ABSTRACT Future system-on-panel applications require further performance improvement of circuits based on polycrystalline silicon thin film transistors (TFTs). The biggest leverage in circuit performance can be obtained by reducing... more
ABSTRACT Future system-on-panel applications require further performance improvement of circuits based on polycrystalline silicon thin film transistors (TFTs). The biggest leverage in circuit performance can be obtained by reducing channel length from the typical current values of 3-6 mu m to 1 mu m, or less. Therefore, short channel effects in scaled down polysilicon TFTs will have to be controlled in order to allow proper operation of the circuits. In this work we review a number of specific aspects of the electrical characteristics of short channel devices (channel lengths down to 0.4 mu m) combining electrical characteristics measurements and two-dimensional numerical simulations.
Applications of polycrystalline silicon (polysilicon) thin film transistors (TFTs) to active matrix organic light emitting displays require further performance improvement. The biggest leverage in circuit performance can be obtained by... more
Applications of polycrystalline silicon (polysilicon) thin film transistors (TFTs) to active matrix organic light emitting displays require further performance improvement. The biggest leverage in circuit performance can be obtained by reducing channel length from the ...
