Variability modeling and variability-aware design in deep submicron integrated circuits
Abstract
- Variability modeling and variability-aware design in deep submicron integrated circuits
Recommendations
Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization
ICCAD '09: Proceedings of the 2009 International Conference on Computer-Aided DesignFinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, however, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical ...
Fin shape dependent variability for strained SOI FinFETs
In this paper, for the first time impact of fin shape variation on 22-nm technology node strained silicon-on-insulator (SSOI) n-FinFET has been examined. With 3D-TCAD simulator, the electrical characteristics are analyzed and compared for devices with ...
Random variability modeling and its impact on scaled CMOS circuits
Random variations have been regarded as one of the major barriers on CMOS scaling. Compact models that physically capture these effects are crucial to bridge the process technology with design optimization. In this paper, 3-D atomistic simulations are ...
Comments
Information & Contributors
Information
Published In
Sponsors
Publisher
Association for Computing Machinery
New York, NY, United States
Publication History
Check for updates
Qualifiers
- Article
Conference
Acceptance Rates
Contributors
Other Metrics
Bibliometrics & Citations
Bibliometrics
Article Metrics
- 0Total Citations
- 250Total Downloads
- Downloads (Last 12 months)0
- Downloads (Last 6 weeks)0
Other Metrics
Citations
View Options
Login options
Check if you have access through your login credentials or your institution to get full access on this article.
Sign in