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    BFR 93 A SMD

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    corneliusflavius7132
    This document summarizes the specifications and performance of the NPN Silicon RF Transistor BFR 93 A. The transistor is designed for low-distortion broadband amplification up to 2 GHz with operating currents from 5 to 30 mA. Key parameters and characteristics are provided, including maximum ratings, DC characteristics, AC characteristics like transition frequency, and S-parameters measured across frequencies from 0.1 to 2 GHz for collector currents of 5 mA and 30 mA. Graphs illustrate characteristics like noise figure and S-parameters as a function of frequency and collector current.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    BFR 93 A SMD

    Uploaded by

    corneliusflavius7132
    319 views10 pages
    This document summarizes the specifications and performance of the NPN Silicon RF Transistor BFR 93 A. The transistor is designed for low-distortion broadband amplification up to 2 GHz with operating currents from 5 to 30 mA. Key parameters and characteristics are provided, including maximum ratings, DC characteristics, AC characteristics like transition frequency, and S-parameters measured across frequencies from 0.1 to 2 GHz for collector currents of 5 mA and 30 mA. Graphs illustrate characteristics like noise figure and S-parameters as a function of frequency and collector current.

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    BFR 93 A SMD low noise transistor datasheet

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    © Attribution Non-Commercial (BY-NC)

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    This document summarizes the specifications and performance of the NPN Silicon RF Transistor BFR 93 A. The transistor is designed for low-distortion broadband amplification up to 2 GHz with operating currents from 5 to 30 mA. Key parameters and characteristics are provided, including maximum ratings, DC characteristics, AC characteristics like transition frequency, and S-parameters measured across frequencies from 0.1 to 2 GHz for collector currents of 5 mA and 30 mA. Graphs illustrate characteristics like noise figure and S-parameters as a function of frequency and collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    319 views10 pages

    BFR 93 A SMD

    Uploaded by

    corneliusflavius7132
    This document summarizes the specifications and performance of the NPN Silicon RF Transistor BFR 93 A. The transistor is designed for low-distortion broadband amplification up to 2 GHz with operating currents from 5 to 30 mA. Key parameters and characteristics are provided, including maximum ratings, DC characteristics, AC characteristics like transition frequency, and S-parameters measured across frequencies from 0.1 to 2 GHz for collector currents of 5 mA and 30 mA. Graphs illustrate characteristics like noise figure and S-parameters as a function of frequency and collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    NPN Silicon RF Transistor

    BFR 93 A

    For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. CECC-type available: CECC 50002/256.

    ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFR 93 A Marking R2 Ordering Code (tape and reel) Q62702-F1086 Pin Configuration 1 2 3 B E C Package1) SOT-23

    Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS 63 C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS

    Symbol VCE0 VCB0 VEB0 IC Ptot Tj TA Tstg

    Values 12 15 2 50 300 150 65 + 150 65 + 150

    Unit V

    mA mW C

    370 290

    K/W

    1) 2) 3)

    For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm 16.7 mm 0.7 mm. TS is measured on the collector lead at the soldering point to the pcb.

    Semiconductor Group

    07.94

    BFR 93 A

    Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 5 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V(BR)CE0 ICB0 IEB0 hFE VCEsat 12 40 90 0.13 50 10 0.4 V nA
    A

    Values typ. max.

    Unit

    Semiconductor Group

    BFR 93 A

    Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 30 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, f = 10 MHz, ZS = 50 IC = 5 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt IC = 30 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt Power gain IC = 30 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt Transducer gain IC = 30 mA, VCE = 8 V, f = 1 GHz, Z0 = 50 Linear output voltage two-tone intermodulation test IC = 30 mA, VCE = 8 V, dIM = 60 dB f1 = 806 MHz, f2 = 810 MHZ, ZS = ZL = 50 Third order intercept point IC = 30 mA, VCE = 8 V, f = 800 MHz fT Ccb Cce Cibo Cobs F Gpe 1.1 1.7 2.6 13.5 5.5 0.55 0.28 2.1 0.8 dB GHz pF Values typ. max. Unit

    I S21e I 2

    11.5 280

    mV

    Vo1 = Vo2

    IP3

    32

    dBm

    Semiconductor Group

    BFR 93 A

    Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina

    Transition frequency fT = f (IC) VCE = 5 V, f = 200 MHz

    Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz

    Semiconductor Group

    BFR 93 A

    Common Emitter Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N F50 dB G p(F50) dB

    IC = 4 mA, VCE = 8 V, Z0 = 50 0.01 0.8 (ZS = 150 ) 1.1

    IC = 30 mA, VCE = 8 V, Z0 = 50 0.01 0.8 2.0 2.6 13.5 (ZS = 100 ) 0.13 108 19.3 0.41 2.15 2.85 13

    Noise figure F = f (IC) VCE = 8 V, f = 10 MHz

    Circles of constant noise figure F = f (ZS) in ZS-plane, IC = 30 mA, VCE = 8 V, f = 800 MHz

    Semiconductor Group

    BFR 93 A

    Noise figure F = f (IC) VCE = 8 V, f = 800 MHz, ZLopt (G)

    Noise figure F = f (IC) VCE = 8 V, f = 2 GHz, ZLopt (G)

    Semiconductor Group

    BFR 93 A

    Common Emitter S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG

    IC = 5 mA, VCE = 8 V, Z0 = 50 0.1 0.2 0.5 0.8 1.0 1.2 1.5 2.0 0.74 0.64 0.49 0.45 0.44 0.43 0.41 0.40 45 81 132 158 169 179 169 160 13.5 10.5 5.6 3.7 3.0 2.6 2.1 1.7 150 129 101 86 79 73 65 54 0.033 0.052 0.078 0.097 0.113 0.127 0.145 0.194 69 57 53 57 61 64 66 71 0.93 0.73 0.50 0.41 0.39 0.38 0.42 0.44 21 30 56 37 39 40 45 48

    S11, S22 = f (f), Z-plane

    IC = 5 mA, VCE = 8 V, Z0 = 50

    Semiconductor Group

    BFR 93 A

    S12, S21 = f (f)

    IC = 5 mA, VCE = 8 V, Z0 = 50

    Semiconductor Group

    BFR 93 A

    Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG

    IC = 30 mA, VCE = 8 V, Z0 = 50 0.1 0.2 0.5 0.8 1.0 1.2 1.5 2.0 0.38 0.37 0.36 0.36 0.35 0.34 0.31 0.30 105 138 170 178 177 173 157 152 27.6 16.5 7.2 4.6 3.8 3.2 2.6 2.1 125 107 90 80 75 71 65 55 0.021 0.032 0.066 0.101 0.125 0.147 0.169 0.228 64 66 73 74 73 72 70 69 0.69 0.41 0.26 0.21 0.20 0.20 0.23 0.28 41 44 39 32 40 41 43 46

    Semiconductor Group

    BFR 93 A

    S11, S22 = f (f), Z-plane IC = 30 mA, VCE = 8 V, Z0 = 50

    S12, S21 = f (f) IC = 30 mA, VCE = 8 V, Z0 = 50

    Semiconductor Group

    10

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