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Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2
Authors:
Fan Xu,
Xumin Chang,
Jiayong Xiao,
Yixin Zhang,
Feng Liu,
Zheng Sun,
Ning Mao,
Nikolai Peshcherenko,
Jiayi Li,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Li Lu,
Jinfeng Jia,
Dong Qian,
Zhiwen Shi,
Yang Zhang,
Xiaoxue Liu,
Shengwei Jiang,
Tingxin Li
Abstract:
Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system…
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Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that reported the evidence of the integer and fractional quantum spin Hall effects in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.5, nonmonotonic temperature dependence of resistivity and large out-of-plane negative magnetoresistance have been observed, which likely arises from the frustrated liquid-like ground state and weak effective Ruderman-Kittel-Kasuya-Yosida interactions. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.
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Submitted 13 June, 2024;
originally announced June 2024.
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Optical Conductivity in Symmetric Mass Generation Insulators
Authors:
Meng Zeng,
Fu Xu,
Da-Chuan Lu,
Yi-Zhuang You
Abstract:
Symmetric mass generation (SMG) insulators are interaction-driven, featureless Mott insulating states in quantum many-body fermionic systems. Recent advancements suggest that zeros in the fermion Green's function could lead to non-vanishing negative optical conductivity in SMG insulators, even below the charge excitation gap. This study explores the origin of this unusual behavior through the lens…
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Symmetric mass generation (SMG) insulators are interaction-driven, featureless Mott insulating states in quantum many-body fermionic systems. Recent advancements suggest that zeros in the fermion Green's function could lead to non-vanishing negative optical conductivity in SMG insulators, even below the charge excitation gap. This study explores the origin of this unusual behavior through the lens of pole-zero duality, highlighting a critical issue where the current operator becomes unbounded, rendering the response function unphysical. By employing a lattice model, we derive a well-behaved lattice regularization of the current operator, enabling a detailed study of optical conductivity in SMG insulators. Utilizing both analytical and numerical methods, including strong-coupling expansions, we confirm that SMG insulators exhibit no optical conductivity at low energies below the charge gap, effectively resolving the paradox. This work not only deepens our understanding of quantum many-body phenomena but also lays a robust theoretical groundwork for future experimental explorations of SMG materials.
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Submitted 8 May, 2024;
originally announced May 2024.
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Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene
Authors:
Chushan Li,
Fan Xu,
Bohao Li,
Jiayi Li,
Guoan Li,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Jie Shen,
Li Lu,
Jinfeng Jia,
Fengcheng Wu,
Xiaoxue Liu,
Tingxin Li
Abstract:
Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Be…
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Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Bernal bilayer graphene (BBG). Recently, enhanced superconductivity has been demonstrated in BBG due to the proximity with a monolayer WSe2. Here, we report the observation of superconductivity and a series of flavor-symmetry-breaking phases in both electron- and hole-doped BBG/WSe2 device by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless (BKT) transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when applied electric fields drive BBG electron or hole wavefunctions toward the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. We find the hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. In contrast, the electron-doped superconductivity obeys the Pauli limit, even though the proximity induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of novel superconductor devices based on BBG.
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Submitted 7 May, 2024;
originally announced May 2024.
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Switching intrinsic magnetic skyrmions with controllable magnetic anisotropy in van der Waals multiferroic heterostructures
Authors:
Ze-quan Wang,
Feng Xue,
Liang Qiu,
Zhe Wang,
Ruqian Wu,
Yusheng Hou
Abstract:
Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic…
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Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/In2Te3 by reversing the ferroelectric polarization of In2Te3. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of In2Te3. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters, and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for future development of spintronics.
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Submitted 8 March, 2024;
originally announced March 2024.
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Quantum transport properties of the topological Dirac Semimetal $α$-Sn
Authors:
Md Shahin Alam,
Alexandr Kazakov,
Mujeeb Ahmad,
Rajibul Islam,
Fei Xue,
Marcin Matusiak
Abstract:
We report measurements of the electrical resistivity ($ρ$) and thermoelectric power (S) in a thin film of strained single-crystalline $α$-Sn grown by molecular beam epitaxy on an insulating substrate. The temperature (T) dependence of the resistivity of $α$-Sn can be divided into two regions:below T* $\approx$ 135 K $ρ$(T) shows a metallic-like behaviour, while above this temperature an increasing…
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We report measurements of the electrical resistivity ($ρ$) and thermoelectric power (S) in a thin film of strained single-crystalline $α$-Sn grown by molecular beam epitaxy on an insulating substrate. The temperature (T) dependence of the resistivity of $α$-Sn can be divided into two regions:below T* $\approx$ 135 K $ρ$(T) shows a metallic-like behaviour, while above this temperature an increasing contribution from thermally excited holes to electrical transport is observed. However, it is still dominated by highly mobile electrons, resulting in a negative sign of the Seebeck coefficient above T = 47 K. In the presence of the magnetic field (B) applied along an electric field or thermal gradient, we note a negative magnetoresistance or a negative slope of S(B), respectively. The theoretical prediction for the former (calculated using density functional theory) agrees well with the experiment. However, these characteristics quickly disappear when the magnetic field is deviated from an orientation parallel to the electrical field or the thermal gradient. We indicate that the behaviour of the electrical resistivity and thermoelectric power can be explained in terms of the chiral current arising from the topologically non-trivial electronic structure of $α$-Sn. Its decay at high temperature is a consequence of the decreasing ratio between the intervalley Weyl relaxation time to the Drude scattering time.
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Submitted 31 May, 2024; v1 submitted 29 February, 2024;
originally announced March 2024.
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Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures
Authors:
Feng Xue,
Jiaheng Li,
Yizhou Liu,
Ruqian Wu,
Yong Xu,
Wenhui Duan
Abstract:
Topological and valleytronic materials are promising for spintronic and quantum applications due to their unique properties. Using first principles calculations, we demonstrate that germanene (Ge)-based ferromagnetic heterostructures can exhibit multiple quantum states such as quantum anomalous Hall effect (QAHE) with Chern numbers of C=-1 or C=-2, quantum valley Hall effect (QVHE) with a valley C…
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Topological and valleytronic materials are promising for spintronic and quantum applications due to their unique properties. Using first principles calculations, we demonstrate that germanene (Ge)-based ferromagnetic heterostructures can exhibit multiple quantum states such as quantum anomalous Hall effect (QAHE) with Chern numbers of C=-1 or C=-2, quantum valley Hall effect (QVHE) with a valley Chern number of C$v$=2, valley-polarized quantum anomalous Hall effect (VP-QAHE) with two Chern numbers of C=-1 and C$v$=-1 as well as time-reversal symmetry broken quantum spin Hall effect (T-broken QSHE) with a spin Chern number of C$s$~1. Furthermore, we find that the transitions between different quantum states can occur by changing the magnetic orientation of ferromagnetic layers through applying a magnetic field. Our discovery provides new routes and novel material platforms with a unique combination of diverse properties that make it well suitable for applications in electronics, spintronics and valley electronics.
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Submitted 8 February, 2024;
originally announced February 2024.
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Dissipationless gyrotropic magnetic Hall effect
Authors:
Longjun Xiang,
Jinxiong Jia,
Fuming Xu,
Zhenhua Qiao,
Jian Wang
Abstract:
A dissipationless longitudinal current can be generated by a pure magnetic field through the chiral magnetic effect. Herein, we propose that a pure oscillating magnetic field through Zeeman coupling can further drive an AC magnetic Hall current in two-dimensional systems without inversion symmetry. We dub this effect the "gyrotropic magnetic Hall effect" (GMHE), in analogy with the gyrotropic curr…
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A dissipationless longitudinal current can be generated by a pure magnetic field through the chiral magnetic effect. Herein, we propose that a pure oscillating magnetic field through Zeeman coupling can further drive an AC magnetic Hall current in two-dimensional systems without inversion symmetry. We dub this effect the "gyrotropic magnetic Hall effect" (GMHE), in analogy with the gyrotropic current achieved by rectifying the optical fields. Importantly, we find that the GMHE conductivity is a reactive or dissipationless transport coefficient, which is even under time-reversal symmetry. We reveal the "Zeeman Berry curvature" as the quantum origin of the GMHE, whose integral over all states below the Fermi energy gives the GMHE conductivity. Furthermore, by symmetry analysis, we show that the GMHE can appear in a wide range of two-dimensional materials. To demonstrate our proposal, we evaluate the GMHE current in two-dimensional Rashba system and in the surface of topological insulator, where a low-frequency magnetic field with a small amplitude can be converted into a detectable Hall voltage.
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Submitted 7 December, 2023;
originally announced December 2023.
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Raman fingerprints of spin-phonon coupling and magnetic transition in an organic molecule intercalated Cr2Ge2Te6
Authors:
Sudeshna Samanta,
Hector Iturriaga,
Thuc T. Mai,
Adam J. Biacchi,
Rajbul Islam,
Angela R. Hight Walker,
Mohamed Fathi Sanad,
Charudatta Phatak,
Ryan Siebenaller,
Emmanuel Rowe Michael A. Susner,
Fei Xue,
Srinivasa R. Singamaneni
Abstract:
The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evide…
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The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evidence to reveal the intercalation effect on intrinsic magnetic and electronic transitions in quasi-two-dimensional Cr2Ge2Te6 using tetrabutyl ammonium as the intercalant. The temperature-evolution of Raman modes E_g^3 and A_g^1, along with the magnetization measurements, unambiguously captures the enhancement of the ferromagnetic Curie temperature in the intercalated heterostructure. Moreover, the E_g^4 mode highlighted the increased effect of spin-phonon interaction in magnetic order-induced lattice distortion. Combined with the first-principle calculations, we observed a substantial number of electrons transferred from TBA+ to Cr through the interface. These results provide the interplay between spin-phonon coupling and magnetic ordering in van der Waals magnets where Raman fingerprints would be highly beneficial for further understanding the manipulation of magnetism in layered heterostructures.
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Submitted 2 December, 2023;
originally announced December 2023.
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Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping
Authors:
Shuang Pan,
Yuqing Bai,
Jiaxuan Tang,
Peihao Wang,
Yurong You,
Guizhou Xu,
Feng Xu
Abstract:
CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation…
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CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation density that facilitates movement of the domain walls. In addition, the introduction of the doping element Mn allows higher saturation magnetization intensity. Cr0.5V0.5I3 exhibits substantially increased coercivity force and larger magnetocrystalline anisotropy compared to CrI3, while kept similar Curie temperature and good environmental stability. The first principles calculations suggest direct and narrowed band gaps in Cr0.5V0.5I3 and VI3 comparing to CrI3. The smaller band gaps and good hard magnetic property make Cr0.5V0.5I3 an alternative choice to future research of spintronic devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals
Authors:
Yuqing Bai,
Shuang Pan,
Ziqian Lu,
Yuanyuan Gong,
Guizhou Xu,
Feng Xu
Abstract:
CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of…
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CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10K, 9T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them.
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Submitted 30 November, 2023;
originally announced November 2023.
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Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys
Authors:
Cheng Zhang,
Shuang Pan,
Peihao Wang,
Yuchen Men,
Xiang Li,
Yuqing Bai,
Li Tang,
Feng Xu,
Guizhou Xu
Abstract:
Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature inte…
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Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature interval, accompanying with growing contribution from the ordinary Hall effect. As a result, comparatively low carrier density (1020 cm-3) and high carrier mobility (150 cm2/Vs) are obtained in Mn2CoGa (or x=0.25) alloy in the temperature range of 10-200K. These also lead to a large dip in the related magnetoresistance at low fields. While in high Al content, despite the magnetization behavior is not altered significantly, the Hall resistivity is instead dominated by the anomalous one, just analogous to that widely reported in Mn2CoAl. The distinct electrical transport behavior of x=0 and x=0.75 (or 1) is presently understood by their possible different scattering mechanism of the anomalous Hall effect due to the differences in atomic order and conductivity. Our work can expand the existing understanding of the SGS properties and offer a better SGS candidate with higher carrier mobility that can facilitate the application in the spin-injected related devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Unexpected Field Evaporation Sequence in $γ$-TiAl
Authors:
Jiayuwen Qi,
Fei Xue,
Emmanuelle Marquis,
Wolfgang Windl
Abstract:
In atom probe tomography (APT), atoms from the surface of a needle shape specimen are evaporated under a high electric field and analyzed via time of flight mass spectrometry and position sensitive detection. 3D reconstruction of the atom positions follows a simple projection law, which can sometimes lead to artifacts due to deviation from an assumed ideal evaporation sequence. Here, we revisit th…
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In atom probe tomography (APT), atoms from the surface of a needle shape specimen are evaporated under a high electric field and analyzed via time of flight mass spectrometry and position sensitive detection. 3D reconstruction of the atom positions follows a simple projection law, which can sometimes lead to artifacts due to deviation from an assumed ideal evaporation sequence. Here, we revisit the evaporation behavior of [001]-oriented $γ$-TiAl using a full-dynamics simulation approach empowered by molecular dynamics. Without any knowledge of charge states or assumptions about evaporation fields, we successfully reproduced the lack of distinct Al and Ti layers observed in reconstructions of experimental data which is traditionally attributed to the retention of Al on the evaporating surface. We further showed that a step-wise bond breaking process of Ti in contrast to the simultaneous bond breaking of Al explains the seemingly counterintuitive preferential evaporation of the strongly bonded Ti atoms.
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Submitted 26 November, 2023;
originally announced November 2023.
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Classification of spin Hall effect in two-dimensional systems
Authors:
Longjun Xiang,
Fuming Xu,
Luyang Wang,
Jian Wang
Abstract:
Physical properties such as the conductivity are usually classified according to the symmetry of the underlying system using Neumann's principle, which gives an upper bound for the number of independent components of the corresponding property tensor. However, for a given Hamiltonian, this global approach usually can not give a definite answer on whether a physical effect such as spin Hall effect…
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Physical properties such as the conductivity are usually classified according to the symmetry of the underlying system using Neumann's principle, which gives an upper bound for the number of independent components of the corresponding property tensor. However, for a given Hamiltonian, this global approach usually can not give a definite answer on whether a physical effect such as spin Hall effect (SHE) exists or not. It is found that the parity and types of spin-orbit interactions (SOIs) are good indicators that can further reduce the number of independent components of the spin Hall conductivity for a specific system. In terms of the parity as well as various Rashba-like and Dresselhaus-like SOIs, we propose a local approach to classify SHE in two-dimensional (2D) two-band models, where sufficient conditions for identifying the existence or absence of SHE in all 2D magnetic point groups are presented.
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Submitted 11 November, 2023;
originally announced November 2023.
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Quantum nonlinear ac transport theory at low frequency
Authors:
Lei Zhang,
Fuming Xu,
Jian Chen,
Yanxia Xing,
Jian Wan
Abstract:
Based on the nonequilibrium Green's function (NEGF), we develop a quantum nonlinear theory to study time-dependent ac transport properties in the low frequency and nonlinear bias voltage regimes. By expanding NEGF in terms of time to the linear order in Wigner representation, we can explicitly include the time-dependent self-consistent Coulomb interaction induced by external ac bias. Hence this th…
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Based on the nonequilibrium Green's function (NEGF), we develop a quantum nonlinear theory to study time-dependent ac transport properties in the low frequency and nonlinear bias voltage regimes. By expanding NEGF in terms of time to the linear order in Wigner representation, we can explicitly include the time-dependent self-consistent Coulomb interaction induced by external ac bias. Hence this theory automatically satisfies two basic requirements, i.e., current conservation and gauge invariance. Within this theory, the nonlinear ac current can be evaluated at arbitrarily large bias voltages under the low frequency limit. In addition, we obtain the expression of time-dependent current under the wide band limit and derive the relation between the nonlinear electrochemical capacitance and the bias voltage, which are very useful in predicting the dynamical properties of nanoelectronic devices. This quantum theory can be directly combined with density functional theory to investigate time-dependent ac transport from first-principles calculation.
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Submitted 5 November, 2023;
originally announced November 2023.
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Bulk-boundary-transport correspondence of the second-order topological insulators
Authors:
Yuxiong Long^§,
Miaomiao Wei^§,
Fuming Xu,
Jian Wang
Abstract:
The bulk-boundary correspondence of the second-order topological insulator (SOTI) has been well established, but a universal transport signature for open systems is still absent. For a variety of SOTIs induced by applying in-plane magnetic fields in Z$_2$-invariant first-order TIs, rotating this magnetic field features the spin pump mechanism while maintaining the SOTI phase. We demonstrate that,…
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The bulk-boundary correspondence of the second-order topological insulator (SOTI) has been well established, but a universal transport signature for open systems is still absent. For a variety of SOTIs induced by applying in-plane magnetic fields in Z$_2$-invariant first-order TIs, rotating this magnetic field features the spin pump mechanism while maintaining the SOTI phase. We demonstrate that, this spin pump can generate quantized pure spin current when tuning the magnetic field strength, which corresponds to the formation of topological corner states characterizing SOTI in two-dimensional (2D) systems. Quantized spin pump is discovered in various 2D and 3D SOTI models evolved from Z$_2$-invariant TIs, which is robust against disorder and universally independent of system parameters including Fermi energy, system size, magnetic field strength, and pumping frequency. These findings suggest that this universal quantized spin pump can characterize the bulk-boundary-transport correspondence of SOTIs. Quantized spin pump can also be realized by combining pseudo spin such as the orbital degree of freedom with the rotating magnetic field, which could be achieved in higher-order photonic or acoustic topological systems. Such a quantized spin pump is promising as an accurate and stable single-spin source.
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Submitted 5 November, 2023;
originally announced November 2023.
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Unified framework of the microscopic Landau-Lifshitz-Gilbert equation and its application to Skyrmion dynamics
Authors:
Fuming Xu,
Gaoyang Li,
Jian Chen,
Zhizhou Yu,
Lei Zhang,
Baigeng Wang,
Jian Wang
Abstract:
The Landau-Lifshitz-Gilbert (LLG) equation is widely used to describe magnetization dynamics. We develop a unified framework of the microscopic LLG equation based on the nonequilibrium Green's function formalism. We present a unified treatment for expressing the microscopic LLG equation in several limiting cases, including the adiabatic, inertial, and nonadiabatic limits with respect to the preces…
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The Landau-Lifshitz-Gilbert (LLG) equation is widely used to describe magnetization dynamics. We develop a unified framework of the microscopic LLG equation based on the nonequilibrium Green's function formalism. We present a unified treatment for expressing the microscopic LLG equation in several limiting cases, including the adiabatic, inertial, and nonadiabatic limits with respect to the precession frequency for a magnetization with fixed magnitude, as well as the spatial adiabatic limit for the magnetization with slow variation in both its magnitude and direction. The coefficients of those terms in the microscopic LLG equation are explicitly expressed in terms of nonequilibrium Green's functions. As a concrete example, this microscopic theory is applied to simulate the dynamics of a magnetic Skyrmion driven by quantum parametric pumping. Our work provides a practical formalism of the microscopic LLG equation for exploring magnetization dynamics.
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Submitted 12 October, 2023;
originally announced October 2023.
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Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages
Authors:
Xin He,
Yinchang Ma,
Chenhui Zhang,
Aiping Fu,
Weijin Hu,
Yang Xu,
Bin Yu,
Kai Liu,
Hua Wang,
Xixiang Zhang,
Fei Xue
Abstract:
The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demon…
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The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demonstrate their reversible transitions in van der Waals ferroelectric α-In2Se3 transistors. By varying the gate bias, protons can be incrementally injected or extracted, achieving controllable tuning of the ferroelectric α-In2Se3 protonic dynamics across the channel and obtaining numerous intermediate phases. Combining piezoelectric force microscopy and electrical hysteresis measurements, we surprisingly discover that the gate tuning of α-In2Se3 protonation is volatile, unlike the conventional gating effect, and the created new phases remain polar. Their origin, revealed by first-principles calculations, is related to the formation of metastable hydrogen-stabilized α-In2Se3 phases with switchable dipoles. Furthermore, our approach enables ultralow gate-voltage switching of different phases (below 0.4 V), and easy integration with transistor components. This work provides fundamental insights into the interactions between protons and ferroelectric phase transitions, providing a possible avenue for accessing hidden phases in ferroelectric switching and for developing energy-efficient, multilevel-switching memory devices.
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Submitted 12 October, 2023;
originally announced October 2023.
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High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus
Authors:
Xueying Zuo,
Jingjing Cheng,
Yulin Liang,
Fuming Xu,
Yanxia Xing
Abstract:
We numerically investigate the high-efficiency photovoltaic effect in lateral p-n homojunction based on monolayer black phosphorus (MBP) by using the non-equilibrium Green's function combined with the density functional theory. Due to the built-in electric field of the p-n junction and the wrinkle structure of MBP, the photocurrent excited by either linearly or elliptically polarized light is sign…
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We numerically investigate the high-efficiency photovoltaic effect in lateral p-n homojunction based on monolayer black phosphorus (MBP) by using the non-equilibrium Green's function combined with the density functional theory. Due to the built-in electric field of the p-n junction and the wrinkle structure of MBP, the photocurrent excited by either linearly or elliptically polarized light is significantly enhanced in a wide photon energy range. Moreover, because of the electron-photon interaction, the photocurrent is related to atomic orbitals through the polarizing angle of polarized light. Therefore, we can read the orbital information of the band structure from the polarizing angular distribution of photocurrent. These findings suggest the promising application of MBP-based p-n homojunction in high-efficiency photoelectric devices and orbital-resolved photovoltaic detection.
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Submitted 12 August, 2023;
originally announced August 2023.
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Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
Authors:
Fan Xu,
Zheng Sun,
Tongtong Jia,
Chang Liu,
Cheng Xu,
Chushan Li,
Yu Gu,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Jinfeng Jia,
Zhiwen Shi,
Shengwei Jiang,
Yang Zhang,
Xiaoxue Liu,
Tingxin Li
Abstract:
The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effect, where exotic electron fluids with fractionally charged excitations form in partially filled Landau levels. The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs o…
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The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effect, where exotic electron fluids with fractionally charged excitations form in partially filled Landau levels. The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall states without the need for an external magnetic field. These states are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) states. Here, we present direct transport evidence of the existence of both IQAH and FQAH states in twisted bilayer MoTe2 (AA stacked). At zero magnetic field, we observe well-quantized Hall resistance of h/e2 around moiré filling factor ν = -1 (corresponding to one hole per moiré unit cell), and nearly-quantized Hall resistance of 3h/2e2 around ν = -2/3, respectively. Concomitantly, the longitudinal resistance exhibits distinct minima around ν = -1 and -2/3. The application of an electric field induces topological quantum phase transition from the IQAH state to a charge transfer insulator at ν = -1, and from the FQAH state to a generalized Wigner crystal state, further transitioning to a metallic state at ν = -2/3. Our study paves the way for the investigation of fractionally charged excitations and anyonic statistics at zero magnetic field based on semiconductor moiré materials.
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Submitted 8 September, 2023; v1 submitted 11 August, 2023;
originally announced August 2023.
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Gapless superconducting state and mirage gap in altermagnets
Authors:
Miaomiao Wei,
Longjun Xiang,
Fuming Xu,
Lei Zhang,
Gaomin Tang,
Jian Wang
Abstract:
The interplay between spin-orbit interaction (SOI) and magnetism produces interesting phenomena in superconductors. When a two-dimensional (2D) system with strong SOI is coupled to an $s$-wave superconductor, an in-plane magnetic field can drive the system into a gapless superconducting state and induce a mirage gap at finite energies for an Ising superconductor. In this work, we demonstrate that…
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The interplay between spin-orbit interaction (SOI) and magnetism produces interesting phenomena in superconductors. When a two-dimensional (2D) system with strong SOI is coupled to an $s$-wave superconductor, an in-plane magnetic field can drive the system into a gapless superconducting state and induce a mirage gap at finite energies for an Ising superconductor. In this work, we demonstrate that when an $s$-wave superconductor is proximitized to an altermagnet, the intrinsic anisotropic spin splitting of the altermagnet can result in a gapless superconducting state and a pair of mirage gaps at finite energy. The gapless superconductivity exhibits spin-polarized segmented Fermi surfaces, with coexisting spin-singlet and spin-triplet pairings that have a $d$-wave character. Importantly, the gapless superconducting and mirage gap features are quantified through quantum transport. Our results suggest that altermagnet is an ideal platform for studying gapless superconducting states and mirage gap physics.
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Submitted 14 May, 2024; v1 submitted 31 July, 2023;
originally announced August 2023.
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Angular dependence of spin-orbit torque in monolayer $Fe_3GeTe_2$
Authors:
Fei Xue,
Mark D. Stiles,
Paul M. Haney
Abstract:
In ferromagnetic systems lacking inversion symmetry, an applied electric field can control the ferromagnetic order parameters through the spin-orbit torque. The prototypical example is a bilayer heterostructure composed of a ferromagnet and a heavy metal that acts as a spin current source. In addition to such bilayers, spin-orbit coupling can mediate spin-orbit torques in ferromagnets that lack bu…
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In ferromagnetic systems lacking inversion symmetry, an applied electric field can control the ferromagnetic order parameters through the spin-orbit torque. The prototypical example is a bilayer heterostructure composed of a ferromagnet and a heavy metal that acts as a spin current source. In addition to such bilayers, spin-orbit coupling can mediate spin-orbit torques in ferromagnets that lack bulk inversion symmetry. A recently discovered example is the two-dimensional monolayer ferromagnet $Fe_3GeTe_2$. In this work, we use first-principles calculations to study the spin-orbit torque and ensuing magnetic dynamics in this material. By expanding the torque versus magnetization direction as a series of vector spherical harmonics, we find that higher order terms (up to $\ell=4$) are significant and play important roles in the magnetic dynamics. They give rise to deterministic, magnetic field-free electrical switching of perpendicular magnetization.
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Submitted 18 October, 2023; v1 submitted 10 July, 2023;
originally announced July 2023.
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Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator
Authors:
Lixuan Tai,
Haoran He,
Su Kong Chong,
Huairuo Zhang,
Hanshen Huang,
Gang Qiu,
Yaochen Li,
Hung-Yu Yang,
Ting-Hsun Yang,
Xiang Dong,
Yuxing Ren,
Bingqian Dai,
Tao Qu,
Qingyuan Shu,
Quanjun Pan,
Peng Zhang,
Fei Xue,
Jie Li,
Albert V. Davydov,
Kang L. Wang
Abstract:
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic fie…
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Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $kΩ$ is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3 nm^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.
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Submitted 12 May, 2024; v1 submitted 8 June, 2023;
originally announced June 2023.
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Advanced Analytics on 3D X-ray Tomography of Irradiated Silicon Carbide Claddings
Authors:
Fei Xu,
Joshua J. Kane,
Peng Xu,
Jason L. Schulthess,
Sean Gonderman,
Nikolaus L. Cordesa
Abstract:
Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of non-destructive evaluation techniques to assess critical defects is needed. Three-dimensional (3D) X-ray imaging, also referred to as X-ray computed tomography…
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Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of non-destructive evaluation techniques to assess critical defects is needed. Three-dimensional (3D) X-ray imaging, also referred to as X-ray computed tomography (CT), is a non-destructive, data-rich characterization technique that can provide surface and subsurface spatial information. This paper discusses the design and implementation of a fully automatic workflow to detect and analyze SiC-SiC defects using image processing techniques on 3D X-ray images. The workflow consists of four processing blocks, including data preparation, void/crack detection, visualization, and analysis. In this work, three SiC samples (two irradiated and one unirradiated) provided by General Atomics are investigated. The irradiated samples were exposed in a way that was expected to induce cracking, and indeed, the automated workflow developed in this work was able to successfully identify and characterize the crack formation in the irradiated samples while detecting no observed cracking in the unirradiated sample. These results demonstrate the value of automated XCT tools to better understand the damage and damage propagation in SiC-SiC structures for nuclear applications.
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Submitted 5 March, 2023;
originally announced March 2023.
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Molecular dynamics simulation of the transformation of Fe-Co alloy by machine learning force field based on atomic cluster expansion
Authors:
Yongle Li,
Feng Xu,
Long Hou,
Luchao Sun,
Haijun Su,
Xi Li,
Wei Ren
Abstract:
The force field describing the calculated interaction between atoms or molecules is the key to the accuracy of many molecular dynamics (MD) simulation results. Compared with traditional or semi-empirical force fields, machine learning force fields have the advantages of faster speed and higher precision. We have employed the method of atomic cluster expansion (ACE) combined with first-principles d…
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The force field describing the calculated interaction between atoms or molecules is the key to the accuracy of many molecular dynamics (MD) simulation results. Compared with traditional or semi-empirical force fields, machine learning force fields have the advantages of faster speed and higher precision. We have employed the method of atomic cluster expansion (ACE) combined with first-principles density functional theory (DFT) calculations for machine learning, and successfully obtained the force field of the binary Fe-Co alloy. Molecular dynamics simulations of Fe-Co alloy carried out using this ACE force field predicted the correct phase transition range of Fe-Co alloy.
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Submitted 1 March, 2023;
originally announced March 2023.
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An Efficient Instance Segmentation Approach for Extracting Fission Gas Bubbles on U-10Zr Annular Fuel
Authors:
Shoukun Sun,
Fei Xu,
Lu Cai,
Daniele Salvato,
Fidelma Dilemma,
Luca Capriotti,
Min Xian,
Tiankai Yao
Abstract:
U-10Zr-based nuclear fuel is pursued as a primary candidate for next-generation sodium-cooled fast reactors. However, more advanced characterization and analysis are needed to form a fundamental understating of the fuel performance, and make U-10Zr fuel qualify for commercial use. The movement of lanthanides across the fuel section from the hot fuel center to the cool cladding surface is one of th…
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U-10Zr-based nuclear fuel is pursued as a primary candidate for next-generation sodium-cooled fast reactors. However, more advanced characterization and analysis are needed to form a fundamental understating of the fuel performance, and make U-10Zr fuel qualify for commercial use. The movement of lanthanides across the fuel section from the hot fuel center to the cool cladding surface is one of the key factors to affect fuel performance. In the advanced annular U-10Zr fuel, the lanthanides present as fission gas bubbles. Due to a lack of annotated data, existing literature utilized a multiple-threshold method to separate the bubbles and calculate bubble statistics on an annular fuel. However, the multiple-threshold method cannot achieve robust performance on images with different qualities and contrasts, and cannot distinguish different bubbles. This paper proposes a hybrid framework for efficient bubble segmentation. We develop a bubble annotation tool and generate the first fission gas bubble dataset with more than 3000 bubbles from 24 images. A multi-task deep learning network integrating U-Net and ResNet is designed to accomplish instance-level bubble segmentation. Combining the segmentation results and image processing step achieves the best recall ratio of more than 90% with very limited annotated data. Our model shows outstanding improvement by comparing the previously proposed thresholding method. The proposed method has promising to generate a more accurate quantitative analysis of fission gas bubbles on U-10Zr annular fuels. The results will contribute to identifying the bubbles with lanthanides and finally build the relationship between the thermal gradation and lanthanides movements of U-10Zr annular fuels. Mover, the deep learning model is applicable to other similar material micro-structure segmentation tasks.
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Submitted 8 February, 2023;
originally announced February 2023.
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Ground state properties of a multi-component bosonic mixture: a Gutzwiller mean-field study
Authors:
Chenrong Liu,
Po Chen,
Linli He,
Fangfang Xu
Abstract:
Using the single-site Gutzwiller method, we theoretically study the ground state and the interspecies entanglement properties of interexchange symmetric multi-component (two- and three-) bosonic mixtures in an optical lattice, and the results are generalized to an $n$-component ($n=2,3,4,\cdots$) system. We compute the mean-field phase diagram, the interspecies entanglement entropy, and the ground…
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Using the single-site Gutzwiller method, we theoretically study the ground state and the interspecies entanglement properties of interexchange symmetric multi-component (two- and three-) bosonic mixtures in an optical lattice, and the results are generalized to an $n$-component ($n=2,3,4,\cdots$) system. We compute the mean-field phase diagram, the interspecies entanglement entropy, and the ground state spectral decomposition. Three phases namely the $n$-component Superfluid state (nSF), the $n$-component Mott insulator state (nMI), and the Super-counter-fluid state (SCF) are observed. Interestingly, we find that there are $n-1$ SCF lobes to separate every two neighboring nMI lobes in the phase diagram. More importantly, we derive the exact general expression of the interspecies entanglement entropy for the SCF phase. In addition, we also investigate the demixing effect of an n-component mixture and demonstrate that the mixing-demixing critical point is independent of n.
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Submitted 2 June, 2023; v1 submitted 16 February, 2023;
originally announced February 2023.
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Realization of valley-spin polarized current via parametric pump in monolayer $\rm MoS_2$
Authors:
Kai-Tong Wang,
Hui Wang,
Fuming Xu,
Yunjin Yu,
Yadong Wei
Abstract:
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange field to break the energy degeneracy of monolayer $MoS_2$, the top of its valence bands is valley-spin polarized and tunable by the exchange field. A device with s…
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Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange field to break the energy degeneracy of monolayer $MoS_2$, the top of its valence bands is valley-spin polarized and tunable by the exchange field. A device with spin-up polarized left lead, spin-down polarized right lead, and untuned central region is constructed through applying different exchange fields in the corresponding regions. Then, equal amount of pumped currents with opposite valley-spin polarization are simultaneously generated in the left and right leads when periodically varying two pumping potentials. Numerical results show that the phase difference between the pumping potentials can change the direction and hence polarization of the pumped currents. It is found that the pumped current exhibits resonant behavior in the valley-spin locked energy window, which depends strongly on the system size and is enhanced to resonant current peaks at certain system lengths. More importantly, the pumped current periodically oscillates as a function of the system length, which is closely related to the oscillation of transmission. The effects of other system parameters, such as the pumping amplitude and the static potential, are also thoroughly discussed.
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Submitted 27 January, 2023;
originally announced January 2023.
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Quantum Fluctuation of the Quantum Geometric Tensor and its Manifestation as Intrinsic Hall Signatures in Time-Reversal Invariant Systems
Authors:
Miaomiao Wei,
Luyang Wang,
Bin Wang,
Longjun Xiang,
Fuming Xu,
Baigeng Wang,
Jian Wang
Abstract:
In time-reversal invariant systems, all charge Hall effects predicted so far are extrinsic effects due to the dependence on the relaxation time. We explore intrinsic Hall signatures by studying quantum noise spectrum of the Hall current in time-reversal invariant systems, and discover intrinsic thermal Hall noises in both linear and nonlinear regimes. As the band geometric characteristics, quantum…
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In time-reversal invariant systems, all charge Hall effects predicted so far are extrinsic effects due to the dependence on the relaxation time. We explore intrinsic Hall signatures by studying quantum noise spectrum of the Hall current in time-reversal invariant systems, and discover intrinsic thermal Hall noises in both linear and nonlinear regimes. As the band geometric characteristics, quantum geometric tensor and Berry curvature play critical roles in various Hall effects, so are their quantum fluctuations. It is found that the thermal Hall noise in linear order of the electric field is purely intrinsic, and the second-order thermal Hall noise has both intrinsic and extrinsic contributions. In particular, the intrinsic part of the second-order thermal Hall noise is a manifestation of the quantum fluctuation of quantum geometric tensor, which widely exists as long as Berry curvature is nonzero. These intrinsic thermal Hall noises provide direct measurable means to band geometric information, including Berry curvature related quantities and quantum fluctuation of quantum geometric tensor.
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Submitted 27 January, 2023;
originally announced January 2023.
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Tunable Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures
Authors:
Feng Xue,
Yusheng Hou,
Zhe Wang,
Zhiming Xu,
Ke He,
Ruqian Wu,
Yong Xu,
Wenhui Duan
Abstract:
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced…
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The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between different phases of QAHE can be controllable by multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
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Submitted 27 December, 2022; v1 submitted 25 December, 2022;
originally announced December 2022.
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Intrinsic and tunable quantum anomalous Hall effect and magnetic topological phases in XYBi2Te5
Authors:
Xin-Yi Tang,
Zhe Li,
Feng Xue,
Pengfei Ji,
Zetao Zhang,
Xiao Feng,
Yong Xu,
Quansheng Wu,
Ke He
Abstract:
By first-principles calculations, we study the magnetic and topological properties of XYBi2Te5-family (X, Y = Mn, Ni, V, Eu) compounds. The strongly coupled double magnetic atom-layers can significantly enhance the magnetic ordering temperature while keeping the topologically nontrivial properties. Particularly, NiVBi2Te5 is found to be a magnetic Weyl semimetal in bulk and a Chern insulator in th…
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By first-principles calculations, we study the magnetic and topological properties of XYBi2Te5-family (X, Y = Mn, Ni, V, Eu) compounds. The strongly coupled double magnetic atom-layers can significantly enhance the magnetic ordering temperature while keeping the topologically nontrivial properties. Particularly, NiVBi2Te5 is found to be a magnetic Weyl semimetal in bulk and a Chern insulator in thin film with both the Curie temperature (~150 K) and full gap well above 77 K. Ni2Bi2Te5, MnNiBi2Te5, NiVBi2Te5 and NiEuBi2Te5 exhibits intrinsic dynamic axion state. Among them, MnNiBi2Te5 has a Neel temperature over 200 K and Ni2Bi2Te5 even demonstrates antiferromagnetic order above room temperature. These results indicate an approach to realize high temperature quantum anomalous Hall effect and other topological quantum effects for practical applications.
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Submitted 5 July, 2023; v1 submitted 15 November, 2022;
originally announced November 2022.
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Advanced Characterization-Informed Framework and Quantitative Insight to Irradiated Annular U-10Zr Metallic Fuels
Authors:
Fei Xu,
Lu Cai,
Daniele Salvato,
Fidelma Dilemma,
Luca Capriotti,
Tiankai Yao
Abstract:
U-10Zr-based metallic nuclear fuel is a promising fuel candidate for next-generation sodium-cooled fast reactors.The research experience of the Idaho National Laboratory for this type of fuel dates back to the 1960s. Idaho National Laboratory researchers have accumulated a considerable amount of experience and knowledge regarding fuel performance at the engineering scale. The limitation of advance…
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U-10Zr-based metallic nuclear fuel is a promising fuel candidate for next-generation sodium-cooled fast reactors.The research experience of the Idaho National Laboratory for this type of fuel dates back to the 1960s. Idaho National Laboratory researchers have accumulated a considerable amount of experience and knowledge regarding fuel performance at the engineering scale. The limitation of advanced characterization and lack of proper data analysis tools prevented a mechanistic understanding of fuel microstructure evolution and properties degradation during irradiation. This paper proposed a new workflow, coupled with domain knowledge obtained by advanced post-irradiation examination methods, to provide unprecedented and quantified insights into the fission gas bubbles and pores, and lanthanide distribution in an annular fuel irradiated in the Advanced Test Reactor. In the study, researchers identify and confirm that the Zr-bearing secondary phases exist and generate the quantitative ratios of seven microstructures along the thermal gradient. Moreover, the distributions of fission gas bubbles on two samples of U-10Zr advanced fuels were quantitatively compared. Conclusive findings were obtained and allowed for evaluation of the lanthanide transportation through connected bubbles based on approximately 67,000 fission gas bubbles of the two advanced samples.
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Submitted 17 October, 2022;
originally announced October 2022.
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Single-crystal elastic moduli, anisotropy and the B1-B2 phase transition of NaCl at high pressures: Experiment vs. ab-initio calculations
Authors:
Feng Xu,
Laurent Belliard,
Chenhui Li,
Philippe Djemia,
Loïc Becerra,
Haijun Huang,
Bernard Perrin,
Andreas Zerr
Abstract:
Single-crystal elastic moduli, Cij, and the B1-B2 phase transition of NaCl were investigated experimentally, using time-domain Brillouin scattering (TDBS), and theoretically, via density-functional-theory (DFT), to 41 GPa. Thus, we largely extended pressure range where Cij and elastic anisotropy of the solid are measured, including the first experimental data for the high-pressure B2 phase, NaCl-B…
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Single-crystal elastic moduli, Cij, and the B1-B2 phase transition of NaCl were investigated experimentally, using time-domain Brillouin scattering (TDBS), and theoretically, via density-functional-theory (DFT), to 41 GPa. Thus, we largely extended pressure range where Cij and elastic anisotropy of the solid are measured, including the first experimental data for the high-pressure B2 phase, NaCl-B2. NaCl-B1 exhibits a strong and growing with pressure anisotropy, in contrast to NaCl-B2. Theoretical values obtained using different advanced DFT functionals were compared with our measurements but no one could satisfactorily reproduce our experimental data for NaCl-B1 and NaCl-B2 simultaneously. For all available DFT results on the principal shear moduli and anisotropy, the deviation became pronounced when the degree of compression increased significantly. Similar deviations could be also recognized for other cubic solids having the same B1-type structure and similar bonding, such as CaO, MgO, or (Mg1-x,Fex)O. Furthermore, the available experimental data suggest that the B1-B2 phase transition of NaCl and the above mentioned compounds are governed by the Born stability criterion C44(P) - P > 0.
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Submitted 22 September, 2022;
originally announced September 2022.
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Universal behavior of magnon-mediated spin transport in disordered NM/NM/FI heterostructure
Authors:
Gaoyang Li,
Fuming Xu,
Jian Wang
Abstract:
We numerically investigate the magnon-mediated spin transport and scaling behaviors of a nonmagnetic metal/nonmagnetic metal/ferromagnetic insulator (NM/NM/FI) heterostructure in the presence of Anderson disorders. For the two-dimensional (2D) NM/NM/FI system, an enhancement of spin conductance in the weak disorder regime is found due to the increasing of the interfacial density of states (DOS) at…
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We numerically investigate the magnon-mediated spin transport and scaling behaviors of a nonmagnetic metal/nonmagnetic metal/ferromagnetic insulator (NM/NM/FI) heterostructure in the presence of Anderson disorders. For the two-dimensional (2D) NM/NM/FI system, an enhancement of spin conductance in the weak disorder regime is found due to the increasing of the interfacial density of states (DOS) at NM/FI interface. As a result, a new scaling regime is uncovered in the metallic regime where the spin conductance fluctuation rms(G) scales linearly with the average spin conductance <G>, independent of system parameters such as Fermi energies and temperatures. The competition between the disorder-enhanced interfacial DOS and disorder-suppressed spin transport results in a non-monotonic dependence of average spin conductance on disorder strength. In the localized regime, the variance of lnG for different system parameters follows a universal function that depends linearly on the average of logarithm of spin conductance <lnG>.The distribution of lnG in the localized regime is non-Gaussian whose deviation from Gaussian can be characterized by the third and fourth order cumulants of lnG, denoted as k3 and k4, respectively. We find that k3~<-lnG>^3/2 and k4~<lnG>^2. This suggests that the spin conductance mediated by magnon in NM/NM/FI hybrid systems belongs to a different universality class. For fixed <lnG>, the lnG distribution in the localized regime for different system parameters is found to collapse onto a single curve, suggesting the distribution P(lnG;<lnG>) is a universal function that depends only on <lnG>. Furthermore, spin thermopower S in the presence of disorder is studied and the variance of lnS is found to scale linearly with <lnS> for different system parameters in the localized regime. Spin conductance and spin thermopower for 1D NM/NM/FI are also studied.
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Submitted 2 March, 2023; v1 submitted 11 August, 2022;
originally announced August 2022.
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Topological Defect Lines in Two Dimensional Fermionic CFTs
Authors:
Chi-Ming Chang,
Jin Chen,
Fengjun Xu
Abstract:
We consider topological defect lines (TDLs) in two-dimensional fermionic conformal field theories (CFTs). Besides inheriting all the properties of TDLs in bosonic CFTs, TDLs in fermionic CFTs could host fermionic defect operators at their endpoints and junctions. Furthermore, there is a new type of TDLs, called q-type TDLs, that have no analog in bosonic CFTs. Their distinguishing feature is an ex…
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We consider topological defect lines (TDLs) in two-dimensional fermionic conformal field theories (CFTs). Besides inheriting all the properties of TDLs in bosonic CFTs, TDLs in fermionic CFTs could host fermionic defect operators at their endpoints and junctions. Furthermore, there is a new type of TDLs, called q-type TDLs, that have no analog in bosonic CFTs. Their distinguishing feature is an extra one-dimensional Majorana fermion living on the worldline of the TDLs. The properties of TDLs in fermionic CFTs are captured in the mathematical language of the super fusion category. We propose a classification of the rank-2 super fusion categories generalizing the $\mathbb Z_8$ classification for the anomalies of $\mathbb Z_2$ symmetry. We explicitly solve the F-moves for all the nontrivial categories, and derive the corresponding spin selection rules that constrain the spectrum of the defect operators. We find the full set of TDLs in the standard fermionic minimal models and a partial set of TDLs in the two exceptional models, which give CFT realizations to the rank-2 super fusion categories. Finally, we discuss a constraint on the renormalization group flow that preserves a q-type TDL.
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Submitted 3 April, 2023; v1 submitted 4 August, 2022;
originally announced August 2022.
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Quantum third-order nonlinear Hall effect of a four-terminal device with time-reversal symmetry
Authors:
Miaomiao Wei,
Longjun Xiang,
Luyang Wang,
Fuming Xu,
Jian Wang
Abstract:
The third-order nonlinear Hall effect induced by Berry-connection polarizability tensor has been observed in Weyl semimetals T$_d$-MoTe$_2$ as well as T$_d$-TaIrTe$_4$. The experiments were performed on bulk samples, and the results were interpreted with the semiclassical Boltzmann approach. Beyond the bulk limit, we develop a quantum nonlinear transport theory to investigate the third-order Hall…
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The third-order nonlinear Hall effect induced by Berry-connection polarizability tensor has been observed in Weyl semimetals T$_d$-MoTe$_2$ as well as T$_d$-TaIrTe$_4$. The experiments were performed on bulk samples, and the results were interpreted with the semiclassical Boltzmann approach. Beyond the bulk limit, we develop a quantum nonlinear transport theory to investigate the third-order Hall response of a four-terminal setup with time-reversal symmetry in quantum regime. The quantum nonlinear theory is verified on a model system of monolayer MoTe$_2$, and numerical results on the angle-resolved Hall currents are qualitatively consistent with the experiment. More importantly, quantum signatures of the third-order Hall effect are revealed, which are independent of the system symmetry. The first quantum signature is quantum enhancement of the third-order Hall current, which is characterized by sharp current peaks whose magnitudes are three orders larger than the first-order Hall current. Such quantum enhancement originates from quantum interference in coherent transport, and it can be easily destroyed by dephasing effect. The second quantum signature is disorder-induced enhancement of the third-order Hall current for weak disorders. Our findings reveal quantum characteristics of the third-order Hall effect, and we propose feasible ways to enhance it in nanoscale systems. The quantum third-order theory developed in this work provides a general formalism for describing nonlinear coherent transport properties in multi-terminal devices, regardless of the system symmetry.
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Submitted 22 July, 2022;
originally announced July 2022.
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Quantum phase transition in magnetic nanographenes on a lead superconductor
Authors:
Yu Liu,
Can Li,
Fu-Hua Xue,
Ying Wang,
Haili Huang,
Hao Yang,
Jiayi Chen,
Dan-Dan Guan,
Yao-Yi Li,
Hao Zheng,
Canhua Liu,
Mingpu Qin,
Xiaoqun Wang,
Deng-Yuan Li,
Pei-Nian Liu,
Shiyong Wang,
Jinfeng Jia
Abstract:
Quantum spins, referred to the spin operator preserved by full SU(2) symmetry in the absence of the magnetic anistropy, have been proposed to host exotic interactions with superconductivity4. However, spin orbit coupling and crystal field splitting normally cause a significant magnetic anisotropy for d/f-shell spins on surfaces6,9, breaking SU(2) symmetry and fabricating the spins with Ising prope…
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Quantum spins, referred to the spin operator preserved by full SU(2) symmetry in the absence of the magnetic anistropy, have been proposed to host exotic interactions with superconductivity4. However, spin orbit coupling and crystal field splitting normally cause a significant magnetic anisotropy for d/f-shell spins on surfaces6,9, breaking SU(2) symmetry and fabricating the spins with Ising properties10. Recently, magnetic nanographenes have been proven to host intrinsic quantum magnetism due to their negligible spin orbital coupling and crystal field splitting. Here, we fabricate three atomically precise nanographenes with the same magnetic ground state of spin S=1/2 on Pb(111) through engineering sublattice imbalance in graphene honeycomb lattice. Scanning tunneling spectroscopy reveals the coexistence of magnetic bound states and Kondo screening in such hybridized system. Through engineering the magnetic exchange strength between the unpaired spin in nanographenes and cooper pairs, quantum phase transition from the singlet to the doublet state has been observed, in consistent with quantum models of spins on superconductors. Our work demonstrates delocalized graphene magnetism host highly tunable magnetic bound states with cooper pairs, which can be further developed to study the Majorana bound states and other rich quantum physics of low-dimensional quantum spins on superconductors.
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Submitted 12 July, 2022;
originally announced July 2022.
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Multifunctional Two-dimensional van der Waals Janus Magnet Cr-based Dichalcogenide Halides
Authors:
Yusheng Hou,
Feng Xue,
Liang Qiu,
Zhe Wang,
Ruqian Wu
Abstract:
Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y=S, Se, Te; X=Cl, Br, I), we find that CrSX (X=Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-p…
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Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y=S, Se, Te; X=Cl, Br, I), we find that CrSX (X=Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-plane magnetization. Excitingly, by the benefit of the large magnetic moments on ligand S2- anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively. Additionally, we show that large Dzyaloshinskii-Moriya interactions give rise to skyrmion states in CrTeX (X=Cl, Br, I) under external magnetic fields. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.
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Submitted 9 May, 2022;
originally announced May 2022.
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Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
Authors:
H. J. Hu,
W. L. Zhen,
S. R. Weng,
Y. D. Li,
R. Niu,
Z. L. Yue,
F. Xu,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report…
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Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10$^4$ A W$^{-1}$), specific detectivity (2.5 x 10$^{14}$ Jones) and external quantum efficiency (1.8 x 10$^7$%) when $V_{\textrm {ds}}$ = 3 V, $λ$ = 515 nm and $P$ = 0.01 mW cm$^{-2}$. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.
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Submitted 4 May, 2022;
originally announced May 2022.
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Confinement-driven inverse domain scaling in polycrystalline ErMnO3
Authors:
Jan Schultheiß,
Fei Xue,
Erik Roede,
Håkon W. Ånes,
Frida H. Danmo,
Sverre M. Selbach,
Long-Qing Chen,
Dennis Meier
Abstract:
The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically p…
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The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the grain size increases, smaller domains are formed, which we relate to the interaction of the topological vortices with local strain fields. The inversion of the domain scaling behavior has far-reaching implications, providing fundamentally new opportunities for topology-based domain engineering and the tuning of the electromechanical and dielectric performance of ferroelectrics in general.
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Submitted 17 April, 2022;
originally announced April 2022.
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Topological Defects Induced High-Spin Quartet State in Truxene-Based Molecular Graphenoids
Authors:
Can Li,
Yu Liu,
Yufeng Liu,
Fu-Hua Xue,
Dandan Guan,
Yaoyi Li,
Hao Zheng,
Canhua Liu,
Jinfeng Jia,
Pei-Nian Liu,
Deng-Yuan Li,
Shiyong Wang
Abstract:
Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been widely studied, collective magnetic behaviors originating from well-organized multiple topological defects remain a great challenge. Here, we studied the collective…
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Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been widely studied, collective magnetic behaviors originating from well-organized multiple topological defects remain a great challenge. Here, we studied the collective magnetic properties originating from three pentagon topological defects in truxene-based molecular graphenoids by using scanning tunneling microscopy and non-contact atomic force microscopy. Unpaired $π$ electrons are introduced into the aromatic topology of truxene molecular graphenoids one by one by dissociating hydrogen atoms at the pentagon defects via atom manipulation. Scanning tunneling spectroscopy measurements together with density functional theory calculations suggest that the unpaired electrons are ferromagnetically coupled, forming a collective high-spin quartet state of S=3/2. Our work demonstrates that the collective spin ordering can be realized through engineering regular patterned topological defects in molecular graphenoids, providing a new platform for designer one-dimensional ferromagnetic spin chains and two-dimensional ferromagnetic networks.
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Submitted 8 February, 2022;
originally announced February 2022.
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Stability and low-energy orientations of interphase boundaries in multiaxial ferroelectrics: Phase-field simulations
Authors:
Yang Zhang,
Fei Xue,
Bo Wang,
Jia-Mian Hu,
Shuai Dong,
Jun-Ming Liu,
Long-Qing Chen
Abstract:
The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the stability and low-energy orientations of boundaries between different phases in ferroelectrics. Taking lead zirconate titanate and bismuth ferrite as two example…
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The coexistence of different ferroelectric phases enables the tunability of the macroscopic properties and extensive applications from piezoelectric transducers to nonvolatile memories. Here we develop a thermodynamic model to predict the stability and low-energy orientations of boundaries between different phases in ferroelectrics. Taking lead zirconate titanate and bismuth ferrite as two examples, we demonstrate that the low-energy orientations of interphase boundaries are largely determined by minimizing the electrostatic and elastic energies. Phase-field simulations are employed to analyze the competition between the interfacial energy and the electrostatic and elastic energies. Our simulation results demonstrate that the lowering of crystal symmetry could occur due to the electrical and mechanical incompatibilities between the two phases, which can be used to explain the experimentally observed low-symmetry phases near morphotropic phase boundaries. Our work provides theoretical foundations for understanding and controlling the interphase boundaries in ferroelectric materials for multifunctional applications.
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Submitted 24 January, 2022;
originally announced January 2022.
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Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te
Authors:
L. Chen,
L. Q. Zhou,
Y. Zhou,
C. Liu,
Z. N. Guo,
S. Y. Gao,
W. H. Fan,
J. F. Xu,
Y. X. Guo,
K,
Liao,
J. O. Wang,
H. M. Weng,
G. Wang
Abstract:
Looking for new materials with Dirac points has been a fascinating subject of research. Here we report the growth, crystal structure, and band structure of HfGe0.92Te single crystals, featuring three different types of Dirac points. HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No. 129), having square Ge-atom plane with vacancies about 8%. Despite the vacancies on Ge sit…
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Looking for new materials with Dirac points has been a fascinating subject of research. Here we report the growth, crystal structure, and band structure of HfGe0.92Te single crystals, featuring three different types of Dirac points. HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No. 129), having square Ge-atom plane with vacancies about 8%. Despite the vacancies on Ge site, the Dirac nodal line composed of conventional Dirac points vulnerable to spin-orbit coupling (SOC) is observed using angle-resolved photoemission spectroscopy, accompanied with the robust Dirac line protected by the nonsymmorphic symmetry against both SOC and vacancies. Specially, spin-orbit Dirac points (SDPs) originated from the surface formed under SOC are hinted to exist according to our experiments and calculations. Quasi-two-dimensional (quasi-2D) characters are observed and further confirmed by angular-resolved magnetoresistance. HfGe0.92Te is a good candidate to explore exotic topological phases or topological properties with three different types of Dirac points and a promising candidate to realize 2D SDPs.
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Submitted 15 January, 2022;
originally announced January 2022.
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Nonvolatile Electric-Field Control of Inversion Symmetry
Authors:
Lucas Caretta,
Yu-Tsun Shao,
Jia Yu,
Antonio B. Mei,
Bastien F. Grosso,
Cheng Dai,
Piush Behera,
Daehun Lee,
Margaret McCarter,
Eric Parsonnet,
Harikrishnan K. P.,
Fei Xue,
Ed Barnard,
Steffen Ganschow,
Archana Raja,
Lane W. Martin,
Long-Qing Chen,
Manfred Fiebig,
Keji Lai,
Nicola A. Spaldin,
David A. Muller,
Darrell G. Schlom,
Ramamoorthy Ramesh
Abstract:
In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers con…
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In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.
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Submitted 2 January, 2022;
originally announced January 2022.
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Self-repairing high entropy oxides
Authors:
Zongwen Liu,
Pengru Huang,
Lixian Sun,
Yanping Liu,
Jiangtao Qu,
Julie Cairney,
Zhong Zheng,
Zhiming M. Wang,
Naveed A. Khan,
Zhiping Lai,
Li Fu,
Bing Teng,
Cuifeng Zhou,
Hong Zhao,
Fen Xu,
Pan Xiong,
Junwu Zhu,
Peng Yuan,
Kosta Tsoutas,
Behnam Akhavan,
Marcela M. Bilek,
Simon P. Ringer,
Kostya S. Novoselov
Abstract:
All biological organisms, from plants to living creatures, can heal minor wounds and damage. The realization of a similar self-healing capacity in inorganic materials has been a design target for many decades. This would represent a breakthrough in materials engineering, enabling many novel technological applications, since such materials would be able to resist damage caused by electromagnetic ir…
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All biological organisms, from plants to living creatures, can heal minor wounds and damage. The realization of a similar self-healing capacity in inorganic materials has been a design target for many decades. This would represent a breakthrough in materials engineering, enabling many novel technological applications, since such materials would be able to resist damage caused by electromagnetic irradiation and/or mechanical impact. Here we demonstrate that a high-entropy oxide is intrinsically capable of undergoing an autonomous self-repairing process. Transmission electron microscopy revealed that the spinel structure of (AlCoCrCu0.5FeNi)3O4 can regrow and repair itself at the atomic level when damaged. Density functional theory calculations reveal that the extra enthalpy stored in the high entropy material during fabrication can be released to effectively heal macroscopic defects by regrowing into a partially ordered state. This extraordinary self-repairing phenomenon makes this new material highly desirable as a coating, enabling structures used in harsh environments to better withstand damage, such as cosmic irradiation in space, nuclear irradiation in nuclear power facilities, or tribological damage. Most importantly, our results set the general design principles for the synthesis of self-repairing materials.
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Submitted 22 December, 2021;
originally announced December 2021.
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In-plane magnetic field induced density wave states near quantum spin Hall phase transitions
Authors:
Yongxin Zeng,
Fei Xue,
Allan H. MacDonald
Abstract:
We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we calculate phase diagrams as functions of the band gap, band hybridization, and magnetic field strength. We show that when the band hybridization is weak, the system…
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We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we calculate phase diagrams as functions of the band gap, band hybridization, and magnetic field strength. We show that when the band hybridization is weak, the system is unstable against the formation of density wave states. As the strength of the in-plane magnetic field increases, the density-wave region of the phase diagram expands and distinct density-wave states appear. We discuss possible experimental implications of our results.
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Submitted 14 December, 2021;
originally announced December 2021.
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Transport features of topological corner states in honeycomb lattice with multihollow structure
Authors:
Kai-Tong Wang,
Fuming Xu,
Bin Wang,
Yunjin Yu,
Yadong Wei
Abstract:
Higher-order topological phase in 2-dimensional (2D) systems is characterized by in-gap corner states, which are hard to detect and utilize. We numerically investigate transport properties of topological corner states in 2D honeycomb lattice, where the second-order topological phase is induced by an in-plane Zeeman field in the conventional Kane-Mele model. Through engineering multihollow structur…
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Higher-order topological phase in 2-dimensional (2D) systems is characterized by in-gap corner states, which are hard to detect and utilize. We numerically investigate transport properties of topological corner states in 2D honeycomb lattice, where the second-order topological phase is induced by an in-plane Zeeman field in the conventional Kane-Mele model. Through engineering multihollow structures with appropriate boundaries in honeycomb lattice, multiple corner states emerge, which greatly increases the probability to observe them. A typical two-probe setup is built to study the transport features of a diamond-shaped system with multihollow structures. Numerical results reveal the existence of global resonant states in bulk insulator, which corresponds to the resonant tunneling of multiple corner states and occupies the entire scattering region. Furthermore, based on the well separated energy levels of multiple corner states, a single-electron source is constructed.
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Submitted 20 December, 2021; v1 submitted 25 November, 2021;
originally announced November 2021.
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Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium
Authors:
Jonathan Gibbons,
Takaaki Dohi,
Vivek P. Amin,
Fei Xue,
Haowen Ren,
Jun-Wen Xu,
Hanu Arava,
Soho Shim,
Hilal Saglam,
Yuzi Liu,
John E. Pearson,
Nadya Mason,
Amanda K. Petford-Long,
Paul M. Haney,
Mark D. Stiles,
Eric E. Fullerton,
Andrew D. Kent,
Shunsuke Fukami,
Axel Hoffmann
Abstract:
Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferrom…
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Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance measurements and second harmonic Hall measurements characterizing the spin torques in antiferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (330$\pm$150) % at 170 K and (91$\pm$32) % at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques.
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Submitted 22 September, 2021;
originally announced September 2021.
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Nonlinear Hall effect induced by internal Coulomb interaction and phase relaxation process in a four-terminal system with time-reversal symmetry
Authors:
Miaomiao Wei,
Bin Wang,
Yunjin Yu,
Fuming Xu,
Jian Wang
Abstract:
We numerically investigate the second-order nonlinear Hall transport properties of a four-terminal system with time-reversal symmetry and broken inversion symmetry. Within the nonequilibrium Green's function formalism, the second-order nonlinear conductances are derived, where the internal Coulomb potential in response to external voltages is explicitly included to guarantee the gauge invariance.…
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We numerically investigate the second-order nonlinear Hall transport properties of a four-terminal system with time-reversal symmetry and broken inversion symmetry. Within the nonequilibrium Green's function formalism, the second-order nonlinear conductances are derived, where the internal Coulomb potential in response to external voltages is explicitly included to guarantee the gauge invariance. For the system with single mirror symmetry Mx, nonlinear Hall properties are only observable in the y direction and contributed solely from the second-order nonlinear effect. From the symmetry point of view, the observed nonlinear Hall transport phenomena have one-to-one correspondence with the Berry curvature dipole induced nonlinear Hall effect semiclassically obtained for the same Hamiltonian. In addition to the nonlinear Hall effect originated from symmetries of the system, it is found that the internal Coulomb potential has the same symmetry of the four-terminal system, which gives rise to an extra nonlinear Hall response. Moreover, the phase relaxation mechanism modeled by virtual probes leads to the dephasing-induced nonlinear Hall effect.
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Submitted 16 March, 2022; v1 submitted 16 September, 2021;
originally announced September 2021.
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The effects of diffusional couplings on compositional trajectories and interfacial free energies during phase separation in a quaternary Ni-Al-Cr-Re model superalloy
Authors:
Sung-Il Baik,
Zugang Mao,
Qingqiang Ren,
Fei Xue,
Carelyn E. Campbell,
Chuan Zhang,
Bicheng Zhou,
Ronald D. Noebe,
David N. Seidman
Abstract:
The temporal evolution of ordered gamma-prime(L12)-precipitates and the compositional trajectories during phase-separation of the gamma(face-centered-cubic(f.c.c.)) and gamma-prime(L12)-phases are studied in a Ni-0.10Al-0.085Cr-0.02Re(mole-fraction) superalloy, utilizing atom-probe tomography, transmission electron microscopy, and the Philippe-Voorhees (PV) coarsening model. As the gamma-prime(L12…
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The temporal evolution of ordered gamma-prime(L12)-precipitates and the compositional trajectories during phase-separation of the gamma(face-centered-cubic(f.c.c.)) and gamma-prime(L12)-phases are studied in a Ni-0.10Al-0.085Cr-0.02Re(mole-fraction) superalloy, utilizing atom-probe tomography, transmission electron microscopy, and the Philippe-Voorhees (PV) coarsening model. As the gamma-prime(L12)-precipitates grow, the excesses of Ni, Cr and Re, and depletion of Al in the gamma(f.c.c.)-matrix develop as a result of diffusional fluxes crossing gamma(f.c.c.)/gamma-prime(L12) heterophase interfaces. The coupling effects on diffusional fluxes was introduced (PV coarsening model) in terms of the diffusion tensor, D, and the second-derivative tensor of the molar Gibbs free energies, G", obtained employing Thermo-Calc and DICTRA calculations. The Gibbs interfacial free energies are (6.9 +- 1.4) mJ/m2 with all terms in D and G", which changes to (18.9 +- 2.1) mJ/m2, (37.7 +- 3.3) mJ/m2, and (-7.5 +- 1.2) mJ/m2 without including the off-diagonal terms in D, G", and both D and G", respectively. The experimental APT compositional trajectories are displayed and compared with the PV model in a partial quaternary phase-diagram, employing a tetrahedron. The compositional trajectories measured by APT exhibit curvilinear behavior in the nucleation and growth regimes, which become vectors, moving simultaneously toward the gamma(f.c.c.) and gamma-prime(L12) conjugate solvus-surfaces, for the quasi-stationary coarsening regime. The compositional trajectories are compared to the PV model with and without the off-diagonal terms in D and G". The directions including the off-diagonal terms in D and G" tensors are consistent with the APT experimental data.
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Submitted 13 May, 2022; v1 submitted 11 August, 2021;
originally announced August 2021.
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Crystallography of the martensitic transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases
Authors:
Tingting Zhang,
Yuanyuan Gong,
Bin Wang,
Dongyu Cen,
Feng Xu
Abstract:
MnMX (M = Co or Ni, X = Si or Ge) alloys, experiencing structural transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases, attract considerable attention due to their potential applications as room-temperature solid refrigerants. Although lots of studies have been carried out on how to tune this transformation and obtain large entropy change in a wide temperature region, th…
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MnMX (M = Co or Ni, X = Si or Ge) alloys, experiencing structural transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases, attract considerable attention due to their potential applications as room-temperature solid refrigerants. Although lots of studies have been carried out on how to tune this transformation and obtain large entropy change in a wide temperature region, the crystallography of this martensitic transformation is still unknown. The biggest obstacle for crystallography investigation is to obtain a bulk sample, in which hexagonal and orthorhombic phases coexist, because the MnMX alloys will fragment into powders after experiencing the transformation. For this reason, we carefully tune the transformation temperature to be slightly below 300 K. In that case, a bulk sample with small amounts of orthorhombic phases distributed in hexagonal matrix is obtained. Most importantly, there are no cracks between the two phases. It facilities us to investigate the microstructure using electron microscope. The obtained results indicate that the orientation relationship between hexagonal and orthorhombic structures is [4-2-23]h//[120]o & (01-10)h//(001)o and the habit plane is {-2113.26}h. WLR theory is also adopted to calculate the habit plane. The calculated result agrees well with the measured one. Our work reveals the crystallography of hexagonal-orthorhombic transformation for the first time and is helpful for understanding the transformation-associated physical effects in MnMX alloys.
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Submitted 2 August, 2021;
originally announced August 2021.