BFR90

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.
Observe precautions for handling.

Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.

Features
D High power gain
D Low noise figure
D High transition frequency
3

94 9308

13623

BFR90 Marking: BFR90

Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range

Test Conditions

Tamb 60 C

Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg

Value
20
15
2
30
300
150
65 to +150

Unit
V
V
V
mA
mW
C
C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu

Document Number 85028

Rev. 3, 20-Jan-99

Symbol
RthJA

Value
300

Unit
K/W

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BFR90
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
DC forward current transfer ratio

Test Conditions
VCE = 20 V, VBE = 0
VCB = 20 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 14 mA

Symbol Min Typ Max Unit

ICES
100 mA
ICBO
100 nA
IEBO
10
mA
V(BR)CEO 15
V
hFE
25 50 150

Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter
capacitance
Emitter-base capacitance
Noise figure
Power gain

Linear output voltage two

tone intermodulation test
Third order intercept point

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2 (9)

Test Conditions
VCE = 10 V, IC = 14 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz

Symbol
fT
Ccb
Cce

VEB = 0.5 V, f = 1 MHz

VCE = 10 V, IC = 2 mA, f = 500 MHz,
ZS = 50
VCE = 10 V, IC = 14 mA, ZL = ZLopt,
f = 500 MHz
VCE = 10 V, IC = 14 mA, ZL = ZLopt,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 10 V, IC = 14 mA, f = 800 MHz

Ceb
F

1.3
2.2

pF
dB

Gpe

19.5

dB

Gpe

14

dB

V1 = V2

100

mV

IP3

23

dBm

Min

Typ
5
0.35
0.3

Max

Unit
GHz
pF
pF

Document Number 85028

Rev. 3, 20-Jan-99

BFR90
Vishay Semiconductors
Common Emitter SParameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified
S11
VCE/V

IC/mA

10

Document Number 85028

Rev. 3, 20-Jan-99

f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000

LIN
MAG
0.82
0.59
0.41
0.30
0.29
0.30
0.35
0.41
0.45
0.65
0.35
0.22
0.16
0.18
0.21
0.27
0.33
0.37
0.45
0.19
0.12
0.12
0.15
0.18
0.24
0.30
0.34

S21
ANG
deg
27.8
72.7
107.7
154.9
176.7
153.2
126.8
108.7
99.1
39.9
91.8
130.4
177.4
150.9
131.6
112.7
100.1
92.8
54.6
112.5
156.4
148.7
129.3
117.0
104.4
94.9
89.5

LIN
MAG
6.31
4.66
3.49
2.474
2.08
1.80
1.50
1.32
1.22
12.44
7.26
4.85
3.22
2.66
2.28
1.89
1.65
1.53
18.55
8.73
5.54
3.60
2.96
2.51
2.08
1.82
1.67

S12
ANG
deg
155.8
121.6
99.9
78.0
66.9
56.4
43.1
31.2
24.4
145.2
108.3
90.2
72.6
63.4
54.4
42.8
31.8
25.2
133.7
99.4
84.5
69.5
61.3
53.0
42.1
31.8
25.4

LIN
MAG
0.03
0.06
0.08
0.10
0.11
0.12
0.15
0.18
0.20
0.02
0.05
0.07
0.10
0.12
0.14
0.18
0.21
0.24
0.02
0.04
0.07
0.11
0.13
0.16
0.19
0.23
0.25

S22
ANG
deg
73.8
54.0
46.7
44.9
46.2
47.6
48.9
49.2
48.0
70.3
58.7
58.5
58.2
57.3
55.5
51.9
48.2
45.0
70.4
66.6
66.8
64.0
61.4
58.0
52.8
47.7
43.7

LIN
MAG
0.95
0.80
0.70
0.63
0.60
0.57
0.54
0.50
0.48
0.88
0.65
0.57
0.52
0.50
0.47
0.44
0.40
0.38
0.79
0.55
0.49
0.46
0.44
0.42
0.38
0.35
0.32

ANG
deg
10.2
22.1
27.0
32.3
36.3
40.6
47.6
55.5
61.1
16.2
25.4
26.9
30.6
34.5
38.6
45.2
52.1
56.9
21.5
24.7
24.9
28.7
32.8
37.1
43.5
49.9
54.5

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BFR90
Vishay Semiconductors
S11
VCE/V

IC/mA

14

20

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4 (9)

f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000

LIN
MAG
0.35
0.14
0.10
0.12
0.15
0.18
0.24
0.30
0.33
0.26
0.11
0.09
0.13
0.15
0.18
0.24
0.30
0.33

S21
ANG
deg
62.6
124.4
173.0
138.3
123.3
113.2
101.6
93.2
88.4
71.1
140.3
169.9
131.1
117.8
109.5
99.5
93.1
87.9

LIN
MAG
20.95
9.11
5.71
3.70
3.03
2.58
2.13
1.85
1.72
22.95
9.39
5.84
3.75
3.07
2.62
2.16
1.87
1.73

S12
ANG
deg
128.4
96.3
82.7
68.2
60.4
52.3
41.7
31.4
25.0
123.4
93.8
81.1
67.3
59.7
51.7
41.1
30.9
24.8

LIN
MAG
0.02
0.04
0.07
0.11
0.13
0.16
0.20
0.23
0.26
0.01
0.04
0.07
0.11
0.14
0.16
0.20
0.24
0.26

S22
LIN
MAG

ANG
deg
71.4
70.1
69.3
65.5
62.5
58.7
52.8
47.4
43.3
72.4
73.2
71.5
66.9
63.3
59.3
53.3
47.7
43.4

0.73
0.51
0.47
0.44
0.42
0.40
0.36
0.33
0.30
0.68
0.49
0.46
0.43
0.42
0.39
0.36
0.32
0.30

ANG
deg
23.2
23.7
23.7
27.7
32.1
36.5
42.9
49.2
53.6
23.9
22.0
22.0
26.7
31.0
35.4
41.8
48.1
52.4

Document Number 85028

Rev. 3, 20-Jan-99

BFR90
Vishay Semiconductors
S11
VCE/V

IC/mA

10

10

14

Document Number 85028

Rev. 3, 20-Jan-99

f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000

LIN
MAG
0.84
0.61
0.42
0.28
0.26
0.27
0.32
0.39
0.43
0.67
0.36
0.21
0.13
0.14
0.17
0.23
0.29
0.33
0.49
0.19
0.09
0.07
0.10
0.14
0.19
0.26
0.29
0.39
0.13
0.06
0.07
0.10
0.13
0.19
0.24
0.29

S21
ANG
deg
25.7
68.0
101.2
147.9
177.6
156.2
127.9
109.1
98.7
36.6
83.1
116.9
173.7
153.1
130.1
110.4
97.7
91.2
47.6
93.8
133.4
151.2
124.5
109.4
98.6
90.8
86.0
53.4
98.6
146.3
131.1
113.4
103.2
94.2
89.1
85.3

LIN
MAG
6.21
4.69
3.57
2.53
2.14
1.84
1.54
1.34
1.24
12.62
7.54
5.07
3.37
2.78
2.37
1.97
1.71
1.58
18.87
9.12
5.82
3.77
3.09
2.63
2.17
1.89
1.75
21.53
9.58
6.02
3.89
3.18
2.70
2.23
1.93
1.79

S12
ANG
deg
157.1
123.8
102.1
80.4
69.5
59.0
46.0
34.2
27.3
146.6
110.1
91.8
74.5
65.5
56.7
45.3
34.6
28.0
135.7
101.1
86.1
71.2
63.3
55.2
44.7
34.6
28.3
130.3
97.8
84.0
70.0
62.4
54.7
44.3
34.2
28.13

LIN
MAG
0.02
0.05
0.07
0.08
0.09
0.11
0.13
0.15
0.18
0.02
0.04
0.06
0.08
0.10
0.12
0.15
0.18
0.20
0.02
0.04
0.06
0.09
0.11
0.13
0.16
0.20
0.22
0.01
0.04
0.06
0.09
0.11
0.14
0.17
0.20
0.22

S22
ANG
deg
74.8
56.2
49.3
48.1
50.0
51.9
54.1
55.0
54.2
71.9
60.7
60.6
61.0
60.5
59.0
56.1
53.1
50.3
71.4
68.0
68.4
66.5
64.3
61.4
56.9
52.4
48.9
72.2
71.0
70.7
67.8
65.3
62.0
57.0
52.3
48.6

LIN
MAG
0.96
0.84
0.75
0.69
0.67
0.65
0.62
0.59
0.57
0.91
0.72
0.65
0.61
0.59
0.57
0.54
0.51
0.49
0.83
0.63
0.58
0.56
0.54
0.52
0.49
0.46
0.44
0.79
0.60
0.57
0.55
0.53
0.51
0.48
0.45
0.43

ANG
deg
8.3
18.4
22.7
27.8
31.6
35.6
41.9
48.8
53.8
13.0
20.7
22.2
26.3
29.8
33.6
39.7
45.7
50.0
16.8
19.6
20.2
24.4
28.2
32.2
38.0
44.1
48.0
17.8
18.5
19.2
23.7
27.4
31.5
37.4
43.3
47.3

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BFR90
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb Collector Base Capacitance ( pF )

P tot Total Power Dissipation ( mW )

400
350
300
250
200
150
100
50
0
0

20

40

60

80

0.6
0.4
0.2
f=1MHz
0
0

12

16

20

Figure 3. Collector Base Capacitance vs.

Collector Base Voltage
3.5

5000

3.0
F Noise Figure ( dB )

6000

4000
3000
2000
VCE=10V
f=500MHz

1000

VCB Collector Base Voltage ( V )

12887

Figure 1. Total Power Dissipation vs.

Ambient Temperature

f T Transition Frequency ( MHz )

0.8

100 120 140 160

Tamb Ambient Temperature ( C )

12845

1.0

2.5
2.0
1.5
1.0

VCE=10V
f=800MHz
ZS=50

0.5

0
0

12886

16

24

32

40

IC Collector Current ( mA )

Figure 2. Transition Frequency vs. Collector Current

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6 (9)

0
12888

10

15

20

25

30

IC Collector Current ( mA )

Figure 4. Noise Figure vs. Collector Current

Document Number 85028

Rev. 3, 20-Jan-99

BFR90
Vishay Semiconductors
VCE = 10 V, IC = 14 mA , Z0 = 50

W
S12

S11
j

90
120

j0.5

60

j2
150

j0.2

2.0 GHz

0.2

0.5

2.0 GHz
1.0

0.8

30

j5

0.1

180

0.2

0.4

0.3

0.1

j0.2

j5
150

j0.5

30

j2
120
j

13 506

60
90

13 507

Figure 5. Input reflection coefficient

Figure 7. Reverse transmission coefficient

S21

S22
j

90
120

60
j0.5

150

j2

30
j0.2

2.0 GHz
0.3
180

0.1

20

40

j5

0.2

0.5

150

0.1

2.0 GHz

j0.2

0.5

j5

30
j0.5
120

13 508

90

Figure 6. Forward transmission coefficient

Document Number 85028

Rev. 3, 20-Jan-99

j2

60
13 509

Figure 8. Output reflection coefficient

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7 (9)

BFR90
Vishay Semiconductors
Dimensions of BFR90 in mm

96 12244

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8 (9)

Document Number 85028

Rev. 3, 20-Jan-99

BFR90
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85028

Rev. 3, 20-Jan-99

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