ng 1 +2348036826053 ABSTRACT The Electroless deposition of the thin films of lead sulphide (PbS) was successfully conducted. Properties of the films which include the thickness, absorbance, transmittance, reflectance, band gap energy,... more
ng 1 +2348036826053 ABSTRACT The Electroless deposition of the thin films of lead sulphide (PbS) was successfully conducted. Properties of the films which include the thickness, absorbance, transmittance, reflectance, band gap energy, conductivity type and charge carrier mobility were studied using UV–visible spectra photometer model 6405, four point probe and hot probe, pH meter, and meter toledo (AB0084) electric beam balance with four decimal places. The study revealed the thickness of the film to be in the range 0.71µm–3.34µm, absorbance (0.02A – 1.105A), Transmittance in the range (0.9%-99%), reflectance in the range, (0.11%-98%) within wavelength of the radiations (400nm – 1000 nm),Where energy band gap in the range (1.6 eV – 2.70 eV), charge carrier mobility on average is 7803 cm 2 /Vs and the deposited thin film Lead Sulphide is a p-type semiconductor material.
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Solar cells of n-Cu 2 O/p-Cu 2 S were fabricated. The n-Cu 2 O layers were formed using Electroless chemical method which involved immersing of copper plates into 0.001M CuSO4 solution of pH 9.83, approximately. A uniform layer of n-Cu 2... more
Solar cells of n-Cu 2 O/p-Cu 2 S were fabricated. The n-Cu 2 O layers were formed using Electroless chemical method which involved immersing of copper plates into 0.001M CuSO4 solution of pH 9.83, approximately. A uniform layer of n-Cu 2 O was formed on the copper plates within 30 days in solution later some those samples were subjected to annealing treatment at various time and temperature. This treatment was aimed at optimizing the annealing time and temperature. The annealed and unannealed n-Cu 2 O samples were then immersed in 0.5M Na 2 S solution to form the p-Cu 2 S layer thereby creating the required n-Cu 2 O/p-Cu 2 S solar cell. Annealing treatment was also given to the n-Cu 2 O/p-Cu 2 S solar cell with annealed n-Cu 2 O layer, to ascertain the stage at which the annealing treatment can improve the performance of the cell better. The best results of open circuit voltage V oc = 60mV, short circuit current density, J sc = 87.12µAcm 2 and a fill factor, ff = 0.52 were obtained for annealing of n-Cu 2 O before and after sulphidation at temperature, T= 300 o Cand time, t = 15minutes and temperature, T = 250 o Cand time, t =15minutes, respectively. These results are higher than earlier reported experimental values for this solar cell.