2.

2.2 Rezistoare dependente

2.2.3 Rezistoarele dependente de fluxul luminos Fotorezistoare
Fotorezistoarele (LDR Light DHSHQGHQW5HVLVWRUVVXQWUH]LVWRDUHDFURU
UH]LVWHQ  GHSLQGH GH IOX[XO OXPLQRV LQFLGHQW SH VXSUDID D HOHPHQWXOXL UH]LVWLY
9DULD LDUH]LVWHQ HLHVWHFDX]DWGHHOLEHUDUHDGHHOHFWURQLSULQHIHFWXOIRWRHOHFWULF
LQWHUQ Q JHQHUDO OD UHDOL]DUHD IRWRUH]LVWRDUHORU VH XWLOL]HD] PDWHULDOH
semiconductoare cunoscute sub numele generic de materiale fotoconductoare.
6WUXFWXUD GH IRWRUH]LVWRU HVWH DVWIHO UHDOL]DW vQFkW OD vQWXQHULF WRWDO V FRQ LQ
IRDUWH SX LQL HOHFWURQL OLEHUL SUH]HQWkQG DVWIHO R UH]LVWHQ  ULGLFDW 2GDW FX
DEVRUE LD IOX[XOXL OXPLQRV WRW PDL PXO L HOHFWURQL VXQW HOLEHUD L UH]LVWHQ D
PDWHULDOXOXLVF]kQGFRUHVSXQ]WRU
Pentru structura din figura 2.180VHSRDWHFRQVLGHUDFQXPUXOGHHOHFWURQL
HOLEHUD LSHVHFXQGvQPDWHULDOHVWH1 Lld, unde HVWHRFRQVWDQWFHGHSLQGH
GHOXQJLPHDGHXQGDUDGLD LHL/LQWHQVLWDWHDUDGLD LHLOXPLQRDVHOGVXSUDID D
LQFLGHQW
U
d
l

(a)

(b)

Fig. 2.180DVWUXFWXUIRWRFRQGXFWRDUHUHFWDQJXODUEIRUPDHOHFWUR]LORUXQXLIRWRUH]LVWRU

La aplicarea unei diferen HGHSRWHQ LDO8vQWUHHOHFWUR]LHOHFWURQLLYRUDYHD

viteza v:
U
(2.218)
v = E =
d
cu - mobilitatea electronilor, E intensitatea cmpului electric.
/DFRQGXF LDFXUHQWXOXLYRUFRQWULEXLQXPDLHOHFWURQLLDIOD LODGLVWDQ DY
de electrodul pozitiv,  ILLQG GXUDWD PHGLH GH YLD  D HOHFWURQLORU OLEHUL 'HFL OD
FXUHQWXOWRWDOYD FRQWULEXLQXPDL IUDF LXQHDY/d din totalul electronilor, curentul
electric fiind:
v L l e U
=
(2.219)
I =Ne
,
d
d
FXHVDUFLQDHOHFWURQXOXL'HDLFLUH]XOWUH]LVWHQ DPDWHULDOXOXL5
U
d
(2.220)
R= =
L1
I e l

Cap.2 Rezistoare

'XUDWDGHYLD DHOHFWURQLORUOLberi GHSLQGHGHOXQJLPHDGHXQGLGH

LQWHQVLWDWHDOXPLQRDVGXSRUHOD LHGHWLSXO = 0 ( ) L , cu RFRQVWDQWLDU0

DUHVHPQLILFD LDXQXLWLPSGHYLD GHUHIHULQ 
$VWIHOUHOD LDVHSRDWHSXQHVXEIRUPD
(2.221)
R = AL
d
,
cu
A=
=1-
(2.222)
e 0l
6HREVHUYFSHQWUXDDYHDRYDULD LHFkWPDLPDUHDUH]LVWHQ HLvQWUHVWDUHD
GHvQWXQHULFLVWDUHDGHLOXPLQDUHHVWHQHFHVDUFDYDORDUHDFRQVWDQWHL$VILHFkW
PDL PLF $FHVW OXFUX VH UHDOL]HD] SULQ DOHJHUHD GH PDWHULDOH FX YDORUL FkW PDL
mari pentru ,  L 0 L SULQ DVLJXUDUHD XQXL UDSRUW OG FkW PDL PDUH XWLOL]kQG
HOHFWUR]LGHIRUPLQWHUGLJLWDO
3ULQFLSDOLLSDUDPHWULLDLIRWRUH]LVWRDUHORUVXQWSUH]HQWD LvQFRQWLQXDUH
1) 5H]LVWHQ DODvQWXQHULF5DUHSUH]LQWYDORDUHDUH]LVWHQ HLODLOXPLQDUHQXO
2) 5H]LVWHQ D OD LOXPLQDUH  UHSUH]LQW YDORDUHD UH]LVWHQ HL OD R LOXPLQDUH
VSHFLILFDWGHH[HPSOXOX[
$WXQFL FkQG VH YRUEHWH GH LOXPLQDUH WUHEXLH GHILQLWH FDUDFWHULVWLFLOH VXUVHL GH
OXPLQ2FDUDFWHULVWLFDVXUVHORUHVWH LOXPLQDUHD H[SULPDW vQ OX[ $OW XQLWDWH
XWLOL]DW SHQWUX LOXPLQDUH HVWH IF  GH OD IRRW  FDQGOH  IF   OX[ 'H
DVHPHQHD HVWH IRDUWH LPSRUWDQW FDUDFWHULVWLFD VSHFWUDO D VXUVHL GH OXPLQ 6H
XWLOL]HD] FD VWDQGDUG R VXUV FH UDGLD] DVHPQWRU XQXL XQ FRUS QHJUX FX
temperatura de culoare de 2850 K.
3) Sensibilitatea la fluxul luminosHVWHDSUHFLDWSULQPDLPXO LSDUDPHWUL
- 6HQVLELOLWDWHDLQWHJUDO6HVWHUDSRUWXOGLQWUHIRWRFXUHQWGLIHUHQ DGLQWUH
curentul prin fotorezistor la iluminarea , ILFXUHQWXOODvQWXQHULF,D)
I ID
.
LIOX[XOOXPLQRVLQFLGHQW S =

- 6HQVLELOLWDWHD VSHFWUDO  HVWH UDSRUWXO GLQWUH IRWRFXUHQW L IOX[XO

I I D
monocromatic () incident: S =
.

R RD
R
.
- Sensibilitatea fotorezistorului S R =
=
RD
RD
- &DUDFWHULVWLFD VSHFWUDO D VHQVLELOLW LL  UHSUH]LQW YDULD LD VHQVLELOLW LL
spectrale SFXOXQJLPHDGHXQG.
- &DUDFWHULVWLFDUH]LVWHQ LOXPLQDUH
4) 3XWHUHD QRPLQDO 3N  GHILQLW VLPLODU FD OD UH]LVWRDUH IL[H H[LVWkQG L OD
IRWRUH]LVWRDUHGLDJUDPDGHVFGHUHDGLVLSD LHL
5) Constanta de timp GHILQLWVLPLODUFDODWHUPLVWRDUHFXGLIHUHQ DDSOLFULL
unui flux luminos n locul celui termic. Intervalul de timp egal cu constanta de
WLPS VH RELQXLHWH V PDL ILH QXPLW WLPS GH UVSXQV FDUH SRDWH IL WLPS GH
2

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

FUHWHUH ULVH WLPH VDX WLPS GH FGHUH IDOO WLPH &X SUHFL]DUHD F
GHQXPLUHDSRDWHGXFHODXQHOHFRQIX]LLGLQPRWLYHFH LQGHILUHVFXOH[SULPULL
vom utiliza aceste denumiri.
7LPSXO GH FUHWHUH HVWH GHILQLW FD WLPSXO QHFHVDU FRQGXFWDQ HL
IRWRUH]LVWRUXOXL SHQWUX D FUHWH OD H  GLQ YDORDUHD ILQDO FHHD FH
FRUHVSXQGHXQHLWUDQ]L LLGHODvQWXQHULFODOXPLQ
7LPSXOGHFGHUHHVWHGHILQLWFDWLPSXOvQFDUHFRQGXFWDQ DIRWRUH]LVWRUXOXL
VFDGHODH GLQYDORDUHDDYXWODRDQXPLWLOXPLQDUH
7LPSXO GH UVSXQV GHSLQGH GH QLYHOXO GH LOXPLQDUH GH PHPRULD VDX
LVWRULDPDWHULDOXOXLLGHWHPSHUDWXUDDPELDQWQJHQHUDOYLWH]DGHUVSXQVHVWH
PDL PDUH FkQG VH OXFUHD] OD QLYHOH PDL PDUL GH LOXPLQDUH )HQRPHQXO GH
KLVWHUH]LVPHPRULHSUH]HQWDWGHIRWRUH]LVWRDUHHVWHDVHPQWRUFXUHPDQHQ DSH
UHWLQD RFKLXOXL OD WUHFHUHD EUXVF vQWUH QLYHOH GH LOXPLQDUH GLIHULWH 2 VWRFDUH D
GLVSR]LWLYHORUvQvQWXQHULFYDGXFHODRYLWH]PDLPLFGHFkWvQFD]XOGHSR]LWULLOD
OXPLQ &X FkW VWRFDUHD H PDL vQGHOXQJDW FX DWkW HIHFWXO H PDL SURQXQ DW /D
WHPSHUDWXULFRERUkWHYLWH]DGHUVSXQVHVWHPDLPLF
QJHQHUDOWLPSXOGHFUHWHUHHVWHGLIHULWGHWLPSXOGHFGHUHvQIXQF LHGH
PDWHULDOXO L WHKQRORJLD IRWRUH]LVWRDUHORU GH QLYHOXO GH LOXPLQDUH L GH DO L
SDUDPHWULDPLQWL LDQWHULRU
6) Domeniul temperaturilor de lucru (Tm, TM) 7HPSHUDWXUD PD[LP  QX DUH
YDORULIRDUWHPDULODIRWRUH]LVWRDUHvQVSHFLDOGDWRULWJHQHUULLGHHOHFWURQLSH
FDOHWHUPLF
La realizarea fotorezistoarelor au fost utilizate materialele: Seleniu cristalin6H VXOIXU GH SOXPE 3E6 VXOIXU GH FDGPLX &G6 VHOHQLXU GH FDGPLX &G6H
Seleniul cristalin are un domeniu spectral larg de utilizare dar are sensibilitate
UHODWLY PLF 6XOIXUD GH SOXPE DUH PD[LPXO VHQVLELOLW LL VSHFWUDOH vQ GRPHQLXO
LQIUDURXLSUH]LQWRLQHU LHPLF
Pentru domeniul vizibil, fotorezistoaUHOH SH ED] GH &G6 VXQW FHOH PDL
XWLOL]DWH GDWRULW VHQVLELOLW LL LQWHJUDOH PDUL D FDUDFWHULVWLFLL 5 H[SRQHQ LDOH
OLQLDU OD VFDU ORJDULWPLF L D FDUDFWHULVWLFLL VSHFWUDOH DVHPQWRDUH RFKLXOXL
omenesc.
&DUDFWHULVWLFD VSHFWUDO D IRWRUH]LVWRDUHlor produse de EG&G Vactec este
SUH]HQWDWvQILJXUDLDUvQILJXUDHVWHSUH]HQWDWJUDILFXOUH]LVWHQ HLvQ
IXQF LHGHLOXPLQDUHSHQWUXDFHOHDLFRPSRQHQWH

Cap.2 Rezistoare

Fig. 2.181&DUDFWHULVWLFDVSHFWUDOWLSLFDIRWRUH]LVWRDUHORUSHED]GH&G6>@

Fig. 2.182&DUDFWHULVWLFLOH5H]LVWHQ ,OXPLQDUHDOHIRWRUH]LVWRDUHORU(* *9DFWHF>@

&k LYDGLQWUHSDUDPHWULLXQRUIRWRUH]LVWRDUHVXQWVLQWHWL]D LvQWDEHOXO 2.24.

Tabelul 2.243DUDPHWULLXQRUIRWRUH]LVWRDUHSHED] GH&G6
Parametru/ Tip
fotorezistor
5H]LVWHQ D OD

2322-60093002
Philips
>1M

2322-600- NSL19-M51 NORP12

RS Compo- RS Compo95001
nents
nents
Philips
>10M
>20M
>1M

VT43N2
EG & G
Vactec
>300K

VT935G
EG & G
Vactec
>1 M

ntuneric RD
5H]LVWHQ D OD LOX

<110

75-300

minare 1000 lux

3XWHUH QRPLQDO 340

0,1
0,2
(W)
Domeniul temperatu- -30+60C -2060C
rilor de lucru
10ms/
10ms/
7LPSXO GH WUDQ]L LH
FUHWHUHFGHUH
200k/s* 200k/s*

5 k
(la 100 lux)
0.05

400

-2575C

-60- -75C

-40- 75C

-40- 75C

45/55 ms

18/120 ms

90/18 ms

35/5 ms

* - parametru echivalent rata de revenire

0,25

824 k 1050 k
(la 10 lux) (la 10 lux)
0,4
0,08

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

Din punct de vedere constructiv, fotorezistoarele sunt realizate prin

GHSXQHUHD XQXL VWUDW VXE LUH IRWRFRQGXFWLY SH XQ PDWHULDO FHUDPLF &RQWDFWHOH
PHWDOLFHVXQWGHSXVHSULQHYDSRUDUHvQYLGSHVXSUDID DPDWHULDOXOXLIRWRFRQGXFWRU
LDUWHUPLQDOHOHVXQWFRQHFWDWHODDFHVWHVXSUDIH HPHWDOLFHFDvQ ILJXUD  D
0DWHULDOHOH IRWRFRQGXFWRDUH GHSXVH VXE IRUP GH VWUDWXUL VXE LUL DX R UH]LVWHQ 
VSHFLILF PDUH 3HQWUX DVLJXUDUHD XQHL UH]LVWHQ H UHGXVH OD QLYHOH GH LOXPLQDUH
PRGHUDWH VSD LXO GLQWUH FRQWDFWH HVWH UHDOL]DW vQJXVW LDU HOHFWUR]LL DX IRUP
LQWHUGLJLWDO

(a)
(b)
Fig. 2.1836WUXFWXUDFRQVWUXFWLYDIRWRUH]LVWRDUHORUDGHWDOLXE>@

6H REVHUY GLQ ILJXUD 2.183 E F UH]LVWHQ D IRWRUH]LVWRUXOXL OD QLYHOXO GH
iluminare L este RL = SL

d
, cu SLUH]LVWHQ DVSHFLILFODLOXPLQDUHD/LDUGOHVWH
l

UDSRUWXOGHDVSHFW$DFXPDIRVWSUH]HQWDWDQWHULRUDFHVWUDSRUWHVWHGHGRULWV
ILHFkWPDLPLF8]XDOVHSRWRE LQHSHQWUXGOYDORULvQWUHL
([LVW L YDULDQWH GH IRWRUH]LVWRDUH SH ED] GH &G6 YH]L ILJXUD  E
UHDOL]DWH VXE IRUP GH GLVFXUL SULQ WHKQRORJLD FHUDPLF (OHFWUR]LL VH GHSXQ OD
aceste variante de fotorezistoare tot prin evaporare n vid.
Q ILJXUD  VXQW SUH]HQWDWH GRX WLSXUL GH IRWRUH]LVWRDUH FX GHWDOLL GH
realizare a structurilor.
)D GHDOWHGLVSR]LWLYHRSWRHOHFWURQLFHVHPLFRQGXFWRDUHFXIXQF LLVLPLODUH
cum ar fi fotodiodele sau fototranzistoarele, fotorezistoarele au cteva avantaje:
au cel mai redus cost;
DFRSHUXQGRPHQLXODUJDOLQWHQVLW LORUOXPLQRDVHSRUQLQGGHODQLYHOHIRDUWH
UHGXVH GH LOXPLQDUH OXPLQD OXQLL SkQ OD QLYHOH IRDUWH ULGLFDWH H[SXQHUH
GLUHFWODVRDUH
5

Cap.2 Rezistoare

DXRGLQDPLFGHYDULD LHGHFkWHYDRUGLQHGHPULPHvQWUHVWDUHDGHvQWXQHULFL
GHLOXPLQDUHH[LVWPXOWHYDORULGLVSRQLELOHDOHUH]LVWHQ HL
SRWOXFUDLvQFXUHQWDOWHUQDWLY
SRW IL XWLOL]DWH FX DSURDSH WRDWH VXUVHOH GH OXPLQ vQ GRPHQLXO YL]LELO L
LQIUDURX DSURSLDW /(' OPSL FX LQFDQGHVFHQ  QHRQ L IOXRUHVFHQWH ODVHU
IODFUOXPLQVRODU

Fig. 2.184'RXYDULDQWHGHIRWRUH]LVWRDUH>@

$SOLFD LLOH IRWRUH]LVWRDUHORU VH vPSDUW vQ GRX FDWHJRULL ([LVW DSOLFD LL
QXPLWHGLJLWDOHODFDUHHVWHLPSRUWDQWQXPDLYDULD LDUH]LVWHQ HLvQWUHGRXVWUL
GHLOXPLQDUH$SOLFD LLOHGHWLSDQDORJLFXWLOL]HD]YDULD LDFRQWLQXDUH]LVWHQ HL
cu iluminarea.
'LQ SULPD FDWHJRULH GH DSOLFD LL DPLQWLP FRQWUROXO LOXPLQDWXOXL QRFWXUQ
GHWHFWRDUHGHIXPFLWLWRDUHGHFDUWHOHVHQ]RULGHSUH]HQ LGHSR]L LHLQVWDOD LL
GHDODUPLVHFXULWDWHHWF
Q D GRXD FDWHJRULH GH DSOLFD LL vQWkOQLP FRQWUROXO H[SXQHULL OD FDPHUH GH
ILOPDUH L YLGHR FLUFXLWH GH UHJODUH DXWRIRFXV FRQWUROXO LOXPLQULL FRQWUROXO
WRQHUXOXLODPDLQLGHIRWRFRSLDWFRQWUROXOVXUVHORUGHOXPLQPRGXODWHHWF
n figura 2.185 D HVWH SUH]HQWDW R DSOLFD LH WLSLF GH WLS GLJLWDO FX
IRWRUH]LVWRUXO 1253  L DQXPH R FRPDQG RSWLF GH DF LRQDUH D XQXL UHOHX OD
GHSLUHDXQXLSUDJGHLOXPLQDUHSUHVWDELOLW3UDJXOGHFRPXWDUHVHSRDWHUHJODFX
rezistorul semireglabil de 5k.
Q ILJXUD  E HVWH SUH]HQWDW R DSOLFD LH GH WLS DQDORJLF XQ
H[SRQRPHWUX IRWRJUDILF )XQF LRQDUHD HVWH IRDUWH VLPSO FXUHQWXO SULQ FLUFXLW
RIHULQG LQIRUPD LD GHVSUH VWDUHD GH LOXPLQDUH ([SRQRPHWUXO DUH GRX VFDOH GH
sensibilitate comutabile, care se pot etalona din rezistoarele semireglabile R1L52.

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

(a)

(b)
Fig. 2.185$SOLFD LLDOHIRWRUH]LVWRDUHORUDFRPDQGRSWLFEH[SRQRPHWUXIRWRJUDILF>@

2.2.4 Rezistoare dependente de cmpul magnetic - Magnetorezistoare

8QPDJQHWRUH]LVWRUHVWHXQUH]LVWRUDF UXLUH]LVWHQ VHPRGLILFvQSUH]HQ D
cmpului magnetic.
Efectul magnetorezistiv FRQVW vQ PRGLILFDUHD UH]LVWHQ HL PDWHULDOXOXL vQ
SUH]HQ D  FkPSXOXL PDJQHWLF GDWRULW FXUEULL WUDLHFWRULLORU HOHFWURQLORU GH
FRQGXF LH
2EVHUYD LH Efectul magnetorezistiv este diferit de efectul Hall, efect produs tot n
SUH]HQ DFkPSXOXLPDJQHWLF
0DJQHWRUH]LVWLYLWDWHD GHILQLW SULQ YDULD LD UHODWLY D UH]LVWLYLW LL
(H ) (0)
=
   HVWH vQ JHQHUDO SR]LWLY 9DULD LD FRQFUHW D UH]LVWLYLW LL
0
(0)

Cap.2 Rezistoare
&

depinde &de material, de unghiul dintre cmpul magnetic aplicat H  L FkPSXO

electric E .
& &
3HQWUX FkPSXUL PDJQHWLFH VODEH PDJQHWRUH]LVWLYLWDWHD WUDQVYHUVDO HE

H2
GHSLQGHSWUDWLFGH+
0
QPDMRULWDWHDFD]XULORUH[LVWRYDORDUHGHVDWXUD LHDPDJQHWRUH]LVWLYLW LL
E[LVW PDJQHWRUH]LVWRDUH UHDOL]DWH SH ED] GH PDWHULDOH VHPLFRQGXFWRDUH
(InSb), dar cel mai des sunt utilizate magnetorezisoarele bazate pe metale
feromagnetice anizotrope, componentele fiind cunoscute sub numele MR.
'HLHIHFWXOPDJQHWRUH]LVWLYHVWHFXQRVFXWGHIRDUWHPXO LDQLDELDvQXOWLPLL
 DQL DX DSUXW DSOLFD LL SUDFWLFH SHUPLVH GH GH]YROWDUHD WHKQRORJLLORU
PLFURHOHFWURQLFH&XWRDWHFHIHFWXOPDJQHWRUH]LVWLYHVWHSUH]HQWvQDSURDSHWRDWH
PHWDOHOHDSOLFD LLDXJVLWVWUXFWXULOHED]DWHSHSHUPDOOR\DOLDM1L)HVDXSHDOWH
PDWHULDOH IHURPDJQHWLFH /D DFHVWH PDWHULDOH H[LVW L R SXWHUQLF DQL]RWURSLH
VWUXFWXUDO FDUH LQIOXHQ HD] GHSHQGHQ D FRQFUHW D UH]LVWLYLW LL GH FkPSXO
magnetic.
QXOWLPLLDQLDXDSUXWPDJQHWRUH]LVWRDUHED]DWHSHHIHFWXOPDJQHWRUH]LVWLY
gigant (GMR) efect observat n structuri feromagnetice multistrat de tip special.
(IHFWXO*05SRDWHSURYRFDRYDULD LHGHDUH]LVWHQ HLVXEDF LXQHDFkPSXOXL
magnetic.
5H]LVWHQ DPDJQHWRUH]LVWRDUHORUFODVLFHFkWLDFHORU*05GHSLQGHSWUDWLF
GHFkPSXODSOLFDWvQFRQVHFLQ QXSRWGHWHFWDSRODULWDWHDFkPSXOXLPDJQHWLF3H
OkQJ GH]DYDQWDMXO QHOLQLDULW LL PDJQHWRUH]LVWRDUHOH DX XQ FRHILFLHQW GH
WHPSHUDWXUDSUHFLDELO
'LQ DFHVW PRWLY PDJQHWRUH]LVWRDUHOH QX VH SURGXF VXE IRUP GH
componente discrete comercializate individual ci sunt nglobate mai multe
UH]LVWRDUHvQVWUXFWXULGHWLSVHQ]RU$VWIHOVHPLQLPL]HD]YDULD LDFXWHPSHUDWXUD
DPULPLLGHLHLUHLVHvPEXQW HWHOLQLDULWDWHDVHPQDOXOXL
2vPEXQW LUHDOLQLDULW LLVHDVLJXULSULQDSOLFDUHDXQXLFkPSPDJQHWLF
de polarizare, cmp generat de obicei de un magnet permanent.
(IHFWXOPDJQHWRUH]LVWLYvQPHWDOHIHURPDJQHWLFHDIRVWREVHUYDWSULPDGDW
GH:LOLDP7KRPVRQ/RUG.HOYLQvQDQXO$SOLFD LLOHDXDSUXWvQVDQL
mai trziu atunci cnd tehnologiile microelectronice au permis utilizarea n
SUDFWLFDVWUXFWXULORUPDJQHWRUH]LVWLYH
&RQVLGHUP XQ UH]LVWRU SHOLFXODU GLQ SHUPDOOR\ DOLDM 1L)H (IHFWXO
PDJQHWRUH]LVWLYGHDQL]RWURSLH$05FRQVWvQH[LVWHQ DXQHLGLIHUHQ HRmax ntre
YDORULOH UH]LVWHQ HL PVXUDWH SHQWUX R GLUHF LH D PDJQHWL]D LHL vQ VWUDW SDUDOHO
UHVSHFWLYSHUSHQGLFXODUSHGLUHF LDGHFXUJHUHDFXUHQWXOXL Rmax = R|| R .
&
La aplicarea
unui
cmp
magnetic
extern
H
, n planul rezistorului vectorul
&
PDJQHWL]D LH M VHYDRULHQWDGXSGLUHF
LDFkPSXOXLDSOLFDWIRUPkQGXQJKLXO
&
FXGLUHF LDGHFXUJHUHDFXUHQWXOXL J .

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

cmp aplicat

Fig. 2.186(IHFWXOPDJQHWRUH]LVWLYGHDQL]RWURSLH$05VWUXFWXUWLS05

6H SRDWH DUWD F UH]LVWHQ D PDJQHWRUH]LVWRUXOXL HVWH R IXQF LH GH FRV2,
unghiul  ILLQG GHSHQGHQW GH PULPHD FkPSXOXL DSOLFDW $VWIHO OD DFHVW WLS GH
magnetorezistor, cunoscut sub numele generic de MR, rotirea vectorului
PDJQHWL]D LHVSUHYHFWRUXOGHQVLWDWHGHFXUHQWGXFHODFUHWHUHDUH]LVWHQ HLURWLUHD
vQ VHQV FRQWUDU GXFkQG OD VFGHUHD UH]LVWHQ HL 3H DFHDVW REVHUYD LH VH ED]HD]
XWLOL]DUHDPDJQHWRUH]LVWRDUHORUODPVXUDUHDYDORULLFkPSXOXLPDJQHWLF'HRELFHL
VHXWLOL]HD]XQDUDQMDPHQWVSD LDODOUH]LVWRDUHORUGHWLSSXQWHFDvQILJXUD 2.187.
+VA
A
H

Cmp
aplicat
R+R

R-R

J
J

D
J
M

R-R

R+R

Vo
Vo=(R/R)*VA

J
C
Fig. 2.187$UDQMDUHDPDJQHWRUH]LVWRDUHORUvQVWUXFWXUWLSSXQWH

&HOH SDWUX PDJQHWRUH]LVWRDUH DX DFHHDL UH]LVWHQ  5 GDU PDJQHWL]D LD ORU
HVWH DOHDV DVWIHO vQFkW SHQWUX GRX UH]LVWRDUH DIODWH vQ EUD H RSXVH DOH SXQ LL V
SURGXFPULUHDUHVSHFWLYPLFRUDUHDUH]LVWHQ HL7HQVLXQHDGHLHLUHDSXQ LLHVWH
SURSRU LRQDOFXYDULD LDUHODWLYDUH]LVWHQ HLR/R, care n domeniul de liniaritate
acceptat este R/R=SH, cu S sensibilitatea senzorului magnetorezistiv. Pentru
mV/V
magnetorezistoarele firmei Honeywell, [40], S=3
, iar domeniul de
Oe
liniaritate este de circa 2Oe (1Oe = 103 / 4 A / m) .
'DF FkPSXO PDJQHWLF
DSOLFDW PDJQHWRUH]LVWRUXOXL GHS HWH YDORDUHD
GH
&
&
VDWXUD LH DWXQFL YHFWRUXO M DUH SUDFWLF DFHHDL GLUHF LH FX FkPSXO DSOLFDW H . n
9

Cap.2 Rezistoare

acest fel, GHYLQHXQJKLXOGLQWUHGLUHF LDGHFXUJHUHDFXUHQWXOXLLFkPSXODSOLFDW

$VWIHO PDJQHWRUH]LVWRUXO SRDWH IL XWLOL]DW FD VHQ]RU DO GLUHF LHL FkPSXOXL DSOLFDW
UH]LVWHQ D VD GHSLQ]kQG GH FRV2 'H RELFHL PDJQHWRUH]LVWRDUHOH FH OXFUHD] vQ
UHJLPGHVDWXUD LHVHXWLOL]HD]WRWvQFRQILJXUD LLWLSSXQWHFDvQILJXUD2.187.
Magnetorezistoarele bazate pe efectul GMR, pe scurt magnetorezistoare
*05SHOkQJDYDQWDMXOXQHLYDULD LLPDLPDULDUH]LVWHQ HLFXFkPSXOPDJQHWLF
(de 3-5 ori mai mare ca la MR), pot lucra la valori ale cmpului magnetice mai
PDULGHFkWPDJQHWRUH]LVWRDUHOHFODVLFH050DJQHWRUH]LVWRDUHOH*05RSHUHD]
GH UHJXO vQ UHJLXQHD GH VDWXUD LH L VXQW XWLOL]DWH GHFL OD PVXUDUHD GLUHF LHL
FkPSXOXLLQXDLQWHQVLW LLVDOH9DULD LDUH]LVWHQ HLSRDWHILH[SULPDWSULQUHOD LD
R Rmax
=
(1 cos ), cu Ro  YDORDUHD PLQLP D UH]LVWHQ HL Rmax valoarea
2 R0
R0
PD[LPDFUHWHULLGHUH]LVWHQ
R=R-R
&
& oYDULD LD UH]LVWHQ HL - unghiul
dintre cmpul aplicat H LPDJQHWL]D LDLQWHUQ M o .
0RGXOGHYDULD LHDUH]LVWHQ HLSRDWHILXUPULWvQILJXUD

Fig. 2.1889DULD LDWLSLFDUH]LVWHQ HLODPDJQHWRUH]LVWRDUHWLS*05

$D FXP VH REVHUY GLQ JUDILF PDJQHWRUH]LVWRDUHOH SUH]LQW XQ PLF
histerezis.
3DUDPHWULL PDJQHWRUH]LVWRDUHORU VXQW GH UHJXO H[SULPD L FD SDUDPHWULL DL
structurii complexe de senzor n care sunt nglobate.
Principalii parametrii ai unui magnetorezistor GMR de tip GMR S6 produs
GH,QILQHRQ7HFKQRORJLHV6LHPHQVSRWILXUPUL LvQWDEHOXO
0DJQHWRUH]LVWRDUHOH 05 L *05 VXQW UHDOL]DWH SULQ SURFHGHH FRPSOH[H
VSHFLILFH WHKQRORJLHL VWUDWXULORU VXE LUL 6WUXFWXULOH FDUH SRW PHUJH GH OD
PDJQHWRUH]LVWRDUHLQGLYLGXDOHODVWUXFWXULSXQWHFKLDUODGRXVDXWUHLFRQILJXUD LL
SXQWH FRUHVSXQ]WRDUH FHORU WUHL D[H VXQW vQFDSVXODWH vQ FDSVXOH VSHFLILFH
10

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

circuitelor integrate SMD (SOIC, SOM) sau "through hole" (SIP, DIP). Capsula
SRDWHLQFOXGHLDQXPLWHSU LDOHFLUFXLWXOXLHOHFWURQLFGHSUHOXFUDUHDVHPQDOXOXL
Tabelul 2.25 Parametrii magnetorezistoarelor GMR S6, [39].
Parametru
Curentul nominal de alimentare IN
5H]LVWHQ DOD=0, Ro
Efectul magnetorezistiv n gama H=5...15KA/m
&RHILFLHQWXO GH WHPSHUDWXU DO UH]LVWHQ HL 5o
TCR0
&RHILFLHQWXO GH WHPSHUDWXU DO HIHFWXOXL
magnetorezistiv TCR/R0
Histerezis la H=10KA/m
Cmp magnetic maxim
7HPSHUDWXUDDPELDQWGHOXFUX7a

Valoare
4mA
>700
4%
+0.09...+0.12%/K
-0.27...-0.23%/K
<2 grade
15KA/m
-40...+150C

n figura 2.189VXQW SUH]HQWDWHGRXWLSXUL GH PDJQHWRUH]LVWRDUH DOH ILUPHL

Honeywell.

Fig. 2.189 Capsule de magnetorezistoare MR ale firmei Honeywell, [40].

&LUFXLWXO +0&  FRQ LQH R SXQWH GH PDJQHWRUH]LVWRDUH LDU +0& 
FRQ LQH GRX SXQ L GH PDJQHWRUH]LVWRDUH LGHQWLFH GDU FX GLUHF LLOH PDJQHWL]D LHL
interne rotite la 45.
3ULQWUH DSOLFD LLOH FDUH XWLOL]HD] PDJQHWRUH]LVWRDUH DPLQWLP VHQ]RUL GH
curent, senzori de cmp magnetic, capete magnetice. Senzorii de cmp magnetic
SRWILXWLOL]D LLFDGLVSR]LWLYHGHQDYLJD LHDYkQGRVHQVLELOLWDWHFDUHSRDWHGHWHFWD
FkPSXOPDJQHWLFWHUHVWUX&DSHWHOHGHFLWLUHPDJQHWRUH]LVWLYHDXID  GH FDSHWHOH
GH FLWLUH FODVLFH LQGXFWLYH DYDQWDMXO F RIHU FD VHPQDO GH LHLUH GLUHFW FkPSXO
PDJQHWLF L QX GHULYDWD VD $FHVW OXFUX SRDWH XXUD FHULQ HOH SULYLQG DVLJXUDUHD
XQHL DQXPLWH YLWH]H UHODWLYH FDS GH FLWLUH  PHGLX PDJQHWLF 'HVLJXU H[LVW
GH]DYDQWDMXOXWLOL]ULLFDSHWHORUPDJQHWRUH]LVWLYHQXPDLODFLWLUHDLQIRUPD LHL$X
IRVW UHDOL]DWH XQLW L GH GLVF ULJLGH KDUGGLVN FX FDSHWH FRPELQDWH
magnetorezistive - inductive.
n figura 2.190 D VH SUH]LQW XQ H[HPSOX GH XWLOL]DUH D
magnetorezistoarelor la realizarea unui senzor de proximitate iar n figura 2.190
EXQH[HPSOXGHXWLOL]DUHODUHDOL]DUHDXQXLVHQ]RUGHGHSODVDUHOLQLDU
11

Cap.2 Rezistoare

(a)

(b)

Fig. 2.190 Utilizarea circuitelor cu magnetorezistoare n punte (a) senzor de proximitate, (b)
VHQ]RUGHGHSODVDUHOLQLDU

n figura 2.191 este prezentat circuitul electronic complet al senzorului de

SUR[LPLWDWHFLUFXLWFDUHFRPDQGDSULQGHUHDGLRGHLHPL WRDUHGHOXPLQ/('

Fig. 2.191 Circuitul electronic al senzorului de proximitate realizat cu magnetorezistoare

tip MR ale firmei Honeywell, [40].

2.2.5 Rezistoare dependente de tensiunile mecanice - Tensorezistoare

5H]LVWRDUHOHDFURUUH]LVWHQ GHSLQGHGHWHQVLXQLOHPHFDQLFHVXQWXWLOL]DWH
vQJHQHUDOODPVXUDUHDUHVSHFWLYHORUWHQVLXQLHIRUWXULILLQGQXPLWHGXS IXQF LD
SHFDUHRUHDOL]HD]WUDGXFWRDUHWHQVRPHWULFHUH]LVWLYHVDXSHVFXUWWHQVRPHWUH'H
IDSW WHQVRPHWUHOH PVRDU GHIRUPD LLOH PHFDQLFH vQ JHQHUDO SURSRU LRQDOH FX
eforturile mecanice.
12

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs

&RQVLGHUP XQ UH]LVWRU GUHSWXQJKLXODU GH OXQJLPH O L VHF LXQH $ FD vQ
figura 2.192.
A

l
Efort longitudinal N
Fig. 2.1925H]LVWRUGUHSWXQJKLXODUVXSXVGHIRUPULORUORQJLWXGLQDOH

5H]LVWHQ DDFHVWXLUH]LVWRU5HVWH
l
(2.223)
A
3ULQGLIHUHQ LHUHDUHOD LHLDQWHULRDUHVHRE LQH
l

l
dR = dl
dA + d
(2.224)
A
A
A2
dR dl dA d
sau
=
+
(2.225)

R
l
A
3ULPLL GRL WHUPHQL GLQ  H[SULP YDULD LD UH]LVWHQ HL GDWRULW
PRGLILFULLGLPHQVLXQLORUIL]LFHILLQGGHFLXQHIHFWJHRPHWULFLDUFHOGHDOWUHLOHD
WHUPHQ H[SULP PRGLILFDUHD UH]LVWLYLW LL PDWHULDOXOXL VXE HIHFWXO GHIRUPULL
mecanice, efectul fiind cunoscut sub numele de efect piezorezistiv.
5HOD LDVHSXQHVXEIRUPDWUHFkQGODYDULD LLILQLWH
dR
d
= 2 +
(2.226)

R
cu =OO DOXQJLUHD UHODWLY LDU  FRHILFLHQWXO GH FRQWUDF LH WUDQVYHUVDO VDX
coeficientul lui Poisson, 0,3 pentru materiale izotrope.
6HGHILQHWHFRHILFLHQWXOSLH]RUH]LVWLYORQJLWXGLQDO1 ca:
R=

d
d

=
1 =
N
E
A

(2.227)

cu NIRU DORQJLWXGLQDODSOLFDWUH]LVWRUXOXLE modulul lui Young.

6HQVLELOLWDWHDWHQVRPHWUXOXL6GHGHILQHWHFD
13

Cap.2 Rezistoare

S=

(R / R ) = R
(l / l) R

(2.228)

8WLOL]kQGLIDFWRUXO6GHYLQH

S = 1 + 2 + 1 E

(2.229)

QSUH]HQWVHXWLOL]HD]GRXWLSXULSULQFLSDOHGHWUDGXFWRDUHWHQVRPHWULFH
WUDGXFWRDUH PHWDOLFH  UHDOL]DWH GLQ DOLDMH PHWDOLFH FX UH]LVWLYLWDWH PDUH L
FRHILFLHQWGHWHPSHUDWXUUHGXVVXEIRUPGHILUHIROLLVDXVWUDWXULVXE LUL
WUDGXFWRDUH SH ED] GH PDWHULDOH VHPLFRQGXFWRDUH UHDOL]DWH GLQ
VHPLFRQGXFWRDUH PRQR VDX SROLFULVWDOLQH VXE IRUP GH ILODPHQWH FKLSXUL VDX
VWUDWXULVXE LUL
n cazul traductoarelor rezistive metalice efectul piezorezistiv este foarte
mic 1LSUHGRPLQHIHFWXOJHRPHWULF
S=1+2
(2.230)
&RQVLGHUP F    6  'H IDSW 6 LD YDORUL vQWUH  L  IDSW
H[SOLFDELOSULQGLIHUHQ HOHvQYDORDUHDFRHILFLHQWXOXL3RLVVRQLSULQIDSWXOFSRDWH
VDSDULRXRDUYDULD LHGHUH]LVWLYLWDWHGDWRUDWGHIRUPULORU1).
2ULFXP6!LDUXQFRHILFLHQW6!vQVHDPQRFUHWHUHGHUH]LVWHQ vQFD]XO
DOXQJLULLLRVFGHUHDUH]LVWHQ HLvQFD]XOFRPSULPULL
n cazul traductoarelor tensometrice realizate din materiale semiconductoare
efectul piezorezistiv este predominant.
S 1E

(2.231)

S= 30 SHQWUX WUDGXFWRDUH GLQ PDWHULDOH SROLFULVWDOLQH L 6  200 pentru

materiale monocristaline.
(VWHGHUHPDUFDWFVHQVLELOLWDWHD6GHIDSW1SRDWHDYHDLYDORULQHJDWLYH
vQIXQF LHGHWLSXOGRSULLLGHRULHQWDUHDD[HORUFULVWDOLQH
Varianta de traductor tensometric rezistiv metalic care s-a impus este cea
UHDOL]DWGLQIROLLPHWDOLFHGHRELFHLGLQFRQVWDQWDQ
3HQWUX PULUHD VHQVLELOLW LL VH XWLOL]HD] R VWUXFWXU FX PHDQGUH )ROLD
PHWDOLF GH 5P RE LQXW SULQ ODPLQDUH HVWH IL[DW FX XQ DGH]LY SH XQ VXSRUW
L]RODWRU SROLPHULF 6WUXFWXUD WLSLF D DFHVWXL WUDGXFWRU SRDWH IL XUPULW vQ ILJXUD
2.193.

14

&RPSRQHQWHLFLUFXLWHSDVLYH

Note de curs
Folie
izolant

Terminale

Folie
metalic
(
t t

Fig. 2.193 Structura traductorului tensometric rezistiv metalic.

$FHDVWFRQVWUXF LHFXQRVFXWVXEQXPHOHGHPDUFWHQVRPHWULFHVWHDSRL
OLSLWDSOLFDWSHFRUSXODFUXLGHIRUPD LHVHGRUHWHDILPVXUDW
$OWHYDULDQWHFRQVWUXFWLYHSRWILXUPULWHvQILJXUD

(a)

(b)

(c)

(d)

Fig. 2.1940UFLWHQVRPHWULFHDSHQWUXGLUHF LLOHESHQWUXGLUHF LLOH,

FSHQWUXGLUHF LLOHWLSUR]HWGSHQWUXPVXUDUHDSUHVLXQLL

7UDGXFWRDUHOHUH]LVWLYHWHQVRPHWULFHVHPLFRQGXFWRDUHVHUHDOL]HD]GHRELFHL
GLQJHUPDQLXVDXVLOLFLX(OHSUH]LQWRVHQVLELOLWDWHVXSHULRDUFHORUPHWDOLFHGDU
DX FRHILFLHQ L GH YDULD LH FX WHPSHUDWXUD PDL PDUL L XQ GRPHQLX GH PVXU DO
GHIRUPD LLORUFHYDPDLPLF

Fig. 2.195 Structura traductorului tensometric rezistiv semiconductor.

15

Cap.2 Rezistoare

De obicei traductoaUHOH WHQVRPHWULFH VH FRQHFWHD] vQ PRQWDMH WLS SXQWH

SHQWUXPULUHDVHQVLELOLW LLLFRPSHQVDUHDYDULD LLORUFXWHPSHUDWXUDQIXQF LHGH
SUHFL]LDGRULWVHXWLOL]HD]SXQ LFXXQXOGRXVDXSDWUXWUDGXFWRDUH&RQHFWDUHD
HOHFWULFDWHQVRUH]LVWRDUHORUODSXQWHDFXSDWUXWUDGXFWRDUHHVWHLGHQWLFFXFHDGLQ
ILJXUDSUH]HQWDWODFDSLWROXO0DJQHWRUH]LVWRDUH
QWDEHOXOVXQWSUH]HQWD LSULQFLSDOLLSDUDPHWULLDLXQRUWHQVRUH]LVWRDUH
SURGXVHGH%/+(OHFWURQLFV,QFL+RWWLQJHU%DOGZLQ0HDVXUHPHQWV,QF
Tabelul 2.26 Parametrii unor tensorezistoare

Tip tensorezistor
5H]LVWHQ D
QRPLQDO5N ()
7ROHUDQ D5N
(%)
Sensibilitate S
7ROHUDQ 6
(%)
(ORQJD LD
PD[LPm/m)
Domeniul
temperaturilor de
utilizare

Seria X
3URGXFWRU
HBM
metalic / folie
constantan
120, 350, 700,
1000
0,3

Seria Y
3URGXFWRU
HBM
metalic/ folie
constantan
350

Seria traductoare
metalice
3URGXFWRU%/+
metalic/ folie
constantan
350-5000

0,3

(0,2 - 0,6)

Seria traductoare
semiconductoare
3URGXFWRU%/+
filament
semiconductor
120, 350, 1000,
2000, 3000
1, 2

2
0,7

2
1,5

2,05- 2,1
0,5

110 +150
2

50000

20000

>2250

5000

70 +200C

70 +200C

75 +200C

269 +372C

3HQWUX UHDOL]DUHD FRPSHQVULL FX WHPSHUDWXUD SURGXFWRULL UHDOL]HD] FX

DFHOHDLPDWHULDOHLFXVWUXFWXULVLPLODUHUH]LVWRDUHOLQLDUHIL[HFDUHQXVXQWVXSXVH
GHIRUPD LLORUGDUSUH]LQWR YDULD LH FX WHPSHUDWXUDVLPLODU FX WHQVRUH]LVWRDUHOH
3ULQWURJUXSDUHDGHFYDWvQVWUXFWXULGHWLSSXQWHHVWHSRVLELODVWIHOFRPSHQVDUHD
YDULD LLORUUH]LVWHQ HLFXWHPSHUDWXUD

16