Novel quaternary CuNiSbS chalcogenide material has been successfully prepared using a simple co-precipitation method using a mixture of solutions of the constituent elements in a chemical formula. The structure and morphological... more
Novel quaternary CuNiSbS chalcogenide material has been successfully prepared using a simple co-precipitation method using a mixture of solutions of the constituent elements in a chemical formula. The structure and morphological characterizations of the prepared material in powder form were performed via X-ray diffraction, a High-resolution transmission electron microscope (HRTEM), and a Scanning electron microscope (SEM).FTIR and diffuse reflectance spectrum of the prepared material were conducted to provide valuable information about the main absorption bands besides the energy optical band gap of the material. AC conductivity and the dielectric properties of the prepared material using broad band dielectric spectroscopy (BDS) besides a magnetic analysis via a vibrating sample magnetometer (VSM) were also investigated.
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In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO2/Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as... more
In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO2/Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as a tunneling diode; demonstrated from I–V measurement and negative resistance. The structure and its characterization were examined by scanning electron microscope, XRD diffraction, C-V and I–V measurements. We studied the temperature, voltage dependence of dielectric and electrical parameters of the fabricated Mn/SiO2/P-Si MOS device. I–V measurements for this structure display diode tunnel behavior with negative resistance. Parameters such as series resistance (Rs), permittivity (ε′), dielectric loss (ε″), a tangent of the dielectric loss factor (tan δ), real and imaginary parts of electrical modulus (M′ and M″) and ac conductivity were examined in a temperature range of 303–393 K and frequency range (10 Hz–20 MHz) under 1 Vrms applied voltage alo...
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In this work, nanocomposites were prepared with different weight ratios based on the formula 1 − x ZnO + x Fe 3 O 4 , where x = 0.01, 0.03, 0.05, 0.07 and 0.09. The structure, morphology, optical, and magnetic properties were examined by... more
In this work, nanocomposites were prepared with different weight ratios based on the formula 1 − x ZnO + x Fe 3 O 4 , where x = 0.01, 0.03, 0.05, 0.07 and 0.09. The structure, morphology, optical, and magnetic properties were examined by x-ray diffraction, UV–vis-NIR diffuse reflectance spectroscopy, high-resolution transmission electron microscopy (HRTEM), and vibrating sample magnetometer (VSM). The x-ray diffraction (XRD) results confirm the phase purity formation of Fe 3 O 4 − ZnO nanocomposites. The transmission electron microscopy (TEM) exhibited the prepared powders are nanoparticles with the spherical shapes of Fe 3 O 4 and nanorod for ZnO. UV–vis-NIR diffuse reflectance measurements showed that the Fe 3 O 4 modified the optical properties of ZnO. Results of the vibrating sample magnetometer (VSM) display a superparamagnetic characteristic of Fe 3 O 4 and ferromagnetic behavior for nanocomposites. The magnetization and remanence magnetization of nanocomposites increases with...