Int. J. Nanoparticles, Vol. 10, Nos. 1/2, 2018
Variation of optical bandwidth in defected ternary
photonic crystal under different polarisation
conditions
Arpan Deyasi*
Department of Electronics and Communication Engineering,
RCC Institute of Information Technology,
Kolkata-700015, India
Email: deyasi_arpan@yahoo.co.in
*Corresponding author
A. Sarkar
Department of Electronics and Communication Engineering,
KGEC,
Nadia-741235, India
Email: iccse16@gmail.com
Abstract: Photonic bandwidth of defected one-dimensional ternary photonic
crystal is analytically calculated under both types of oblique incidences. Both P
and S type polarised incidences on the structure are considered in order to
compute transmittivity of the proposed Butterworth type bandpass filter, and
passband spectrum is kept at 1,550 nm by suitably choosing structural
parameters and defect density. Defect is kept within feasible limit, and ripple in
the desired passband region is tailored by its controlled variation. Width of
passband as function of defect density, angle of incidence and dimension of
constituent layers is computed, and critical dimension for the sandwiched layer
is predicted over which the structure will behave as equivalent binary one. For
closely-spaced signal transmission, this narrow bandpass filter will work as
excellent candidate to improve SNR.
Keywords: optical bandwidth; transmittivity; polarised condition; defect
density; ternary crystal; ripple factor.
Reference to this paper should be made as follows: Deyasi, A. and
Sarkar, A. (2018) ‘Variation of optical bandwidth in defected ternary photonic
crystal under different polarisation conditions’, Int. J. Nanoparticles, Vol. 10,
Nos. 1/2, pp.27–34.
Biographical notes: Arpan Deyasi is currently working as an Assistant
Professor in the Department of ECE in RCCIIT, Kolkata, INDIA. He has
12 years of professional experience in academics and industry. He received
BSc (Hons), BTech, and MTech from the University of Calcutta. He is working
in the area of semiconductor nanostructure and semiconductor photonics.
He has published more than 100 research papers in peer-reviewed journals
and conferences. His major teaching subjects are solid state device,
electromagnetics and photonics. He is a member of IEEE Electron Device
Society, IE(I), Optical Society of India, IETE, ISTE, etc.
Copyright © 2018 Inderscience Enterprises Ltd.
27
28
A. Deyasi and A. Sarkar
A. Sarkar is currently serving as an Associate Professor of the ECE Department
in KGEC, West Bengal. He had earlier served JGEC as a Lecturer of ECE
Department for ten years. He received his MTech in VLSI and
Microelectronics from Jadavpur University. He completed his PhD from
Jadavpur University in 2013. His current research interest span around study of
short channel effects of sub 100 nm MOSFETs and nano device modelling. He
is a senior member of IEEE and Executive Committee member of Electron
Device Society, Kolkata Section. He has authored five books, three contributed
book chapters, 52 peer-reviewed journals and 21 conference papers.
This paper is a revised and expanded version of a paper entitled ‘Narrow
bandpass optical filter design with defected ternary photonic crystal under
p-polarized incidence’ presented at 2017 Devices for Integrated Circuit
(DevIC), Kalyani, 23–24 March 2017.
1
Introduction
Multilayered optical structure which can effectively control the electromagnetic wave
propagation is termed as photonic crystal, thanks to the theoretical work of Loudon
(1970) two decades ago, followed by verification and physical implementation by
Yablonovitch (1987). The restriction of propagation of light in certain spectrum and
permission in other frequency ranges is owing to the formation of electromagnetic
bandgap (Fogel et al., 1998), and this novel property tailors the behaviour of the structure
as photonic filter (Mao et al., 2008). Photonic bandgap is originated due to the difference
of refractive indices of the constituent materials and dimensions of the layers inside the
periodic organisation (Maity et al., 2013), and its optical filter property can easily be
derived once transmittivity is computed as a function of incident wavelength spectrum
(Limpert et al., 2004; Xu and Shi, 2010). As a result, the structure behaves like bandpass
filter (Biswas and Deyasi, 2015; D’Orazio et al., 2003; Chen et al., 1996). This optical
device is already used to construct optical transmitter (Altug and Vučković, 2005), sensor
(Liu and Salemink, 2012), receiver (Reininger et al., 2012), fiber (Belhadj et al., 2006),
waveguide (Andreani et al., 2003), and also used for communication applications (Liu
and Fan, 2013; Shinya et al., 2005).
Work on effect of polarised incidence and magnitude of incident angles (Winn et al.,
1998) is carried out a decade ago on one-dimensional photonic crystal. Dispersion
property (Khanikaev and Steel, 2009) of magnetic photonic crystal (TPhC) is calculated a
few years ago for optical confinement. Transmission spectrum of fractal photonic crystal
(Xu et al., 2010) is investigated for optical waveguiding. Sawtooth profiles for refractive
indices (Morozov et al., 2013) of the materials are recently considered by theoretical
workers for exact analytical solution for transmittivity. Nonreciprocal effect inside
ternary magnetised plasma photonic crystals for propagating waves is calculated by
Ardakani (2014). Wanga et al. (2014) made some fundamental studies on ternary
structure, and OLED is constructed (Pradana and Gerken, 2015). Optimisation approach
for filter design (Hassan et al., 2015) is recently available in literature, and reflectance of
TPhC is obtained for metal-dielectric interface (Pandey et al., 2016).
In the present paper, transmittivity and bandwidth of ternary photonic crystal is
calculated for oblique incidences (both s-polarised and p-polarised) in presence of point
Variation of optical bandwidth in defected ternary photonic crystal
29
defects inside the structure. SiO2/air/TiO2 structure is considered for simulation purpose,
as it is practically possible to fabricate for the purpose of optical device. If defect density
is within tolerable limit, then narrow bandpass filter is generated, and variation of
bandwidth is also reported for different structural parameters. Results show that
intentional introduction of defect is very key for design of the device with required
Butterworth characteristics.
2
Mathematical modelling
Computation of reflectivities can be made for a two layer system under oblique incidence
as
r21 P =
n1 cos θ2 − n2 cos θ1
n1 cos θ2 + n2 cos θ1
(1)
r21 S =
n1 cos θ1 − n2 cos θ2
n1 cos θ1 + n2 cos θ2
(2)
Assuming the phase of the propagating e.m wave as constant, propagation matrix is given
by
⎛ exp [ jkm, n d m, n ]
⎞
0
Pm, n = ⎜
⎟
−
0
exp
jk
d
[ m,n m,n ] ⎠
⎝
(3)
where dm.n is the dimension of mth/nth layer, km,n is the propagation vector.
We consider ‘f’ is normalised defect density. Propagation matrix in presence of point
defect is obtained as
⎛ exp [ jkm , n d m , n ] f
Pm , n = ⎜
0
⎝
⎞
⎟
− exp [ jkm , n d m , n ] f ⎠
0
(4)
Transfer matrix for the elementary cell in presence of defect in first layer and third layer
M defect = M T 1defect P1 M T 2 P2 M T 3 P3defect
(5)
whereas in absence of defect,
M defect = M T 1 P1M T 2 P2 M T 3 P3
(6)
‘M’ is the transfer matrix between the adjacent layers, given by
1⎛ 1
M T m, n = ⎜
t ⎝ rm,n
rm, n ⎞
⎟
1 ⎠
(7)
Considering ‘N’ no. of elementary cells, transfer matrix for the system is given by
M tot = M defect N
From equation (8), value of M11 can be substituted to calculate transmittivity as
(8)
A. Deyasi and A. Sarkar
30
T=
3
1
(9)
M 112 (tot )
Results and discussions
Using equation (1), transmittivity is calculated as a function of wavelength keeping the
central wavelength of passband at 1.55 µm. Structural parameters and incidence angle are
chosen in such a way that ripple can be minimised at passband. Simulation is carried out
for both types of polarisations in presence of point defect.
Figure 1
Transmittivity profile with wavelength for different angle of incidence with
(a) 2% defect density for s-polarised incident wave (b) 4% defect density for
s-polarised incident wave
(a)
(b)
Bandwidth is calculated from the knowledge of transmission coefficient at passband for
different polarisation angles and also for different defect densities. It is calculated as the
difference of the adjacent notches around the central passband in wavelength scale.
Figure 1 shows the transmittivity profile for different incidence angles with different
defect densities when TM mode propagation is considered. In Figure 1(a), result is
obtained for 2% value, whereas in Figure 1(b), it is calculated for 4% defect. It is
observed that notch length for different incidence angles are asymmetric on either side of
passband. From the plot, it is observed that with increasing angle of incidence, blueshift
is observed in passband. Again, the notch length initially reduces with increasing angle
which detoriated filter quality; but at very high angle, filter performance is improved in
terms of restriction of noise signal. Similar variation is observed for 4% defect states, as
shown in Figure 1(b). This variation suggests the higher incidence angles are preferred
for practical application.
But comparative study reveals the fact that with intentional introduction of higher
defect density, filter performance is improved, which can be measured with increment of
notch length in either side of desired passband. Therefore, it may be concluded that for
s-polarised wave incidence, higher defect density within tolerable limit may be
considered advantageous for optical filter design.
Variation of optical bandwidth in defected ternary photonic crystal
31
Figure 2 depicts the transmittivity profile for 2% defect density for different angle of
incidence under TE mode propagation. It has been observed from the plot that with
minute change of incidence angle, length of guardband varies, but the rejection
probability of noise is better than that obtained under s-polarised condition. In this case,
with increasing angle, red shift is observed for passband. But one point may be noted in
this context that notch length in either side becomes asymmetric with increasing angle,
i.e., filter performance is degraded. Also the amount of ripple is passband is higher than
that obtained in Figure 1(a). Hence a trade-off is required.
Figure 2
Transmittivity profile with wavelength for different angle of incidence with 2% defect
density for p-polarised incidence wave
Figure 3
Bandwidth variation with (a) SiO2 layer width for p-polarised incidence with different
incident angle (b) TiO2 layer width for s-polarised incidence with different incident
angle
(a)
(b)
A. Deyasi and A. Sarkar
32
Figure 3 exhibits the variation of bandwidth for constituent layer widths under different
polarisation conditions. Figure 3(a) shows it for p-polarisation condition for different
angle of incidences when SiO2 layer dimension is varied; whereas in Figure 3(b), it is
depicted for s-polarisation condition under TiO2 layer width modulation. For both the
cases, results are compared with that obtained in case of normal incidence. It is noted that
for both the cases, result is obtained for 3% defect states. In both the cases, it is observed
that bandwidth monotonically decreases with increasing dimension. Comparative study
reveals that that the difference of bandwidths for different incident angles can clearly be
distinguished in case of SiO2 layer width variation than that of TiO2.
Figure 4
Bandwidth variation with (a) SiO2 layer width for 10º angle of incidence with different
defect densities for p-polarisation (b) TiO2 layer width for 10º angle of incidence with
different defect densities for p-polarisation (see online version for colours)
(a)
(b)
Figure 4 shows the variation of bandwidth for different defect densities under
p-polarisation condition. In Figure 4(a), it is noted down that for 1.5 µm thickness of
SiO2 layer, defect density lines for 3% and 4% makes a crossover. This suggests that
higher defect density in ternary photonic crystal does not always reflect poor quality
propagation. That’s why bandwidth is reduced with increasing defect density when
dimension of the layer becomes higher than the critical value. But before the critical
dimension, 4% defect gives higher bandwidth than the 3% defected structure which
clearly makes importance and speaks in favour of intentional introduction of defects in
the ternary PhC’s. In Figure 4(b), bandwidth is plotted by varying TiO2 layer width. It is
seen from the graph that bandwidth rapidly decreases with increase of layer width, and
the rate is modified with change of defect density. But the rate of reduction is decreased
once the layer width becomes wider.
4
Conclusions
Photonic bandpass filter is designed for optical communication with central wavelength
of passband at 1,550 nm in such a way that minimum ripples is obtained in the desired
spectrum. This is achieved by suitably choosing the constituent layer dimensions, i.e.,
length of the layers along the direction of wave propagation. Point defects are considered
Variation of optical bandwidth in defected ternary photonic crystal
33
in the otherwise perfect layers to make the results more realistic, as it is hardly possible to
fabricate optical device with pure materials without any defect at the time of fabrication.
Bandwidth variations are reported as a function of material widths and defect densities,
which is very important for practically realisable filters as it gives the prediction for filter
performance. Simulation work with consideration of defects is justified with the obtained
result that bandwidth reduces with increasing defect, and hence accurate computation is
required prior to fabrication. Findings help to conclude that appropriate defect
incorporation provides better outcome than the ideal structure. It may be finally
commented that depending on the simulation result, filter design is possible as per
requirement, i.e., bandwidth and ripple in passband.
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