-
Temperature evolution of the Fermi surface of the FeSe monolayer on STO
Authors:
Khalil Zakeri,
Ryan Roemer,
Ke Zou
Abstract:
The origin of superconductivity in FeSe monolayer on SrTiO$_3$ belongs to one of the unresolved mysteries in condensed-matter physics. Here by investigation of the temperature evolution of the dynamic charge response of FeSe/SrTiO$_3$ we demonstrate that the response of the monolayer itself is nearly temperature independent. This indicates a constant Fermi surface over a wide range of temperature,…
▽ More
The origin of superconductivity in FeSe monolayer on SrTiO$_3$ belongs to one of the unresolved mysteries in condensed-matter physics. Here by investigation of the temperature evolution of the dynamic charge response of FeSe/SrTiO$_3$ we demonstrate that the response of the monolayer itself is nearly temperature independent. This indicates a constant Fermi surface over a wide range of temperature, in stark contrast to that of the bulk FeSe and other Fe-based superconductors. Our results, which manifest the peculiarity of the electronic structure of the FeSe monolayer, may help for a microscopic understanding of the superconductivity in Fe-chalcogenide monolayers on oxide surfaces in general.
△ Less
Submitted 27 May, 2024;
originally announced May 2024.
-
Critical Role of Disorder for Superconductivity in the Series of Epitaxial Ti(O,N) Films
Authors:
Fengmiao Li,
Oliver Dicks,
Myung-Geun Han,
Solveig Aamlid,
Giorgio Levy,
Ronny Sutarto,
Chong Liu,
Hsiang-Hsi Kung,
Oleksandr Foyevstov,
Simon Godin,
Bruce A. Davidson,
Andrea Damascelli,
Yimei Zhu,
Christoph Heil,
Ilya Elfimov,
George A. Sawatzky,
Ke Zou
Abstract:
Experimental manipulation of superconductivity is of paramount importance, not only for practical applications but also for identifying the key factors involved in electron pairing. In this work, we have undertaken a meticulous study of the superconductivity in a series of titanium compounds with a rocksalt structure, synthesized as epitaxial films. We find that substituting nitrogen (N) for oxyge…
▽ More
Experimental manipulation of superconductivity is of paramount importance, not only for practical applications but also for identifying the key factors involved in electron pairing. In this work, we have undertaken a meticulous study of the superconductivity in a series of titanium compounds with a rocksalt structure, synthesized as epitaxial films. We find that substituting nitrogen (N) for oxygen (O) in titanium monoxide (TiO) with the stoichiometry close to TiO$_{0.6}$N$_{0.4}$ leads to superconductivity with a transition temperature (T$_c$) of ~2.6 K, about five times higher than that of TiO at ~0.5 K and half as high as the T$_c$ of ~6 K in titanium nitride (TiN). However, Eliashberg theoretical calculations predict similar Tc in TiO, Ti oxynitride and TiN. The analysis of electron mean free path suggests the presence of significant disorder in TiO and a remarkable reduction in the impact of disorder in oxynitrides. Density functional theory (DFT) calculations reveal that disorder decreases the coherence of electronic states for non-zero momenta, which would degrade the influence of electron-phonon. Our findings demonstrate the disorder and superconductivity depend strongly on the N/O ratio, highlighting the critical role of disorder for superconductivity in this series of Ti(O,N) materials.
△ Less
Submitted 4 October, 2023;
originally announced October 2023.
-
Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction
Authors:
Chong Liu,
Kai Chang,
Ke Zou
Abstract:
Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic…
▽ More
Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.
△ Less
Submitted 24 August, 2022; v1 submitted 13 July, 2022;
originally announced July 2022.
-
Controlling the electrical and magnetic ground states by doping in the complete phase diagram of titanate Eu1-xLaxTiO3 thin films
Authors:
Hyungki Shin,
Chong Liu,
Fengmiao Li,
Ronny Sutarto,
Bruce A. Davidson,
Ke Zou
Abstract:
EuTiO3, a band insulator, and LaTiO3, a Mott insulator, are both antiferromagnetic with transition temperatures ~ 5.5 K and ~ 160 K, respectively. Here, we report the synthesis of Eu1-xLaxTiO3 thin films with x = 0 to 1 by oxide molecular beam epitaxy. The films in the full range have high crystalline quality and show no phase segregation, allowing us carry out transport measurements to study thei…
▽ More
EuTiO3, a band insulator, and LaTiO3, a Mott insulator, are both antiferromagnetic with transition temperatures ~ 5.5 K and ~ 160 K, respectively. Here, we report the synthesis of Eu1-xLaxTiO3 thin films with x = 0 to 1 by oxide molecular beam epitaxy. The films in the full range have high crystalline quality and show no phase segregation, allowing us carry out transport measurements to study their electrical and magnetic properties. From x = 0.03 to 0.95, Eu1-xLaxTiO3 films show conduction by electrons as charge carriers, with differences in carrier densities and mobilities, contrary to the insulating nature of pure EuTiO3 and LaTiO3. Following a rich phase diagram, the magnetic ground states of the films vary with increasing La-doping level, changing Eu1-xLaxTiO3 from an antiferromagnetic insulator to an antiferromagnetic metal, a ferromagnetic metal, a paramagnetic metal, and back to an antiferromagnetic insulator. These emergent properties reflect the evolutions of the band structure, mainly at the Ti t2g bands near the Fermi level, when Eu2+ are gradually replaced by La3+. This work sheds light on this method for designing the electrical and magnetic properties in strongly-correlated oxides and completes the phase diagram of the titanate Eu1-xLaxTiO3.
△ Less
Submitted 19 May, 2020;
originally announced May 2020.
-
Tuning stoichiometry and its impact on superconductivity of monolayer and multilayer FeSe on SrTiO3
Authors:
Chong Liu,
Ke Zou
Abstract:
Synthesis of monolayer FeSe on SrTiO3, with greatly enhanced superconductivity compared to bulk FeSe, remains difficult. Lengthy annealing within a certain temperature window is always required to achieve superconducting samples as reported by different groups around the world, but the mechanism of annealing in inducing superconductivity has not been elucidated. We grow FeSe films on SrTiO3 by mol…
▽ More
Synthesis of monolayer FeSe on SrTiO3, with greatly enhanced superconductivity compared to bulk FeSe, remains difficult. Lengthy annealing within a certain temperature window is always required to achieve superconducting samples as reported by different groups around the world, but the mechanism of annealing in inducing superconductivity has not been elucidated. We grow FeSe films on SrTiO3 by molecular beam epitaxy and adjust the stoichiometry by depositing additional small amounts of Fe atoms. The monolayer films become superconducting after the Fe deposition without any annealing, and show similar superconducting transition temperatures as those of the annealed films in transport measurements. We also demonstrate on the 5-unit-cell films that the FeSe multilayer can be reversibly tuned between the non-superconducting $\sqrt{5} \times \sqrt{5}$ phase with Fe-vacancies and superconducting $1 \times 1$ phase. Our results reveal that the traditional anneal process in essence removes Fe vacancies and the additional Fe deposition serves as a more efficient way to achieve superconductivity. This work highlights the significance of stoichiometry in the superconductivity of FeSe thin films and provides an easy path for superconducting samples.
△ Less
Submitted 14 February, 2020;
originally announced February 2020.
-
Epitaxial Growth of Perovskite SrBiO$_3$ Film on SrTiO$_3$ by Oxide Molecular Beam Epitaxy
Authors:
Fengmiao Li,
Bruce A. Davidson,
Ronny Sutarto,
Hyungki Shin,
Chong Liu,
Ilya Elfimov,
Kateryna Foyevtsova,
Feizhou He,
George A. Sawatzky,
Ke Zou
Abstract:
Hole-doped perovskite bismuthates such as Ba$_{1-x}$K$_x$BiO$_3$ and Sr$_{1-x}$K$_x$BiO$_3$ are well-known bismuth-based oxide high-transition-temperature superconductors. Reported thin bismuthate films show relatively low quality, likely due to their large lattice mismatch with the substrate and a low sticking coefficient of Bi at high temperatures. Here, we report the successful epitaxial thin f…
▽ More
Hole-doped perovskite bismuthates such as Ba$_{1-x}$K$_x$BiO$_3$ and Sr$_{1-x}$K$_x$BiO$_3$ are well-known bismuth-based oxide high-transition-temperature superconductors. Reported thin bismuthate films show relatively low quality, likely due to their large lattice mismatch with the substrate and a low sticking coefficient of Bi at high temperatures. Here, we report the successful epitaxial thin film growth of the parent compound strontium bismuthate SrBiO$_3$ on SrO-terminated SrTiO$_3$ (001) substrates by molecular beam epitaxy. Two different growth methods, high-temperature co-deposition or recrystallization cycles of low-temperature deposition plus high-temperature annealing, are developed to improve the epitaxial growth. SrBiO$_3$ has a pseudocubic lattice constant $\sim$4.25 Å, an $\sim$8.8\% lattice mismatch on SrTiO$_3$ substrate, leading to a large strain in the first few unit cells. Films thicker than 6 unit cells prepared by both methods are fully relaxed to bulk lattice constant and have similar quality. Compared to high-temperature co-deposition, the recrystallization method can produce higher quality 1-6 unit cell films that are coherently or partially strained. Photoemission experiments reveal the bonding and antibonding states close to the Fermi level due to Bi and O hybridization, in good agreement with density functional theory calculations. This work provides general guidance to the synthesis of high-quality perovskite bismuthate films.
△ Less
Submitted 7 October, 2019;
originally announced October 2019.
-
Topological bosonic states on ribbons of honeycomb lattice
Authors:
Yiping Wang,
Xingchuan Zhu,
Kefei Zou,
Shengyuan A. Yang,
Huaiming Guo
Abstract:
The topological properties of hardcore bosons on ribbons of honeycomb lattice are studied using quantum Monte Carlo simulations. We map out a rich phase diagram with the superfluid and insulator phases at various fillings. Particularly, it is revealed that the insulator state at half filling is a topological bosonic state, which is characterized by a nontrivial Berry phase and a pair of edge state…
▽ More
The topological properties of hardcore bosons on ribbons of honeycomb lattice are studied using quantum Monte Carlo simulations. We map out a rich phase diagram with the superfluid and insulator phases at various fillings. Particularly, it is revealed that the insulator state at half filling is a topological bosonic state, which is characterized by a nontrivial Berry phase and a pair of edge states. We provide intuitive picture to understand this topological bosonic insulator state by showing that it can be adiabatically mapped to a topological fermionic model. It is also shown that the topological edge states are robust against weak interactions beyond the hardcore repulsion. Our results can be simulated by using bosonic cold atoms trapped in designed optical lattices.
△ Less
Submitted 9 August, 2018;
originally announced August 2018.
-
Suppression of the Spectral Weight of Topological Surface States on the Nanoscale via Local Symmetry Breaking
Authors:
Omur E. Dagdeviren,
Subhasish Mandal,
Ke Zou,
Chao Zhou,
Georg H. Simon,
Frederick J. Walker,
Charles H. Ahn,
Udo D. Schwarz,
Sohrab Ismail-Beigi,
Eric I. Altman
Abstract:
In topological crystalline insulators the topological conducting surface states are protected by crystal symmetry, in principle making it possible to pattern nanoscale insulating and conductive motifs solely by breaking local symmetries on an otherwise homogenous, single-phase material. We show using scanning tunneling microscopy/spectroscopy that defects that break local symmetry of SnTe suppress…
▽ More
In topological crystalline insulators the topological conducting surface states are protected by crystal symmetry, in principle making it possible to pattern nanoscale insulating and conductive motifs solely by breaking local symmetries on an otherwise homogenous, single-phase material. We show using scanning tunneling microscopy/spectroscopy that defects that break local symmetry of SnTe suppress electron tunneling over an energy range as large as the bulk band gap, an order of magnitude larger than that produced globally via magnetic fields or uniform structural perturbations. Complementary ab initio calculations show how local symmetry breaking obstructs topological surface states as shown by a threefold reduction of the spectral weight of the topological surface states. The finding highlights the potential benefits of manipulating the surface morphology to create devices that take advantage of the unique properties of topological surface states and can operate at practical temperatures.
△ Less
Submitted 30 November, 2018; v1 submitted 1 April, 2018;
originally announced April 2018.
-
Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction
Authors:
J. Li,
L. Z. Tan,
K. Zou,
A. A. Stabile,
D. J. Seiwell,
K. Watanabe,
T. Taniguchi,
Steven G. Louie,
J. Zhu
Abstract:
In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes $m^*_e$ and $m^*_h$ in bilayer graphene in the low carrier density regime of order 1 * 10^11 cm^-2. Measur…
▽ More
In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes $m^*_e$ and $m^*_h$ in bilayer graphene in the low carrier density regime of order 1 * 10^11 cm^-2. Measurements use temperature-dependent low-field Shubnikov-de Haas (SdH) oscillations are observed in high-mobility hexagonal boron nitride (h-BN) supported samples. We find that while $m^*_e$ follows a tight-binding description in the whole density range, $m^*_h$ starts to drop rapidly below the tight-binding description at carrier density n = 6 * 10^11 cm^-2 and exhibits a strong suppression of 30% when n reaches 2 * 10^11 cm^-2. Contributions from electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This study reveals an unusual disorder effect unique to two-dimensional semi-metallic systems.
△ Less
Submitted 1 November, 2016;
originally announced November 2016.
-
The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors
Authors:
Ke Zou,
Subhasish Mandal,
Stephen Albright,
Rui Peng,
Yujia Pu,
Divine Kumah,
Claudia Lau,
Georg Simon,
Omur E. Dagdeviren,
Xi He,
Ivan Bozovic,
Udo D. Schwarz,
Eric I. Altman,
Donglai Feng,
Fred J. Walker,
Sohrab Ismail-Beigi,
Charles H. Ahn
Abstract:
We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab in…
▽ More
We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor.
△ Less
Submitted 4 May, 2016;
originally announced May 2016.
-
Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
Authors:
K. Zou,
Fan Zhang,
C. Clapp,
A. H. MacDonald,
J. Zhu
Abstract:
We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of the perpendicular electric field and the Fermi level over an unprecedentedly large range. We observe a resistance change of six orders of magnitude in the ABC tri…
▽ More
We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of the perpendicular electric field and the Fermi level over an unprecedentedly large range. We observe a resistance change of six orders of magnitude in the ABC trilayer, which demonstrates the opening of a band gap. Our data suggest that the gap saturates at a large displacement field of D ~ 3 V/nm, in agreement with self-consistent Hartree calculations. In contrast, the ABA trilayer remains metallic even under a large perpendicular electric field. Despite the absence of a band gap, the band structure of the ABA trilayer continues to evolve with increasing D. We observe signatures of two-band conduction at large D fields. Our self-consistent Hartree calculation reproduces many aspects of the experimental data, but also points to the need for more sophisticated theory.
△ Less
Submitted 14 February, 2013;
originally announced February 2013.
-
Integrating Functional Oxides with Graphene
Authors:
X. Hong,
K. Zou,
A. M. DaSilva,
C. H. Ahn,
J. Zhu
Abstract:
Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding th…
▽ More
Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures.
△ Less
Submitted 23 April, 2012;
originally announced April 2012.
-
Evidence for spin-flip scattering and local moments in dilute fluorinated graphene
Authors:
X. Hong,
K. Zou,
B. Wang,
S. -H. Cheng,
J. Zhu
Abstract:
The issue of whether local magnetic moments can be formed by introducing adatoms into graphene is of intense research interest because it opens the window to fundamental studies of magnetism in graphene, as well as of its potential spintronics applications. To investigate this question we measure, by exploiting the well-established weak localization physics, the phase coherence length L_phi in dil…
▽ More
The issue of whether local magnetic moments can be formed by introducing adatoms into graphene is of intense research interest because it opens the window to fundamental studies of magnetism in graphene, as well as of its potential spintronics applications. To investigate this question we measure, by exploiting the well-established weak localization physics, the phase coherence length L_phi in dilute fluorinated graphene. L_phi reveals an unusual saturation below ~ 10 K, which cannot be explained by non-magnetic origins. The corresponding phase breaking rate increases with decreasing carrier density and increases with increasing fluorine density. These results provide strong evidence for spin-flip scattering and points to the existence of adatom-induced local magnetic moment in fluorinated graphene. Our results will stimulate further investigations of magnetism and spintronics applications in adatom-engineered graphene.
△ Less
Submitted 8 April, 2012;
originally announced April 2012.
-
Electron-electron interaction and electron-hole asymmetry in bilayer graphene (Supporting Materials)
Authors:
K. Zou,
X. Hong,
J. Zhu
Abstract:
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately…
▽ More
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately 20-30% larger than the electron mass m*_e. Tight-binding calculations provide a good description of the electron-hole asymmetry and yield an accurate measure of the inter-layer hopping parameter v_4 = 0.063. Both m*_h and m*_e are substantially suppressed compared to single-particle values, providing clear and unprecedented evidence for the strong renormalization effect of electron-electron interaction in the band structure of bilayer graphene.
△ Less
Submitted 22 August, 2011; v1 submitted 10 March, 2011;
originally announced March 2011.
-
Electron-electron interaction and electron-hole asymmetry in bilayer graphene
Authors:
K. Zou,
X. Hong,
J. Zhu
Abstract:
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately…
▽ More
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately 20-30% larger than the electron mass m*_e. Tight-binding calculations provide a good description of the electron-hole asymmetry and yield an accurate measure of the inter-layer hopping parameter v_4 = 0.063. Both m*_h and m*_e are substantially suppressed compared to single-particle values, providing clear and unprecedented evidence for the strong renormalization effect of electron-electron interaction in the band structure of bilayer graphene.
△ Less
Submitted 21 July, 2011; v1 submitted 8 March, 2011;
originally announced March 2011.
-
Transport in gapped bilayer graphene: the role of potential fluctuations (Supplementary Information)
Authors:
K. Zou,
J. Zhu
Abstract:
Online Supplementary Information for arXiv:1008.0783
Online Supplementary Information for arXiv:1008.0783
△ Less
Submitted 5 August, 2010;
originally announced August 2010.
-
Transport in gapped bilayer graphene: the role of potential fluctuations
Authors:
K. Zou,
J. Zhu
Abstract:
We employ a dual-gated geometry to control the band gap Δin bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two thermally activated processes in different temperature regimes and exhibits exp(T3/T)^{1/3} below 5 K. We develop a simple model to account for the experimental observatio…
▽ More
We employ a dual-gated geometry to control the band gap Δin bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two thermally activated processes in different temperature regimes and exhibits exp(T3/T)^{1/3} below 5 K. We develop a simple model to account for the experimental observations, which highlights the crucial role of localized states produced by potential fluctuations. The high temperature conduction is attributed to thermal activation to the mobility edge. The activation energy approaches Δ/2 at large band gap. At intermediate and low temperatures, the dominant conduction mechanisms are nearest neighbor hopping and variable-range hopping through localized states. Our systematic study provides a coherent understanding of transport in gapped bilayer graphene.
△ Less
Submitted 4 August, 2010;
originally announced August 2010.
-
Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3
Authors:
X. Hong,
J. Hoffman,
A. Posadas,
K. Zou,
C. H. Ahn,
J. Zhu
Abstract:
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is…
▽ More
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 hours at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.
△ Less
Submitted 7 July, 2010;
originally announced July 2010.
-
Mechanism for current saturation and energy dissipation in graphene transistors
Authors:
Ashley M. DaSilva,
Ke Zou,
J. K. Jain,
J. Zhu
Abstract:
From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field transport in single as well as double-oxide graphene transistors. We further show unambiguously that scattering from the substrate and superstrate surface optic…
▽ More
From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field transport in single as well as double-oxide graphene transistors. We further show unambiguously that scattering from the substrate and superstrate surface optical (SO) phonons governs the high field transport and heat dissipation over a wide range of experimentally relevant parameters. Models that neglect SO phonons altogether or treat them in a simple phenomenological manner are inadequate. We outline possible strategies for achieving higher current and complete saturation in graphene devices.
△ Less
Submitted 8 May, 2010;
originally announced May 2010.
-
Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor
Authors:
S. -H. Cheng,
K. Zou,
F. Okino,
H. R. Gutierrez,
A. Gupta,
N. Shen,
P. C. Eklund,
J. O. Sofo,
J. Zhu
Abstract:
We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of local…
▽ More
We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$Ω$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
△ Less
Submitted 1 May, 2010;
originally announced May 2010.
-
The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
Authors:
Ke Zou,
Xia Hong,
Derek Keefer,
Jun Zhu
Abstract:
We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-covered graphene reaches 20,000 cm^(2)/Vs at low temperature, which is the high…
▽ More
We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-covered graphene reaches 20,000 cm^(2)/Vs at low temperature, which is the highest among oxide-covered graphene and compares to that of pristine samples. The temperature-dependent resistivity exhibits the effect of ROP scattering from both the SiO2 substrate and the HfO2 over-layer. At room temperature, surface phonon modes of the HfO2 film centered at 54 meV dominate and limit the carrier mobility to ~20,000 cm^(2)/Vs. Our results highlight the important choice of oxide in graphene devices.
△ Less
Submitted 9 December, 2009; v1 submitted 7 December, 2009;
originally announced December 2009.
-
The quantum scattering time and its implications on scattering sources in graphene (Supplementary)
Authors:
X. Hong,
K. Zou,
J. Zhu
Abstract:
Supplementary Information Content:
1. Sample preparation;
2. Background subtraction of Shubnikov-de Haas (SdH) oscillations;
3. The effect of density inhomogeneity on the quantum scattering time tau_q;
4. Determine the concentration of charged impurity n_imp at a distance z;
5. Scattering from charges in the bulk of the SiO_2 substrate.
Supplementary Information Content:
1. Sample preparation;
2. Background subtraction of Shubnikov-de Haas (SdH) oscillations;
3. The effect of density inhomogeneity on the quantum scattering time tau_q;
4. Determine the concentration of charged impurity n_imp at a distance z;
5. Scattering from charges in the bulk of the SiO_2 substrate.
△ Less
Submitted 10 September, 2009;
originally announced September 2009.
-
The quantum scattering time and its implications on scattering sources in graphene
Authors:
X. Hong,
K. Zou,
J. Zhu
Abstract:
We determine the quantum scattering time tau_q in six graphene samples with mobility of 4,400 < mu < 17,000 cm^2/Vs over a wide range of carrier density (1.2 < n < 6x10^{12}/cm^2). tau_q derived from Shubnikov-de Haas oscillations ranges ~25-74 fs, corresponding to a single-particle level broadening of 4.5-13 meV. The ratio of the transport to quantum scattering time tau_t/tau_q spans 1.5-5.1 in…
▽ More
We determine the quantum scattering time tau_q in six graphene samples with mobility of 4,400 < mu < 17,000 cm^2/Vs over a wide range of carrier density (1.2 < n < 6x10^{12}/cm^2). tau_q derived from Shubnikov-de Haas oscillations ranges ~25-74 fs, corresponding to a single-particle level broadening of 4.5-13 meV. The ratio of the transport to quantum scattering time tau_t/tau_q spans 1.5-5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO_2 surface play a dominant role in limiting carrier mobility in current samples.
△ Less
Submitted 29 December, 2009; v1 submitted 8 September, 2009;
originally announced September 2009.
-
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
Authors:
X. Hong,
A. Posadas,
K. Zou,
C. H. Ahn,
J. Zhu
Abstract:
Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity…
▽ More
Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO_2-gated FLG.
△ Less
Submitted 29 October, 2008;
originally announced October 2008.
-
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
Authors:
X. Hong,
A. Posadas,
K. Zou,
C. H. Ahn,
J. Zhu
Abstract:
The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temper…
▽ More
The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8+/-0.5 eV.
△ Less
Submitted 24 October, 2008;
originally announced October 2008.
