This document provides data on ST24C04, ST25C04, ST24W04, and ST25W04 serial 4K EEPROM chips. The chips offer 1 million erase/write cycles with 40-year data retention, operate from 1.8V to 5.5V, and have a two-wire serial interface compatible with I2C. They are available in plastic DIP and SOIC packages.
This document provides data on ST24C04, ST25C04, ST24W04, and ST25W04 serial 4K EEPROM chips. The chips offer 1 million erase/write cycles with 40-year data retention, operate from 1.8V to 5.5V, and have a two-wire serial interface compatible with I2C. They are available in plastic DIP and SOIC packages.
This document provides data on ST24C04, ST25C04, ST24W04, and ST25W04 serial 4K EEPROM chips. The chips offer 1 million erase/write cycles with 40-year data retention, operate from 1.8V to 5.5V, and have a two-wire serial interface compatible with I2C. They are available in plastic DIP and SOIC packages.
This document provides data on ST24C04, ST25C04, ST24W04, and ST25W04 serial 4K EEPROM chips. The chips offer 1 million erase/write cycles with 40-year data retention, operate from 1.8V to 5.5V, and have a two-wire serial interface compatible with I2C. They are available in plastic DIP and SOIC packages.
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ST24C04, ST25C04 ST24W04, ST25W04
SERIAL 4K (512 x 8) EEPROM
DATA BRIEFING
1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: 3V to 5.5V for ST24x04 versions 2.5V to 5.5V for ST25x04 versions 1.8V to 5.5V for ST24C04R version only HARDWARE WRITE CONTROL VERSIONS: ST24W04 and ST25W04 PROGRAMMABLE WRITE PROTECTION TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (up to 4 BYTES) PAGE WRITE (up to 8 BYTES) BYTE, RANDOM and SEQUENTIAL READ MODES SELF TIMED PROGRAMMING CYCLE AUTOMATIC ADDRESS INCREMENTING ENHANCED ESD/LATCH UP PERFORMANCES
8 1 PSDIP8 (B) 0.25mm Frame
8 1 SO8 (M) 150mil Width
Logic Diagram
DESCRIPTION This specification covers a range of 4K bits I2C bus EEPROM products, t he ST24/25C04, the ST24C04R and the ST24/25W04. In the text, products are referred to as ST24/25x04, where "x" is: "C" for Standard version and "W" for hardware Write Control version. The ST24/25x04 are 4K bit electrically erasable programmable memories (EEPROM), organized as 2 blocks of 256 x 8 bits. They are manufactured in SGS-THOMSONs Hi-Endurance Advanced CMOS technology which guarantees an endurance of one million erase/write cycles with a data retention of 40 years. The memories operate with a power supply value as low as 1.8V for the ST24C04R only. Both Plastic Dual-in-Line and Plastic Small Outline packages are available.
VCC
2 E1-E2 PRE SCL MODE/WC* ST24x04 ST25x04 St24C04R SDA
VSS AI00851D
Note: WC signal is only available for ST24/25W04 products.
B24C04/607 Complete data available on DATA-on-DISC CD-ROM or at www.st.com
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ST24/25C04, ST24C04R, ST24/25W04
DIP Pin Connections
Signal Names PRE E1-E2 Write Protect Enable Chip Enable Inputs Serial Data Address Input/Output Serial Clock Multibyte/Page Write Mode (C version) Write Control (W version) Supply Voltage Ground
Ordering Information Scheme For a list of available options refer to the current Memory Shortform catalogue. For further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you. Example: ST24C04 M 1 TR
