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Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study
Authors:
Chun Yu Tammy Huang,
Fariborz Kargar,
Topojit Debnath,
Bishwajit Debnath,
Michael D. Valentin,
Ron Synowicki,
Stefan Schoeche,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affe…
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We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.
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Submitted 3 March, 2020;
originally announced March 2020.
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Small Angle and Non-Monotonic Behavior of the Thermal Conductivity in Twisted Bilayer Graphene
Authors:
Chenyang Li,
Roger K. Lake
Abstract:
Nothing is known about the thermal conductivity in twisted bilayer graphene (TBG) at small twist angles, and how it approaches its aligned value as the twist angle approaches 0 degrees. To provide insight into these questions, we perform large scale non-equilibrium molecular dynamics calculations on commensurate TBG structures with angles down to 1.87 degrees. The results show a smooth, non-monoto…
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Nothing is known about the thermal conductivity in twisted bilayer graphene (TBG) at small twist angles, and how it approaches its aligned value as the twist angle approaches 0 degrees. To provide insight into these questions, we perform large scale non-equilibrium molecular dynamics calculations on commensurate TBG structures with angles down to 1.87 degrees. The results show a smooth, non-monotonic behavior of the thermal conductivity with respect to the commensurate lattice constant. As the commensurate lattice constant increases, the thermal conductivity initially decreases by 50%, and then it returns to 90% of its aligned value as the angle is reduced to 1.89 degrees. These same qualitative trends are followed by the trends in the shear elastic constant, the wrinkling intensity, and the out-of-plane ZA2 phonon frequency. The picture that emerges of the physical mechanism governing the thermal conductivity is that misorientation reduces the shear elastic constant; the reduced shear elastic constant enables greater wrinkling; and the greater wrinkling reduces the thermal conductivity. The small-angle behavior of the thermal conductivity raises the question of how do response functions approach their aligned values as the twist angle approaches 0 degrees. Is the approach gradual, discontinuous, or a combination of the two?
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Submitted 16 November, 2019; v1 submitted 11 November, 2019;
originally announced November 2019.
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Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials
Authors:
Fariborz Kargar,
Ece Aytan,
Subhajit Ghosh,
Jonathan Lee,
Michael Gomez,
Yuhang Liu,
Andres Sanchez Magana,
Zahra Barani Beiranvand,
Bishwajit Debnath,
Richard Wilson,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are n…
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We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.
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Submitted 14 August, 2019;
originally announced August 2019.
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Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
Authors:
A. Geremew,
S. Rumyantsev,
F. Kargar,
B. Debnath,
A. Nosek,
M. Bloodgood,
M. Bockrath,
T. Salguero,
R. K. Lake,
A. A. Balandin
Abstract:
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco…
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We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.
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Submitted 14 March, 2019;
originally announced March 2019.
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Strain control of the Neel vector in Mn-based antiferromagnets
Authors:
In Jun Park,
Taehwan Lee,
Protik Das,
Bishwajit Debnath,
Greg P. Carman,
Roger K. Lake
Abstract:
Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amoun…
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Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amount of strain effectively rotates the direction of the Neel vector by 90 degrees for all of the materials. For MnIr, MnRh, MnNi, and MnPd, the Neel vector rotates within the basal plane. For MnPt, the Neel vector rotates from out-of-plane to in-plane under tensile strain. The effectiveness of strain control is quantified by a metric of efficiency and by direct calculation of the magnetostriction coefficients. The values of the magnetostriction coefficients are comparable with those from ferromagnetic materials. These results indicate that strain is a mechanism that can be exploited for control of the Neel vectors in this family of antiferromagnets.
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Submitted 1 March, 2019;
originally announced March 2019.
