"Design of novel 3T ternary DRAM with single word-line using CNTFET."

Zarin Tasnim Sandhie, Farid Uddin Ahmed, Masud H. Chowdhury (2022)

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DOI: 10.1016/J.MEJO.2022.105498

access: closed

type: Journal Article

metadata version: 2022-08-25

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Zarin Tasnim Sandhie, Farid Uddin Ahmed, Masud H. Chowdhury:
Design of novel 3T ternary DRAM with single word-line using CNTFET. Microelectron. J. 126: 105498 (2022)

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