Journal of Computational Electronics

Earth-abundant quaternary chalcogenides are promising light-harvesting materials in the application of thin-film solar cells. In this work, the ternary cuprous vanadate Cu3VO4 and quaternary compounds Cu2LiVO4 are investigated by using first-principles ...

The macroscopic d.c. conductivity of organic materials is modeled by employing the Kubo---Greenwood integral. Both a constant diffusivity and a window or gate function diffusivity are considered. Complete analytical formulas devoid of any mathematical ...

The evaluation of the spin lifetime in an ultra-thin silicon film is a massive computational challenge because of the necessity of performing appropriate double integration of the strongly scattering momentum-dependent spin relaxation rates. We have ...

A threshold voltage model based on the solution of the three-dimensional (3-D) Poisson's equation for an undoped triple-gate (TG) fin-shaped field-effect transistor (FinFET) with localized interface trapped charge is presented in this paper. Such ...

A new compact model is introduced to determine the drain current of an experimental short-channel silicon-on-insulator (SOI) metal---oxide---semiconductor field-effect transistor (MOSFET) analytically. The effective physical parameters of the ...

To enhance their performance, various designs of carbon nanotube (CNT) interconnects were analyzed and compared with conventional copper interconnects. To ameliorate the propagation delay of very long interconnect lines, smart buffers are inserted as ...

A double-gate (DG) heterojunction tunnel FinFET structure with a source overlap region was analyzed to optimize its performance and validate technology computer-aided design (TCAD) simulation results by modeling the surface potential, electric field, ...

To achieve a steep subthreshold slope (SS) and a better $$I_\mathrm{ON}/I_\mathrm{OFF}$$ION/IOFF ratio is a major concern for switching applications in semiconductor devices. To overcome these issues, the tunnel field effect transistor (TFET) is a ...

This work presents two-dimensional (2D) analytical modeling of the threshold voltage of a double-gate junctionless FinFET with a Gaussian-doped channel by evaluating the 2D electrostatic potential distribution across the active area of the device. The ...

The three-gate (TG) silicon-on-insulator (SOI) metal---semiconductor field-effect transistor (MESFET) is proposed as an innovative type of device for use in high-density and high-speed applications. The new design is expected to exhibit excellent ...

The original version of this article unfortunately contained errors. The language edits made in the original version has not been incorporated in the published version.

A semianalytical model based on a nonlocal approach is proposed for an undoped tunnel field-effect transistor (TFET) with a vertical surrounding-gate structure. The heterostructure band alignment is computed by applying the affinity rule on suitable ...

Organic electronic devices frequently employ intrinsic semiconductors as active layer. The choice of different materials for the charge injecting and extracting interfaces gives rise to a finite contact potential. Injection of holes against the ...

A new model of a graphene---C60 composite is constructed to explore its electronic structure and field-emission characteristics. We investigate the structural stability, energy levels, local electron density distribution, work function, ionization ...

Using Bardeen's approach and orbital wave functions obtained by the algorithm of Herman and Skillman, we calculated interatomic matrix elements for tunnel interaction between the atoms from the set of B, C, N, Si, P, S, Ti, V, Se, Mo, Te and W, which ...

We investigate the impact of different substrates on the performance of a monolayer MoS2 field-effect transistor (FET) by calculating the interface charge density between the MoS2 layer and the substrate using first-principle calculations based on ...

The potential of vertical series-like InP transferred electron devices operating in the electron accumulation layer and multiple transit-time mode is investigated at 400 GHz by means of one-dimensional time-domain energy/momentum numerical modeling. The ...

Time-domain analysis of high-frequency field-effect transistors is presented using the meshfree radial point interpolation method. The distributed modeling approach is followed in the linear and nonlinear regimes. The corresponding matrix Telegrapher's ...

A design for a broadband single-layer dual-band reflectarray antenna is presented. A genetic algorithm is employed to design and optimize the element of the antenna. The basic idea to improve the bandwidth of the proposed antenna is based on increasing ...

Substrate integrated waveguide (SIW) technology makes it possible to realize an entire circuit including a transition, planar circuitry, waveguide components and devices in a single printed circuit board. In this paper, a new approach to design a ...

A new rigorous computation of a square microstrip patch antenna with dual square notches at the two corners of the diagonal using Galerkin's method in the spectral domain is presented; the dyadic Green's functions of the problem are well resolved by the ...

A T-shape patch antenna loaded with a rectangular slot and fed directly by a 50-Ω microstrip line was optimized using the IE3D simulation tool to improve its bandwidth at a frequency of 2.45 GHz by varying each of four parameters while keeping the other ...

A theoretical investigation is carried out using the perturbation method to calculate the resonant frequency of a horizontally and vertically perturbed rectangular dielectric resonator antenna (RDRA). The accuracy of the proposed method is validated ...

Through this paper, the effects of acoustic phonons on the noise performance of avalanche transit-time devices have been investigated and reported. For this study, a double-drift-region silicon-based impact avalanche transit-time diode has been ...

A microstrip patch antenna based on a synthesized photonic bandgap (PBG) substrate is designed and analyzed by using a technique based on the combination of an evolutionary heuristic optimization algorithm with the CST Microwave Studio simulator, which ...

We present a new approach to extract the parameters of photovoltaic modules. This method, called the synergetic control theory approach, relies on a first analytical calculation step followed by a numerical calculation step, achieving efficient ...

The linear and nonlinear intersubband optical absorption coefficients (OACs) of nonpolar AlGaN/GaN step quantum well structures (SQWs) were calculated theoretically for various geometrical structures, $$ \delta $$? doping schemes, and material ...

This paper presents a complete model for photovoltaic modules able to accurately predict the I–V characteristics at different levels of temperature and irradiance. The model greatly reduces the computational effort needed to extract the five ...

The performance of an all-optical OR gate using a dual pump---probe semiconductor optical amplifier (SOA)-assisted Mach---Zehnder interferometer (MZI) is investigated and demonstrated through numerical simulations at a data rate of 80 Gb/s. The proposed ...