BF244A / BF244B / BF244C

BF244A BF244B BF244C

TO-92
D

N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.

Absolute Maximum Ratings*

Symbol
VDG VGS ID IGF Tstg Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range

TA = 25C unless otherwise noted

Parameter

Value
30 - 30 50 10 -55 to +150

Units
V V mA mA C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
BF244A / BF244B / BF244C 350 2.8 125 357

Units
mW mW/C C/W C/W

1997 Fairchild Semiconductor Corporation

BF244A / BF244B / BF244C

N-Channel RF Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

OFF CHARACTERISTICS
V(BR)GSS IGSS VGSS(off) VGS Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage IG = 1.0 A, VDS = 0 VGS = - 20 V, VDS = 0 VDS = 15 V, ID = 10 nA VDS = 15 V, ID = 200 A 244A 244B 244C 30 5.0 - 0.5 - 0.4 - 1.6 - 3.2 - 8.0 - 2.2 - 3.8 - 7.5 V nA V V V V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 244A 244B 244C 2.0 6.0 12 6.5 15 25 mA mA mA

SMALL SIGNAL CHARACTERISTICS

yfs yos yrs Ciss Crss Coss NF F(Yfs) Forward Transfer Admittance Output Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure Cut-Off Frequency VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 20 V, VGS = - 1.0 V VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 k, f = 100 MHz VDS = 15 V, VGS = 0 3.0 5.6 40 1.0 3.0 0.7 0.9 1.5 700 6.5
mmhos mmhos

mhos mhos pF pF pF dB MHz

5
Typical Characteristics
Transfer Characteristics
20 ID - DRAIN CURRENT (mA) r DS - DRAIN ON RESISTANCE ( )

Channel Resistance vs Temperature

1000 500 300 200 100

V GS(OFF) = -4.5V TA = -55 C T A = +25 C

O O

V DS

= 15V

16

V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V

12

T A = +125O C

TA = -55 C T A = +25 C T A = +125O C

O

50 30 20 10

V DS

= 100mV

-2.5 V
0 0 -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5

V GS = 0 V
-50 0 50 100 150 T A - AMBIENT TEMPERATURE ( C)

BF244A / BF244B / BF244C

N-Channel RF Amplifier
(continued)

Typical Characteristics

(continued)

gfs -- TRANSCONDUCTANCE (mmhos)

Transconductance Characteristics
7 6 5 4 3 2 1 0 0

Common Drain-Source Characteristics

I D -- DRAIN CURRENT (mA)
DS

TA = -55 C T A = +25 C T A = +125O C

O

= 15V

5 4 TYP V 3

T A = +25 C
GS(OFF)

= -5.0V
= 0V

TA = -55 C T A = +25 C T A = +125 C V GS(OFF) = -4.5V

O O

5V -0. -1.0V V -1.5 -2.0V

V
2 1

-2.5V
-3.0V -3.5V -4.0V

-2.5 V
-1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5

0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V)

gos -- OUTPUT CONDUCTANCE (u mhos)

T A = +25 C f = 1.0 kHz 20 10 5 V

DG

G S(OFF)

= -5.5V

5.0V 10V 15V 20V

gfs, IDSS @ V DS = 15 V, V GS = 0 PULSE r DS @ VDS= 100mV, V GS = 0

100 50 30 20 10 5

= 5v 10 20 15 5 10 15 20 V
G S(OFF)

1 0.5 V 0.1 0.01 0.02

G S(OFF)

= -3.5V

= -1.5V 5 10

20 10 -1

VGS(OFF)

@ V GS = 15V, I D= 1nA

3 2 1 - 10

0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA)

-2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V)
GS

Transconductance vs Drain Current

gfs -- TRANSCONDUCTANCE (mmhos) 10 e n- NOISE VOLTAGE ( nV/

Noise Voltage vs Frequency

V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz
Hz )

V GS(OFF) = - 1.5V O TA = -55 C 5 T A = +25 C T A = +125 O C

1
O

TA = -55 C V GS(OFF) T A = +25 C T A = +125 O C = - 5V V DG = 15V f = 1.0 kHz

O

0.5

10 5

I D = 0.5 mA I D = 3 mA

0.1 0.01 0.02

0.05 0.1 0.2 0.5 1 2 I D - DRAIN CURRENT (mA)

10

1 0.01 0.03

0.1

0.3 1 3 10 f -- FREQUENCY (kHz)

30

100

gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS

Output Conductance vs Drain Current

r DS -- DRAIN "ON" RESISTANCE ( )

Transconductance Parameter Interactions

BF244A / BF244B / BF244C

N-Channel RF Amplifier
(continued)

Typical Characteristics

(continued)

Capacitance vs Voltage
10 ) -- CAPACITANCE (pF) f = 0.1 - 1.0 MHz

Noise Figure Frequency

5 V DS NF -- NOISE FIGURE (dB) 4 I
D

= 15V = 5.0 mA

5 C is ( V DS = 15 V) 1 C rs ( V DS = 0 V)

R g = 1.0 k O T A = +25 C

C is ( C

rs

-5 -10 -15 VG S-- GATE-SOURCE VOLTAGE(V)

-20

0 10

20

30

50 100 200 300 f -- FREQUENCY (MHz)

500

1000

Common Gate Characteristics

Output Admittance
Y ogs-- OUTPUT CONDUCTANCE (mmhos)

Input Admittance
Y igs -- INPUT ADMITTANCE (mmhos) V DS = 15V V GS = 0 (CG)

b Og S (x 10) g
Ogs

10 5

g igs

V DS = 15V V GS = 0 (CG)
100 200 300 500 f -- FREQUENCY (MHz) 700 1000

b igs

5
700 1000

1 100

200 300 500 f -- FREQUENCY (MHz)

Forward Transadmittance
Yfgs -- FORWARD TRANSFER (mmhos)

Reverse Transadmittance
Y rgs-- REVERSE TRANSFER (mmhos) 1

10 5

+g fgs

V DS = 15V V GS = 0 (CG) g
rgs

-b fgs
1

- b rgs

V DS = 15V V GS = 0 (CG)
100 200 300 500 f -- FREQUENCY (MHz ) 700 1000

100

200 300 500 f -- FREQUENCY (MHz)

700

1000

BF244A / BF244B / BF244C

N-Channel RF Amplifier
(continued)

Common Source Characteristics

Output Admittance
-- OUTPUT CONDUCTANCE (mmhos)

Input Admittance
Yis s -- INPUT ADMITTANCE (mmhos) 10 5

V DS = 15V V GS = 0 (CS)

b OSS (x 10) g
OSS

b iss g iss

V DS = 15V V GS = 0 (CS)
100 200 300 500 f -- FREQUENCY (MHz) 700 1000

OSS

100

200 300 500 f -- FREQUENCY (MHz)

700

1000

Forward Transadmittance
Yfss -- FORWARD TRANSFER (mmhos) 5
Y rss-- REVERSE TRANSFER (mmhos)

Reverse Transadmittance
10 5

10

+g

fss

-b
1

fss

- b rss
1

-g V DS = 15V V GS = 0 (CS)
100

rss

( X 0.1)

V DS = 15V V GS = 0 (CS)
100 200 300 500 f -- FREQUENCY (MHz) 700 1000

200 300 500 f -- FREQUENCY (MHz)

700

1000

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First Production

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Rev. G