…
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We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 % efficiency. By combining this material with a wider bandgap $FA_{0.83}Cs_{0.17}Pb(I_{0.5}Br_{0.5})_3$ material, we reach monolithic two terminal tandem efficiencies of 17.0 % with over 1.65 volts open-circuit voltage. We also make mechanically stacked four terminal tandem cells and obtain 20.3 % efficiency. Crucially, we find that our infrared absorbing perovskite cells exhibit excellent thermal and atmospheric stability, unprecedented for Sn based perovskites. This device architecture and materials set will enable 'all perovskite' thin film solar cells to reach the highest efficiencies in the long term at the lowest costs.
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Submitted 20 January, 2017; v1 submitted 12 August, 2016;
originally announced August 2016.
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Extreme sensitivity of graphene photoconductivity to environmental gases
Authors:
Callum J. Docherty,
Cheng-Te Lin,
Hannah J. Joyce,
Robin J. Nicholas,
Laura M. Herz,
Lain-Jong Li,
Michael B. Johnston
Abstract:
Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as chan…
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Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.
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Submitted 5 December, 2012;
originally announced December 2012.
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Mesoscopic order and the dimentionality of long-range resonance energy transfer in supramolecular semiconductors
Authors:
Clement Daniel,
Francois Makereel,
Laura M. Herz,
Freek J. M. Hoeben,
Pascal Jonkheijm,
Albertus P. H. J. Schenning,
E. W. Meijer,
Carlos Silva
Abstract:
We present time-resolved photoluminescence measurements on two series of oligo-p-phenylenevinylene materials that self-assemble into supramolecular nanostructures with thermotropic reversibility in dodecane. One set of derivatives form chiral, helical stacks while the second set form less organised, frustrated stacks. Here we study the effects of supramolecular organisation on the resonance ener…
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We present time-resolved photoluminescence measurements on two series of oligo-p-phenylenevinylene materials that self-assemble into supramolecular nanostructures with thermotropic reversibility in dodecane. One set of derivatives form chiral, helical stacks while the second set form less organised, frustrated stacks. Here we study the effects of supramolecular organisation on the resonance energy transfer rates. We measure these rates in nanoassemblies formed with mixed blends of oligomers and compare them with the rates predicted by Foerster theory. Our results and analysis show that control of supramolecular order in the nanometre lengthscale has a dominant effect on the efficiency and dimentionality of resonance energy transfer.
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Submitted 16 June, 2008; v1 submitted 27 April, 2007;
originally announced April 2007.
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Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
Authors:
J. Lloyd-Hughes,
T. Richards,
H. Sirringhaus,
E. Castro-Camus,
L. M. Herz,
M. B. Johnston
Abstract:
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential…
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Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trapping, rather than of changes to the mobility of free holes in the polymer.
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Submitted 18 September, 2006; v1 submitted 11 August, 2006;
originally announced August 2006.
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Exciton Regeneration at Polymeric Semiconductor Heterojunctions
Authors:
Arne C. Morteani,
Paiboon Sreearunothai,
Laura M. Herz,
Richard H. Friend,
Carlos Silva
Abstract:
Control of the band-edge offsets at heterojunctions between organic semiconductors allows efficient operation of either photovoltaic or light-emitting diodes. We investigate systems where the exciton is marginally stable against charge separation, and show via E-field-dependent time-resolved photoluminescence spectroscopy that excitons that have undergone charge separation at a heterojunction ca…
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Control of the band-edge offsets at heterojunctions between organic semiconductors allows efficient operation of either photovoltaic or light-emitting diodes. We investigate systems where the exciton is marginally stable against charge separation, and show via E-field-dependent time-resolved photoluminescence spectroscopy that excitons that have undergone charge separation at a heterojunction can be efficiently regenerated. This is because the charge transfer produces a geminate electron-hole pair (separation 2.2-3.1nm) which may collapse into an exciplex and then endothermically (E=100-200meV) back-transfer towards the exciton.
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Submitted 8 April, 2004;
originally announced April 2004.
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Exciton bimolecular annihilation dynamics in supramolecular nanostructures of conjugated oligomers
Authors:
Clément Daniel,
Laura M. Herz,
Carlos Silva,
Freek J. M. Hoeben,
Pascal Jonkheijm,
Albertus P. H. J. Schenning,
E. W. Meijer
Abstract:
We present femtosecond transient absorption measurements on $π$-conjugated supramolecular assemblies in a high pump fluence regime. Oligo(\emph{p}-phenylenevinylene) monofunctionalized with ureido-\emph{s}-triazine (MOPV) self-assembles into chiral stacks in dodecane solution below 75$^{\circ}$C at a concentration of $4\times 10^{-4}$ M. We observe exciton bimolecular annihilation in MOPV stacks…
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We present femtosecond transient absorption measurements on $π$-conjugated supramolecular assemblies in a high pump fluence regime. Oligo(\emph{p}-phenylenevinylene) monofunctionalized with ureido-\emph{s}-triazine (MOPV) self-assembles into chiral stacks in dodecane solution below 75$^{\circ}$C at a concentration of $4\times 10^{-4}$ M. We observe exciton bimolecular annihilation in MOPV stacks at high excitation fluence, indicated by the fluence-dependent decay of $1^1$B$_{u}$-exciton spectral signatures, and by the sub-linear fluence dependence of time- and wavelength-integrated photoluminescence (PL) intensity. These two characteristics are much less pronounced in MOPV solution where the phase equilibrium is shifted significantly away from supramolecular assembly, slightly below the transition temperature. A mesoscopic rate-equation model is applied to extract the bimolecular annihilation rate constant from the excitation fluence dependence of transient absorption and PL signals. The results demonstrate that the bimolecular annihilation rate is very high with a square-root dependence in time. The exciton annihilation results from a combination of fast exciton diffusion and resonance energy transfer. The supramolecular nanostructures studied here have electronic properties that are intermediate between molecular aggregates and polymeric semiconductors.
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Submitted 28 November, 2003;
originally announced November 2003.
