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Threshold voltage modeling for a Gaussian-doped junctionless FinFET

Published: 01 March 2019 Publication History

Abstract

This work presents two-dimensional (2D) analytical modeling of the threshold voltage of a double-gate junctionless FinFET with a Gaussian-doped channel by evaluating the 2D electrostatic potential distribution across the active area of the device. The influence of the fringing field lines through the spacer is also included in the modeling. To confirm the validity of the derived analytical model, technology computer-aided design (TCAD) device simulations were carried out. Furthermore, the impact of various design parameters on the threshold voltage was also studied.

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  • (2020)The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFETJournal of Computational Electronics10.1007/s10825-020-01472-y19:2(613-621)Online publication date: 1-Jun-2020

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            Published In

            cover image Journal of Computational Electronics
            Journal of Computational Electronics  Volume 18, Issue 1
            Mar 2019
            373 pages

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            Springer-Verlag

            Berlin, Heidelberg

            Publication History

            Published: 01 March 2019

            Author Tags

            1. FinFET
            2. Gaussian channel
            3. Junctionless
            4. Modeling
            5. Nonuniform
            6. Poisson equation

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            • (2020)The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFETJournal of Computational Electronics10.1007/s10825-020-01472-y19:2(613-621)Online publication date: 1-Jun-2020

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