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Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel DevicesApril 2003
Publisher:
  • John Wiley & Sons, Inc.
  • 605 Third Ave. New York, NY
  • United States
ISBN:978-3-527-40363-9
Published:01 April 2003
Pages:
1002
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Abstract

From the Publisher: Providing an introduction to electronic materials and device concepts for the major areas of current and future information technology, the value of this book lies in its focus on the underlying principles. Illustrated by contemporary examples, these basic principles will hold, despite the rapid developments in this field, especially emphasizing nanoelectronics. There is hardly any field where the links between basic science and application are tighter than in nanoelectronics & information technology. As an example, the design of resonant tunneling transistors, single electron devices or molecular electronic structures is simply inconceivable without delving deep into quantum mechanics. This textbook is primarily aimed at students of physics, electrical engineering and information technology, as well as material science in their 3rd year and higher. It is equally of interest to professionals wanting a broader overview of this hot topic.

Cited By

  1. Zonnevylle A, Heerkens C, Hagen C and Kruit P (2014). Multi-electron-beam deflector array, Microelectronic Engineering, 123:C, (140-148), Online publication date: 1-Jul-2014.
  2. Nowozin T, Bimberg D, Daqrouq K, Ajour M and Awedh M (2013). Materials for future quantum dot-based memories, Journal of Nanomaterials, 2013, (59-59), Online publication date: 1-Jan-2013.
  3. Droopad R, Contreras-Guerrero R, Veazey J, Qiao Q, Klie R and Levy J (2013). Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devices, Microelectronic Engineering, 109:C, (290-293), Online publication date: 1-Sep-2013.
  4. ACM
    Dingler A, Niemier M, Hu X and Lent E (2011). Performance and Energy Impact of Locally Controlled NML Circuits, ACM Journal on Emerging Technologies in Computing Systems (JETC), 7:1, (1-24), Online publication date: 1-Jan-2011.
  5. Geller M, Hopfer F and Bimberg D (2008). Nanostructures for nanoelectronics, Microelectronics Journal, 39:3-4, (302-306), Online publication date: 1-Mar-2008.
  6. Psuja P, Hreniak D and Strek W (2018). Rare-earth doped nanocrystalline phosphors for field emission displays, Journal of Nanomaterials, 2007:1, (1-7), Online publication date: 1-Jan-2007.
  7. Weerasekera R, Zheng L, Pamunuwa D and Tenhunen H Extending systems-on-chip to the third dimension Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design, (212-219)
  8. Beiu V, Ibrahim W and Lazarova-Molnar S What von Neumann did not say about multiplexing beyond gate failures Proceedings of the 9th international work conference on Artificial neural networks, (487-496)
  9. ACM
    Zhang R and Jha N Threshold/majority logic synthesis and concurrent error detection targeting nanoelectronic implementations Proceedings of the 16th ACM Great Lakes symposium on VLSI, (8-13)
  10. Meenderinck C and Cotofana S High-radix addition and multiplication in the electron counting paradigm using single electron tunneling technology Proceedings of the 6th international conference on Embedded Computer Systems: architectures, Modeling, and Simulation, (447-456)
  11. Venkataratnam A and Goel A (2006). Design and simulation of logic gates using single electron transistors at room temperature, International Journal of Computational Science and Engineering, 2:3/4, (179-188), Online publication date: 1-Jun-2006.
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  1. Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices

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