- I have graduated from the discipline of metallurgy engineering and materials science from the Indian Institute of Tec... moreI have graduated from the discipline of metallurgy engineering and materials science from the Indian Institute of Technology Indore, India. My research focuses on the growth, materials, and physics of semiconductors for optoelectronic and energy storage applications. I have rich experience in material characterization techniques such as X-ray powder diffraction, Raman Spectroscopy, UV- vis spectroscopy, Photoluminescence spectroscopy, Electron paramagnetic resonance spectroscopy, Two-probe resistivity, Cyclic Voltammetry, and Electrochemical Impedance spectroscopy. I am the recipient of several prestigious awards including, the University Gold Medal (M.Tech) and the Maulana Azad National Fellowship.edit
Research Interests:
Research Interests:
Research Interests:
Single phase, sol–gel prepared Cu 1 –x Fe x O (0 ≤ x ≤ 0.125) powders are characterized in terms of structural, electronic and magnetic properties. Using dielectric and magnetic studies we investigate the coupling of electron and spin.... more
Single phase, sol–gel prepared Cu 1 –x Fe x O (0 ≤ x ≤ 0.125) powders are characterized in terms of structural, electronic and magnetic properties. Using dielectric and magnetic studies we investigate the coupling of electron and spin. The electrical conductivities and activation energies are studied with increasing Fe content. Modelling of experimental conductivity data emphasizes a single hopping mechanism for all samples except x = 0.125, which have two activation energies. Hole doping is confirmed by confirming a majority Fe 3+ substitution of Cu 2+ in CuO from X-ray photoelectron spectroscopy studies (XPS). Such a substitution results in stabilized ferromagnetism. Fe substitution introduces variation in coercivity as an intrinsic magnetic property in Fe-doped CuO, and not as a secondary impurity phase.
Research Interests:
ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing... more
ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing speed. The conductance increases as a consequence of reduced defect states, especially the oxygen vacancies. The photocurrent increases with Galium incorporation, but a more intense increase in the current reduces the sensitivity.
Research Interests:
The potential of polycrystalline Al-doped ZnO nanoparticles as an active material for UV photodetectors has been investigated. The Rietveld refinement of powder X-ray diffraction data revealed a single hexagonal phase of the... more
The potential of polycrystalline Al-doped ZnO nanoparticles as an active material for UV photodetectors has been investigated. The Rietveld refinement of powder X-ray diffraction data revealed a single hexagonal phase of the nanoparticles. A slight deviation in the lattice cell constants from pristine ZnO was observed, associated with defect creation and strain generated due to Al3+ substitution. High-resolution transmission electron microscopy image reveals a spherical morphology of both the doped and undoped ZnO nanoparticles. Stacking faults observed in the Al-doped samples is an indication of a proper Al-doping and is a signature of high density of crystal defects. The bandgap was found to reduce due to the delocalization of impurity energy states as a result of Al3+ substitution. Consequently, conductivity was improved in doped samples. Photoluminescence spectroscopy revealed a strong dependence of the emissions from defect sites on dopant content. Further, a correlation of the...
Research Interests:
Research Interests:
ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing... more
ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing speed. The conductance increases as a consequence of reduced defect states, especially the oxygen vacancies. The photocurrent increases with Galium incorporation, but a more intense increase in the current reduces the sensitivity.
Research Interests:
One-dimensional Zn1−xNixO nanorods were synthesized via a low-temperature hydrothermal route. The crystallographic analysis evidenced the successful incorporation of Ni2+ ions into the ZnO lattice with the wurtzite phase. FESEM images... more
One-dimensional Zn1−xNixO nanorods were synthesized via a low-temperature hydrothermal route. The crystallographic analysis evidenced the successful incorporation of Ni2+ ions into the ZnO lattice with the wurtzite phase. FESEM images show rod-shaped morphology for all samples. Optical studies confirm the increasing concentration of defect states in the material. The synthesized samples were also used as electrode materials to examine their supercapacitive behavior. The electrochemical studies revealed improved electrochemical performance with an excellent specific capacitance of 273 F/g for × = 0.06 sample.
Research Interests:
Research Interests:
Research Interests:
Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical... more
Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the polycrystalline nature of the films. The microstructural parameters were evaluated. The band gap of the films