Nanoscale Res Lett (2010) 5:454–463
DOI 10.1007/s11671-010-9543-z
SPECIAL ISSUE ARTICLE
Nanofabrication with Pulsed Lasers
A. V. Kabashin • Ph. Delaporte • A. Pereira •
D. Grojo • R. Torres • Th. Sarnet • M. Sentis
Received: 17 November 2009 / Accepted: 16 January 2010 / Published online: 24 February 2010
Ó The Author(s) 2010. This article is published with open access at Springerlink.com
Abstract An overview of pulsed laser-assisted methods
for nanofabrication, which are currently developed in our
Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by
laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of
direct laser ablation or laser plasma-assisted treatment of
semiconductors to form light-absorbing and light-emitting
nano-architectures, as well as periodic nanoarrays, or laserassisted production of nanoclusters and their controlled
growth in gaseous or liquid medium to form nanostructured
films or colloidal nanoparticles. Nanomaterials synthesized
by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of
importance for photovoltaics, optoelectronics, biological
sensing, imaging and therapeutics.
Keywords Laser nanofabrication Laser ablation
Semiconductor and plasmonic nanostructures
Colloidal nanoparticles
A. V. Kabashin (&) Ph. Delaporte A. Pereira D. Grojo
R. Torres Th. Sarnet M. Sentis
Lasers, Plasmas et Procédés Photoniques (LP3, UMR 6182
CNRS), Université de la Méditerranée, Campus de Luminy-case
917, 13288 Marseille Cedex 9, France
e-mail: kabashin@lp3.univ-mrs.fr
Present Address:
A. Pereira
Laboratoire de Physico-Chimie des Matériaux Luminescents,
LPCML (UMR 5620 CNRS), Domaine Scientifique de la Doua,
Université Claude Bernard Lyon 1, 10 rue Ada Byron,
69622 Villeurbanne, France
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Introduction
When nanostructured, many materials start to exhibit new
optical properties making them unique for a plethora of
applications. In particular, despite small and indirect band
gaps in the bulk state, the nanostructured IV group semiconductors (e.g. Si, Ge) become efficient size-dependent
emitters in the visible light range [1, 2], but also can work as
photosensitizers to generate singlet oxygen under photoexcitation [3, 4]. Another prominent example relates to noble
metal nanostructures, which provide a number of unique
plasmonic effects, including size-dependent absorption
peaks [5, 6], drastic local electric field enhancement [7, 8],
resolution beyond the diffraction limit [9], nanotrapping
[10] etc. These new properties of emerging nanomaterials
appear to be extremely promising for photovoltaics and
optoelectronics, as well as for biological sensing, imaging
and therapeutics.
The employment of pulsed lasers offers a novel unique
tool for nanofabrication [11]. When focused on the surface
of a solid target, pulsed laser radiation causes a variety of
effects, including heating, melting and finally ablation of
the target and such processes can lead to an efficient
material nanostructuring, as shown in Fig. 1. First, the
laser-assisted removal of material from the irradiated spot
can result in a spontaneous formation of variety of periodic
micro- and nanoarchitectures within this spot [12–16].
Second, laser ablation of material from a solid target leads
to the production of nanoclusters [17–20]. When produced
in gaseous environment or in vacuum, these nanoclusters
can then be deposited on a substrate yielding to the formation of a nanostructured film [17, 21–24]. When produced in liquid environment, the nanoclusters can be
released into the liquid forming a colloidal nanoparticle
solution [25–32]. In all cases, properties of formed
Nanoscale Res Lett (2010) 5:454–463
455
pulse itself. In contrast, pico- and femtosecond lasers offer
short ablation regimes, in which moments of radiation
absorption and material ablation are temporally separated.
Although multi-pulse laser ablation from the target surface
is always accompanied by the formation of micro- and
nanoscale features and periodic structures [12–16, 34],
properties of these features strongly depend on the wavelength and pulse length. Therefore, depending on the task,
one can select appropriate radiation parameters to condition the ablation regime and obtain prescribed properties of
laser-synthesized nanostructures. Below, we give several
examples of laser-assisted methodologies to fabricate
nanostructures within the irradiation spot.
Fig. 1 Schematics
nanostructuring
of
laser–target
interaction
and
material
nanostructures can be unique and not reproducible by any
other route [27–33]. As an example, the fabrication of
nanoparticles in aqueous solutions does not require any
chemical reducing agent, which conditions unique surface
chemistry and purity of produced nanomaterials [28, 29].
Furthermore, when synthesized in clean, biocompatible
environment, laser-synthesized nanomaterials are exempt
of any residual toxicity that is typical for chemically synthesized nanoparticles [32, 33].
In this paper, we review laser-assisted technologies,
developed by LP3 members, which are now available in
our Institute.
Laser-assisted Nanostructuring of Surfaces
Properties of laser-materials interaction are known to be
strongly dependent on parameters of laser radiation.
Among these parameters, the wavelength and pulse length
are especially important to determine the efficiency of
radiation absorption, dynamics of plasma plume expansion
and nanoclustering [11]. Ultraviolet, visible and nearinfrared lasers are normally considered as most adequate
for laser ablative tasks. Indeed, most industrially important
materials efficiently absorb laser radiation in the spectral
range of 200–1,000 nm, yielding to material ablation and
nanostructuring. In addition, radiation of UV and visible
lasers is relatively transparent to laser plasma, which
minimizes laser beam distortions and power losses before
reaching the target. In contrast, the interaction of infrared
radiation (1–11 lm) with materials is characterized by a
strong energy absorption by plasma itself, which completely changes conditions of nanostructuring. The pulse
length is another important parameter in laser–matter
interaction. Micro- and nanosecond laser–matter interactions are typically associated with long ablation regime, in
which the ablation process takes place during the laser
Femtosecond Laser Ablation of Si: Formation of Black
Si for Photovoltaics Applications
It is accepted that femtosecond pulses give at least two
major advantages to micromachining compared to nanosecond and longer pulses [35, 36]: (1) the reduction of the
pulse energy which is necessary to induce ablation for fixed
laser wavelength and focussing conditions and (2) a significant reduction or complete removal of heat-affected
zone (HAZ) and, as consequence, the improvement of the
contour sharpness for the laser-processed structures. The
second advantage is a direct consequence of the pulse
being shorter than the heat diffusion time, given by the
phonon transport. As in the case of nanosecond- and
microsecond laser ablation, multi-pulse femtosecond
ablation leads to a spontaneous formation of nanoarchitectures [14, 37–40]. However, in contrast to long ablation,
the fs regime is characterized by the absence of target
melting effects, yielding to the formation of clean microand nanoscale features. In particular, using multi-pulse fs
ablation of Si in the presence of SF6 reactive gas, Mazur
et al. [14, 37] managed to fabricate extremely narrow
micro-spikes within the irradiation spot, which are capable
of efficiently absorbing light in the visible and infrared
ranges. The efficient absorption of light exceeding 95% in
the visible was attributed to a geometric multi-reflection
effect offered by a unique spike-based structure, while the
enhanced absorption in the infrared was explained by a
sulphur doping [37]. Due to the wide-range absorption
effect, the produced spike-based structure was called
‘‘black silicon’’ and was later used for the development of
Si-based photodetectors. It is worth noting that such
absorptive features cannot be reproduced by any alternative
non-laser route. Other studies (see, e.g. [41]) reported the
fabrication of nanostructured metal films exhibiting colours
(‘‘coloured metals’’) using similar fs ablation approach.
Our sub-project is devoted to the fabrication of ‘‘black
silicon’’ structures for photovoltaics solar panel applications. The choice of photovoltaics as target application
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Nanoscale Res Lett (2010) 5:454–463
Fig. 2 a Typical image of
‘‘black silicon’’ spot fabricated
on a Si wafer by multi-pulse fs
laser ablation in vacuum; b
Typical scanning electron
microscopy (SEM) image of
penguin-like structure of black
silicon; c Typical absorption
spectra from ‘‘black silicon’’
and silicon treated by different
methods
imposes new criteria on nanostructuring conditions. First,
these applications require a high absorption mostly in the
visible—near-IR range (300–1,000 nm), which enables us
to exclude the necessity of using sulphur-based doping
species. Second, these applications require uniform highquality doping of nanostructured layers to maximize the
photovoltage response. We succeeded in developing of a
novel methodology to produce ‘‘black silicon’’ with such
parameters, employing a Ti:Sapphire laser (wavelength
800 nm, pulse energy 5 mJ, repetition rate 1 kHz) [42].
In contrast to [14, 37], we carry out multi-pulse laser
processing in vacuum under the residual pressure of
(1–5) 9 10-5 mBar. In addition, we avoid the doping
procedure during the laser processing process and do it
afterwards. To achieve a high quality doping of deep layers, the laser-structured samples are boron implanted by
Plasma immersion (PULSION, BF3, 2 kV, 900°C, 30 min)
and thermally annealed (TA). The junction depth obtained
by this method is estimated to be about 150 nm, which is
much shallower than the 3D laser structures; therefore, the
junction follows the topography of the structures. Figure 2a
demonstrates a silicon wafer surface after the laser processing and boron implantation procedure. Here, a rectangular area of 3 9 2 cm2 is written by a programmed
displacement with the speed of 150 lm/s of a femtosecond
laser beam having the spot size of 35 9 35 lm2. One can
123
clearly see a black area on the silicon wafer associated with
‘‘black silicon’’. As shown in Fig. 2b, the treated surface
contains penguin-like nanospikes with the length of up to
10 lm and sub-lm lateral dimensions. Although the morphology of femtosecond laser-treated surface is rather
different compared to narrow spike-like structures in [14,
37], it is also characterized by an enhanced absorption in
the visible range exceeding 90% (Fig. 2c). Depositing
grating-like contacts on the top on the treated area, we were
able to obtain the amplification of photocurrent by 50%
compared to the untreated surface area. Such result was
attributed to an enhanced absorption granted by the penguin-like structures, much larger surface of nanostructured
silicon used for signal collection, and high quality of boron
implantation offered by the post-ablation plasma implantation procedure. The fabricated structures are now actively
tested as photovoltaics solar cells.
Laser Plasma-assisted Nanostructuring of Surfaces
As we mentioned above, UV or ultrashort lasers contribute
to a good radiation absorption by the target itself, while
plasma remains relatively transparent to the incoming
radiation. Such parameters ensure good quality of surface
treatment in laser processing tasks. The plasma effect can
be further minimized by reducing the pressure of the
Nanoscale Res Lett (2010) 5:454–463
457
ambient gas. Depending on plasma plume size conditioned
by the ambient gas pressure, the material can be re-deposited either within the irradiation spot (for high atmospheric
pressure) or into the environment (for reduced pressures).
In particular, for atmospheric pressure, the ablation process
results in the formation of a deep crater, containing
microscale spikes, covered by re-deposited nanoparticles
[13–16]. In this case, chemical transformations in ablated
species are minimal, since the ablated material rapidly cools
down while interacting with the environment [24, 43].
We recently introduced a novel method for surface
nanostructuring, which is characterized by radically different nanofabrication conditions [44–49]. The method
may look paradoxical, since it disaccords with main principles of laser processing requiring the minimization of
plasma-related effects as one of main conditions to achieve
high quality of laser treatment. In contrast, in this method,
plasma-associated effects are amplified by all possible
means. Basically, we use infrared radiation from CO2 laser,
which is strongly absorbed by the plasma itself. When
focused in air and any other gas having atmospheric
pressure, infrared radiation is capable of efficiently igniting
the gas breakdown and this phenomenon is called the
‘‘laser spark’’. The presence of a target decreases the
breakdown threshold by 2–3 orders of magnitude [50]. In
the latter case, the target serves to provide first electrons.
Then, an avalanche plasma discharge develops in ambient
air moving towards the focusing lens. Absorbing main
radiation power through the inverse Bremsstrahlung
mechanism, the plasma accumulates an enormous amount
of energy and is supposed to radically change conditions of
nanocluster production and growth [51]. Indeed, in contrast
to conventional laser ablation, the ablated species find
themselves in a plasma ‘‘reactor’’ with extremely high
temperatures (104 K) [52] and strong electromagnetic fields
[53–56], yielding to a deep chemical transformation of
properties of ablated clusters. The clusters then move back
to the irradiated spot forming a film of clearly separated
and densely packed spherical nanoparticles, as shown in
Fig. 3a. The size of nanoparticles can vary for different
materials, but is usually between 20 and 70 nm. The
Fig. 3 a Typical image of Sibased nanostructures prepared
by laser plasma-assisted
treatment of a Si wafer;
b Photoluminescence spectra
from laser plasma-treated
nanostructured Si spots for
different pumping wavelengths
(325 and 488 nm)
(a)
increase of plasma intensity can also lead to a coagulation
of nanoparticles and the formation of much larger microscale spherical features. Nanostructures treated by this
method have a specific texture with separated densely
packed crystalline nanoparticle constituents, which contribute to unique optical properties. In particular, in the
case of the laser plasma-based treatment of Zn in ambient
air, the produced ZnO nanostructures exhibit very strong
exciton-related peak around 380–385 nm under photoexcitation, whereas photoluminescence peaks associated with
defects are essentially absent [49]. Furthermore, such
nanostructure is capable of providing the mirror-less random lasing effect, arising as a result of a simultaneous
strong amplification and scattering in a highly disordered
medium [48]. Such effect is normally observed by the
appearance of several extremely narrow lines within the
exciton emission band under the increase of the pumping
laser power. In the case of Si and Ge, the laser plasma
treatment leads the formation of nanostructures, which are
capable of generating strong photoluminescence (PL) in
the visible [44–47]. Figure 3b shows PL properties of Si
nanostructures fabricated by the laser plasma-based treatment. One can see two PL bands around 2.1 and 3.25 eV,
associated with Si-based nanostructures. In the case of Ge,
the PL bands are slightly different and situated around 2.2
and 2.9 eV [47].
Near-field Nanoparticle-assisted Nanostructuring
of Surfaces: Fabrication of Patterned Nanoarrays
This sub-project addresses the formation of periodic
nanoarrays by laser-assisted methodologies. The methodology implies two steps [57]: (1) laser ablation to form
programmed periodic nanoscale features on a sacrificial
surface layer; (2) post-ablation deposition/chemical treatment step to fabricate nanoarrays. The first step is based on
the use of near-field particle-assisted ablation to produce
nanoscale features on various substrates [58–61]. A
monolayer of self-assembled SiO2 spheres is formed on a
20-nm alumina (Al2O3) film, as shown schematically in
Fig. 4a. Then, pores are optically drilled in the Al2O3 film
(b)
40000
30000
20000
10000
0
1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Photon Energy (eV)
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458
Fig. 4 Nanodot array
fabrication. a A monolayer of
spheres deposited on a thin
alumina film is illuminated with
a single laser pulse. b Near-field
enhancement underneath the
spheres leads to the parallel
nanodrilling of the film.
c A metal (gold in our case) is
then deposited and the alumina
membrane is dissolved in basic
solution. d An ordered Au
nanodot array is then obtained
on the silicon substrate
Nanoscale Res Lett (2010) 5:454–463
(c)
(a)
Monolayer of
calibrated spheres
Al203
Film
Si Substrate
1. Irradiation (ArF) and particle removal
(b)
Membrane removal with NaOH
(d)
2. Drilling of the Al203 membrane
3. Au Deposition (PLD)
Fig. 5 a SEM image of an
Al2O3 thin film (20 nm)
deposited on a Si substrate and
simultaneously drilled by the
near-field enhancement of a
single nanosecond laser pulse,
which is produced by a lattice of
SiO2 spheres (R = 250 nm); b
AFM image and c depth profile
of gold nanodots created on
silicon substrates by the
LF-PAM-based process
by particle-assisted near-field enhancement. This is
accomplished through the illumination of the spheres with
a single nanosecond laser pulse at the wavelength of
193 nm. Such process leads to the local removal of the
20-nm-thick Al2O3 film under each sphere. Since the
spheres are arranged in a hexagonal array at the surface of
the substrate, the Al2O3 film is decorated with an ordered
arrangement of holes (Fig. 4b). The second step employs
the laser-fabricated porous alumina membrane (LF-PAM)
as a mask for the deposition of metal (Fig. 4c). Then, the
alumina layer is dissolved yielding to the production of a
series of ordered metal nanodots on the surface of the
substrate (Fig. 4d). One of the main advantages of the
proposed method consists in a possibility of producing
nanodot arrays of functional materials, independently of
the nature of the substrate.
In particular, the proposed methodology can be used to
fabricate an ordered array of gold nanodots (plasmonic
arrays). Figure 5a shows an image of an Al2O3 thin film
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after drilling holes by 250-nm silica particle-assisted laser
ablation. One can see that the laser-drilled holes are relatively uniform with the mean size of holes of about
100 nm, while the distance between the nanoholes is well
conditioned by the size of self-assembled silica microparticles. As shown in Fig. 5b, c, the second deposition/
chemical treatment step leads to the formation of high
quality plasmonic arrays based on gold nanodots with the
size of features less than 100 nm. These nanodot arrays are
of importance for biosensing applications [62, 63].
Laser Ablative Synthesis of Nanoclusters
The evolution of properties of formed nanostructures after
the ablation process is mainly determined by the interaction
of the species with the environment. In fact, in the first
approximation, the nanocluster formation process can be
described by the classical theory of condensation and
Nanoscale Res Lett (2010) 5:454–463
459
an excimer laser is normally preferable [11]. UV radiation
is well absorbed by most industrially important materials,
while the formed plasma plume is relatively transparent to
it. The material can be in general ablated in vacuum; but
due to a low probability of nanocluster coalescence in
vacuum, it is difficult to control their growth and the
nanoclusters normally deposit as ablated, forming a dense
film with a significant amorphous fraction. Therefore, it is
important to have a residual neutral light gas to affect the
growth procedure. In this case, nanoclusters cool down
under collisions with gas molecules or atoms, which contribute to their coalescence in the vapour phase. Under such
conditions, the nanocluster growth process can be efficiently controlled by varying the pressure of the ambient
gas [23, 66, 67].
To fabricate Si-based nanostructured films, we normally
use radiation of a pulsed ArF or KrF lasers (193 or 248 nm,
respectively, 15 ns FWHM, repetition rate 30 Hz) to ablate
material from a rotating Si target. The radiation is focused
at the incident angle of 45° to the surface. A substrate is
nucleation in a vapour layer [64, 65]. However, the growth
of nanoclusters strongly depends on initial parameters of
ablated species (energy, angular distribution, density) and
by laser interaction with the environment, which are conditioned by characteristics of pumping radiation. In particular, the radiation can directly affect the nucleation
process if the pumping laser pulse is long enough. Indeed,
the energy of photons can be sufficient to produce nucleation centres, change the dynamics of the nuclei growth
and modify the diffusion of species in the vapour phase.
Below, we give a review of experimental results on the
laser ablative nanostructure growth.
Laser Ablation in Residual Gases and Deposition
of Nanostructured Films
The first possibility is related to the ablation of material in
gaseous environment and the deposition of ablated species
onto a substrate in pulsed laser deposition (PLD) geometry.
In this geometry, the employment of a UV radiation from
Relative Abundance (Arb. units)
(b)
(a)
1000
800
600
400
200
0
0
1
2
3
4
5
Nanocluster Size (nm)
4
Porosity (%)
80
60
3
40
2
20
Nanocrystal size (nm)
100
(d)
2.2
PL peak energy (eV)
5
(c)
2.1
2.0
1.9
1.8
1.7
1.6
1
0
0.1
0.2
0.5
1
2
5
10
Helium pressure (Torr)
Fig. 6 Transmission electron microscopy image of Si nanoparticles
fabricated by pulsed laser ablation at 2 Torr of He (a) and
corresponding nanocluster size distribution (b); c Dependence of
the nanocrystal size (dashed line) and film porosity (solid line) on the
0.1
0.2
0.5
1
2
5
10
Helium pressure (Torr)
pressure of He during the deposition; Inset typical scanning electron
microscopy image of films prepared by pulsed laser ablation;
d Dependence of the position of PL peak from laser-ablated films
on the gas pressure during the deposition
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460
placed on a rotating holder in front of the target. The
experimental chamber is filled with helium for a deposition
at a constant pressure ranging between 0.05 and 10 Torr.
The film thickness after several thousands laser shots is
100–700 nm.
Figure 6 shows a transmission electron microscopy
(TEM) image of several isolated nanoparticles, synthesized
by laser ablation from a Si target and deposited on a carbon-coated TEM grid (a) and corresponding nanoparticle
size distribution (b). One can see that the produced
nanoclusters are very small with the size in the range of
1–4 nm. As shown in Fig. 6c, the mean size of nanoparticles slightly increases under the increase of He pressure.
For example, the increase of the pressure from 0.5 to
8 Torr results in the increase of the nanoparticle size from
1.5 to 4 nm. Another important feature relates to essentially porous texture of the films prepared by pulsed laser
deposition, as illustrated by the inset of Fig. 6c, and the
porosity of films increases with the increase of the ambient
gas pressure (Fig. 6c). Indeed, while the deposition under
1 Torr results only in some germs of roughness, the
experiment under 2 Torr provides a developed porous
structure with pore size of about 50–100 nm. A further
pressure increase up to 4 Torr leads to a formation of weblike aggregations of particles. As shown in Fig. 6c, the
deposition of films at high pressures ([4 Torr) leads to
porosities exceeding 90%, corresponding to the formation
of powders on the substrate. Thus, the pressure of the
ambient gas appears to be one of key parameters, which
determines both the size of synthesized nanocrystals and
the porosity of deposited nanostructured layers. Such a
strong impact of the gas pressure on nanoclustering process
suggests the importance of cooling of ablated species under
their collisions with gas atoms. If the pressure of the gas is
high enough, the nanoclusters experience a sufficient
number of collisions to rapidly cool down and crystallize in
the vapour phase. As a result, they arrive on the substrate in
the form of a powder. In contrast, low collision regime at
low pressures advantages the formation of dense and lowporous films.
It is important that all Si-based films prepared by the
PLD method exhibit strong visible emission (PL) under
photoexcitation, while PL properties of the films are quite
different for films of different porosities. Low-porous films
P \ 40%, deposited at reduced pressures P \ 1.5 Torr,
exhibit relatively weak PL with peak energy strongly
depending on the gas pressure. In particular, the pressure
decrease from 1.5 to 0.15 Torr in different depositions
causes a blue shift of the peak from 1.6 to 2.15 eV, as
shown in Fig. 6d. In contrast, films with an enhanced
porosity P [ 40%, deposited at higher pressures, provide
only spectra with fixed peaks. The first band (1.6–1.7 eV)
is independent of the pressure and can be seen just after the
123
Nanoscale Res Lett (2010) 5:454–463
fabrication process. An additional 2.2–2.3 eV band can
appear under the oxidation of samples in humid air. Here,
PL properties of low-porous films (porosity \40%) are
almost unchangeable under these conditions, while the
integral PL intensity from highly porous films significantly
increases with the prolonged oxidation. We attribute such a
difference of PL properties to the impact of post-fabrication natural oxidation, controlled by the level of porosity.
Dense and self-coagulated structures of the films fabricated
under P \ 1 Torr minimize the impact of ambient atmosphere on the film properties; and for these films, mechanisms related to core silicon crystals became predominant.
Since the blue shift of the spectra under the decrease of
helium residual pressure is accompanied by a certain
decrease of the nanocrystal size, the quantum confinement
mechanism [1] can be considered as one of main opportunities. In contrast, a high porosity enhances the surface
area, which is subjected to surface chemistry modifications
due to interactions of nanocrystallites with oxygen. This
can drastically enhance the role of oxidation in the formation of PL centres and the domination of oxygen-related
PL mechanisms connected either to defects in the SiO2
structure (usually, this mechanism provides 2–2.4 eV PL
[68]) or to the interfacial layer (1.65 eV) [69].
Ultra-short Laser Ablation in Liquid Environment
to Form Colloidal Nanoparticles
In the case of liquid ambience, laser ablation process leads
to the release of nanoclusters into the liquid and the formation of a colloidal nanoparticle solution [11]. In contrast
to conventional chemical reduction methods, this method
enables avoidance of the use of toxic chemical reduction
agents to control the growth of the nano-particles. As an
example, the laser ablation-based synthesis can be implemented in pure deionized water. The independence of
laser-based synthesis of dirty colloidal chemistry makes it
unique for the fabrication of markers of bioanalytes for
sensing and imaging applications. In pure water, however,
or any other aqueous solution exempted of additional
chemically active components, the size of nanoparticles
produced tends to be relatively large, since a natural coalescence of hot ablated nanoclusters cannot be easily
overcome. In particular, nanosecond laser-based ablation
used in most works, generally gives relatively large (10–
300 nm) and strongly dispersed (50–300 nm) particles
[25–28]. Although certain size control can be achieved by
decreasing the wavelength of pumping radiation or varying
the laser fluence, the range of size variations stays rather
moderate in the nanosecond pulse case. Mafune [27]
showed that size characteristics of nanoparticles can be
improved by adding some reactive surfactants such as
sodium dodecyl sulphate (SDS) or CTAB during the
Nanoscale Res Lett (2010) 5:454–463
(b)
1000
Relative Abundance (Arb. Units)
Relative Abundance (arb. units)
(a)
461
800
600
400
200
0
1000
800
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
Particle Size (nm)
2
3
4
5
6
7
Nanoparticle size (nm)
Fig. 7 Transmission electron microscopy images and corresponding size distributions of a TiOx nanoparticles prepared by fs laser ablation from
a Ti target in deionized water; b gold nanoparticles prepared in aqueous solution of polyethylene glycol
ablation. As an example, thiol-containing SDS covered
gold nanoclusters just after their production and thus protected them from further coalescence. However, bioimaging applications of so produced nanoparticles are hardly
possible since the surfactants are not biocompatible.
We recently proposed a femtosecond laser ablationbased method for nanoparticle synthesis, which makes
possible an efficient control of size of prepared nanoparticles by varying physical parameters [28–33]. The experiments are normally carried out with an Ytterbium (400 fs
FWHM, 1,025 nm, 1 kHz) or a Ti/Sapphire laser (110 fs
FWHM, 800 nm, 1 lJ/pulse, 1 kHz). The radiation is
focused onto a target of different materials (Au, Ag, Si, Ti,
Cu), which is placed on the bottom of a glass vessel filled
with aqueous solutions. The vessel is placed on a horizontal
moving platform to avoid the ablation of material from the
same area. The ablation experiments are carried out in pure
deionized water and in aqueous solutions (biopolymers,
cyclodextrins).
When performed in relatively neutral environment such
as deionized water, fs laser ablation normally leads to the
formation of two nanoparticle populations, independently
on the material of the target, as shown in Fig. 7. The first
population is characterized by a small mean nanoparticle
size and narrow size dispersion, whereas the second one
has a much larger mean size and broader size dispersion.
The presence of the two populations suggests the
involvement of two different mechanisms of nanoparticle
growth. The production of the first, less dispersed population is characterized by the absence of target melting
effects, suggesting direct radiation-related ablation of
material [28]. In contrast, the production of the highly
dispersed population is accompanied by a strong melting of
material inside the ablated crater. This melting is usually
attributed to the explosion of a cavitation bubble formed as
a result of energy transfer from laser plasma to the liquid
[11]. It is important that in the fs laser ablation regime, the
nanoparticle size can be efficiently controlled by varying
the intensity of radiation during the nanosynthesis process.
In particular, the mean size of gold nanoparticles can be
reduced from 120 to 4 nm by the decrease of laser fluence
down to the threshold values [28]. Similar effect can be
achieved by changing the radiation focusing on the target
surface [29]. Such efficient method of size control, not
possible with nanosecond or microsecond pulses, is granted
by specific conditions of fs laser–materials interaction. In
the fs ablation regime, much less radiation energy is
transferred to the cavitation bubble (15% compared to 80%
in the nanosecond pulse regime [70]). We believe that the
decrease of the laser fluence down to near-threshold values
enables one to completely avoid cavitation phenomena and
thus eliminate the second highly size-dispersed nanoparticle
population. In addition, the decrease of the laser fluence
changes parameters of ablated nanoclusters (energy, angular distribution etc.), which can in turn affect the final size of
nanoparticles of the first population. In particular, using this
method in the case of gold, we managed to vary the size of
synthesized nanoparticles between 4 and 20 nm [28].
Another important issue is related to chemical properties
of laser-synthesized nanoparticles. Since the nanoparticles
are produced by pure physical ablation from a target
without the involvement of any specific chemicals, surface
chemistry of these nanoparticles can drastically differ from
that of counterparts prepared by conventional colloidal
chemistry [30, 31, 71–73]. In particular, laser-synthesized
gold becomes susceptible to oxidation and, in contrast to
chemically prepared gold, the surface of these nanoparticles is partially covered by a layer of oxide. Furthermore,
the oxidized nanoparticle surface can have different termination, depending on the pH of the environment. The
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462
oxidized portion of the gold surface normally has Au–O–
groups at pH [ 5.8 and increasing numbers of Au–OH
groups at pH \ 5.8 [71]. This oxide-related surface termination makes possible interactions of gold nanoparticles
with groups, for which conventional gold is normally inert.
A prominent example of new gold chemistry is related to
the use of biopolymers [72] and oligosaccharides [30].
Although these substances do not contain gold-reactive
thiol group, they react with laser-synthesized gold nanoparticles, yielding to a drastic reduction of the nanoparticle
size. Figure 7b illustrates the effect of the reduction of
nanoparticle mean size under the use of a biopolymer
polyethylene glycol (PEG). One can see that the nanoparticles’ mean size and size dispersion can be reduced down
to 3 nm with the size dispersion not exceeding 1.5 nm
FWHM. We believe that such reduction of nanoparticle
size is a result of the hydrogen bonding of the –OH groups
of these compounds and the –O- at the gold surface. The
molecules of PEG cover gold nanoclusters just after ablation and act like ‘‘bumpers’’, limiting contact between
particles, preventing their coalescence (when the particles
are still ‘‘hot’’) and aggregation (when the particles are
‘‘cold’’). Similar mechanism takes place during laser
ablation in aqueous solutions of other polymers (dextran
etc.) [72] and oligosaccharides (cyclodextrin) [30]. Thus,
OH groups of different biocompatible compounds can
efficiently react with oxidized gold surface leading to the
reduction of the nanoparticle size. It is important that in
contrast to SDS or other surfactants previously used to
control the nanoparticle size [27], biopolymers and oligosaccharides are essentially biocompatible. Moreover, the
ultra-pure laser-ablated nanoparticles can be functionalized
by a proper chemical modification of chemicals. We
believe that this gives a huge advantage over the chemically produced nanoparticles for nano-engineering and
functionalization of nanoparticles produced, as well as for a
solution of toxicity problems. In particular, PEG is known
as one of best materials to avoid the immune response in
‘‘in vivo’’ applications of inorganic nanoparticles. When
covered by PEG, the nanoparticles become invisible for the
immune system. In the case of laser-synthesized nanoparticles, one does not need to use any intermediate chemical
group to link nanoparticles to PEG, as it takes place in the
case of chemically synthesized nanoparticles.
Conclusions
We reviewed on the development, in our Institute, of various laser-assisted methodologies for nanofabrication in the
gaseous and liquid environment. The methodologies imply
the fabrication of nanoparticles/nanostructures either within
the laser irradiation spot on the target surface or in the
123
Nanoscale Res Lett (2010) 5:454–463
ablated species. Laser-synthesized nanomaterials exhibit
unique optical properties and are exempt of toxicity, which
make them very important for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics.
Acknowledgments The authors are grateful to Agence Nationale de
Recherche (ANR) and Ion Beam Services (IBS company) for Plasma
Immersion doping of the black silicon.
Open Access This article is distributed under the terms of the
Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any
medium, provided the original author(s) and source are credited.
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