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IMFlexCom: Energy Efficient In-Memory Flexible Computing Using Dual-Mode SOT-MRAM

Authors:

Farhana Parveen,

Shaahin Angizi,

Deliang FanAuthors Info & Claims

ACM Journal on Emerging Technologies in Computing Systems (JETC), Volume 14, Issue 3

Article No.: 35, Pages 1 - 18

https://doi.org/10.1145/3223047

Published: 23 October 2018 Publication History

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Abstract

In this article, we propose an <u>I</u>n-<u>M</u>emory <u>Flex</u>ible <u>Com</u>puting platform (IMFlexCom) using a novel Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array architecture, which could work in dual mode: memory mode and computing mode. Such intrinsic in-memory logic (AND/OR/XOR) could be used to process data within memory to greatly reduce power-hungry and long distance massive data communication in conventional Von Neumann computing systems. A comprehensive reliability analysis is performed, which confirms ∼90mV and ∼10mV (worst-case) sense margin for memory and in-memory logic operation in variations on resistance-area product and tunnel magnetoresistance. We further show that sense margin for in-memory logic computation can be significantly increased by increasing the oxide thickness. Furthermore, we employ bulk bitwise vector operation and data encryption engine as case studies to investigate the performance of our proposed design. IMFlexCom shows ∼35× energy saving and ∼18× speedup for bulk bitwise in-memory vector AND/OR operation compared to DRAM-based in-memory logic. Again, IMFlexCom can achieve 77.27% and 85.4% lower energy consumption compared to CMOS-ASIC- and CMOL-based Advanced Encryption Standard (AES) implementations, respectively. It offers almost similar energy consumption as recent DW-AES implementation with 66.7% less area overhead.

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Cited By

Ammoura LFlottes MGirard PNoel JVirazel A(2023)Analysis of resistive defects on a foundry 8T SRAM-based IMC architectureMicroelectronics Reliability10.1016/j.microrel.2023.115029147(115029)Online publication date: Aug-2023
https://doi.org/10.1016/j.microrel.2023.115029
Jamshidi VPatooghy AFazeli M(2022)MagCiM: A Flexible and Non-Volatile Computing-in-Memory Processor for Energy-Efficient Logic ComputationIEEE Access10.1109/ACCESS.2022.315996710(35445-35459)Online publication date: 2022
https://doi.org/10.1109/ACCESS.2022.3159967
Ammoura LFlottes MGirard PVirazel A(2021)Preliminary Defect Analysis of 8T SRAM Cells for In-Memory Computing Architectures2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)10.1109/DTIS53253.2021.9505101(1-4)Online publication date: 28-Jun-2021
https://doi.org/10.1109/DTIS53253.2021.9505101
Show More Cited By

Index Terms

IMFlexCom: Energy Efficient In-Memory Flexible Computing Using Dual-Mode SOT-MRAM
1. Computer systems organization
  1. Architectures
    1. Other architectures
      1. Reconfigurable computing
2. Hardware
  1. Emerging technologies
    1. Memory and dense storage
    2. Spintronics and magnetic technologies

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Published In

cover image ACM Journal on Emerging Technologies in Computing Systems

ACM Journal on Emerging Technologies in Computing Systems Volume 14, Issue 3

July 2018

150 pages

ISSN:1550-4832

EISSN:1550-4840

DOI:10.1145/3287773

Editor:
Yuan Xie
University of California, Santa Barbara, USA

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Copyright © 2018 ACM.

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Publication History

Published: 23 October 2018

Accepted: 01 May 2018

Revised: 01 May 2018

Received: 01 July 2017

Published in JETC Volume 14, Issue 3

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Cited By

Ammoura LFlottes MGirard PNoel JVirazel A(2023)Analysis of resistive defects on a foundry 8T SRAM-based IMC architectureMicroelectronics Reliability10.1016/j.microrel.2023.115029147(115029)Online publication date: Aug-2023
https://doi.org/10.1016/j.microrel.2023.115029
Jamshidi VPatooghy AFazeli M(2022)MagCiM: A Flexible and Non-Volatile Computing-in-Memory Processor for Energy-Efficient Logic ComputationIEEE Access10.1109/ACCESS.2022.315996710(35445-35459)Online publication date: 2022
https://doi.org/10.1109/ACCESS.2022.3159967
Ammoura LFlottes MGirard PVirazel A(2021)Preliminary Defect Analysis of 8T SRAM Cells for In-Memory Computing Architectures2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)10.1109/DTIS53253.2021.9505101(1-4)Online publication date: 28-Jun-2021
https://doi.org/10.1109/DTIS53253.2021.9505101
Angizi SHe ZAwad AFan D(2020)MRIMA: An MRAM-Based In-Memory AcceleratorIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2019.290788639:5(1123-1136)Online publication date: May-2020
https://doi.org/10.1109/TCAD.2019.2907886
Chang LWang ZZhang YZhao W(2019)Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line SwitchingIEEE Access10.1109/ACCESS.2019.29339027(110463-110471)Online publication date: 2019
https://doi.org/10.1109/ACCESS.2019.2933902

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