A new architecture for improvement of slew rate (SR) of an op-amp or an operational transconductance amplifier (OTA) in FinFET technology is proposed. The principle of operation of the proposed architecture is based on a set of additional... more
A new architecture for improvement of slew rate (SR) of an op-amp or an operational transconductance amplifier (OTA) in FinFET technology is proposed. The principle of operation of the proposed architecture is based on a set of additional current sources which are switched on, only when OTA should provide a high current, usually for charge or discharge of large load capacitor. Therefore, the power overhead is less compared to conventional high SR designs. The commonly used two-stage Miller-compensated op-amp, designed and optimized in sub 45 nm FinFET technology with 1 V single supply voltage, is used as an example for demonstration of the proposed method. For the same FinFET technology and with optimal design, it is shown that the slew rate of the op-amp is significantly improved. The slew rate is improved from 273 to 5590V/μs for an input signal with a rise time of 100 ps. The other performance measures such as gain and phase margin remain unchanged with the additional circuitry u...
In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated... more
In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al-doped Si and 10.03 J/cm2 for Sb-doped Si at substrate temperature (Ts) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when Ts is raised from 300 K to 598 K.
Abstract -- We present a discussion of nonlinear bit shift in thin film inductive heads. A three dimensional finite element model and two dimensional dynamic and self consistent model were used to calculate the nonlinear bit shift as a... more
Abstract -- We present a discussion of nonlinear bit shift in thin film inductive heads. A three dimensional finite element model and two dimensional dynamic and self consistent model were used to calculate the nonlinear bit shift as a function of rise time, write current waveform and pole tip ...
