Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties of these... more
Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties of these junctions were investigated. Special features of stimulated diffusion of P and B in surface layers of Si under pulsed photon annealing were revealed. The obtained results are discussed in terms of kick-out, pair vacancy-interstitial, and dissociative diffusion mechanisms. The features of the dopant concentration profiles are explained in terms of the vacancy-interstitial mechanism and the stimulated diffusion model with allowance made for the time dependence of the dopant surface concentration and the concentration dependence of the diffusivity.
In our report we demonstrated the advantage of the rapid photothermal processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature processing, high... more
In our report we demonstrated the advantage of the rapid photothermal processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature processing, high heating-cooling rates. The n+ -p-Si junctions were obtained from electrochemical deposited P source by rapid photothermal processing enhanced diffusion for 16 s at 900 degC and 1000
Publication Date: 2006
Publication Name: 2006 International Semiconductor Conference
For development of individual ZnO microwire in hydrogen sensors an environmentally benign synthesis process and fabrication route are required. Here we report a synthesis route for ZnO microwires using vapour phase process. Furthermore,... more
For development of individual ZnO microwire in hydrogen sensors an environmentally benign synthesis process and fabrication route are required. Here we report a synthesis route for ZnO microwires using vapour phase process. Furthermore, our synthesis technique permits microwires to be transferred to other substrates. This offers the possibility of using focused ion beam instrument for handling. We fabricated a single microwire-based sensor and found ~4% sensitive hydrogen 200 ppm in the air at room temperature.
Publication Date: 2009
Publication Name: 2009 International Semiconductor Conference
