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Skin Effect of Nonlinear Optical Responses in Antiferromagnets
Authors:
Hang Zhou,
Rui-Chun Xiao,
Shu-Hui Zhang,
Wei Gan,
Hui Han,
Hong-Miao Zhao,
Wenjian Lu,
Changjin Zhang,
Yuping Sun,
Hui Li,
Ding-Fu Shao
Abstract:
Nonlinear optics plays important roles in the research of fundamental physics and the applications of highperformance optoelectronic devices. The bulk nonlinear optical responses arise from the uniform light absorption in noncentrosymmetric crystals, and hence are usually considered to be the collective phenomena of all atoms. Here we show, in contrast to this common expectation, the nonlinear opt…
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Nonlinear optics plays important roles in the research of fundamental physics and the applications of highperformance optoelectronic devices. The bulk nonlinear optical responses arise from the uniform light absorption in noncentrosymmetric crystals, and hence are usually considered to be the collective phenomena of all atoms. Here we show, in contrast to this common expectation, the nonlinear optical responses in antiferromagnets can be selectively accumulated near the surfaces, representing a skin effect. This is because the inversion symmetry, despite being broken globally, is barely violated locally deeply inside these antiferromagnets. Using A-type layered antiferromagnets as the representatives, we predict that the spatial-dependent nonlinear optical responses, such as bulk photovoltaic effect (BPVE) and second harmonic generation (SHG), are notable in the top- and bottom-most layers and decay rapidly when moving away from the surfaces. Such a phenomenon exists in a broad range of antiferromagnets composed of centrosymmetric sublattices, offering promising device applications using these antiferromagnets. Our work uncovers a previously overlooked property of nonlinear optical responses and opens new opportunities for high-performance antiferromagnetic optospintronics.
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Submitted 11 July, 2024;
originally announced July 2024.
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Isolated anions induced high ionic conductivity
Authors:
Qifan Yang,
Jing Xu,
Yuqi Wang,
Xiao Fu,
Ruijuan Xiao,
Hong Li
Abstract:
One of the key materials in solid-state lithium batteries is fast ion conductors. However, the Li+ ion transport in inorganic crystals involves complex factors, making it a mystery to find and design ion conductors with low migration barriers. In this work, a distinctive structural characteristic involving isolated anions has been discovered to enhance high ionic conductivity in crystals. It is an…
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One of the key materials in solid-state lithium batteries is fast ion conductors. However, the Li+ ion transport in inorganic crystals involves complex factors, making it a mystery to find and design ion conductors with low migration barriers. In this work, a distinctive structural characteristic involving isolated anions has been discovered to enhance high ionic conductivity in crystals. It is an effective way to create a smooth energy potential landscape and construct local pathways for lithium ion migration. By adjusting the spacing and arrangement of the isolated anions, these local pathways can connect with each other, leading to high ion conductivity. By designing different space groups and local environments of the Se2- anions in the Li8SiSe6 composition, combined with the ion transport properties obtained from AIMD simulations, we define isolated anions and find that local environment with higher point group symmetry promotes the formation of cage-like local transport channels. Additionally, the appropriate distance between neighboring isolated anions can create coplanar connections between adjacent cage-like channels. Furthermore, different types of isolated anions can be used to control the distribution of cage-like channels in the lattice. Based on the structural characteristic of isolated anions, we discovered compounds with isolated N3-, Cl-, I-, and S2- features from the crystal structure databases. The confirmation of ion transport in these structures validates the proposed design method of using isolated anions as structural features for fast ion conductors and leads to the discovery of several new fast ion conductor materials.
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Submitted 4 June, 2024;
originally announced June 2024.
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A family of air-stable chalcogenide solid electrolytes in Li$_2$BMQ$_4$ (B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems
Authors:
Huican Mao,
Xiang Zhu,
Guangmao Li,
Jie Pang,
Junfeng Hao,
Liqi Wang,
Hailong Yu,
Youguo Shi,
Fan Wu,
Shilie Pan,
Ruijuan Xiao,
Hong Li,
Liquan Chen
Abstract:
Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow L…
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Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow Li$^+$ ion migration activation energy (0.16 eV ~ 0.56 eV) and considerable bandgaps varying between ~ 2 eV and 3.5 eV. We have successfully synthesized Li$_2$BaSnS$_4$ and Li$_2$SrSiS$_4$, and they exhibit excellent moisture stability through H$_2$S gas measurements. Electrochemical impedance measurements indicate 2114 systems show the typical features of solid ionic conductors, with a room-temperature Li$^+$ conductivity close to 5$\times$10$^{-4}$ mS/cm aligning with our molecular dynamics simulations. Furthermore, we have theoretically investigated the substitution of Cl$^-$ at S$^{2-}$ site. The doped compounds display significantly higher conductivity, with an increase of about three orders of magnitude (up to a maximum of 0.72 mS/cm) compared to the undoped compounds. These findings offer valuable insights for the further exploration of potential chalcogenide solid electrolyte materials with robust air stability and enhanced ionic conductivity for practical applications in lithium-ion batteries.
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Submitted 6 May, 2024;
originally announced May 2024.
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Anomalous electronic energy relaxation and soft phonons in the Dirac semimetal Cd$_3$As$_2$
Authors:
Rishi Bhandia,
David Barbalas,
Run Xiao,
Juan R. Chamorro,
Tanya Berry,
Tyrel M. McQueen,
Nitin Samarth,
N. P. Armitage
Abstract:
We have used a combination of linear response time-domain THz spectroscopy (TDTS) and high-field non-linear THz spectroscopy to separately probe the electronic momentum and energy relaxation rates respectively of the Dirac semimetal Cd$_3$As$_2$. We find, consistent with prior measurements, that Cd$_3$As$_2$ has an enormous nonlinearities in the THz frequency range. We extract the momentum relaxat…
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We have used a combination of linear response time-domain THz spectroscopy (TDTS) and high-field non-linear THz spectroscopy to separately probe the electronic momentum and energy relaxation rates respectively of the Dirac semimetal Cd$_3$As$_2$. We find, consistent with prior measurements, that Cd$_3$As$_2$ has an enormous nonlinearities in the THz frequency range. We extract the momentum relaxation rate of Cd$_3$As$_2$ using Drude fits to the optical conductivity. We also conduct THz range 2D coherent spectroscopy. The dominant response is a pump-probe signal, which allow us to separately extract the energy relaxation rate. We find that the rate of energy relaxation decreases down to the lowest measured temperatures. We connect this to Cd$_3$As$_2$ anomalous lattice dynamics, evidence for which is found in its low thermal conductivity and soft phonons in Raman scattering. The lack of a peak in the energy relaxation rate as a function of T can be connected to the linear in T dependence of the current relaxation e.g. the phonon scattering is elastic down to the lowest measured temperatures approximately 120 K.
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Submitted 30 July, 2024; v1 submitted 5 May, 2024;
originally announced May 2024.
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Revealing the spatial nature of sublattice symmetry
Authors:
Rong Xiao,
Y. X. Zhao
Abstract:
The sublattice symmetry on a bipartite lattice is commonly regarded as the chiral symmetry in the AIII class of the tenfold Altland-Zirnbauer classification. Here, we reveal the spatial nature of sublattice symmetry, and show that this assertion holds only if the periodicity of primitive unit cells agrees with that of the sublattice labeling. In cases where the periodicity does not agree, sublatti…
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The sublattice symmetry on a bipartite lattice is commonly regarded as the chiral symmetry in the AIII class of the tenfold Altland-Zirnbauer classification. Here, we reveal the spatial nature of sublattice symmetry, and show that this assertion holds only if the periodicity of primitive unit cells agrees with that of the sublattice labeling. In cases where the periodicity does not agree, sublattice symmetry is represented as a glide reflection in energy-momentum space, which inverts energy and simultaneously translates some $k$ by $π$, leading to substantially different physics. Particularly, it introduces novel constraints on zero modes in semimetals and completely alters the classification table of topological insulators compared to class AIII. Notably, the dimensions corresponding to trivial and nontrivial classifications are switched, and the nontrivial classification becomes $\mathbb{Z}_2$ instead of $\mathbb{Z}$. We have applied these results to several models, including the Hofstadter model both with and without dimerization.
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Submitted 8 May, 2024; v1 submitted 17 April, 2024;
originally announced April 2024.
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Efficient Learning Strategy for Predicting Glass Forming Ability in Imbalanced Datasets of Bulk Metallic Glasses
Authors:
Xuhe Gong,
Jiazi Bi,
Xiaobin Liu,
Ran Li,
Ruijuan Xiao,
Tao Zhang,
Hong Li
Abstract:
The prediction of glass forming ability (GFA) and various properties in bulk metallic glasses (BMGs) pose a challenge due to the unique disordered atomic structure in this type of materials. Machine learning shows the potential ability to find a way out. However, the training set from the experimental data of BMGs faces the issue of data imbalance, including the distribution of data related to ele…
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The prediction of glass forming ability (GFA) and various properties in bulk metallic glasses (BMGs) pose a challenge due to the unique disordered atomic structure in this type of materials. Machine learning shows the potential ability to find a way out. However, the training set from the experimental data of BMGs faces the issue of data imbalance, including the distribution of data related to elements, the range of performance data, and the distribution of sparse and dense data area in each specific system. In this work, the origin of the data imbalance and its impact on the GFA prediction ability of machine learning models are analyzed. We propose the solutions by training the model using the pruned dataset to mitigate the imbalance and by performing an active experimental iterative learning to compensate for the information loss resulting from data reduction. The strategy is proved in Zr-Al-Cu system, and the automated workflow has been established. It effectively avoids the prediction results from trapping into the intensive training data area or from inducing by the data distribution of similar element systems. This approach will expedite the development of new BMGs compositions especially for unexplored systems.
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Submitted 21 March, 2024;
originally announced March 2024.
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Mechanistic Insights into Temperature Effects for Ionic Conductivity in Li6PS5Cl
Authors:
Zicun Li,
Jianxing Huang,
Xinguo Ren,
Jinbin Li,
Ruijuan Xiao,
Hong Li
Abstract:
Ensuring solid-state lithium batteries perform well across a wide temperature range is crucial for their practical use. Molecular dynamics (MD) simulations can provide valuable insights into the temperature dependence of the battery materials, however, the high computational cost of ab initio MD poses challenges for simulating ion migration dynamics at low temperatures. To address this issue, accu…
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Ensuring solid-state lithium batteries perform well across a wide temperature range is crucial for their practical use. Molecular dynamics (MD) simulations can provide valuable insights into the temperature dependence of the battery materials, however, the high computational cost of ab initio MD poses challenges for simulating ion migration dynamics at low temperatures. To address this issue, accurate machine-learning interatomic potentials were trained, which enable efficient and reliable simulations of the ionic diffusion processes in Li6PS5Cl over a large temperature range for long-time evolution. Our study revealed the significant impact of subtle lattice parameter variations on Li+ diffusion at low temperatures and identified the increasing influence of surface contributions as the temperature decreases. Our findings elucidate the factors influencing low temperature performance and present strategic guidance towards improving the performance of solid-state lithium batteries under these conditions.
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Submitted 21 March, 2024;
originally announced March 2024.
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Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial
Authors:
Ruqiao Xia,
Nikita W. Almond,
Stephen J. Kindness,
Sergey A. Mikhailov,
Wadood Tadbier,
Riccardo Degl'Innocenti,
Yuezhen Lu,
Abbie Lowe,
Ben Ramsay,
Lukas A. Jakob,
James Dann,
Stephan Hofmann,
Harvey E. Beere,
David A. Ritchie,
Wladislaw Michailow
Abstract:
Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly…
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Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology.
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Submitted 26 December, 2023;
originally announced December 2023.
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Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures
Authors:
Hemian Yi,
Yi-Fan Zhao,
Ying-Ting Chan,
Jiaqi Cai,
Ruobing Mei,
Xianxin Wu,
Zi-Jie Yan,
Ling-Jie Zhou,
Ruoxi Zhang,
Zihao Wang,
Stephen Paolini,
Run Xiao,
Ke Wang,
Anthony R. Richardella,
John Singleton,
Laurel E. Winter,
Thomas Prokscha,
Zaher Salman,
Andreas Suter,
Purnima P. Balakrishnan,
Alexander J. Grutter,
Moses H. W. Chan,
Nitin Samarth,
Xiaodong Xu,
Weida Wu
, et al. (2 additional authors not shown)
Abstract:
When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferr…
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When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation.
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Submitted 7 December, 2023;
originally announced December 2023.
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X-Type Antiferromagnets
Authors:
Shui-Sen Zhang,
Zi-An Wang,
Bo Li,
Shu-Hui Zhang,
Rui-Chun Xiao,
Lan-Xin Liu,
X. Luo,
W. J. Lu,
Mingliang Tian,
Y. P. Sun,
Evgeny Y. Tsymbal,
Haifeng Du,
Ding-Fu Shao
Abstract:
Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered cry…
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Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered crystals, where the stacking of two magnetic sublattices form an orthogonal pattern of intersecting atomic chains. These largely unexplored X-type antiferromagnets reveal unique spin-dependent transport properties that are not present in conventional magnets. Using $β$-Fe2PO5 as a representative example of such X-type antiferromagnets, we predict the emergence of sublattice-selective spin-polarized transport, where one magnetic sublattice is conducting, while the other is not. As a result, spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the Nèel vector capable of deterministic switching of the antiferromagnetic domains. Our work uncovers a previously overlooked type of magnetic moment alignment in antiferromagnets and reveals sublattice-selective physical properties promising for high-performance spintronic applications.
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Submitted 20 October, 2023;
originally announced October 2023.
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Effective electrical manipulation of topological antiferromagnet by orbital Hall effect
Authors:
Zhenyi Zheng,
Tao Zeng,
Tieyang Zhao,
Shu Shi,
Lizhu Ren,
Tongtong Zhang,
Lanxin Jia,
Youdi Gu,
Rui Xiao,
Hengan Zhou,
Qihan Zhang,
Jiaqi Lu,
Guilei Wang,
Chao Zhao,
Huihui Li,
Beng Kang Tay,
Jingsheng Chen
Abstract:
Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital H…
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Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital Hall effect originated from metal Mn or oxide CuOx. While Mn3Sn is proven to be able to convert orbit current to spin current by itself, we find that inserting a heavy metal layer like Pt with proper thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behavior of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity, which is beneficial for constructing artificial neural network with high accuracy. Our work paves an alternative way to manipulate topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.
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Submitted 14 October, 2023;
originally announced October 2023.
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Prediction of Giant Tunneling Magnetoresistance in RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (110) Antiferromagnetic Tunnel Junctions
Authors:
Yuan-Yuan Jiang,
Zi-An Wang,
Kartik Samanta,
Shu-Hui Zhang,
Rui-Chun Xiao,
W. J. Lu,
Y. P. Sun,
Evgeny Y. Tsymbal,
Ding-Fu Shao
Abstract:
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a…
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Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a series of barrier layer thicknesses, and different interface terminations, indicating the robustness of this effect. We show that the predicted TMR cannot be explained in terms of the global transport spin-polarization of RuO$_{2}$ (110) but is well understood based on matching the momentum-dependent spin-polarized conduction channels of the two RuO$_{2}$ (110) electrodes. We predict oscillations of TMR with increasing barrier thickness, indicating a non-negligible contribution from the perfectly epitaxial interfaces. Our work helps the understanding of the physics of TMR in AFMTJs and aids in realizing efficient AFM spintronic devices.
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Submitted 8 November, 2023; v1 submitted 5 September, 2023;
originally announced September 2023.
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Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure
Authors:
Arpita Mitra,
Run Xiao,
Wilson Yanez,
Yongxi Ou,
Juan Chamorro,
Tyrel McQueen,
Alexander J. Grutter,
Julie A. Borchers,
Michael R. Fitzsimmons,
Timothy R. Charlton,
Nitin Samarth
Abstract:
Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn…
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Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$).
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Submitted 1 June, 2023;
originally announced June 2023.
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LiY(SO$_4$)$_2$: A Superionic Material Synthesized by Superionic State Hidden in no-Superionic Literature
Authors:
Siyuan Wu,
Ruijuan Xiao,
Hong Li,
Liquan Chen
Abstract:
A potential superionic material LiY(SO$_4$)$_2$ has been excavated from the published literatures because its synthesis method and experiment data implied it exists the superionic state. We use \textit{ab initio} calculation to analyzing the differences between solid state and superionic state. We found the diffusion of Li$^+$ from the lattice site to the interstitial site will change the nearest…
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A potential superionic material LiY(SO$_4$)$_2$ has been excavated from the published literatures because its synthesis method and experiment data implied it exists the superionic state. We use \textit{ab initio} calculation to analyzing the differences between solid state and superionic state. We found the diffusion of Li$^+$ from the lattice site to the interstitial site will change the nearest neighbor numbers of O atom from 4 to 8. In order to reduce energy, the reorientation of SO$_4^{2-}$ must exist accompany with the diffusion of Li$^+$ so the nearest neighbor number of O will keep about 5 in the superionic state. Our work not only presents an example for discovering materials from literatures based on prior knowledge but also reveals the micromechanism of cation-anion coupled dynamics for superionic state.
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Submitted 18 April, 2023;
originally announced April 2023.
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Exceptional entanglement in non-Hermitian fermionic models
Authors:
Wei-Zhu Yi,
Yong-Ju Hai,
Rong Xiao,
Wei-Qiang Chen
Abstract:
Exotic singular objects, known as exceptional points, are ubiquitous in non-Hermitian physics. They might be spectral singularities in energy bands that produce anomalous effects and defectiveness. The quantum entanglement of a generic non-Hermitian model with two different types of spectral exceptional points (SEPs) is systematically investigated in this paper. We discovered a relationship betwee…
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Exotic singular objects, known as exceptional points, are ubiquitous in non-Hermitian physics. They might be spectral singularities in energy bands that produce anomalous effects and defectiveness. The quantum entanglement of a generic non-Hermitian model with two different types of spectral exceptional points (SEPs) is systematically investigated in this paper. We discovered a relationship between non-unitary conformal field theories and the $k$-linear-type SEPs, which is typically associated with $\mathcal{PT}$-symmetry or pesdo-Hermicity spontaneous breaking. The underlying association between $k$-square-root-type SEPs, which arise concurrently with real (imaginary) gap closing in the complex spectrum, mimicking first-order-phase-transition criticalities, and complex conformal field theories (cCFTs) is addressed through the calculation of complex central charges. From the entanglement spectrum, zero-energy exceptional modes are found to be distinct from normal zero modes or topological boundary modes. Finally, we include a brief discussion of analogous non-Hermitian quantum spin models and endeavor to establish an intuitive understanding of exceptional points through the spin picture in various scenarios.
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Submitted 13 April, 2023;
originally announced April 2023.
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Robust 3.7 V-Na$_{2/3}$[Cu$_{1/3}$Mn$_{2/3}$]O$_2$ Cathode for Na-ion Batteries
Authors:
Xiaohui Rong,
Xingguo Qi,
Quan Zhou,
Libin Kang,
Dongdong Xiao,
Ruijuan Xiao,
Feixiang Ding,
Yang Yang,
Yuan Liu,
Yun Su,
Shiguang Zhang,
Lunhua He,
Yaxiang Lu,
Liquan Chen,
Yong-Sheng Hu
Abstract:
Na-ion batteries (NIBs), which are recognized as a next-generation alternative technology for energy storage, still suffer from commercialization constraints due to the lack of low-cost, high-performance cathode materials. Since our first discovery of Cu$^{3+}$/Cu$^{2+}$ electrochemistry in 2014, numerous Cu-substituted/doped materials have been designed for NIBs. However for almost ten years, the…
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Na-ion batteries (NIBs), which are recognized as a next-generation alternative technology for energy storage, still suffer from commercialization constraints due to the lack of low-cost, high-performance cathode materials. Since our first discovery of Cu$^{3+}$/Cu$^{2+}$ electrochemistry in 2014, numerous Cu-substituted/doped materials have been designed for NIBs. However for almost ten years, the potential of Cu$^{3+}$/Cu$^{2+}$ electrochemistry has been grossly underappreciated and normally regarded as a semielectrochemically active redox. Here, we re-synthesized P2-Na$_{2/3}$[Cu$_{1/3}$Mn$_{2/3}$]O$_2$ and reinterpreted it as a high-voltage, cost-efficient, air-stable, long-life, and high-rate cathode material for NIBs, which demonstrates a high operating voltage of 3.7 V and a completely active Cu$^{3+}$/Cu$^{2+}$ redox reaction. The 2.3 Ah cylindrical cells exhibit excellent cycling (93.1% capacity after 2000 cycles), high rate (97.2% capacity at 10C rate), good low-temperature performance (86.6% capacity at -30$^\circ$C), and high safety, based on which, a 56 V-11.5 Ah battery pack for E-bikes is successfully constructed, exhibiting stable cycling (96.5% capacity at the 800th cycle) and a long driving distance (36 km, tester weight 65 kg). This work offers a commercially feasible cathode material for low-cost, high-voltage NIBs, paving the way for advanced NIBs in power and stationary energy storage applications.
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Submitted 27 March, 2023;
originally announced March 2023.
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Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2
Authors:
Run Xiao,
Saurav Islam,
Wilson Yanez,
Yongxi Ou,
Nitin Samarth,
Haiwen Liu,
X. C. Xie,
Juan Chamorro,
Tyrel M. McQueen
Abstract:
Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universa…
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Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universal conductance fluctuations in top-gated nanowires of the prototypical Dirac semimetal Cd3As2. As the magnetic field is increased beyond the phase-breaking field, we find a factor of sqrt(2) reduction in the magnitude of the universal conductance fluctuations, in agreement with numerical calculations that study the effect of broken time reversal symmetry in a 3D Dirac semimetal. In contrast, the magnitude of the fluctuations increases monotonically as the chemical potential is gated away from the charge neutrality point. This effect cannot be attributed to broken inversion symmetry, but can be explained by Fermi surface anisotropy. The concurrence between experimental data and theory in our study provides unequivocal evidence that universal conductance fluctuations are the dominant source of intrinsic transport fluctuations in mesoscopic Cd3As2 devices and offers a promising general methodology for probing the effects of broken symmetry in topological quantum materials.
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Submitted 23 February, 2023;
originally announced February 2023.
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Néel Spin Currents in Antiferromagnets
Authors:
Ding-Fu Shao,
Yuan-Yuan Jiang,
Jun Ding,
Shu-Hui Zhang,
Zi-An Wang,
Rui-Chun Xiao,
Gautam Gurung,
W. J. Lu,
Y. P. Sun,
Evgeny Y. Tsymbal
Abstract:
Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through dif…
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Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intra-sublattice coupling (hopping) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO$_{2}$ and Fe$_{4}$GeTe$_{2}$ as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin-polarization produce a sizable field-like STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics.
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Submitted 5 December, 2022;
originally announced December 2022.
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Anomalous anisotropy of spin current in a cubic spin source with noncollinear antiferromagnetism
Authors:
Cuimei Cao,
Shiwei Chen,
Rui-Chun Xiao,
Zengtai Zhu,
Guoqiang Yu,
Yangping Wang,
Xuepeng Qiu,
Liang Liu,
Tieyang Zhao,
Ding-Fu Shao,
Yang Xu,
Jingsheng Chen,
Qingfeng Zhan
Abstract:
Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined tim…
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Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.
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Submitted 9 November, 2022;
originally announced November 2022.
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Classification of second harmonic generation effect in magnetically ordered materials
Authors:
Rui-Chun Xiao,
Ding-Fu Shao,
Wei Gan,
Huan-Wen Wang,
Hui Han,
Z. G. Sheng,
Changjin Zhang,
Hua Jiang,
Hui Li
Abstract:
The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straigh…
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The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straightforward approach to connect magnetic order and SHG effect. The characteristics of the SHG tensors in all magnetic point groups are studied using the isomorphic group method, followed by a comprehensive SHG effect classification scheme that includes seven types based on the symmetries of the magnetic phases and their corresponding parent phases. In addition, a tensor dictionary containing the SHG and linear magneto-optic (LMO) effect is established. Furthermore, an extensive SHG database of magnetically ordered materials is also built up. This classification strategy exposes an anomalous SHG effect with even characteristic under time-reversal symmetry, which is solely contributed by magnetic structure. Moreover, the proposed classification scheme facilitates the determination of magnetic structures through SHG effect.
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Submitted 15 August, 2023; v1 submitted 8 November, 2022;
originally announced November 2022.
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Andreev processes in mesoscopic multi-terminal graphene Josephson junctions
Authors:
Fan Zhang,
Asmaul Smitha Rashid,
Mostafa Tanhayi Ahari,
Wei Zhang,
Krishnan Mekkanamkulam Ananthanarayanan,
Run Xiao,
George J. de Coster,
Matthew J. Gilbert,
Nitin Samarth,
Morteza Kayyalha
Abstract:
There is growing interest in using multi-terminal Josephson junctions (MTJJs) as a platform to artificially emulate topological phases and to investigate complex superconducting mechanisms such as quartet and multiplet Cooper pairings. Current experimental signatures in MTJJs have led to conflicting interpretations of the salient features. In this work, we report a collaborative experimental and t…
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There is growing interest in using multi-terminal Josephson junctions (MTJJs) as a platform to artificially emulate topological phases and to investigate complex superconducting mechanisms such as quartet and multiplet Cooper pairings. Current experimental signatures in MTJJs have led to conflicting interpretations of the salient features. In this work, we report a collaborative experimental and theoretical investigation of graphene-based four-terminal Josephson junctions. We observe resonant features in the differential resistance maps that resemble those ascribed to multiplet Cooper pairings. To understand these features, we model our junctions using a circuit network of coupled two-terminal resistively and capacitively shunted junctions (RCSJs). Under appropriate bias current, the model predicts that a current flowing between two diagonal terminals in a four-terminal geometry may be represented as a sinusoidal function of a weighted sum of the superconducting phases. We show that starting from a semi-classical model with diffusive current-phase relations, the MTJJ effectively emulates a general form of the expected current-phase relation for multiplet Cooper pairings. Our study therefore suggests that differential resistance measurements alone are insufficient to conclusively distinguish resonant Andreev reflection processes from semi-classical circuit-network effects.
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Submitted 24 October, 2022; v1 submitted 9 October, 2022;
originally announced October 2022.
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Spin-Neutral Tunneling Anomalous Hall Effect
Authors:
Ding-Fu Shao,
Shu-Hui Zhang,
Rui-Chun Xiao,
Zi-An Wang,
W. J. Lu,
Y. P. Sun,
Evgeny Y. Tsymbal
Abstract:
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagne…
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Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagnetic (AFM) tunnel junction where an AFM electrode with a non-spin-degenerate Fermi surface and a normal metal electrode are separated by a non-magnetic barrier with strong spin-orbit coupling (SOC). The symmetry mismatch between the AFM electrode and the SOC barrier results in an asymmetric spin-dependent momentum filtering of the spin-neutral longitudinal current generating the transverse Hall current in each electrode. We predict a sizable spin-neutral TAHE in an AFM tunnel junction with a RuO$_{2}$-type AFM electrode and a SnTe-type SOC barrier and show that the Hall currents are reversible by the Néel vector switching. With the Hall angle being comparable to that in conventional AHE bulk materials, the predicted spin-neutral TAHE can be used for the Néel vector detection in antiferromagnetic spintronics.
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Submitted 27 July, 2022;
originally announced July 2022.
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Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films
Authors:
Run Xiao,
Junyi Zhang,
Juan Chamorro,
Jinwoong Kim,
Tyrel M. McQueen,
David Vanderbilt,
Morteza Kayyalha,
Yi Li,
Nitin Samarth
Abstract:
We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quan…
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We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau level spin degeneracy at ν = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivity. Tight-binding calculations show that the enhanced g-factor likely arises from a combination of quantum confinement and corrections from nearby subbands. We also comment on the magnetic field induced transition from an insulator to a quantum Hall liquid when the chemical potential is near the charge neutrality point.
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Submitted 18 July, 2022;
originally announced July 2022.
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Optical characterization of dyed liquid crystal cells
Authors:
Obeng Appiagyei Addai,
Ruilin Xiao,
Xiaoyu Zheng,
Peter Palffy-Muhoray
Abstract:
The guest-host liquid crystal display, first proposed in 1968, relies on controlling the orientation of dichroic dyes dissolved in a nematic liquid crystal host. Controlling the orientation of the liquid crystal and of the dissolved dye with an electric field allows control of the transmittance of the cell. Knowing the dielectric properties at optical frequencies of the dye and liquid crystal mixt…
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The guest-host liquid crystal display, first proposed in 1968, relies on controlling the orientation of dichroic dyes dissolved in a nematic liquid crystal host. Controlling the orientation of the liquid crystal and of the dissolved dye with an electric field allows control of the transmittance of the cell. Knowing the dielectric properties at optical frequencies of the dye and liquid crystal mixtures is crucial for the optimal design of guest-host liquid crystal devices. In this work, the dielectric functions of various layers in liquid crystal cells are described by models obeying the Kramers-Kronig relations: the Sellmeier equation for transparent layers and causal Gaussian oscillator model for absorbing layers. We propose a systematic way to accurately model the dielectric response of each layer by minimizing the sum of squared differences between the measured transmittance spectrum of a guest-host cell in the near-UV/vis range and the prediction of the transmittance of the modeled multilayer structure. By measuring the transmittance for incident light polarized parallel and perpendicular to the nematic director allows us to separately characterize the two principal dielectric functions of the uniaxial sample. Our results show that the causal Gaussian oscillator model can accurately characterize the dielectric functions of dyes in liquid crystals.
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Submitted 29 August, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Giant spin torque efficiency in naturally oxidized polycrystalline TaAs thin films
Authors:
Wilson Yanez,
Yongxi Ou,
Run Xiao,
Supriya Ghosh,
Jyotirmay Dwivedi,
Emma Steinebronn,
Anthony Richardella,
K. Andre Mkhoyan,
Nitin Samarth
Abstract:
We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurement…
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We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurements in samples with an oxidized interface yield a spin torque efficiency as large as $ξ_{\mathrm{FMR}}=0.45\pm 0.25$ for a 8 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness. By studying ST-FMR in these samples with varying Ni$_{0.8}$Fe$_{0.2}$ layer thickness, we extract a damping-like torque efficiency as high as $ξ_{\mathrm{DL}}=1.36\pm 0.66$. In samples with a pristine (unoxidized) interface, the spin torque efficiency has opposite sign to that observed in oxidized samples ($ξ_{\mathrm{FMR}}=-0.27\pm 0.14$ for a 5 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness). We also find a lower bound on the spin Hall conductivity ($424 \pm 110 \frac{\hbar}{e}$ S/cm) which is surprisingly consistent with theoretical predictions for the single crystal Weyl semimetal state of TaAs.
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Submitted 21 February, 2022;
originally announced February 2022.
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Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$
Authors:
J. Yan,
Z. Z. Jiang,
R. C. Xiao,
W. J. Lu,
W. H. Song,
X. B. Zhu,
X. Luo,
Y. P. Sun,
M. Yamashita
Abstract:
The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this…
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The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this paper, we perform the detailed magnetoresistance (MR) and Hall measurements to study the magnetotransport properties of this material. We find that the transport is strongly influenced by the spin configuration of the Eu moments from the concomitant change in the field dependence of the MR and that of the magnetization below the Néel temperature. Most importantly, an anomalous Hall effect (AHE) and a large topological Hall effect (THE) are observed. We suggest that the AHE is originated from a nonvanishing net Berry curvature due to the helical spin structure and that the THE is attributed to the formation of a noncoplanar spin texture with a finite scalar spin chirality induced by the external magnetic field in EuIn$_2$As$_2$. Our studies provide a platform to understand the influence of the interplay between the topology of electronic bands and the field-induced magnetic structure on magnetoelectric transport properties. In addition, our observations give a hint to realize axion insulator states and high-order topological insulator states through manipulating the magnetic state of EuIn$_2$As$_2$.
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Submitted 2 February, 2022;
originally announced February 2022.
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Switchable and unswitchable bulk photovoltaic effect in two-dimensional interlayer-sliding ferroelectrics
Authors:
Rui-Chun Xiao,
Yang Gao,
Hua Jiang,
Wei Gan,
Changjin Zhang,
Hui Li
Abstract:
Spontaneous polarization and bulk photovoltaic effect (BPVE) are two concomitant physical properties in ferroelectric materials. The flipping of ferroelectric order usually accompanies with the switching of BPVE as both of them are reversed under the inversion symmetry. In this study, we report the distinctive BPVE characters in two-dimensional (2D) interlayer sliding ferroelectric materials featu…
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Spontaneous polarization and bulk photovoltaic effect (BPVE) are two concomitant physical properties in ferroelectric materials. The flipping of ferroelectric order usually accompanies with the switching of BPVE as both of them are reversed under the inversion symmetry. In this study, we report the distinctive BPVE characters in two-dimensional (2D) interlayer sliding ferroelectric materials featuring unswitchable in-plane BPVE (light-induced photocurrent in the xy plane) and switchable out-of-plane BPVE (light-induced polarization along the z-direction). Symmetry analysis within abstract bilayer crystal model and first-principles calculations validate these BPVE properties. It is because the positive and negative ferroelectric states caused by interlayer sliding are related by mirror symmetry which cannot flip all the BPVE tensor elements. This finding extends the understanding of the relationship between ferroelectricity and BPVE. On one hand, the switchable out-of-plane BPVE can be used to design switchable photoelectric devices. On the other hand, the in-plane BPVE is robust against the ferroelectric flipping, and the unswitchable character is beneficial to construct larger-scale photoelectric devices.
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Submitted 13 January, 2022;
originally announced January 2022.
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Crossover of Ising- to Rashba-Type Superconductivity in Epitaxial Bi2Se3/Monolayer NbSe2 Heterostructures
Authors:
Hemian Yi,
Lun-Hui Hu,
Yuanxi Wang,
Run Xiao,
Jiaqi Cai,
Danielle Reifsnyder Hickey,
Chengye Dong,
Yi-Fan Zhao,
Ling-Jie Zhou,
Ruoxi Zhang,
Anthony R. Richardella,
Nasim Alem,
Joshua A. Robinson,
Moses H. W. Chan,
Xiaodong Xu,
Nitin Samarth,
Chao-Xing Liu,
Cui-Zu Chang
Abstract:
A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it re…
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A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it remains an outstanding challenge for synthesizing atomically thin TI/superconductor heterostructures, which are critical for engineering the TSC phase. Here, we used MBE to grow Bi2Se3 films with the controlled thickness on monolayer NbSe2 and performed in-situ angle-resolved photoemission spectroscopy and ex-situ magneto-transport measurements on these Bi2Se3/monolayer NbSe2 heterostructures. We found that the emergence of Rashba-type bulk quantum well bands and spin-nondegenerate surface states coincides with a marked suppression of the in-plane upper critical magnetic field of the superconductivity in Bi2Se3/monolayer NbSe2 heterostructures. This is the signature of a crossover from Ising- to Rashba-type superconducting pairings, induced by altering Bi2Se3 film thickness. Our work opens a new route for exploring a robust TSC phase in TI/Ising superconductor heterostructures.
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Submitted 18 April, 2022; v1 submitted 29 December, 2021;
originally announced December 2021.
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Direct visualization of electronic transport in a quantum anomalous Hall insulator
Authors:
G. M. Ferguson,
Run Xiao,
Anthony R. Richardella,
David Low,
Nitin Samarth,
Katja C. Nowack
Abstract:
A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give r…
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A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give rise to the transport quantization are unknown. Here we use magnetic imaging to directly visualize the transport current in the QAH regime. As we tune through the QAH plateau by electrostatic gating, we clearly identify a regime in which the sample transports current primarily in the bulk rather than along the edges. Furthermore, we image the local response of the magnetization to electrostatic gating. Combined, these measurements suggest that incompressible regions carry the current within the QAH regime. Our observations indicate that the self-consistent electrostatics of the sample play a central role in determining the current distribution. Identifying the appropriate microscopic picture of electronic transport in QAH insulators and other topologically non-trivial states of matter is a crucial step towards realizing their potential in next-generation quantum devices.
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Submitted 24 December, 2021;
originally announced December 2021.
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Challenges to magnetic doping of thin films of the Dirac semimetal Cd$_3$As$_2$
Authors:
Run Xiao,
Jacob T Held,
Jeffrey Rable,
Supriya Ghosh,
Ke Wang,
K. Andre Mkhoyan,
Nitin Samarth
Abstract:
Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top…
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Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd3As2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd3As2, resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared to pristine Cd3As2 films grown under similar conditions. This suggests that the surfactant effect might also serve to getter impurities. We observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd3As2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.
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Submitted 22 December, 2021;
originally announced December 2021.
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ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
Authors:
Yongxi Ou,
Wilson Yanez,
Run Xiao,
Max Stanley,
Supriya Ghosh,
Boyang Zheng,
Wei Jiang,
Yu-Sheng Huang,
Timothy Pillsbury,
Anthony Richardella,
Chaoxing Liu,
Tony Low,
Vincent H. Crespi,
K. Andre Mkhoyan,
Nitin Samarth
Abstract:
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fu…
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The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.
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Submitted 16 November, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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The gauge-field extended $k\cdot p$ method and novel topological phases
Authors:
L. B. Shao,
Q. Liu,
R. Xiao,
Shengyuan A. Yang,
Y. X. Zhao
Abstract:
Although topological artificial systems, like acoustic/photonic crystals and cold atoms in optical lattices were initially motivated by simulating topological phases of electronic systems, they have their own unique features such as the spinless time-reversal symmetry and tunable $\mathbb{Z}_2$ gauge fields. Hence, it is fundamentally important to explore new topological phases based on their uniq…
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Although topological artificial systems, like acoustic/photonic crystals and cold atoms in optical lattices were initially motivated by simulating topological phases of electronic systems, they have their own unique features such as the spinless time-reversal symmetry and tunable $\mathbb{Z}_2$ gauge fields. Hence, it is fundamentally important to explore new topological phases based on their unique features. Here, we point out that the $\mathbb{Z}_2$ gauge field leads to two fundamental modifications of the conventional $k\cdot p$ method: (i) The little co-group must include the translations with nontrivial algebraic relations; (ii) The algebraic relations of the little co-group are projectively represented. These give rise to higher-dimensional irreducible representations and therefore highly degenerate Fermi points. Breaking the primitive translations can transform the Fermi points to interesting topological phases. We demonstrate our theory by two models: a rectangular $π$-flux model exhibiting graphene-like semimetal phases, and a graphite model with interlayer $π$ flux that realizes the real second-order nodal-line semimetal phase with hinge helical modes. Their physical realizations with a general bright-dark mechanism are discussed. Our finding opens a new direction to explore novel topological phases unique to artificial systems and establishes the approach to analyze these phases.
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Submitted 27 July, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Mapping the phase diagram of the quantum anomalous Hall and topological Hall effects in a dual-gated magnetic topological insulator heterostructure
Authors:
Run Xiao,
Di Xiao,
Jue Jiang,
Jae-Ho Shin,
Fei Wang,
Yi-Fan Zhao,
Ruo-Xi Zhang,
Anthony Richardella,
Ke Wang,
Morteza Kayyalha,
Moses H. W. Chan,
Chao-Xing Liu,
Cui-Zu Chang,
Nitin Samarth
Abstract:
We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valen…
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We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valence band quantum well states allows the evaluation of the variation of the Dzyaloshinskii-Moriya interaction and carrier density with gate voltages. The qualitative agreement between experiment and theory provides strong evidence for the existence of a topological Hall effect in the system studied, opening up a new route for understanding and manipulating chiral magnetic spin textures in real space.
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Submitted 11 March, 2021; v1 submitted 9 March, 2021;
originally announced March 2021.
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Spin and charge interconversion in Dirac semimetal thin films
Authors:
Wilson Yanez,
Yongxi Ou,
Run Xiao,
Jahyun Koo,
Jacob T. Held,
Supriya Ghosh,
Jeffrey Rable,
Timothy Pillsbury,
Enrique Gonzalez Delgado,
Kezhou Yang,
Juan Chamorro,
Alexander J. Grutter,
Patrick Quarterman,
Anthony Richardella,
Abhronil Sengupta,
Tyrel McQueen,
Julie A. Borchers,
K. Andre Mkhoyan,
Binghai Yan,
Nitin Samarth
Abstract:
We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric compone…
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We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pumping signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations.
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Submitted 28 February, 2021;
originally announced March 2021.
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Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface
Authors:
Yanan Li,
Ziqiao Wang,
Run Xiao,
Qi Li,
Ke Wang,
Anthony Richardella,
Jian Wang,
Nitin Samarth
Abstract:
Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeS…
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Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three capping layers that provide distinctly different charge transfer into FeSe: compound FeTe, non-metallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe-capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high temperature superconductivity in FeSe.
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Submitted 11 October, 2020;
originally announced October 2020.
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Spin photogalvanic effect in two-dimensional collinear antiferromagnets
Authors:
Rui-Chun Xiao,
Ding-Fu Shao,
Yu-Hang Li,
Hua Jiang
Abstract:
Spin photogalvanic effect (SPGE) is an efficient method to generate a spin current by photoexcitation in a contactless and ultra-fast way. In two-dimensional (2D) collinear antiferromagnetic (AFM) materials that preserve the combined time-reversal (T) and inversion (I) symmetry (i.e., TI symmetry), we find that the photogalvanic currents in two magnetic sublattices carry different kinds of spins a…
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Spin photogalvanic effect (SPGE) is an efficient method to generate a spin current by photoexcitation in a contactless and ultra-fast way. In two-dimensional (2D) collinear antiferromagnetic (AFM) materials that preserve the combined time-reversal (T) and inversion (I) symmetry (i.e., TI symmetry), we find that the photogalvanic currents in two magnetic sublattices carry different kinds of spins and propagate in opposite direction if the spin-orbit coupling is negligible, resulting in a pure spin current without net charge current. Based on the first-principles calculations, we show that two experimentally synthesized 2D collinear AFM materials, monolayer MnPS$_3$ and bilayer CrCl$_3$, host the required symmetry and support sizable SPGE. The predicted SPGE in 2D collinear AFM materials makes them promising platforms for nano spintronics devices.
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Submitted 6 September, 2020;
originally announced September 2020.
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Tuning Chern Number in Quantum Anomalous Hall Insulators
Authors:
Yi-Fan Zhao,
Ruoxi Zhang,
Ruobing Mei,
Ling-Jie Zhou,
Hemian Yi,
Ya-Qi Zhang,
Jiabin Yu,
Run Xiao,
Ke Wang,
Nitin Samarth,
Moses H. W. Chan,
Chao-Xing Liu,
Cui-Zu Chang
Abstract:
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zer…
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The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
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Submitted 21 September, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
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Electrical Detection of Ferroelectric-like Metals through Nonlinear Hall Effect
Authors:
Rui-Chun Xiao,
Ding-Fu Shao,
Wenjuan Huang,
Hua Jiang
Abstract:
Ferroelectric-like metals are a relatively rare class of materials that have ferroelectric-like distortion and metallic conductivity. LiOsO$_3$ is the first demonstrated and the most investigated ferroelectric-like metal. The presence of free carriers makes them difficult to be studied by traditional ferroelectric techniques. In this paper, using the symmetry analysis and first-principles calculat…
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Ferroelectric-like metals are a relatively rare class of materials that have ferroelectric-like distortion and metallic conductivity. LiOsO$_3$ is the first demonstrated and the most investigated ferroelectric-like metal. The presence of free carriers makes them difficult to be studied by traditional ferroelectric techniques. In this paper, using the symmetry analysis and first-principles calculations, we demonstrate that the ferroelectric-like transition of LiOsO$_3$ can be probed by a kind of electrical transport method based on nonlinear Hall effect. The Berry curvature dipole exists in the ferroelectric-like phase, and it can lead to a measurable nonlinear Hall conductance with a conventional experimental setup. However, the symmetry of the paraelectric-like phase LiOsO$_3$ vanishes the Berry curvature dipole. The Berry curvature dipole shows a strong dependence on the polar displacement, which might be helpful for the detection of polar order. The nonlinear Hall effect provides an effective method for the detection of phase transition in the study of the ferroelectric-like metals and promotes them to be applied in the ferroelectric-like electronic devices.
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Submitted 15 April, 2020;
originally announced April 2020.
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Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration
Authors:
Yasen Hou,
Rui Xiao,
Senlei Li,
Lang Wang,
Dong Yu
Abstract:
Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensat…
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Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensation6,7. Here we report a simple and effective method that can in-situ tune the chemical potential of single-crystal Bi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditional electrostatic gating. An electric field parallel to a device channel can shift the chemical potential across the Dirac point, both inside and outside the channel. We attribute this non-local reversible modulation of chemical potential to electric-field-induced charge hopping among defect states, further supported by photocurrent mapping. Our approach enables engineering chemical potential distributions in TIs and opens up tremendous opportunities for investigating fundamental transport mechanisms of charge and composite particles in these materials.
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Submitted 4 April, 2020;
originally announced April 2020.
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Soliton-induced liquid crystal enabled electrophoresis
Authors:
Bing-Xiang Li,
Rui-Lin Xiao,
Sergij V. Shiyanovskii,
Oleg D. Lavrentovich
Abstract:
Manipulation of particles by a uniform electric field, known as electrophoresis, is used in a wide array of applications. Of especial interest is electrophoresis driven by an alternating current (AC) as it eliminates electrode blocking and produces a steady motion. The known mechanisms of AC electrophoresis require that either the particle or the surrounding medium are asymmetric. This asymmetry i…
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Manipulation of particles by a uniform electric field, known as electrophoresis, is used in a wide array of applications. Of especial interest is electrophoresis driven by an alternating current (AC) as it eliminates electrode blocking and produces a steady motion. The known mechanisms of AC electrophoresis require that either the particle or the surrounding medium are asymmetric. This asymmetry is usually assured before the field is applied, as in the case of Janus spheres. We report on a new mechanism of AC electrophoresis, in which the symmetry is broken only when the field exceeds some threshold. The new mechanism is rooted in the nature of electrophoretic medium, which is an orientationally ordered nematic liquid crystal. Below the threshold, the director field of molecular orientation around a spherical particle is of a quadrupolar symmetry. Above the threshold, the director forms a polar self confined perturbation around the inclusion that oscillates with the frequency of the applied field and propels the sphere. The director perturbations are topologically trivial and represent particle like solitary waves, called "director bullets" or "directrons". The direction of electrophoretic transport can be controlled by the frequency of the field. The AC directron induced liquid crystal enabled electrophoresis can be used to transport microscopic cargo when other modes of electrophoresis such as induced charge electrophoresis are forbidden.
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Submitted 27 January, 2020;
originally announced January 2020.
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Three-dimensional solitary waves with electrically tunable direction of propagation in nematics
Authors:
Bing-Xiang Li,
Rui-Lin Xiao,
Sathyanarayana Paladugu,
Sergij V. Shiyanovskii,
Oleg D. Lavrentovich
Abstract:
Production of stable multidimensional solitary waves is a grand challenge in modern science. Steering their propagation is an even harder problem. In this work we demonstrate three-dimensional solitary waves in a nematic, trajectories of which can be steered by the electric field in a plane perpendicular to the field. The steering does not modify the properties of the ground state that remains uni…
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Production of stable multidimensional solitary waves is a grand challenge in modern science. Steering their propagation is an even harder problem. In this work we demonstrate three-dimensional solitary waves in a nematic, trajectories of which can be steered by the electric field in a plane perpendicular to the field. The steering does not modify the properties of the ground state that remains uniform. These localized waves, called director bullets, are topologically unprotected multidimensional solitons of (3+2)D type that show fore-aft and right-left asymmetry with respect to the background molecular director; the symmetry is controlled by the field. Besides bringing a fundamental novelty by adding a whole dimension to the propagation direction, the solitons can lead to applications such as targeted delivery of information and micro-cargo.
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Submitted 30 July, 2019;
originally announced July 2019.
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Microsecond electro-optic switching of nematic liquid crystals with giant dielectric anisotropy
Authors:
Bing-Xiang Li,
Greta Babakhanova,
Rui-Lin Xiao,
Volodymyr Borshch,
Simon Siemianowski,
Sergij V. Shiyanovskii,
Oleg D. Lavrentovich
Abstract:
Nematic liquid crystals exhibit a fast optical response when the applied electric field modifies the degree of order but does not change the direction of molecular orientation. The effect requires a relatively high electric field, on the order of 10^8 V/m for a field induced birefringence change of 0.01. To address this detrimental issue, this work explores electrically induced modification of the…
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Nematic liquid crystals exhibit a fast optical response when the applied electric field modifies the degree of order but does not change the direction of molecular orientation. The effect requires a relatively high electric field, on the order of 10^8 V/m for a field induced birefringence change of 0.01. To address this detrimental issue, this work explores electrically induced modification of the order parameter in a material with a giant dielectric anisotropy of +200. A relatively weak field 3X10^7 V/m causes a significant change of birefringence, by about 0.04. Both switching on and off times are ~10 microseconds. The effect is called a microsecond electrically modified order parameter (MEMOP) and can be used in electro-optical devices, such as fast electro-optic shutters, phase modulators, and beam-steerers that require microsecond response times.
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Submitted 24 July, 2019;
originally announced July 2019.
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Concurrence of Quantum Anomalous Hall and Topological Hall Effects in Magnetic Topological Insulator Sandwich Heterostructures
Authors:
Jue Jiang,
Di Xiao,
Fei Wang,
Jae-Ho Shin,
Domenico Andreoli,
Jianxiao Zhang,
Run Xiao,
Yi-Fan Zhao,
Morteza Kayyalha,
Ling Zhang,
Ke Wang,
Jiadong Zang,
Chaoxing Liu,
Nitin Samarth,
Moses H. W. Chan,
Cui-Zu Chang
Abstract:
The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other hand, the topological Hall (TH) effect, a transport hallmark of the chiral spin textures, is a consequence of real-space Berry curvature. While both the QAH and…
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The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other hand, the topological Hall (TH) effect, a transport hallmark of the chiral spin textures, is a consequence of real-space Berry curvature. While both the QAH and TH effects have been reported separately, their coexistence, a manifestation of entangled chiral edge states and chiral spin textures, has not been reported. Here, by inserting a TI layer between two magnetic TI layers to form a sandwich heterostructure, we realized a concurrence of the TH effect and the QAH effect through electric field gating. The TH effect is probed by bulk carriers, while the QAH effect is characterized by chiral edge states. The appearance of TH effect in the QAH insulating regime is the consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii-Moriya interaction and occur during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures potentially provides a unique platform for proof-of-concept dissipationless spin-textured spintronic applications.
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Submitted 31 December, 2019; v1 submitted 22 January, 2019;
originally announced January 2019.
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Emergence of excitonic superfluid at topological-insulator surfaces
Authors:
Yasen Hou,
Rui Wang,
Rui Xiao,
Luke McClintock,
Henry Clark Travaglini,
John P. Francia,
Harry Fetsch,
Onur Erten,
Sergey Y. Savrasov,
Baigeng Wang,
Antonio Rossi,
Inna Vishik,
Eli Rotenberg,
Dong Yu
Abstract:
Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature, and exciton condensates can be realized at much higher temperature than condensates of atoms because of strong Coulomb binding and small mass. Signatures of exciton condensation have been reported in double quantum wells1-4, microcavities5, graphene6, and transition met…
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Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature, and exciton condensates can be realized at much higher temperature than condensates of atoms because of strong Coulomb binding and small mass. Signatures of exciton condensation have been reported in double quantum wells1-4, microcavities5, graphene6, and transition metal dichalcogenides7. Nonetheless, transport of exciton condensates is not yet understood and it is unclear whether an exciton condensate is a superfluid8,9 or an insulating electronic crystal10,11. Topological insulators (TIs) with massless particles and unique spin textures12 have been theoretically predicted13 as a promising platform for achieving exciton condensation. Here we report experimental evidence of excitonic superfluid phase on the surface of three-dimensional (3D) TIs. We unambiguously confirmed that electrons and holes are paired into charge neutral bound states by the electric field independent photocurrent distributions. And we observed a millimetre-long transport distance of these excitons up to 40 K, which strongly suggests dissipationless propagation. The robust macroscopic quantum states achieved with simple device architecture and broadband photoexcitation at relatively high temperature are expected to find novel applications in quantum computations and spintronics.
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Submitted 24 October, 2018;
originally announced October 2018.
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Electrically driven dynamic three-dimensional solitons in nematic liquid crystals
Authors:
Bing-Xiang Li,
Volodymyr Borshch,
Rui-Lin Xiao,
Sathyanarayana Paladugu,
Taras Turiv,
Sergij V. Shiyanovskii,
Oleg D. Lavrentovich
Abstract:
Electric field induced collective reorientation of nematic molecules placed between two flat parallel electrodes is of importance for both fundamental science and practical applications. This reorientation is either homogeneous over the area of electrodes, as in liquid crystal displays, or periodically modulated, as in the phenomenon called electroconvection1, similar to Rayleigh-Bénard thermal co…
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Electric field induced collective reorientation of nematic molecules placed between two flat parallel electrodes is of importance for both fundamental science and practical applications. This reorientation is either homogeneous over the area of electrodes, as in liquid crystal displays, or periodically modulated, as in the phenomenon called electroconvection1, similar to Rayleigh-Bénard thermal convection. The question is whether the electric field can produce spatially localized propagating solitons of molecular orientation. Here we demonstrate electrically driven three-dimensional particle-like solitons representing self-trapped waves of oscillating molecular orientation. The solitons propagate with a very high speed perpendicularly to both the electric field and the initial alignment direction. The propulsion is enabled by rapid collective reorientations of the molecules with the frequency of the applied electric field and by lack of fore-aft symmetry. The solitons preserve spatially-confined shapes while moving over distances hundreds of times larger than their size and survive collisions. During collisions, the solitons show repulsions and attractions, depending on the impact parameter. The solitons are topologically equivalent to the uniform state and have no static analogs, thus exhibiting a particle-wave duality. We anticipate the observations to be a starting point for a broad range of studies since the system allows for a precise control over a broad range of parameters that determine the shape, propagation speed, and interactions of the solitons.
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Submitted 5 July, 2018;
originally announced July 2018.
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Systematic analysis for triple points in all magnetic symmorphic systems and symmetry-allowed coexistence of Dirac points and triple points
Authors:
Chi-Ho Cheung,
R. C. Xiao,
Ming-Chien Hsu,
Huei-Ru Fuh,
Yeu-Chung Lin,
Ching-Ray Chang
Abstract:
Similar to Weyl fermions, a recently discovered topological fermion "triple point" can be generated from the splitting of Dirac fermion while the system has inversion symmetry (IS) breaking or time reversal symmetry (TRS) breaking. Inducing triple points in IS breaking symmorphic systems have been well studied, whereas in TRS breaking symmorphic systems have not yet. In this work, we extend the th…
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Similar to Weyl fermions, a recently discovered topological fermion "triple point" can be generated from the splitting of Dirac fermion while the system has inversion symmetry (IS) breaking or time reversal symmetry (TRS) breaking. Inducing triple points in IS breaking symmorphic systems have been well studied, whereas in TRS breaking symmorphic systems have not yet. In this work, we extend the theory of searching triple points to all symmorphic magnetic systems. We list all $k$ paths of all symmorphic systems which allow the existence of triple points. With this systematic study, we also find out that the coexistence of Dirac points and triple points is symmetrically allowed in some particular symmetric systems. Our works will not only be helpful for searching triple points but also extend the knowledge of such a new topological fermion.
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Submitted 6 April, 2018; v1 submitted 3 April, 2018;
originally announced April 2018.
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Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials
Authors:
R. C. Xiao,
C. H. Cheung,
P. L. Gong,
W. J. Lu,
J. G. Si,
Y. P. Sun
Abstract:
$k$ paths exactly with $C_{3v}$ symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe$_2$ family materials also have the $C_{3v}…
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$k$ paths exactly with $C_{3v}$ symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe$_2$ family materials also have the $C_{3v}$ spatial symmetry. However, due to Kramers degeneracy (the systems have both inversion symmetry and time reversal symmetry), the crossing points in them are Dirac ones. In this work, based on symmetry analysis, first-principles calculations, and $k\cdot p$ method, we predict that PtSe$_2$ family materials should undergo topological transitions if the inversion symmetry is broken, \emph{i.e.} the Dirac fermions in PtSe$_2$ family materials split into TDPs in PtSeTe family materials (PtSSe, PtSeTe, and PdSeTe) with orderly arranged S/Se (Se/Te). It is different from the case in high-energy physics that breaking inversion symmetry $I$ leads to the splitting of Dirac fermion into Weyl fermions. We also address a possible method to achieve the orderly arranged in PtSeTe family materials in experiments. Our study provides a real example that Dirac points transform into TDPs, and is helpful to investigate the topological transition between Dirac fermions and TDP fermions.
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Submitted 3 March, 2018;
originally announced March 2018.
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Inducing 3-component fermions in centrosymmetric system by breaking TRS
Authors:
Chi-Ho Cheung,
R. C. Xiao,
Ming-Chien Hsu,
Huei-Ru Fuh,
Yeu-Chung Lin,
Ching-Ray Chang
Abstract:
Recent researches show that by breaking inversion symmetry Dirac fermions can split into new fermions with 3-component. In this article, we demonstrate that Dirac fermions can also split into 3-component fermions with time reversal symmetry (TRS) breaking while inversion symmetry is preserved. Firstly, we conduct a symmetry analysis with the commutation relations among all symmetry operators of a…
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Recent researches show that by breaking inversion symmetry Dirac fermions can split into new fermions with 3-component. In this article, we demonstrate that Dirac fermions can also split into 3-component fermions with time reversal symmetry (TRS) breaking while inversion symmetry is preserved. Firstly, we conduct a symmetry analysis with the commutation relations among all symmetry operators of a Dirac semimetal and find out the symmetry conditions of Dirac fermions splitting into 3-component fermions. With the symmetry conditions, we derive the $k\cdot P$ effective Hamiltonian of TRS breaking and compare it with the Hamiltonian of inversion symmetry breaking. We find that they are different in $Γ$ point eigenenergies. This can be considered as consequence of Kramers degeneracy breaking which is a clear signature of TRS breaking. Moreover, with the $k\cdot P$ effective Hamiltonian of the system we show that TRS-breaking-induced 3-component fermions can split into Weyl fermions while a small magnetic field is applied. At the end, we show our first principles calculation results are consistent with the symmetry analysis and the $k\cdot P$ predictions. Our work clarifies the similarities and the differences between TRS-breaking-induced 3-component fermions and inversion-symmetry-breaking-induced 3-component fermions and extends the scope of 3-component fermion behaviors.
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Submitted 22 September, 2017;
originally announced September 2017.
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Manipulating charge-density-wave in monolayer $1T$-TiSe$_2$ by strain and charge doping: A first-principles investigation
Authors:
M. J. Wei,
W. J. Lu,
R. C. Xiao,
H. Y. Lv,
P. Tong,
W. H. Song,
Y. P. Sun
Abstract:
We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge doping (electrons and holes) suppress the CDW instability. The tensile strain may provide a…
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We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge doping (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T$-TiSe$_2$. We also discuss the potential superconductivity in charge-doped monolayer $1T$-TiSe$_2$. Controllable electronic phase transition from CDW state to metallic state or even superconducting state can be realized in monolayer $1T$-TiSe$_2$, which makes $1T$-TiSe$_2$ possess a promising application in controllable switching electronic devices based on CDW.
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Submitted 20 June, 2017;
originally announced June 2017.
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Manipulation of type-I and type-II Dirac points in PdTe2 superconductor by external pressure
Authors:
R. C. Xiao,
P. L. Gong,
Q. S. Wu,
W. J. Lu,
M. J. Wei,
J. Y. Li,
H. Y. Lv,
X. Luo,
P. Tong,
X. B. Zhu,
Y. P. Sun
Abstract:
A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappea…
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A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappears at 6.1 GPa. Interestingly, a new pair of type-I Dirac points from the same two bands emerges at 4.7 GPa. Due to the distinctive band structures compared with those of PtSe$_2$ and PtTe$_2$, the two types of Dirac points can coexist in PdTe$_2$ under proper pressure (4.7-6.1 GPa). The emergence of type-I Dirac cones and the disappearance of type-II Dirac ones are attributed to the increase/decrease of the energy of the states at $Γ$ and $A$ point, which have the anti-bonding/bonding characters of interlayer Te-Te atoms. On the other hand, we find that the superconductivity of PdTe$_2$ slightly decreases with pressure. The pressure-induced different types of Dirac cones combined with superconductivity may open a promising way to investigate the complex interactions between Dirac fermions and superconducting quasi-particles.
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Submitted 26 July, 2017; v1 submitted 16 May, 2017;
originally announced May 2017.